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    • 6. 发明申请
    • REPLACEABLE UPPER CHAMBER SECTION OF PLASMA PROCESSING APPARATUS
    • 等离子体加工装置的可更换的上部室
    • US20100243164A1
    • 2010-09-30
    • US12748141
    • 2010-03-26
    • Leonard J. SharplessHarmeet SinghMichael S. Kang
    • Leonard J. SharplessHarmeet SinghMichael S. Kang
    • H01L21/306C23F1/08C23C16/00
    • H01L21/67069H01J37/321H01J37/32458H01J37/32467H01L21/67126H01L21/6719
    • A replaceable upper chamber section of a plasma reaction chamber in which semiconductor substrates can be processed comprises a monolithic metal cylinder having a conical inner surface which is widest at an upper end thereof, an upper flange extending horizontally outward away from the conical inner surface and a lower flange extending horizontally away from the conical inner surface. The cylinder includes an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber and a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber. A thermal mass at an upper portion of the cylinder is defined by a portion of the cylinder between the conical inner surface and an outer surface extending vertically from the upper flange, the thermal mass being effective to provide azimuthal temperature uniformity of the conical inner surface. A thermal choke is located at a lower portion of the cylinder and is effective to minimize transfer of heat across the lower vacuum sealing surface. The thermal choke is defined by a thin metal section having a thickness of less than 0.25 inch and extending at least 25% of the length of the conical inner surface.
    • 可处理半导体衬底的等离子体反应室的可更换的上腔室部分包括具有在其上端最宽的圆锥形内表面的整体式金属圆筒,从锥形内表面向外水平向外延伸的上凸缘和 下凸缘从锥形内表面水平地延伸。 气缸包括适于密封等离子体室的电介质窗口的上环形真空密封表面和适于密封等离子体室底部的下环形真空密封表面。 气缸上部的热质量由圆筒内部表面和从上凸缘垂直延伸的外表面之间的一部分限定,该热质量有效地提供圆锥形内表面的方位角温度均匀性。 热扼流器位于气缸的下部,并且有效地最小化穿过下真空密封表面的热传递。 热扼流圈由厚度小于0.25英寸且延伸至锥形内表面长度的至少25%的薄金属部分限定。
    • 7. 发明授权
    • Edge ring assembly for plasma etching chambers
    • 用于等离子体蚀刻室的边缘环组件
    • US08845856B2
    • 2014-09-30
    • US12957932
    • 2010-12-01
    • Michael S. KangMichael C. KelloggMigùel A. SaldanaTravis R. Taylor
    • Michael S. KangMichael C. KelloggMigùel A. SaldanaTravis R. Taylor
    • H01L21/3065H01J37/32
    • H01J37/32642H01J37/32091
    • An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.
    • 用于等离子体蚀刻室的边缘环组件包括电介质耦合环和导电边缘环。 在一个实施例中,电介质耦合环具有从其内周向轴向上延伸的环形突起。 电介质耦合环适于围绕等离子体蚀刻室中的衬底支撑件。 导电边缘环适于围绕电介质耦合环的环形突起。 支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在电介质耦合环的环形突起和导电边缘环的一部分上。 在另一个实施例中,电介质耦合环具有矩形横截面。 电介质耦合环和导电边缘环适于围绕等离子体蚀刻室中的衬底支撑。 支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在导电边缘环的一部分上。
    • 8. 发明申请
    • EDGE RING ASSEMBLY FOR PLASMA ETCHING CHAMBERS
    • 等离子体消声器的边缘环组件
    • US20110126984A1
    • 2011-06-02
    • US12957932
    • 2010-12-01
    • Michael S. KangMichael C. KelloggMlgúel A. SaldanaTravis R. Taylor
    • Michael S. KangMichael C. KelloggMlgúel A. SaldanaTravis R. Taylor
    • H01L21/3065
    • H01J37/32642H01J37/32091
    • An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.
    • 用于等离子体蚀刻室的边缘环组件包括电介质耦合环和导电边缘环。 在一个实施例中,电介质耦合环具有从其内周向轴向上延伸的环形突起。 电介质耦合环适于围绕等离子体蚀刻室中的衬底支撑件。 导电边缘环适于围绕电介质耦合环的环形突起。 支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在介质耦合环的环形突起和导电边缘环的一部分上。 在另一个实施例中,电介质耦合环具有矩形横截面。 电介质耦合环和导电边缘环适于围绕等离子体蚀刻室中的衬底支撑。 支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在导电边缘环的一部分上。