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1. 发明申请

US20120025303A1 SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20120025303A1
公开(公告)日：2012-02-02
申请号：US13270253
申请日：2011-10-11
申请人： Franz Hirler , Walter Rieger , Andrew Wood , Mathias Born , Ralf Siemieniec , Jan Ropohl , Martin Poelzl , Oliver Blank , Uli Hiller , Oliver Haeberlen , Rudolf Zelsacher , Maximilian Roesch , Joachim Krumrey
发明人： Franz Hirler , Walter Rieger , Andrew Wood , Mathias Born , Ralf Siemieniec , Jan Ropohl , Martin Poelzl , Oliver Blank , Uli Hiller , Oliver Haeberlen , Rudolf Zelsacher , Maximilian Roesch , Joachim Krumrey
IPC分类号： H01L29/78 , H01L21/31
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/42376 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
摘要翻译：在一个实施例中，场效应晶体管具有半导体本体，第一导电类型的漂移区和栅电极。至少一个沟槽延伸到漂移区域中。至少在所述至少一个沟槽的一部分中布置场板。绝缘材料至少部分地围绕栅电极和场板两者。场板包括第一半导体材料。

2. 发明授权

US08044459B2 Semiconductor device with trench field plate including first and second semiconductor materials 有权
标题翻译：具有沟槽场板的半导体器件包括第一和第二半导体材料
公开(公告)号：US08044459B2
公开(公告)日：2011-10-25
申请号：US12268182
申请日：2008-11-10
申请人： Franz Hirler , Walter Rieger , Andrew Wood , Mathias Born , Ralf Siemieniec , Jan Ropohl , Martin Poelzl , Oliver Blank , Uli Hiller , Oliver Haeberlen , Rudolf Zelsacher , Maximilian Roesch , Joachim Krumrey
发明人： Franz Hirler , Walter Rieger , Andrew Wood , Mathias Born , Ralf Siemieniec , Jan Ropohl , Martin Poelzl , Oliver Blank , Uli Hiller , Oliver Haeberlen , Rudolf Zelsacher , Maximilian Roesch , Joachim Krumrey
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/42376 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
摘要翻译：在一个实施例中，场效应晶体管具有半导体本体，第一导电类型的漂移区和栅电极。至少一个沟槽延伸到漂移区域中。至少在所述至少一个沟槽的一部分中布置场板。绝缘材料至少部分地围绕栅电极和场板两者。场板包括第一半导体材料。

3. 发明申请

US20100117144A1 SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20100117144A1
公开(公告)日：2010-05-13
申请号：US12268182
申请日：2008-11-10
申请人： Franz Hirler , Walter Rieger , Andrew Wood , Mathias Born , Ralf Siemieniec , Jan Ropohl , Martin Poelzl , Oliver Blank , Uli Hiller , Oliver Haeberlen , Rudolf Zelsacher , Maximilian Roesch , Joachim Krumrey
发明人： Franz Hirler , Walter Rieger , Andrew Wood , Mathias Born , Ralf Siemieniec , Jan Ropohl , Martin Poelzl , Oliver Blank , Uli Hiller , Oliver Haeberlen , Rudolf Zelsacher , Maximilian Roesch , Joachim Krumrey
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/42376 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
摘要翻译：在一个实施例中，场效应晶体管具有半导体本体，第一导电类型的漂移区和栅电极。至少一个沟槽延伸到漂移区域中。至少在所述至少一个沟槽的一部分中布置场板。绝缘材料至少部分地围绕栅电极和场板两者。场板包括第一半导体材料。

4. 发明授权

US08362551B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08362551B2
公开(公告)日：2013-01-29
申请号：US13270253
申请日：2011-10-11
申请人： Franz Hirler , Walter Rieger , Andrew Wood , Mathias Born , Ralf Siemieniec , Jan Ropohl , Martin Poelzl , Oliver Blank , Uli Hiller , Oliver Haeberlein , Rudolf Zelsacher , Maximilian Roesch , Joachim Krumrey
发明人： Franz Hirler , Walter Rieger , Andrew Wood , Mathias Born , Ralf Siemieniec , Jan Ropohl , Martin Poelzl , Oliver Blank , Uli Hiller , Oliver Haeberlein , Rudolf Zelsacher , Maximilian Roesch , Joachim Krumrey
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/42376 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
摘要翻译：在一个实施例中，场效应晶体管具有半导体本体，第一导电类型的漂移区和栅电极。至少一个沟槽延伸到漂移区域中。至少在所述至少一个沟槽的一部分中布置场板。绝缘材料至少部分地围绕栅电极和场板两者。场板包括第一半导体材料。

5. 发明授权

US08193559B2 Monolithic semiconductor switches and method for manufacturing 有权
标题翻译：单片半导体开关及其制造方法
公开(公告)号：US08193559B2
公开(公告)日：2012-06-05
申请号：US13081642
申请日：2011-04-07
申请人： Oliver Haeberlen , Walter Rieger , Martin Vielemeyer , Lutz Goergens , Martin Poelzl , Milko Paolucci , Johannes Schoiswohl , Joachim Krumrey , Sonja Krumrey, legal representative
发明人： Oliver Haeberlen , Walter Rieger , Martin Vielemeyer , Lutz Goergens , Martin Poelzl , Milko Paolucci , Johannes Schoiswohl , Joachim Krumrey
IPC分类号： H01L29/66
CPC分类号： H01L23/495 , H01L21/823418 , H01L21/823475 , H01L21/823487 , H01L21/823814 , H01L21/823871 , H01L21/823885 , H01L23/492 , H01L23/49524 , H01L23/49562 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/73 , H01L27/088 , H01L27/092 , H01L27/0922 , H01L28/40 , H01L29/04 , H01L29/0653 , H01L29/0856 , H01L29/407 , H01L29/41 , H01L29/41741 , H01L29/4175 , H01L29/41766 , H01L29/66734 , H01L29/7803 , H01L29/7806 , H01L29/7809 , H01L29/781 , H01L29/7811 , H01L29/7813 , H01L29/7827 , H01L29/7835 , H01L2224/40247 , H01L2224/48091 , H01L2224/48247 , H01L2224/73219 , H01L2224/73221 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091 , H01L2924/19041 , H01L2924/19043 , H01L2924/19104 , H01L2924/30105 , H01L2924/30107 , H01L2224/45099 , H01L2924/00 , H01L2224/37099
摘要： One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides a semiconductor die with a first n-type channel FET and a second n-type channel FET. A source of the first n-type channel FET and a drain of the second n-type channel FET are electrically coupled to at least one contact area at a first side of the semiconductor die, respectively. A drain of the first n-type channel FET, a gate of the first n-type channel FET, a source of the second n-type channel FET and the gate of the second n-type channel FET are electrically coupled to contact areas at a second side of the semiconductor die opposite to the first side, respectively. The contact areas of the drain of the first n-type channel FET, of the gate of the first n-type channel FET, of the source of the second n-type channel FET and of the gate of the second n-type channel FET are electrically separated from each other, respectively.
摘要翻译：一个方面是单片半导体开关和制造方法。一个实施例提供具有第一n型沟道FET和第二n型沟道FET的半导体管芯。第一n型沟道FET的源极和第二n型沟道FET的漏极分别电耦合到半导体管芯的第一侧的至少一个接触区域。第一n型沟道FET的漏极，第一n型沟道FET的栅极，第二n型沟道FET的源极和第二n型沟道FET的栅极电耦合到接触区域半导体管芯的与第一侧相对的第二侧。第一n型沟道FET的漏极，第一n型沟道FET的栅极，第二n型沟道FET的源极和第二n型沟道FET的栅极的接触面积分别电分离。

6. 发明申请

US20120025304A1 Trench Semiconductor Device and Method of Manufacturing 有权
标题翻译：沟槽半导体器件及其制造方法
公开(公告)号：US20120025304A1
公开(公告)日：2012-02-02
申请号：US12847537
申请日：2010-07-30
申请人： Oliver Blank , Ralf Siemieniec , Martin Poelzl , Maximilian Roesch
发明人： Oliver Blank , Ralf Siemieniec , Martin Poelzl , Maximilian Roesch
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/513 , H01L29/518 , H01L29/66727 , H01L29/66734
摘要： A semiconductor device includes a semiconductor body including a trench with first and second opposing sidewalls. A first electrode is arranged in a lower portion of the trench and a second electrode in an upper portion of the trench. A dielectric structure is arranged in the trench, including a first portion between the electrodes. The first portion includes, in sequence along a lateral direction from the first sidewall to the second sidewall, a first part including a first dielectric material, a second part including a second dielectric material selectively etchable to the first dielectric material, a third part including the first dielectric material, the first dielectric material of the third part being continuously arranged along a vertical direction from a top side of the first electrode to a bottom side of the second electrode, a fourth part including the second dielectric material and a fifth part including the first dielectric material.
摘要翻译：半导体器件包括半导体本体，其包括具有第一和第二相对侧壁的沟槽。第一电极布置在沟槽的下部，沟槽的上部设有第二电极。电介质结构布置在沟槽中，包括电极之间的第一部分。第一部分沿着从第一侧壁到第二侧壁的横向方向依次包括包括第一电介质材料的第一部分，包括可选择性地蚀刻到第一电介质材料的第二电介质材料的第二部分，第三部分包括第一电介质材料，第三部分的第一介电材料沿着垂直方向从第一电极的顶侧到第二电极的底侧连续地布置，第四部分包括第二电介质材料，第五部分包括第第一介电材料。

7. 发明授权

US08487370B2 Trench semiconductor device and method of manufacturing 有权
标题翻译：沟槽半导体器件及其制造方法
公开(公告)号：US08487370B2
公开(公告)日：2013-07-16
申请号：US12847537
申请日：2010-07-30
申请人： Oliver Blank , Ralf Siemieniec , Martin Poelzl , Maximilian Roesch
发明人： Oliver Blank , Ralf Siemieniec , Martin Poelzl , Maximilian Roesch
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/513 , H01L29/518 , H01L29/66727 , H01L29/66734
摘要： A semiconductor device includes a semiconductor body including a trench with first and second opposing sidewalls. A first electrode is arranged in a lower portion of the trench and a second electrode in an upper portion of the trench. A dielectric structure is arranged in the trench, including a first portion between the electrodes. The first portion includes, in sequence along a lateral direction from the first sidewall to the second sidewall, a first part including a first dielectric material, a second part including a second dielectric material selectively etchable to the first dielectric material, a third part including the first dielectric material, the first dielectric material of the third part being continuously arranged along a vertical direction from a top side of the first electrode to a bottom side of the second electrode, a fourth part including the second dielectric material and a fifth part including the first dielectric material.
摘要翻译：半导体器件包括半导体本体，其包括具有第一和第二相对侧壁的沟槽。第一电极布置在沟槽的下部，沟槽的上部设有第二电极。电介质结构布置在沟槽中，包括电极之间的第一部分。第一部分沿着从第一侧壁到第二侧壁的横向方向依次包括第一部分，包括第一介电材料，第二部分包括可选择性地蚀刻到第一电介质材料的第二介电材料，第三部分包括第第一电介质材料，第三部分的第一介电材料沿着垂直方向从第一电极的顶侧到第二电极的底侧连续地布置，第四部分包括第二电介质材料，第五部分包括第第一介电材料。

8. 发明授权

US07943955B2 Monolithic semiconductor switches and method for manufacturing 有权
标题翻译：单片半导体开关及其制造方法
公开(公告)号：US07943955B2
公开(公告)日：2011-05-17
申请号：US12360263
申请日：2009-01-27
申请人： Oliver Haeberlen , Walter Rieger , Lutz Goergens , Martin Poelzl , Johannes Schoiswohl , Joachim Krumrey
发明人： Oliver Haeberlen , Walter Rieger , Lutz Goergens , Martin Poelzl , Johannes Schoiswohl , Joachim Krumrey
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L21/823418 , H01L21/823475 , H01L21/823487 , H01L21/823814 , H01L21/823871 , H01L21/823885 , H01L23/492 , H01L23/49524 , H01L23/49562 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/73 , H01L27/088 , H01L27/092 , H01L27/0922 , H01L29/04 , H01L29/0856 , H01L29/407 , H01L29/4175 , H01L29/41766 , H01L29/66734 , H01L29/7806 , H01L29/781 , H01L29/7827 , H01L29/7835 , H01L2224/40245 , H01L2224/451 , H01L2224/48247 , H01L2224/73219 , H01L2224/73221 , H01L2224/84801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19104 , H01L2924/30105 , H01L2924/30107 , H01L2924/00 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/37099
摘要： One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides one semiconductor die with a first and a second FET. One of source/drain of the first FET and one of source/drain of the second FET are electrically coupled to at least one contact area at a first side of one semiconductor die, respectively. The other one of source/drain of the first FET, a gate of the first FET, the other one of source/drain of the second FET and the gate of the second FET are electrically coupled to contact areas at a second side of the one semiconductor die opposite to the first side, respectively. The contact areas of the other one of source/drain of the first FET, of the gate of the first FET, of the other one of source/drain of the second FET and of the gate of the second FET are electrically separated from each other, respectively.
摘要翻译：一个方面是单片半导体开关和制造方法。一个实施例提供具有第一和第二FET的一个半导体管芯。第一FET的源极/漏极之一和第二FET的源极/漏极之一分别电耦合到一个半导体晶粒的第一侧上的至少一个接触区域。第一FET的源极/漏极中的另一个，第一FET的栅极，第二FET的源极/漏极和第二FET的栅极中的另一个电耦合到第一FET的第二侧的接触区域半导体管芯分别与第一侧相对。第一FET的源极/漏极，第一FET的栅极，第二FET的源极/漏极和第二FET的栅极之间的另一个的接触区域彼此电分离，分别。

9. 发明申请

US20100187605A1 MONOLITHIC SEMICONDUCTOR SWITCHES AND METHOD FOR MANUFACTURING 有权
标题翻译：单片半导体开关及其制造方法
公开(公告)号：US20100187605A1
公开(公告)日：2010-07-29
申请号：US12360263
申请日：2009-01-27
申请人： Oliver Haeberlen , Walter Rieger , Lutz Goergens , Martin Poelzl , Johannes Schoiswohl , Joachim Krumrey
发明人： Oliver Haeberlen , Walter Rieger , Lutz Goergens , Martin Poelzl , Johannes Schoiswohl , Joachim Krumrey
IPC分类号： H01L27/06 , H01L23/495 , H01L21/8234 , H01L21/50
CPC分类号： H01L29/7813 , H01L21/823418 , H01L21/823475 , H01L21/823487 , H01L21/823814 , H01L21/823871 , H01L21/823885 , H01L23/492 , H01L23/49524 , H01L23/49562 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/73 , H01L27/088 , H01L27/092 , H01L27/0922 , H01L29/04 , H01L29/0856 , H01L29/407 , H01L29/4175 , H01L29/41766 , H01L29/66734 , H01L29/7806 , H01L29/781 , H01L29/7827 , H01L29/7835 , H01L2224/40245 , H01L2224/451 , H01L2224/48247 , H01L2224/73219 , H01L2224/73221 , H01L2224/84801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19104 , H01L2924/30105 , H01L2924/30107 , H01L2924/00 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/37099
摘要： One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides one semiconductor die with a first and a second FET. One of source/drain of the first FET and one of source/drain of the second FET are electrically coupled to at least one contact area at a first side of one semiconductor die, respectively. The other one of source/drain of the first FET, a gate of the first FET, the other one of source/drain of the second FET and the gate of the second FET are electrically coupled to contact areas at a second side of the one semiconductor die opposite to the first side, respectively. The contact areas of the other one of source/drain of the first FET, of the gate of the first FET, of the other one of source/drain of the second FET and of the gate of the second FET are electrically separated from each other, respectively.
摘要翻译：一个方面是单片半导体开关和制造方法。一个实施例提供具有第一和第二FET的一个半导体管芯。第一FET的源极/漏极之一和第二FET的源极/漏极之一分别电耦合到一个半导体晶粒的第一侧上的至少一个接触区域。第一FET的源极/漏极中的另一个，第一FET的栅极，第二FET的源极/漏极和第二FET的栅极中的另一个电耦合到第一FET的第二侧的接触区域半导体管芯分别与第一侧相对。第一FET的源极/漏极，第一FET的栅极，第二FET的源极/漏极和第二FET的栅极之间的另一个的接触区域彼此电分离，分别。

10. 发明授权

US07091573B2 Power transistor 有权
标题翻译：功率晶体管
公开(公告)号：US07091573B2
公开(公告)日：2006-08-15
申请号：US10666228
申请日：2003-09-18
申请人： Franz Hirler , Jenoe Tihanyi , Ralf Henninger , Joachim Krumrey , Martin Poelzl , Walter Rieger
发明人： Franz Hirler , Jenoe Tihanyi , Ralf Henninger , Joachim Krumrey , Martin Poelzl , Walter Rieger
IPC分类号： H01L29/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/42376
摘要： The power transistor has a trench cell in a semiconductor body. A lower edge of the gate electrode has a profile which is not horizontal, i.e., not planar with respect to the field electrode.
摘要翻译：功率晶体管在半导体本体中具有沟槽单元。栅电极的下边缘具有不是水平的轮廓，即相对于场电极不是平面的。

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