专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07439957B2 Compact universal keyboard 有权
标题翻译：紧凑型通用键盘
公开(公告)号：US07439957B2
公开(公告)日：2008-10-21
申请号：US09768829
申请日：2001-01-25
申请人： Frank Rui-Feng Chu , Noboru Kamijo , Denny Duan-lee Tang
发明人： Frank Rui-Feng Chu , Noboru Kamijo , Denny Duan-lee Tang
IPC分类号： G09G5/00
CPC分类号： H04M1/23 , G06F1/1622 , G06F1/1626 , G06F1/163 , G06F1/1632 , G06F1/1662 , G06F1/1664 , G06F3/0236 , H04M1/0214 , H04M1/0231 , H04M1/0247
摘要： A keyboard type input device has multiple key positions provided as character entry keys. Each key corresponds to one key in the selected row of the conventional QWERTY keyboard. A second set of control buttons provide for the selection of which row of a conventional QWERTY keyboard are represented by the character keys in addition to other functions such as case shift, and alpha-numerical control functions. A selected row is shown on a display, as visual feedback. Alternatively the keys are implemented as LCDs with pressure sensors and the characters of the selected row are displayed directly on the corresponding key positions. The keyboard finds particular use in portable devices as it demands less space than traditional keyboards. The keyboard type input device is implemented with various electronic appliances, including portable phones.
摘要翻译：键盘型输入装置具有作为字符输入键提供的多个键位置。每个键对应于常规QWERTY键盘的所选行中的一个键。第二组控制按钮提供除了诸如情况移动和字母数字控制功能的其他功能之外，还可以选择常规QWERTY键盘的哪一行由字符键表示。所选行显示在显示屏上，作为视觉反馈。或者，键被实现为具有压力传感器的LCD，并且所选行的字符被直接显示在相应的键位置上。键盘在便携式设备中特别有用，因为它比传统键盘要求的空间要小。键盘式输入装置由包括便携式电话在内的各种电子设备实现。

2. 发明申请

US20080291172A1 COMPACT UNIVERSAL KEYBOARD 有权
标题翻译：紧凑通用键盘
公开(公告)号：US20080291172A1
公开(公告)日：2008-11-27
申请号：US12186939
申请日：2008-08-06
申请人： FRANK RUI-FENG CHU , Noboru Kamijo , Denny Duan-lee Tang
发明人： FRANK RUI-FENG CHU , Noboru Kamijo , Denny Duan-lee Tang
IPC分类号： G06F3/02
CPC分类号： H04M1/23 , G06F1/1622 , G06F1/1626 , G06F1/163 , G06F1/1632 , G06F1/1662 , G06F1/1664 , G06F3/0236 , H04M1/0214 , H04M1/0231 , H04M1/0247
摘要： A keyboard type input device used in conjunction with a wristwatch or a portable telephone has multiple key positions provided as character entry keys. Each key corresponds to one key in the selected row of the conventional QWERTY keyboard. A second set of control buttons provide for the selection of which row of a conventional QWERTY keyboard are represented by the character keys in addition to other functions such as case shift, and alpha-numerical control functions. A selected row is shown on a display, as visual feedback. Alternatively the keys are implemented as LCDs with pressure sensors and the characters of the selected row are displayed directly on the corresponding key positions. The keyboard finds particular use in portable devices as it demands less space than traditional keyboards.
摘要翻译：与手表或便携式电话一起使用的键盘型输入装置具有作为字符输入键提供的多个键位置。每个键对应于常规QWERTY键盘的所选行中的一个键。第二组控制按钮提供除了诸如情况移动和字母数字控制功能的其他功能之外，还可以选择常规QWERTY键盘的哪一行由字符键表示。所选行显示在显示屏上，作为视觉反馈。或者，键被实现为具有压力传感器的LCD，并且所选行的字符被直接显示在相应的键位置上。键盘在便携式设备中特别有用，因为它比传统键盘要求的空间要小。

3. 发明授权

US07759764B2 Elevated bipolar transistor structure 失效
标题翻译：高双极晶体管结构
公开(公告)号：US07759764B2
公开(公告)日：2010-07-20
申请号：US11698346
申请日：2007-01-26
申请人： Chuan-Ying Lee , Denny Duan-lee Tang
发明人： Chuan-Ying Lee , Denny Duan-lee Tang
IPC分类号： H01L29/00 , H01L29/70
CPC分类号： H01L29/73 , H01L27/2445 , H01L29/0804 , H01L29/1004 , H01L29/66242 , H01L29/66272 , H01L29/66318 , H01L29/732 , H01L29/7371 , H01L29/7378 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： A semiconductor structure includes a substrate; an isolation structure in the substrate, wherein the isolation structure defines a region therein; a first semiconductor region having at least a portion in the region defined by the isolation structure, wherein the first semiconductor region is of a first conductivity type; a second semiconductor region on the first semiconductor region, wherein the second semiconductor region is of a second conductivity type opposite the first conductivity type; and a third semiconductor region of the first conductivity type on the second semiconductor region, wherein the third semiconductor region has at least a portion higher than a top surface of the isolation structure.
摘要翻译：半导体结构包括基板; 衬底中的隔离结构，其中所述隔离结构在其中限定区域; 第一半导体区域，其具有由所述隔离结构限定的区域中的至少一部分，其中所述第一半导体区域是第一导电类型; 在所述第一半导体区域上的第二半导体区域，其中所述第二半导体区域是与所述第一导电类型相反的第二导电类型; 以及在第二半导体区域上具有第一导电类型的第三半导体区域，其中第三半导体区域具有比隔离结构的顶表面高至少一部分。

4. 发明授权

US06089749A Byte synchronization system and method using an error correcting code 失效
标题翻译：字节同步系统和使用纠错码的方法
公开(公告)号：US06089749A
公开(公告)日：2000-07-18
申请号：US889363
申请日：1997-07-08
申请人： Mario Blaum , Denny Duan-lee Tang , Takeo Yasuda
发明人： Mario Blaum , Denny Duan-lee Tang , Takeo Yasuda
IPC分类号： H03M13/00 , H03M13/39 , H03M13/41 , H04J3/06 , H04L7/04 , H04L25/497 , G06F11/00 , H04L12/00
CPC分类号： H03M13/6343 , H03M13/00 , H03M13/39 , H03M13/41 , H04J3/0608 , H04L25/497 , H04L7/048
摘要： A byte synchronization detection system and method in which a vector subtractor circuit determines an error vector between a current read data pattern and a synchronization bit pattern, and an offset adder circuit determines a Hamming Distance of the next read data pattern by adding the difference between the Hamming Distance from current error vector to the synchronization bit pattern and the Hamming Distance from the next error vector to the synchronization bit pattern. The Hamming Distance is determined by selected elements of the error vector which are the output from the vector subtractor circuit. The offset adder circuit determines a difference between the Hamming Distance of the current read data pattern and of the next read data pattern. The synchronization bit pattern is between 16 and 18 bits in length, inclusive. This approach reduces the probability of synchronization failure and/or mis-synchronization about 4 orders of magnitude over conventional approaches, while also reducing the length of the byte synchronization pattern to 16 bits.
摘要翻译：一种字节同步检测系统和方法，其中矢量减法器电路确定当前读取数据模式和同步位模式之间的误差向量，并且偏移加法器电路通过将下一个读取数据模式之间的差值相加来确定下一个读取数据模式的汉明距离汉明距当前误差矢量到同步位模式的距离以及从下一个误差向量到同步位模式的汉明距离。汉明距离由作为向量减法器电路的输出的误差向量的选定元素确定。偏移加法器电路确定当前读取数据模式的汉明距离和下一个读取数据模式之间的差值。同步位模式长度在16到18位之间，包括端点。与常规方法相比，该方法降低了同步失败和/或误差约4个数量级的概率，同时还将字节同步模式的长度减小到16位。

5. 发明申请

US20080132028A1 Method and Structure for Isolating Substrate Noise 有权
标题翻译：隔离基板噪声的方法和结构
公开(公告)号：US20080132028A1
公开(公告)日：2008-06-05
申请号：US11972482
申请日：2008-01-10
申请人： Wai-Yi Lien , Denny Duan-lee Tang
发明人： Wai-Yi Lien , Denny Duan-lee Tang
IPC分类号： H01L21/76
CPC分类号： H01L21/263 , H01L21/761
摘要： An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.
摘要翻译：提供了用于隔离衬底噪声的集成电路结构及其形成方法。在本发明的优选实施例中，使用质子轰击在第一电路区域和第二电路区域之间的衬底中形成半绝缘区域。沿着半绝缘区域形成两个保护环，每个在一侧。通过从衬底的背面进入衬底的质子轰击形成背面半绝缘区域。背面半绝缘区域优选与半绝缘区域连接。优选地，在背面半绝缘区域上形成接地保护层。

6. 发明授权

US06525717B1 Input device that analyzes acoustical signatures 失效
标题翻译：分析声学签名的输入设备
公开(公告)号：US06525717B1
公开(公告)日：2003-02-25
申请号：US09465746
申请日：1999-12-17
申请人： Denny Duan-lee Tang
发明人： Denny Duan-lee Tang
IPC分类号： G09G500
CPC分类号： G06F3/043 , G06F3/0202 , G06F3/0236
摘要： A virtual input device uses the acoustical signature of the user's fingers to determine which character is selected. Rows of acoustical sensors having different acoustical properties are spaced in the vertical direction. When a user touches a specific row with a particular finger a unique acoustical signature is produced. The acoustical signature is analyzed to determine the finger used, the row, and the specific action by the finger, e.g. slide, press, tap. The combinations of the row, finger and action define the character selected. The characters are associated with the combinations in such a way to provide a traditional keyboard setup. Visual feedback of the character selected is provided by a display device of the system.
摘要翻译：虚拟输入设备使用用户手指的声学签名来确定选择哪个字符。具有不同声学特性的声学传感器行在垂直方向上间隔开。当用户用特定手指触摸特定行时，产生独特的声学签名。分析声学特征以确定手指使用的手指，行和手指的具体动作，例如，滑动，按，点击。行，手指和动作的组合定义所选的字符。这些字符与组合相关联，以提供传统的键盘设置。所选择的角色的视觉反馈由系统的显示装置提供。

7. 发明授权

US08022382B2 Phase change memory devices with reduced programming current 有权
标题翻译：具有减少编程电流的相变存储器件
公开(公告)号：US08022382B2
公开(公告)日：2011-09-20
申请号：US11368192
申请日：2006-03-03
申请人： Li-Shyue Lai , Denny Duan-lee Tang , Wen-chin Lin , Teng-Chien Yu , Hui-Fang Tsai , Wei-Hsiang Wang , Shyhyeu Wang
发明人： Li-Shyue Lai , Denny Duan-lee Tang , Wen-chin Lin , Teng-Chien Yu , Hui-Fang Tsai , Wei-Hsiang Wang , Shyhyeu Wang
IPC分类号： H01L29/04 , H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/128 , H01L45/144 , H01L45/1666
摘要： A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. The phase change memory device may further include a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom electrode and the top electrode are preferably greater than the resistivity of the phase change material in the crystalline state.
摘要翻译：提供了一种相变存储器件及其形成方法。相变存储器件包括介电层中的导电电极，导电电极上的底电极，底电极上的相变层和相变层上的顶电极。相变存储器件还可以包括在相变层和顶部电极之间的散热层。底电极和顶电极的电阻率优选大于结晶态相变材料的电阻率。

8. 发明申请

US20100140580A1 Phase Change Memory 有权
标题翻译：相变记忆
公开(公告)号：US20100140580A1
公开(公告)日：2010-06-10
申请号：US12703571
申请日：2010-02-10
申请人： Tzyh-Cheang Lee , Ming-Yi Yang , Fu-Liang Yang , Denny Duan-lee Tang
发明人： Tzyh-Cheang Lee , Ming-Yi Yang , Fu-Liang Yang , Denny Duan-lee Tang
IPC分类号： H01L45/00
CPC分类号： G11C11/5678 , G11C13/0004 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A phase change memory is provided. The method includes forming contact plugs in a first dielectric layer. A second dielectric layer is formed overlying the first dielectric layer and a trench formed therein exposing portions of the contact plugs. A metal layer is formed over surfaces of the trench. One or more heaters are formed from the metal layer such that each heater is formed along one or more sidewalls of the trench, wherein the portion of the heater along the sidewalls does not include a corner region of adjacent sidewalls. The trench is filled with a third dielectric layer, and a fourth dielectric layer is formed over the third dielectric layer. Trenches are formed in the fourth dielectric layer and filled with a phase change material. An electrode is formed over the phase change material.
摘要翻译：提供了相变存储器。该方法包括在第一电介质层中形成接触塞。形成第二电介质层，覆盖第一电介质层和形成在其中的沟槽，暴露接触插塞的部分。在沟槽的表面上形成金属层。从金属层形成一个或多个加热器，使得每个加热器沿着沟槽的一个或多个侧壁形成，其中加热器沿侧壁的部分不包括相邻侧壁的拐角区域。沟槽填充有第三电介质层，并且在第三介电层上形成第四电介质层。在第四电介质层中形成沟槽并填充相变材料。在相变材料上形成电极。

9. 发明授权

US07537982B2 Method and structure for isolating substrate noise 有权
标题翻译：隔离衬底噪声的方法和结构
公开(公告)号：US07537982B2
公开(公告)日：2009-05-26
申请号：US11972482
申请日：2008-01-10
申请人： Wai-Yi Lien , Denny Duan-lee Tang
发明人： Wai-Yi Lien , Denny Duan-lee Tang
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L21/263 , H01L21/761
摘要： An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.
摘要翻译：提供了用于隔离衬底噪声的集成电路结构及其形成方法。在本发明的优选实施例中，使用质子轰击在第一电路区域和第二电路区域之间的衬底中形成半绝缘区域。沿着半绝缘区域形成两个保护环，每个在一侧。通过从衬底的背面进入衬底的质子轰击形成背面半绝缘区域。背面半绝缘区域优选与半绝缘区域连接。优选地，在背面半绝缘区域上形成接地保护层。

10. 发明授权

US07492018B2 Isolating substrate noise by forming semi-insulating regions 有权
标题翻译：通过形成半绝缘区域隔离衬底噪声
公开(公告)号：US07492018B2
公开(公告)日：2009-02-17
申请号：US11089186
申请日：2005-03-24
申请人： Wai-Yi Lien , Denny Duan-lee Tang
发明人： Wai-Yi Lien , Denny Duan-lee Tang
IPC分类号： H01L29/76 , H01L29/47
CPC分类号： H01L21/263 , H01L21/761
摘要： An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.
摘要翻译：提供了用于隔离衬底噪声的集成电路结构及其形成方法。在本发明的优选实施例中，使用质子轰击在第一电路区域和第二电路区域之间的衬底中形成半绝缘区域。沿着半绝缘区域形成两个保护环，每个在一侧。通过从衬底的背面进入衬底的质子轰击形成背面半绝缘区域。背面半绝缘区域优选与半绝缘区域连接。优选地，在背面半绝缘区域上形成接地保护层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式