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1. 发明申请

US20120313201A1 OPTICAL SENSOR DEVICES INCLUDING FRONT-END-OF-LINE (FEOL) OPTICAL FILTERS AND METHODS FOR FABRICATING OPTICAL SENSOR DEVICES 审中-公开
标题翻译：包括前端（FEOL）光学滤波器的光学传感器装置和用于制造光学传感器装置的方法
公开(公告)号：US20120313201A1
公开(公告)日：2012-12-13
申请号：US13466867
申请日：2012-05-08
申请人： Francois Hebert , Jonathan Herman , I-Shan Sun
发明人： Francois Hebert , Jonathan Herman , I-Shan Sun
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： G02B5/285 , H01L31/02165 , H01L31/103
摘要： Optical sensor devices, and methods of manufacturing the same, are described herein. In an embodiment, a monolithic optical sensor device includes a semiconductor substrate having a trench, with a photodetector region under said trench. An optical filter is formed in the trench and over at least a portion of the photodetector region. One or more metal structures extend above a top surface of said optical filter. The trench, photodetector region and optical filter are formed as part of a front-end-of-line (FEOL) semiconductor fabrication process. The one or more metal structures are formed as part of a back-end-of-line (BEOL) semiconductor fabrication process.
摘要翻译：光传感器装置及其制造方法在此描述。在一个实施例中，单片光学传感器装置包括具有沟槽的半导体衬底，在所述沟槽下方具有光电检测器区域。滤光器形成在沟槽中并且在光电检测器区域的至少一部分上方。一个或多个金属结构在所述滤光器的顶表面上方延伸。沟槽，光电检测器区域和滤光器形成为前端（FEOL）半导体制造工艺的一部分。一个或多个金属结构形成为后端（BEOL）半导体制造工艺的一部分。

2. 发明授权

US06855585B1 Integrating multiple thin film resistors 有权
标题翻译：集成多个薄膜电阻
公开(公告)号：US06855585B1
公开(公告)日：2005-02-15
申请号：US10002429
申请日：2001-10-31
申请人： Alexander Kalnitsky , Joseph Paul Elull , Ralph Wall , Robert F. Scheer , Jonathan Herman , Glenn Nobinger , Viktor Zekeriya
发明人： Alexander Kalnitsky , Joseph Paul Elull , Ralph Wall , Robert F. Scheer , Jonathan Herman , Glenn Nobinger , Viktor Zekeriya
IPC分类号： H01L27/01 , H01L27/08 , H01L21/302
CPC分类号： H01L27/0802 , H01L27/016
摘要： A method for forming multiple resistors on a substrate. The method initially includes providing a first resistor on the substrate. A first dielectric layer is deposited, patterned, and selectively etched over the first resistor. Second resistor material is provided over the first dielectric layer. Furthermore, landing pad material is provided over the second resistor material. The landing pad material and the second resistor material are then selectively etched. The selective etching forms contacts for the first resistor in a first region, and forms a second resistor and associated contacts in a second region.
摘要翻译：一种在衬底上形成多个电阻器的方法。该方法最初包括在衬底上提供第一电阻器。在第一电阻器上沉积，图案化和选择性蚀刻第一电介质层。第二电阻材料设置在第一介电层上。此外，着陆垫材料设置在第二电阻材料上。然后选择性地蚀刻着陆焊盘材料和第二电阻材料。选择性蚀刻在第一区域中形成用于第一电阻器的触点，并且在第二区域中形成第二电阻器和相关联的触点。

3. 发明授权

US06358809B1 Method of modifying properties of deposited thin film material 有权
标题翻译：改善沉积薄膜材料性能的方法
公开(公告)号：US06358809B1
公开(公告)日：2002-03-19
申请号：US09764812
申请日：2001-01-16
申请人： Glenn Nobinger , Alexander Kalnitsky , Melvin Schmidt , Jonathan Herman , Viktor Zekeriya , Vijaykumar Ullal , Daniel H. Rosenblatt , Joseph P. Ellul
发明人： Glenn Nobinger , Alexander Kalnitsky , Melvin Schmidt , Jonathan Herman , Viktor Zekeriya , Vijaykumar Ullal , Daniel H. Rosenblatt , Joseph P. Ellul
IPC分类号： H01L2120
CPC分类号： H01L28/24 , H01L21/265
摘要： A method of modifying a layer of thin film composite material to achieve one or more desired properties for the thin film layer which cannot be achieved by heat treatment at all practical temperatures of operation allowable by particular integrated circuit processes. In particular, the thin film composite material is subjected to an ion implantation process. Depending on the doping species, the doping concentration, the doping energy, and other ion implantation parameters, one or more properties of the deposited thin film resistive layer can be modified. Such properties may include electrical, optical, thermal and physical properties. For instance, the sheet resistance and/or the temperature coefficient of resistance of the thin film composite material may be increased or decreased by appropriately implanting ions into the material. The ion implantation can be applied globally in order to modify one or more properties of the entire deposited thin film composite layer. Alternatively, the ion implantation can be applied regionally in order to modify the thin film composite material at a first region, not modify the thin film composite material at a second region, and/or modify the thin film composite material in another way at a third region.
摘要翻译：一种改变薄膜复合材料层的方法，以实现薄膜层的一个或多个期望的性能，这在特定集成电路工艺允许的所有实际操作温度下都不能通过热处理实现。特别地，对薄膜复合材料进行离子注入工艺。根据掺杂种类，掺杂浓度，掺杂能和其它离子注入参数，可以修改沉积的薄膜电阻层的一个或多个特性。这些性质可以包括电，光，热和物理性质。例如，通过将离子适当地注入到材料中，薄膜复合材料的薄层电阻和/或电阻温度系数可以增加或减少。可以全局地应用离子注入，以便修饰整个沉积的薄膜复合层的一个或多个特性。或者，可以区域地施加离子注入，以便在第一区域改性薄膜复合材料，而不是在第二区域改变薄膜复合材料，和/或以另一种方式在第三区域改性薄膜复合材料地区。

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