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    • 1. 发明授权
    • Chip C4 assembly improvement using magnetic force and adhesive
    • 芯片C4组装改进使用磁力和粘合剂
    • US6142361A
    • 2000-11-07
    • US458483
    • 1999-12-09
    • Francis J. Downes, Jr.Robert M. JappMark V. Pierson
    • Francis J. Downes, Jr.Robert M. JappMark V. Pierson
    • H01L21/60H05K3/30H05K3/34B23K1/20B23K31/02
    • H01L24/81B23K2201/40H01L2224/81801H01L2924/01006H01L2924/01033H01L2924/0105H01L2924/01082H01L2924/01322H01L2924/014H01L2924/14H05K3/303H05K3/3436Y10T29/4913Y10T29/53196
    • A method, and associated structure, for adhesively coupling a chip to an organic chip carrier. The chip is attached to a top surface of the organic chip carrier by interfacing a solder bump between a C4 solder structure on the chip and a pad on a top surface of the chip carrier. The melting temperature of the solder bump is less than the melting temperature of the C4 solder structure. A block of ferrous material is placed on a top surface of the chip. A temporary or permanent stiffener of ferrous material is placed on the top surface of the chip carrier. A permanent magnet is coupled to a bottom surface of the chip carrier. Alternatively, an electromagnetic could be utilized instead of the electromagnet. Due to the permanent magnet or the electromagnet, a magnetic force on the stiffener is directed toward the magnet and substantially flattens the first surface of the chip carrier. Similarly, a magnetic force on the block is directed toward the magnet such that the electronic component and the chip carrier are held in alignment. The solder bump is reflowed at a temperature between the melting temperature of the solder bump and the melting temperature of the C4 solder structure. The reflowing reconfigures the solder bump. The magnetic force on the block frictionally clamps the reflowed solder between the C4 solder structure and the pad. The chip and carrier are cooled, resulting in the C4 solder structure being adhesively and conductively coupled to the pad.
    • 一种用于将芯片粘合地耦合到有机芯片载体的方法和相关联的结构。 芯片通过在芯片上的C4焊料结构和芯片载体的顶表面上的焊盘之间接合焊料凸块来附接到有机芯片载体的顶表面。 焊料凸点的熔化温度小于C4焊料结构的熔化温度。 将一块黑色金属材料放置在芯片的上表面上。 铁芯材料的临时或永久性加强件被放置在芯片载体的顶表面上。 永磁体耦合到芯片载体的底表面。 或者,可以使用电磁来代替电磁体。 由于永磁体或电磁体,加强件上的磁力被引向磁体并且基本平坦化芯片载体的第一表面。 类似地,块上的磁力指向磁体,使得电子部件和芯片载体保持对准。 在焊料凸块的熔化温度和C4焊料结构的熔化温度之间的温度下回流焊料凸点。 回流重新配置焊料凸块。 块上的磁力摩擦地夹住C4焊料结构和焊盘之间的回流焊料。 芯片和载体被冷却,导致C4焊料结构被粘性地导电耦合到焊盘。
    • 2. 发明授权
    • Chip C4 assembly improvement using magnetic force and adhesive
    • 芯片C4组装改进使用磁力和粘合剂
    • US06429384B1
    • 2002-08-06
    • US09588836
    • 2000-06-07
    • Francis J. Downes, Jr.Robert M. JappMark V. Pierson
    • Francis J. Downes, Jr.Robert M. JappMark V. Pierson
    • H05K116
    • H01L24/81B23K2101/40H01L2224/81801H01L2924/01006H01L2924/01033H01L2924/0105H01L2924/01082H01L2924/01322H01L2924/014H01L2924/14H05K3/303H05K3/3436Y10T29/4913Y10T29/53196
    • A structure that adhesively couples a chip to an organic chip carrier. The chip is attached to a top surface of the organic chip carrier by interfacing a solder bump between a C4 solder structure on the chip and a pad on a top surface of the chip carrier. The melting temperature of the solder bump is less than the melting temperature of the C4 solder structure. A block of ferrous material is on a top surface of the chip. A temporary or permanent stiffener of ferrous material is on the top surface of the chip carrier. A permanent magnet is coupled to a bottom surface of the chip carrier. Alternatively, an electromagnetic could be utilized instead of the electromagnet. Due to the permanent magnet or the electromagnet, a magnetic force on the stiffener is directed toward the magnet and substantially flattens the first surface of the chip carrier. Similarly, a magnetic force on the block is directed toward the magnet such that the electronic component and the chip carrier are held in alignment. After the solder bump has been reflowed at a temperature between the melting temperature of the solder bump and the melting temperature of the C4 solder structure, the solder bump is reconfigured. The magnetic force on the block frictionally clamps the reflowed solder between the C4 solder structure and the pad. After the chip and carrier are cooled, the C4 solder structure is adhesively and conductively coupled to the pad.
    • 将芯片与有机芯片载体粘接的结构。 芯片通过在芯片上的C4焊料结构和芯片载体的顶表面上的焊盘之间接合焊料凸块来附接到有机芯片载体的顶表面。 焊料凸点的熔化温度小于C4焊料结构的熔化温度。 铁质材料块在芯片的顶表面上。 铁质材料的临时或永久性加强件位于芯片载体的顶表面上。 永磁体耦合到芯片载体的底表面。 或者,可以使用电磁来代替电磁体。 由于永磁体或电磁体,加强件上的磁力被引向磁体并且基本平坦化芯片载体的第一表面。 类似地,块上的磁力指向磁体,使得电子部件和芯片载体保持对准。 在焊料凸块的熔化温度和C4焊料结构的熔化温度之间的温度下回流焊料凸点之后,重新配置焊料凸点。 块上的磁力摩擦地夹住C4焊料结构和焊盘之间的回流焊料。 在芯片和载体被冷却之后,C4焊料结构粘合地并且导电地耦合到焊盘。
    • 7. 发明授权
    • Formation of a metallic interlocking structure
    • 形成金属互锁结构
    • US06693031B2
    • 2004-02-17
    • US10039710
    • 2002-01-04
    • Gerald G. Advocate, Jr.Francis J. Downes, Jr.Luis J. MatienzoRonald A. KaschakJohn S. KresgeDaniel C. Van Hart
    • Gerald G. Advocate, Jr.Francis J. Downes, Jr.Luis J. MatienzoRonald A. KaschakJohn S. KresgeDaniel C. Van Hart
    • H01L2144
    • H01L23/5226H01L23/49827H01L2924/0002H05K3/0035H05K3/027H05K3/06H05K3/383H05K3/421H05K3/4644H05K2201/0248H05K2201/09509H05K2201/09563H05K2203/0307H05K2203/0353H01L2924/00
    • An electronic structure including a metallic interlocking structure for bonding a conductive plated layer to metal surface, and a method of forming the electronic structure. The method provides a substrate having a metallic sheet within a dielectric layer. The metallic sheet includes a metal such as copper. An opening in the substrate, such as a blind via, is formed by laser drilling through the dielectric layer and partially through the metallic sheet. If the opening is a blind via, then the laser drilling is within an outer ring of the blind via cross section using a laser beam having a target diameter between about 20% and about 150% of a radius of the blind via cross section. A surface at the bottom of the opening, called a “blind surface,” includes a metallic protrusion formed by the laser drilling, such that the metallic protrusion is integral with a portion of the blind surface. The metallic protrusion includes the metal of the metallic sheet and at least one constituent element from the dielectric layer. The metallic protrusion is then etched to form a metallic interlocking structure that is integral with the portion of the blind surface. The metallic interlocking structure includes discrete metallic fibers, with each metallic fiber having a curved (or curled) geometry. Each metallic fiber has its own unique composition that includes the metal, at least one constituent element of the dielectric layer, or both.
    • 一种电子结构,包括用于将导电镀层接合到金属表面的金属互锁结构,以及形成电子结构的方法。 该方法提供了在电介质层内具有金属片的衬底。 金属片包括铜等金属。 通过激光钻孔穿过电介质层并且部分地穿过金属片,形成诸如盲孔之类的衬底中的开口。 如果开口是盲孔,则激光钻孔是通过横截面的盲孔通过横截面的半径的约20%至约150%之间的目标直径的激光束在盲孔的外环内。 在开口底部的称为“盲面”的表面包括通过激光钻孔形成的金属突起,使得金属突起与盲表面的一部分成一体。 金属突起包括金属片的金属和来自电介质层的至少一个构成元件。 然后蚀刻金属突起以形成与盲表面的一部分成一体的金属互锁结构。 金属互锁结构包括分立的金属纤维,每个金属纤维具有弯曲(或卷曲)的几何形状。 每种金属纤维具有其独特的组成,其包括金属,介电层的至少一个构成元件,或两者。