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1. 发明授权

US06858828B2 Photocell incorporating a lightguide and matrix composed of such photocells 有权
标题翻译：光电池结合了光导和由这种光电池组成的矩阵
公开(公告)号：US06858828B2
公开(公告)日：2005-02-22
申请号：US10246804
申请日：2002-09-18
申请人： François Roy , Thierry Devoivre , Yann Marcellier
发明人： François Roy , Thierry Devoivre , Yann Marcellier
IPC分类号： H01L27/146 , H01L27/00
CPC分类号： H01L27/14609 , H01L27/14621 , H01L27/14627
摘要： A photocell having an entry face for the light and a photosensitive element, as well as to a matrix composed of such photocells. A lightguide-forming element placed between the entry face and the photosensitive element of the photocell ensures optical coupling between the latter two components. It makes it possible to place on either side of the photosensitive element electronic components for reading and for controlling the photocell, while reducing the loss of light incident on the entry face corresponding to the rays which would strike these electronic components. This lightguide-forming element is composed of at least three dielectric materials having different respective optical refractive indices and placed within concentric volumes.
摘要翻译：具有用于光的入射面和感光元件的光电管，以及由这种光电池组成的矩阵。放置在光电元件的入射面和感光元件之间的光导形成元件确保后两个部件之间的光耦合。它可以放置在用于读取和控制光电元件的感光元件电子部件的两侧，同时减少入射到入射面上的光的损失，该入射面对应于将撞击这些电子部件的光线。该光导形成元件由具有不同相应光折射率的至少三个电介质材料组成并且被放置在同心体积内。

2. 发明授权

US07964928B2 Photodetector with an improved resolution 有权
标题翻译：光检测器具有改进的分辨率
公开(公告)号：US07964928B2
公开(公告)日：2011-06-21
申请号：US11602053
申请日：2006-11-20
申请人： François Roy , Thomas Girault , Yann Marcellier , Caroline Bringolf-Penner
发明人： François Roy , Thomas Girault , Yann Marcellier , Caroline Bringolf-Penner
IPC分类号： H01L31/00
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/1463 , H01L27/14641 , H01L27/14689
摘要： A photodetector made in monolithic form in a lightly-doped substrate of a first conductivity type. This photodetector includes at least two photodiodes and includes a first region of the first conductivity type more heavily doped than the substrate extending at least between the two photodiodes; and a second region of the first conductivity type more heavily doped than the substrate and extending under the first region and under one of the two photodiodes, the first region or the second region, with the first region, delimiting a substrate portion at the level of said one of the two photodiodes, and the second region, with the first region, delimiting an additional substrate portion at the level of the other one of the two photodiodes.
摘要翻译：在第一导电类型的轻掺杂衬底中制成单片形式的光电探测器。该光电检测器包括至少两个光电二极管，并且包括比至少在两个光电二极管之间延伸的衬底更重掺杂的第一导电类型的第一区域; 以及第一导电类型的第二区域，其比衬底更重掺杂，并且在第一区域的第一区域下方和在两个光电二极管中的一个之下延伸，第一区域或第二区域具有第一区域，将衬底部分限定在所述两个光电二极管中的一个以及具有第一区域的第二区域限定在两个光电二极管中的另一个的水平处的附加衬底部分。

3. 发明授权

US08754456B2 Miniature image sensor 有权
标题翻译：微型图像传感器
公开(公告)号：US08754456B2
公开(公告)日：2014-06-17
申请号：US12534344
申请日：2009-08-03
申请人： François Roy , Arnaud Tournier
发明人： François Roy , Arnaud Tournier
IPC分类号： H01L31/036
CPC分类号： H01L27/1463 , H01L21/26586 , H01L27/14634 , H01L27/1464 , H01L27/1469 , H01L29/045
摘要： An image sensor including at least one photodiode and at least one transistor formed in and on a silicon substrate, the assembly of the photodiode and of the transistor being surrounded with a heavily-doped insulating wall, wherein the silicon substrate has a crystal orientation (110).
摘要翻译：包括至少一个光电二极管和形成于硅衬底中的至少一个晶体管的图像传感器，所述光电二极管和所述晶体管的组件被重掺杂的绝缘壁包围，其中所述硅衬底具有晶体取向（110 ）。

4. 发明授权

US08680453B2 Imaging device with charge collection zone and charge storage zone 有权
标题翻译：具有电荷收集区和电荷存储区的成像装置
公开(公告)号：US08680453B2
公开(公告)日：2014-03-25
申请号：US13183949
申请日：2011-07-15
申请人： François Roy
发明人： François Roy
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14612 , H01L27/14654
摘要： Imaging device comprising at least one photosite comprising a charge storage semiconductor zone, a charge collection semiconductor zone and transfer means designed to permit charge transfer between the charge storage zone and the charge collection zone, characterized in that the charge storage semiconductor zone comprises a lower semiconductor zone and a conduction channel buried beneath the upper surface of the photosite and connecting said lower semiconductor zone to the charge collection zone.
摘要翻译：成像装置包括至少一个光电子，其包括电荷存储半导体区，电荷收集半导体区和设计成允许电荷存储区与电荷收集区之间的电荷转移的转移装置，其特征在于，电荷存储半导体区包括下半导体区和导电通道，该导电通道掩埋在光子的上表面之下，并将所述下半导体区连接到电荷收集区。

5. 发明授权

US08669510B2 Imaging device in particular of the CMOS time delay and integration type 有权
标题翻译：成像设备特别是CMOS延时和集成型
公开(公告)号：US08669510B2
公开(公告)日：2014-03-11
申请号：US13240483
申请日：2011-09-22
申请人： François Roy
发明人： François Roy
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14806 , H04N5/3743
摘要： An imaging device may be formed in a semiconductor substrate including a matrix array of photosites extending in a first direction and a second direction. The imaging device may include a transfer module configured to transfer charge in the first direction and an extraction module configured to extract charge in the second direction.
摘要翻译：成像装置可以形成在包括在第一方向和第二方向上延伸的光电子的矩阵阵列的半导体衬底中。成像装置可以包括被配置为沿第一方向传送电荷的传送模块和被配置为在第二方向上提取电荷的提取模块。

6. 发明申请

US20120261670A1 BACK-SIDE ILLUMINATED IMAGE SENSOR WITH A JUNCTION INSULATION 有权
标题翻译：具有连接绝缘的背面照明图像传感器
公开(公告)号：US20120261670A1
公开(公告)日：2012-10-18
申请号：US13445199
申请日：2012-04-12
申请人： Michel Marty , François Roy , Jens Prima
发明人： Michel Marty , François Roy , Jens Prima
IPC分类号： H01L31/0368 , H01L31/20
CPC分类号： H01L27/1464 , H01L27/1463 , H01L27/14683 , H01L27/14687 , H01L27/14689
摘要： A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.
摘要翻译：一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸，进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。

7. 发明授权

US08053353B2 Method of making connections in a back-lit circuit 有权
标题翻译：在背光电路中进行连接的方法
公开(公告)号：US08053353B2
公开(公告)日：2011-11-08
申请号：US12431439
申请日：2009-04-28
申请人： François Roy
发明人： François Roy
IPC分类号： H01L21/4763
CPC分类号： H01L27/14689 , H01L21/76898 , H01L23/481 , H01L27/14636 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： A method for forming, on a surface of a thinned-down semiconductor substrate, a contact connected to a metal track of an interconnect stack formed on the opposite surface of the thinned-down substrate, including the steps of: forming, on the side of a first surface of a substrate, an insulating region penetrating into the substrate and coated with a conductive region and with an insulating layer crossed by conductive vias, the vias connecting a metal track of the interconnect stack to the conductive region; gluing the external surface of the interconnect stack on a support and thinning down the substrate; etching the external surface of the thinned-down substrate and stopping on the insulating region; etching the insulating region and stopping on the conductive region; and filling the etched opening with a metal.
摘要翻译：在薄型半导体衬底的表面上形成连接到形成在薄型衬底的相对表面上的互连叠层的金属轨道的接触的方法，包括以下步骤：在衬底的第一表面，穿透到衬底中并涂覆有导电区域并且具有由导电通孔交叉的绝缘层的绝缘区域，将互连叠层的金属轨道连接到导电区域的通孔; 将互连叠层的外表面胶合在支撑件上并使基板变薄; 蚀刻薄的衬底的外表面并停止在绝缘区上; 蚀刻绝缘区域并停止在导电区域上; 并用金属填充蚀刻开口。

8. 发明授权

US07642579B2 Image sensor comprising pixels with one transistor 有权
标题翻译：图像传感器包括具有一个晶体管的像素
公开(公告)号：US07642579B2
公开(公告)日：2010-01-05
申请号：US11713903
申请日：2007-03-05
申请人： Arnaud Tournier , François Roy
发明人： Arnaud Tournier , François Roy
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14601 , H01L27/1463 , H01L27/14654
摘要： A pixel having a MOS-type transistor formed in and above a semiconductor substrate of a first doping type, a buried semiconductor layer of a second doping type being placed in the substrate under the MOS transistor and separated therefrom by a substrate portion forming a well. The buried semiconductor layer comprises a thin portion forming a pinch area placed under the transistor channel area and a thick portion placed under all or part of the source/drain areas of the transistor.
摘要翻译：形成在第一掺杂型半导体衬底中和上方的MOS型晶体管的像素，第二掺杂类型的掩埋半导体层被放置在MOS晶体管下方的衬底中，并由形成阱的衬底部分分离。掩埋半导体层包括形成位于晶体管沟道区域下方的夹紧区域的薄部分和放置在晶体管的源极/漏极区域全部或部分之下的厚部分。

9. 发明授权

US08937341B2 Two-phase charge-coupled device 有权
标题翻译：两相电荷耦合器件
公开(公告)号：US08937341B2
公开(公告)日：2015-01-20
申请号：US12821807
申请日：2010-06-23
申请人： François Roy
发明人： François Roy
IPC分类号： H01L29/80 , H01L29/768 , H01L27/148
CPC分类号： H01L29/76808 , H01L27/14812 , H01L29/76841
摘要： A charge-coupled unit formed in a semiconductor substrate and including an array of identical electrodes forming rows and columns, wherein: each electrode extends in a cavity with insulated walls formed of a groove, oriented along a row, dug into the substrate thickness, and including, at one of its ends, a protrusion extending towards at least one adjacent row.
摘要翻译：一种电荷耦合单元，其形成在半导体衬底中并且包括形成行和列的相同电极的阵列，其中：每个电极在空腔中延伸，所述绝缘壁由沿着行定向的凹槽形成，被切割成衬底厚度，以及包括在其一端的朝向至少一个相邻行延伸的突起。

10. 发明授权

US08853755B2 Image sensor pixel circuit 有权
标题翻译：图像传感器像素电路
公开(公告)号：US08853755B2
公开(公告)日：2014-10-07
申请号：US12889537
申请日：2010-09-24
申请人： Frédéric Barbier , François Roy
发明人： Frédéric Barbier , François Roy
IPC分类号： H01L31/113 , H04N5/365 , H01L27/146 , H04N5/378 , H04N5/3745
CPC分类号： H04N5/378 , H01L27/14609 , H01L27/1463 , H01L27/14683 , H04N5/365 , H04N5/3745
摘要： A pixel circuit of an image sensor includes a sense node for storing a charge transferred from one or more photodiodes, a source follower transistor having its gate coupled to the sense node and its source node coupled to an output line of the pixel circuit via a read transistor, wherein a body contact of the source follower transistor is connected to the output line.
摘要翻译：图像传感器的像素电路包括用于存储从一个或多个光电二极管传送的电荷的感测节点，源极跟随器晶体管，其栅极耦合到感测节点，其源极节点通过读取耦合到像素电路的输出线晶体管，其中源极跟随器晶体管的体接触连接到输出线。

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