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1. 发明授权

US08754456B2 Miniature image sensor 有权
标题翻译：微型图像传感器
公开(公告)号：US08754456B2
公开(公告)日：2014-06-17
申请号：US12534344
申请日：2009-08-03
申请人： François Roy , Arnaud Tournier
发明人： François Roy , Arnaud Tournier
IPC分类号： H01L31/036
CPC分类号： H01L27/1463 , H01L21/26586 , H01L27/14634 , H01L27/1464 , H01L27/1469 , H01L29/045
摘要： An image sensor including at least one photodiode and at least one transistor formed in and on a silicon substrate, the assembly of the photodiode and of the transistor being surrounded with a heavily-doped insulating wall, wherein the silicon substrate has a crystal orientation (110).
摘要翻译：包括至少一个光电二极管和形成于硅衬底中的至少一个晶体管的图像传感器，所述光电二极管和所述晶体管的组件被重掺杂的绝缘壁包围，其中所述硅衬底具有晶体取向（110 ）。

2. 发明授权

US07642579B2 Image sensor comprising pixels with one transistor 有权
标题翻译：图像传感器包括具有一个晶体管的像素
公开(公告)号：US07642579B2
公开(公告)日：2010-01-05
申请号：US11713903
申请日：2007-03-05
申请人： Arnaud Tournier , François Roy
发明人： Arnaud Tournier , François Roy
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14601 , H01L27/1463 , H01L27/14654
摘要： A pixel having a MOS-type transistor formed in and above a semiconductor substrate of a first doping type, a buried semiconductor layer of a second doping type being placed in the substrate under the MOS transistor and separated therefrom by a substrate portion forming a well. The buried semiconductor layer comprises a thin portion forming a pinch area placed under the transistor channel area and a thick portion placed under all or part of the source/drain areas of the transistor.
摘要翻译：形成在第一掺杂型半导体衬底中和上方的MOS型晶体管的像素，第二掺杂类型的掩埋半导体层被放置在MOS晶体管下方的衬底中，并由形成阱的衬底部分分离。掩埋半导体层包括形成位于晶体管沟道区域下方的夹紧区域的薄部分和放置在晶体管的源极/漏极区域全部或部分之下的厚部分。

3. 发明申请

US20130026546A1 INTEGRATED CIRCUIT COMPRISING AN ISOLATING TRENCH AND CORRESPONDING METHOD 审中-公开
标题翻译：集成电路包含隔离稳定器和相应的方法
公开(公告)号：US20130026546A1
公开(公告)日：2013-01-31
申请号：US13560413
申请日：2012-07-27
申请人： Laurent Favennec , Arnaud Tournier , François Roy
发明人： Laurent Favennec , Arnaud Tournier , François Roy
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/76237
摘要： An integrated circuit including at least one isolating trench that delimits an active area made of a monocrystalline semiconductor material, the or each trench including an upper portion including an insulating layer that encapsulates a lower portion of the trench, the lower portion being at least partly buried in the active area and the encapsulation layer including nitrogen or carbon.
摘要翻译：一种集成电路，其包括限定由单晶半导体材料制成的有源区域的至少一个隔离沟槽，所述或每个沟槽包括上部，该上部包括封装沟槽的下部的绝缘层，所述下部至少部分地被埋置在活性区域和包封层中包括氮或碳。

4. 发明授权

US07875915B2 Integrated circuit comprising a photodiode of the floating substrate type and corresponding fabrication process 有权
标题翻译：集成电路包括浮置衬底类型的光电二极管和相应的制造工艺
公开(公告)号：US07875915B2
公开(公告)日：2011-01-25
申请号：US11432675
申请日：2006-05-10
申请人： François Roy , Arnaud Tournier
发明人： François Roy , Arnaud Tournier
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/1443 , H01L27/14609
摘要： An integrated circuit includes at least one photodiode associated with a read transistor. The photodiode is formed from a stack of three semiconductor layers comprising a buried layer, an floating substrate layer and an upper layer. The drain region and/or the source region of the transistor are incorporated within the upper layer. The buried layer is electrically isolated from the upper layer so as to allow the buried layer to be biased independently of the upper layer.
摘要翻译：集成电路包括与读取晶体管相关联的至少一个光电二极管。光电二极管由包括掩埋层，浮置衬底层和上层的三个半导体层的堆叠形成。晶体管的漏极区域和/或源极区域被并入上层。掩埋层与上层电隔离，以便允许掩埋层独立于上层被偏置。

5. 发明授权

US07777289B2 Integrated photodiode of the floating substrate type 有权
标题翻译：浮动基板类型的集成光电二极管
公开(公告)号：US07777289B2
公开(公告)日：2010-08-17
申请号：US11432678
申请日：2006-05-10
申请人： François Roy , Arnaud Tournier
发明人： François Roy , Arnaud Tournier
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/1443
摘要： An integrated circuit includes at least one photodiode of the floating substrate type which is associated with a read transistor. The photodiode is formed from a buried layer lying beneath the floating substrate and an upper layer lying on the floating substrate. The upper layer incorporates the source and drain regions of the read transistor. The source and drain regions are produced on either side of the gate of the read transistor. An isolating trench is located alongside the source region and extends from the upper surface of the upper layer down to below the buried layer, so as to isolate the source region from said buried layer.
摘要翻译：集成电路包括与读取晶体管相关联的浮置衬底类型的至少一个光电二极管。光电二极管由位于浮置衬底之下的掩埋层和位于浮动衬底上的上层形成。上层结合读取晶体管的源极和漏极区域。源极和漏极区域在读取晶体管的栅极的任一侧上产生。隔离沟槽位于源极区旁边，并从上层的上表面向下延伸到掩埋层的下方，从而将源极区域与掩埋层隔离。

6. 发明授权

US08680453B2 Imaging device with charge collection zone and charge storage zone 有权
标题翻译：具有电荷收集区和电荷存储区的成像装置
公开(公告)号：US08680453B2
公开(公告)日：2014-03-25
申请号：US13183949
申请日：2011-07-15
申请人： François Roy
发明人： François Roy
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14612 , H01L27/14654
摘要： Imaging device comprising at least one photosite comprising a charge storage semiconductor zone, a charge collection semiconductor zone and transfer means designed to permit charge transfer between the charge storage zone and the charge collection zone, characterized in that the charge storage semiconductor zone comprises a lower semiconductor zone and a conduction channel buried beneath the upper surface of the photosite and connecting said lower semiconductor zone to the charge collection zone.
摘要翻译：成像装置包括至少一个光电子，其包括电荷存储半导体区，电荷收集半导体区和设计成允许电荷存储区与电荷收集区之间的电荷转移的转移装置，其特征在于，电荷存储半导体区包括下半导体区和导电通道，该导电通道掩埋在光子的上表面之下，并将所述下半导体区连接到电荷收集区。

7. 发明授权

US08669510B2 Imaging device in particular of the CMOS time delay and integration type 有权
标题翻译：成像设备特别是CMOS延时和集成型
公开(公告)号：US08669510B2
公开(公告)日：2014-03-11
申请号：US13240483
申请日：2011-09-22
申请人： François Roy
发明人： François Roy
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14806 , H04N5/3743
摘要： An imaging device may be formed in a semiconductor substrate including a matrix array of photosites extending in a first direction and a second direction. The imaging device may include a transfer module configured to transfer charge in the first direction and an extraction module configured to extract charge in the second direction.
摘要翻译：成像装置可以形成在包括在第一方向和第二方向上延伸的光电子的矩阵阵列的半导体衬底中。成像装置可以包括被配置为沿第一方向传送电荷的传送模块和被配置为在第二方向上提取电荷的提取模块。

8. 发明申请

US20120261670A1 BACK-SIDE ILLUMINATED IMAGE SENSOR WITH A JUNCTION INSULATION 有权
标题翻译：具有连接绝缘的背面照明图像传感器
公开(公告)号：US20120261670A1
公开(公告)日：2012-10-18
申请号：US13445199
申请日：2012-04-12
申请人： Michel Marty , François Roy , Jens Prima
发明人： Michel Marty , François Roy , Jens Prima
IPC分类号： H01L31/0368 , H01L31/20
CPC分类号： H01L27/1464 , H01L27/1463 , H01L27/14683 , H01L27/14687 , H01L27/14689
摘要： A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.
摘要翻译：一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸，进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。

9. 发明授权

US08053353B2 Method of making connections in a back-lit circuit 有权
标题翻译：在背光电路中进行连接的方法
公开(公告)号：US08053353B2
公开(公告)日：2011-11-08
申请号：US12431439
申请日：2009-04-28
申请人： François Roy
发明人： François Roy
IPC分类号： H01L21/4763
CPC分类号： H01L27/14689 , H01L21/76898 , H01L23/481 , H01L27/14636 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： A method for forming, on a surface of a thinned-down semiconductor substrate, a contact connected to a metal track of an interconnect stack formed on the opposite surface of the thinned-down substrate, including the steps of: forming, on the side of a first surface of a substrate, an insulating region penetrating into the substrate and coated with a conductive region and with an insulating layer crossed by conductive vias, the vias connecting a metal track of the interconnect stack to the conductive region; gluing the external surface of the interconnect stack on a support and thinning down the substrate; etching the external surface of the thinned-down substrate and stopping on the insulating region; etching the insulating region and stopping on the conductive region; and filling the etched opening with a metal.
摘要翻译：在薄型半导体衬底的表面上形成连接到形成在薄型衬底的相对表面上的互连叠层的金属轨道的接触的方法，包括以下步骤：在衬底的第一表面，穿透到衬底中并涂覆有导电区域并且具有由导电通孔交叉的绝缘层的绝缘区域，将互连叠层的金属轨道连接到导电区域的通孔; 将互连叠层的外表面胶合在支撑件上并使基板变薄; 蚀刻薄的衬底的外表面并停止在绝缘区上; 蚀刻绝缘区域并停止在导电区域上; 并用金属填充蚀刻开口。

10. 发明授权

US06858828B2 Photocell incorporating a lightguide and matrix composed of such photocells 有权
标题翻译：光电池结合了光导和由这种光电池组成的矩阵
公开(公告)号：US06858828B2
公开(公告)日：2005-02-22
申请号：US10246804
申请日：2002-09-18
申请人： François Roy , Thierry Devoivre , Yann Marcellier
发明人： François Roy , Thierry Devoivre , Yann Marcellier
IPC分类号： H01L27/146 , H01L27/00
CPC分类号： H01L27/14609 , H01L27/14621 , H01L27/14627
摘要： A photocell having an entry face for the light and a photosensitive element, as well as to a matrix composed of such photocells. A lightguide-forming element placed between the entry face and the photosensitive element of the photocell ensures optical coupling between the latter two components. It makes it possible to place on either side of the photosensitive element electronic components for reading and for controlling the photocell, while reducing the loss of light incident on the entry face corresponding to the rays which would strike these electronic components. This lightguide-forming element is composed of at least three dielectric materials having different respective optical refractive indices and placed within concentric volumes.
摘要翻译：具有用于光的入射面和感光元件的光电管，以及由这种光电池组成的矩阵。放置在光电元件的入射面和感光元件之间的光导形成元件确保后两个部件之间的光耦合。它可以放置在用于读取和控制光电元件的感光元件电子部件的两侧，同时减少入射到入射面上的光的损失，该入射面对应于将撞击这些电子部件的光线。该光导形成元件由具有不同相应光折射率的至少三个电介质材料组成并且被放置在同心体积内。

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