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1. 发明授权

US07531875B2 Lateral SOI semiconductor device 有权
标题翻译：横向SOI半导体器件
公开(公告)号：US07531875B2
公开(公告)日：2009-05-12
申请号：US10556927
申请日：2003-05-13
申请人： Florin Udrea , David Garner
发明人： Florin Udrea , David Garner
IPC分类号： H01L29/94
CPC分类号： H01L29/7824 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/7394 , H01L29/8086 , H01L29/861
摘要： This invention is generally concerned with semiconductor-on-insulator devices, particularly for high voltage applications. A lateral semiconductor-on-insulator device is described, comprising: a semiconductor substrate; an insulating layer on said semiconductor substrate; and a lateral semiconductor device on said insulator; said lateral semiconductor device having: a first region of a first conductivity type; a second region of a second conductivity type laterally spaced apart from said first region; and a drift region extending in a lateral direction between said first region and said second region; and wherein said drift region comprises at least one first zone and at least one second zone adjacent a said first zone, a said first zone having said second conductivity type, a said second zone being an insulating zone, a said first zone being tapered to narrow towards said first region.
摘要翻译：本发明通常涉及绝缘体上半导体器件，特别是对于高电压应用。描述了一种绝缘体侧向半导体器件，包括：半导体衬底; 在所述半导体衬底上的绝缘层; 和在所述绝缘体上的横向半导体器件; 所述横向半导体器件具有：第一导电类型的第一区域; 与所述第一区域横向间隔开的第二导电类型的第二区域; 以及在所述第一区域和所述第二区域之间沿横向方向延伸的漂移区域; 并且其中所述漂移区包括至少一个第一区和邻近所述第一区的至少一个第二区，具有所述第二导电类型的所述第一区，所述第二区是绝缘区，所述第一区逐渐缩窄朝向第一个地区。

2. 发明申请

US20070120187A1 Lateral soi semiconductor device 有权
标题翻译：侧面半导体器件
公开(公告)号：US20070120187A1
公开(公告)日：2007-05-31
申请号：US10556927
申请日：2003-05-13
申请人： Florin Udrea , David Garner
发明人： Florin Udrea , David Garner
IPC分类号： H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/7824 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/7394 , H01L29/8086 , H01L29/861
摘要： This invention is generally concerned with semiconductor-on-insulator devices, particularly for high voltage applications. A lateral semiconductor-on-insulator device is described, comprising: a semiconductor substrate; an insulating layer on said semiconductor substrate; and a lateral semiconductor device on said insulator; said lateral semiconductor device having: a first region of a first conductivity type; a second region of a second conductivity type laterally spaced apart from said first region; and a drift region extending in a lateral direction between said first region and said second region; and wherein said drift region comprises at least one first zone and at least one second zone adjacent a said first zone, a said first zone having said second conductivity type, a said second zone being an insulating zone, a said first zone being tapered to narrow towards said first region.
摘要翻译：本发明通常涉及绝缘体上半导体器件，特别是对于高电压应用。描述了一种绝缘体侧向半导体器件，包括：半导体衬底; 在所述半导体衬底上的绝缘层; 和在所述绝缘体上的横向半导体器件; 所述横向半导体器件具有：第一导电类型的第一区域; 与所述第一区域横向间隔开的第二导电类型的第二区域; 以及在所述第一区域和所述第二区域之间沿横向方向延伸的漂移区域; 并且其中所述漂移区包括至少一个第一区和邻近所述第一区的至少一个第二区，具有所述第二导电类型的所述第一区，所述第二区是绝缘区，所述第一区逐渐缩窄朝向第一个地区。

3. 发明授权

US08970016B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08970016B2
公开(公告)日：2015-03-03
申请号：US13486614
申请日：2012-06-01
申请人： Marina Antoniou , Florin Udrea , Elizabeth Kho Ching Tee , Steven John Pilkington , Deb Kumar Pal , Alexander Dietrich Hölke
发明人： Marina Antoniou , Florin Udrea , Elizabeth Kho Ching Tee , Steven John Pilkington , Deb Kumar Pal , Alexander Dietrich Hölke
IPC分类号： H01L29/02
CPC分类号： H01L29/402 , H01L21/761 , H01L29/0634 , H01L29/0692 , H01L29/404 , H01L29/7823 , H01L29/861
摘要： A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure.
摘要翻译：一种包括p或p +掺杂部分和通过半导体漂移部分从p或p +掺杂部分分离的n或n +掺杂部分的半导体器件。该装置还包括邻近漂移部分设置的至少一个终端部分。所述至少一个终端部分包括超结结构。

4. 发明授权

US08410560B2 Electromigration reduction in micro-hotplates 有权
标题翻译：微电镀减少电镀
公开(公告)号：US08410560B2
公开(公告)日：2013-04-02
申请号：US12691104
申请日：2010-01-21
申请人： Syed Zeeshan Ali , Florin Udrea , Julian William Gardner
发明人： Syed Zeeshan Ali , Florin Udrea , Julian William Gardner
IPC分类号： H01L27/14 , H01L21/00
CPC分类号： H05B3/267 , Y10T29/49083
摘要： A micro-hotplate is provided in the form of a device comprising a sensor and one or more resistive heaters within the micro-hotplate arranged to heat the sensor. Furthermore a controller is provided for applying a bidirectional drive current to at least one of the heaters to reduce electromigration. The controller also serves to drive the heater at a substantially constant temperature.
摘要翻译：提供微电子装置的形式包括传感器和微电热板内的一个或多个电阻加热器，其布置成加热传感器。此外，提供了一种控制器，用于向至少一个加热器施加双向驱动电流以减少电迁移。控制器还用于以基本恒定的温度驱动加热器。

5. 发明授权

US07994569B2 Semiconductor device and method for forming the same 有权
标题翻译：半导体装置及其形成方法
公开(公告)号：US07994569B2
公开(公告)日：2011-08-09
申请号：US12186966
申请日：2008-08-06
申请人： Florin Udrea , Chih-Wei Hsu
发明人： Florin Udrea , Chih-Wei Hsu
IPC分类号： H01L29/76
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/66348
摘要： A bipolar high voltage/power semiconductor device having a low voltage terminal and a high voltage terminal is disclosed. The bipolar high voltage/power semiconductor is a vertical insulated gate bipolar transistor with injection efficiency adjustment formed by highly doped n+ islands in a p+ anode layer. The device has a vertical drift region of a first conductivity type and having vertical first and second ends. In one example, a region of the second conductivity type is provided at the second end of the vertical drift region connected directly to the vertical high voltage terminal. In another example, a vertical buffer region of the first conductivity type is provided at the vertical second end of the vertical drift region and a vertical region of a second conductivity type is provided on the other side of the vertical buffer region and connected to the vertical high voltage terminal. A plurality of electrically floating lateral island regions are provided within the vertical drift region at or towards the vertical second end of the vertical drift region, the plurality of electrically floating lateral island regions being of the first conductivity type and being more highly doped than the drift region.
摘要翻译：公开了一种具有低电压端子和高电压端子的双极型高压/功率半导体器件。双极性高压/功率半导体是垂直绝缘栅双极晶体管，其具有由p +阳极层中的高掺杂n +岛形成的注入效率调节。该器件具有第一导电类型的垂直漂移区，并具有垂直的第一和第二端。在一个示例中，第二导电类型的区域设置在直接连接到垂直高压端子的垂直漂移区域的第二端。在另一示例中，第一导电类型的垂直缓冲区域设置在垂直漂移区域的垂直第二端，并且第二导电类型的垂直区域设置在垂直缓冲区域的另一侧并连接到垂直方向高压端子。多个电浮动横向岛区域设置在垂直漂移区域内或垂直于垂直漂移区域的垂直第二端处，多个电浮动横向岛区域是第一导电类型并且比漂移更高的掺杂地区。

6. 发明授权

US07691694B2 Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same 有权
标题翻译：具有结场效应晶体管的碳化硅半导体器件及其制造方法
公开(公告)号：US07691694B2
公开(公告)日：2010-04-06
申请号：US11785276
申请日：2007-04-17
申请人： Rajesh Kumar , Andrei Mihaila , Florin Udrea
发明人： Rajesh Kumar , Andrei Mihaila , Florin Udrea
IPC分类号： H01L21/337
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/8083 , Y10S438/931
摘要： A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the substrate; a first source layer connecting to the first channel layer electrically; a second gate layer adjacent to the first channel layer to sandwich the first channel layer; a second channel layer adjacent to the second gate layer to sandwich the second gate layer; a third gate layer adjacent to the second channel layer to sandwich the second channel layer; and a second source layer connecting to the second channel layer electrically.
摘要翻译：碳化硅半导体器件包括衬底和结场效应晶体管。晶体管包括：设置在基板上的第一半导体层; 设置在所述第一半导体层的表面上的第一栅极层; 与所述基板上的所述第一栅极层相邻的第一沟道层; 电连接到第一沟道层的第一源极层; 与所述第一沟道层相邻以夹住所述第一沟道层的第二栅极层; 与所述第二栅极层相邻以夹住所述第二栅极层的第二沟道层; 与所述第二沟道层相邻以夹住所述第二沟道层的第三栅极层; 以及电连接到第二沟道层的第二源极层。

7. 发明授权

US07605446B2 Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation 失效
标题翻译：具有第一和第二绝缘门控的双极高压/功率半导体器件和操作方法
公开(公告)号：US07605446B2
公开(公告)日：2009-10-20
申请号：US11486377
申请日：2006-07-14
申请人： Florin Udrea , Nishad Udugampola , Gehan A. J. Amaratunga
发明人： Florin Udrea , Nishad Udugampola , Gehan A. J. Amaratunga
IPC分类号： H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L23/58
CPC分类号： H01L29/7393 , H01L29/0657 , H01L29/0696 , H01L29/4232 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A bipolar high voltage/power semiconductor device has a drift region having adjacent its ends regions of different conductivity types respectively. High and low voltage terminals are provided. A first insulated gate terminal and a second insulated gate terminal are also provided. One or more drive circuits provide appropriate voltages to the first and second insulated gate terminals so as to allow current conduction in a first direction or in a second direction that is opposite the first direction.
摘要翻译：双极高压/功率半导体器件具有分别具有与其不同导电类型的端部区域相邻的漂移区域。提供高低压端子。还提供了第一绝缘栅极端子和第二绝缘栅极端子。一个或多个驱动电路为第一和第二绝缘栅极端子提供适当的电压，以允许在与第一方向相反的第一方向或第二方向上的电流传导。

8. 发明授权

US07589379B2 Power semiconductor and method of fabrication 有权
标题翻译：功率半导体和制造方法
公开(公告)号：US07589379B2
公开(公告)日：2009-09-15
申请号：US10936721
申请日：2004-09-09
申请人： Gehan Anil Joseph Amaratunga , Florin Udrea
发明人： Gehan Anil Joseph Amaratunga , Florin Udrea
IPC分类号： H01L29/72
CPC分类号： H01L29/7824 , H01L21/84 , H01L27/1203 , H01L29/41725 , H01L29/4175 , H01L29/42368 , H01L29/78603 , H01L29/78624
摘要： This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and methods for their fabrication.A power semiconductor, the semiconductor comprising: a power device, said power device having first and second electrical contact regions and a drift region extending therebetween; and a semiconductor substrate mounting said device; and wherein said power semiconductor includes an electrically insulating layer between said semiconductor substrate and said power device, said electrically insulating layer having a thickness of at least 5 μm.
摘要翻译：本发明一般涉及诸如功率MOS晶体管，双极晶体管（IGBT）的绝缘栅极，高压二极管等功率半导体及其制造方法。功率半导体，所述半导体包括：功率器件，所述功率器件具有第一和第二电接触区域和在其间延伸的漂移区域; 以及安装所述装置的半导体衬底; 并且其中所述功率半导体在所述半导体衬底和所述功率器件之间包括电绝缘层，所述电绝缘层具有至少5μm的厚度。

9. 发明申请

US20090008674A1 DOUBLE GATE INSULATED GATE BIPOLAR TRANSISTOR 有权
标题翻译：双门绝缘门双极晶体管
公开(公告)号：US20090008674A1
公开(公告)日：2009-01-08
申请号：US11863231
申请日：2007-09-27
申请人： Florin Udrea
发明人： Florin Udrea
IPC分类号： H01L29/745 , H01L21/331
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/4232 , H01L29/66348 , H01L29/7396
摘要： Double gate IGBT having both gates referred to a cathode in which a second gate is for controlling flow of hole current. In on-state, hole current can be largely suppressed. While during switching, hole current is allowed to flow through a second channel. Incorporating a depletion-mode p-channel MOSFET having a pre-formed hole channel that is turned ON when 0V or positive voltages below a specified threshold voltage are applied between second gate and cathode, negative voltages to the gate of p-channel are not used. Providing active control of holes amount that is collected in on-state by lowering base transport factor through increasing doping and width of n well or by reducing injection efficiency through decreasing doping of deep p well. Device includes at least anode, cathode, semiconductor substrate, n− drift region, first & second gates, n+ cathode region; p+ cathode short, deep p well, n well, and pre-formed hole channel.
摘要翻译：具有两个栅极的双栅极IGBT指的是其中第二栅极用于控制空穴电流的阴极。在导通状态下，可以大大抑制空穴电流。在切换期间，允许空穴电流流过第二通道。结合具有预形成的空穴通道的耗尽型p沟道MOSFET，当0V或者低于特定阈值电压的正电压被施加在第二栅极和阴极之间时，其导通的电压不被用于p沟道栅极的负电压。通过增加n阱的掺杂和宽度降低碱运输因子，或者通过减少深阱的掺杂降低注入效率，提供通过积极收集的空穴量的主动控制。器件至少包括阳极，阴极，半导体衬底，n-漂移区，第一和第二栅极，n +阴极区域; p +阴极短，深p阱，n阱和预形成的孔道。

10. 发明授权

US07465964B2 Semiconductor device in which an injector region is isolated from a substrate 有权
标题翻译：注射器区域与衬底隔离的半导体器件
公开(公告)号：US07465964B2
公开(公告)日：2008-12-16
申请号：US11321051
申请日：2005-12-30
申请人： Florin Udrea
发明人： Florin Udrea
IPC分类号： H01L29/735
CPC分类号： H01L29/7394 , H01L29/0834 , H01L29/0847 , H01L29/402
摘要： A high voltage/power semiconductor device has a substrate, an insulating layer on the substrate, and a semiconductor layer on the insulating layer. Low and high voltage terminals are connected to the semiconductor layer. The device has a control terminal. The semiconductor layer includes a drift region and a relatively highly doped injector region between the drift region and the high voltage terminal. The device has a relatively highly doped region in electrical contact with the highly doped injector region and the high voltage terminal and forming a semiconductor junction with the substrate. The combination of the insulating layer and the relatively highly doped region of the first conductivity type effectively isolate the highly doped injector region from the substrate.
摘要翻译：高电压/功率半导体器件具有衬底，衬底上的绝缘层和绝缘层上的半导体层。低压端子和高压端子连接到半导体层。该设备具有控制终端。半导体层包括位于漂移区和高电压端之间的漂移区和相对高掺杂的注入区。该器件具有与高度掺杂的注入器区域和高电压端子电接触的相对高掺杂的区域，并与衬底形成半导体结。绝缘层和第一导电类型的相对高掺杂区域的组合有效地将高度掺杂的注入器区域与衬底隔离。

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