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1. 发明申请

US20110174799A1 MICRO-HOTPLATES 有权
公开(公告)号：US20110174799A1
公开(公告)日：2011-07-21
申请号：US12691104
申请日：2010-01-21
申请人： Syed Zeeshan ALI , Florin Udrea , Julian William Gardner
发明人： Syed Zeeshan ALI , Florin Udrea , Julian William Gardner
IPC分类号： H05B3/68 , H01L21/3065 , H01L21/306
CPC分类号： H05B3/267 , Y10T29/49083
摘要： A micro-hotplate is provided in the form of a device comprising a sensor and one or more resistive heaters within the micro-hotplate arranged to heat the sensor. Furthermore a controller is provided for applying a bidirectional drive current to at least one of the heaters to reduce electromigration. The controller also serves to drive the heater at a substantially constant temperature. Such an arrangement is advantageous over an arrangement in which a unidirectional DC drive current is applied to the heater. This is because the unidirectional drive current causes electromigration which results in an increase in resistance over time. This is undesirable because it can lead to failure of the micro-hotplate. In contrast, the application of the bidirectional current reduces electromigration and as a result there is insignificant change in the resistance of the heater over time and under high temperature. This in turn improves the reliability of the micro-hotplate and therefore helps to improve the lifetime of the sensor
摘要翻译：提供微电子装置的形式包括传感器和微电热板内的一个或多个电阻加热器，其布置成加热传感器。此外，提供了一种控制器，用于向至少一个加热器施加双向驱动电流以减少电迁移。控制器还用于以基本恒定的温度驱动加热器。这种布置对于将单向DC驱动电流施加到加热器的布置是有利的。这是因为单向驱动电流导致电迁移，导致电阻随时间的增加。这是不希望的，因为它可能导致微电热板的故障。相比之下，双向电流的应用减少了电迁移，结果是随着时间的推移和高温下电阻的电阻变化不大。这又提高了微型电热板的可靠性，因此有助于提高传感器的使用寿命

2. 发明授权

US08410560B2 Electromigration reduction in micro-hotplates 有权
标题翻译：微电镀减少电镀
公开(公告)号：US08410560B2
公开(公告)日：2013-04-02
申请号：US12691104
申请日：2010-01-21
申请人： Syed Zeeshan Ali , Florin Udrea , Julian William Gardner
发明人： Syed Zeeshan Ali , Florin Udrea , Julian William Gardner
IPC分类号： H01L27/14 , H01L21/00
CPC分类号： H05B3/267 , Y10T29/49083
摘要： A micro-hotplate is provided in the form of a device comprising a sensor and one or more resistive heaters within the micro-hotplate arranged to heat the sensor. Furthermore a controller is provided for applying a bidirectional drive current to at least one of the heaters to reduce electromigration. The controller also serves to drive the heater at a substantially constant temperature.
摘要翻译：提供微电子装置的形式包括传感器和微电热板内的一个或多个电阻加热器，其布置成加热传感器。此外，提供了一种控制器，用于向至少一个加热器施加双向驱动电流以减少电迁移。控制器还用于以基本恒定的温度驱动加热器。

3. 发明授权

US07849727B2 Gas-sensing semiconductor devices 有权
标题翻译：气敏半导体器件
公开(公告)号：US07849727B2
公开(公告)日：2010-12-14
申请号：US12065296
申请日：2006-07-12
申请人： Julian William Gardner , Florin Udrea , Takao Iwaki , James Anthony Covington
发明人： Julian William Gardner , Florin Udrea , Takao Iwaki , James Anthony Covington
IPC分类号： G01N7/00
CPC分类号： G01N33/0047 , G01N27/14 , G01N33/0031
摘要： A gas-sensing semiconductor device 1′ is fabricated on a silicon substrate 2′ having a thin silicon dioxide insulating layer 3′ in which a resistive heater 6 made of doped single crystal silicon formed simultaneously with source and drain regions of CMOS circuitry is embedded. The device 1′ includes a sensing area provided with a gas-sensitive layer 9′ separated from the heater 6′ by an insulating layer 4′. As one of the final fabrication steps, the substrate 2′ is back-etched so as to form a thin membrane in the sensing area. The heater 6′ has a generally circular-shaped structure surrounding a heat spreading plate 16′, and consists of two sets 20′, 21′ of meandering resistors having arcuate portions nested within one another and interconnected in labyrinthine form. The fabrication of the heater at the same time as the source and drain regions of CMOS circuitry is particularly advantageous in that the gas-sensing semiconductor device is produced without requiring any fabrication steps in addition to those already employed in the IC processing apart from a post-CMOS back etch and deposition of the gas-sensitive layer. The circular design is advantageous in that it is the best solution to minimise the size of the membrane at fixed power loss and heated area.
摘要翻译：在具有薄的二氧化硅绝缘层3'的硅衬底2'上制造气体感测半导体器件1'，其中嵌入与CMOS电路的源极和漏极区域同时形成的由掺杂单晶硅制成的电阻加热器6。装置1'包括具有通过绝缘层4'与加热器6'分离的气敏层9'的感测区域。作为最终制造步骤之一，衬底2'被反蚀刻以在感测区域中形成薄膜。加热器6'具有围绕散热板16'的大致圆形结构，并且由具有彼此嵌套并且以迷宫形式互连的弓形部分的曲折电阻器的两组20'，21'组成。与CMOS电路的源极和漏极区域同时地制造加热器是特别有利的，因为除了在后处理中已经用于IC处理中的那些之外，制造气体感测半导体器件不需要任何制造步骤 -CMOS背蚀刻和气敏层的沉积。圆形设计是有利的，因为它是在固定功率损耗和加热面积下最小化膜尺寸的最佳解决方案。

4. 发明申请

US20090126460A1 Gas-Sensing Semiconductor Devices 有权
标题翻译：气体传感半导体器件
公开(公告)号：US20090126460A1
公开(公告)日：2009-05-21
申请号：US12065296
申请日：2006-07-12
申请人： Julian William Gardner , Florin Udrea , Takao Iwaki , James Anthony Covington
发明人： Julian William Gardner , Florin Udrea , Takao Iwaki , James Anthony Covington
IPC分类号： G01N7/00 , H01L29/78
CPC分类号： G01N33/0047 , G01N27/14 , G01N33/0031
摘要： A gas-sensing semiconductor device 1′ is fabricated on a silicon substrate 2′ having a thin silicon dioxide insulating layer 3′ in which a resistive heater 6 made of doped single crystal silicon formed simultaneously with source and drain regions of CMOS circuitry is embedded. The device 1′ includes a sensing area provided with a gas-sensitive layer 9′ separated from the heater 6′ by an insulating layer 4′. As one of the final fabrication steps, the substrate 2′ is back-etched so as to form a thin membrane in the sensing area. The heater 6′ has a generally circular-shaped structure surrounding a heat spreading plate 16′, and consists of two sets 20′, 21′ of meandering resistors having arcuate portions nested within one another and interconnected in labyrinthine form. The fabrication of the heater at the same time as the source and drain regions of CMOS circuitry is particularly advantageous in that the gas-sensing semiconductor device is produced without requiring any fabrication steps in addition to those already employed in the IC processing apart from a post-CMOS back etch and deposition of the gas-sensitive layer. The circular design is advantageous in that it is the best solution to minimise the size of the membrane at fixed power loss and heated area.
摘要翻译：在具有薄的二氧化硅绝缘层3'的硅衬底2'上制造气体感测半导体器件1'，其中嵌入与CMOS电路的源极和漏极区域同时形成的由掺杂单晶硅制成的电阻加热器6。装置1'包括具有通过绝缘层4'与加热器6'分离的气敏层9'的感测区域。作为最终制造步骤之一，衬底2'被反蚀刻以在感测区域中形成薄膜。加热器6'具有围绕散热板16'的大致圆形结构，并且由具有彼此嵌套并且以迷宫形式互连的弓形部分的曲折电阻器的两组20'，21'组成。与CMOS电路的源极和漏极区域同时地制造加热器是特别有利的，因为除了在后处理中已经用于IC处理中的那些之外，制造气体感测半导体器件不需要任何制造步骤 -CMOS背蚀刻和气敏层的沉积。圆形设计是有利的，因为它是在固定功率损耗和加热面积下最小化膜尺寸的最佳解决方案。

5. 发明授权

US07495300B2 Gas-sensing semiconductor devices 有权
标题翻译：气敏半导体器件
公开(公告)号：US07495300B2
公开(公告)日：2009-02-24
申请号：US11092654
申请日：2005-03-30
申请人： Julian William Gardner , James Anthony Covington , Florin Udrea
发明人： Julian William Gardner , James Anthony Covington , Florin Udrea
IPC分类号： H01L29/78
CPC分类号： G01N27/128
摘要： A gas-sensing semiconductor device is fabricated on a silicon substrate having a thin silicon oxide insulating layer in which a resistive heater made of a CMOS compatible high temperature metal is embedded. The high temperature metal is tungsten. The device includes at least one sensing area provided with a gas-sensitive layer separated from the heater by an insulating layer. As one of the final fabrication steps, the substrate is back-etched so as to form a thin membrane in the sensing area. Except for the back-etch and the gas-sensitive layer formation, that are carried out post-CMOS, all other layers, including the tungsten resistive heater, are made using a CMOS process employing tungsten metallisation. The device can be monolithically integrated with the drive, control and transducing circuitry using low cost CMOS processing. The heater, the insulating layer and other layers are made within the CMOS sequence and they do not require extra masks or processing.
摘要翻译：气体感测半导体器件制造在具有薄的氧化硅绝缘层的硅衬底上，其中嵌入由CMOS兼容的高温金属制成的电阻加热器。高温金属是钨。该装置包括设置有通过绝缘层与加热器分离的气敏层的至少一个感测区域。作为最终制造步骤之一，衬底被反蚀刻以在感测区域中形成薄膜。除了在CMOS之后执行的背蚀刻和气敏层形成之外，包括钨电阻加热器在内的所有其它层均采用采用钨金属化的CMOS工艺制成。该器件可以使用低成本CMOS处理与驱动器，控制和转换电路单片集成。加热器，绝缘层和其他层是在CMOS序列内制成的，它们不需要额外的掩模或处理。

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