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1. 发明申请

US20140027909A1 METALLIZATION OF FLUOROCARBON-BASED DIELECTRIC FOR INTERCONNECTS 有权
标题翻译：用于互连的基于氟化物的电介质的金属化
公开(公告)号：US20140027909A1
公开(公告)日：2014-01-30
申请号：US13560936
申请日：2012-07-27
申请人： Florian Gstrein , David J. Michalak
发明人： Florian Gstrein , David J. Michalak
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/0212 , G06F1/16 , H01L21/02274 , H01L21/02282 , H01L21/3212 , H01L21/52 , H01L21/76802 , H01L21/76829 , H01L21/76879 , H01L23/5226 , H01L23/53209 , H01L23/53238 , H01L23/53242 , H01L23/53257 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the present disclosure are directed towards metallization of a fluorocarbon-based dielectric material for interconnect applications. In one embodiment, an apparatus includes a semiconductor substrate, a device layer disposed on the semiconductor substrate, the device layer including one or more transistor devices, and an interconnect layer disposed on the device layer, the interconnect layer comprising a fluorocarbon-based dielectric material, where x represents a stoichiometric quantity of fluorine relative to carbon in the dielectric material, and one or more interconnect structures configured to route electrical signals to or from the one or more transistor devices, the one or more interconnect structures comprising cobalt (Co), or ruthenium (Ru), or combinations thereof. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例涉及用于互连应用的基于碳氟化合物的介电材料的金属化。在一个实施例中，一种设备包括半导体衬底，设置在半导体衬底上的器件层，器件层包括一个或多个晶体管器件，以及布置在器件层上的互连层，该互连层包括氟碳基电介质材料，其中x表示相对于介电材料中的碳的化学计量的氟，以及一个或多个互连结构，其配置成将电信号传递到一个或多个晶体管器件或从一个或多个晶体管器件引出，所述一个或多个互连结构包括钴（Co）或钌（Ru）或其组合。可以描述和/或要求保护其他实施例。

2. 发明申请

US20140034906A1 CARBON NANOTUBE SEMICONDUCTOR DEVICES AND DETERMINISTIC NANOFABRICATION METHODS 有权
标题翻译：碳纳米管半导体器件和测定纳米方法
公开(公告)号：US20140034906A1
公开(公告)日：2014-02-06
申请号：US13977219
申请日：2011-12-27
申请人： Lawrence D. Wong , Scott B. Clendenning , David J. Michalak
发明人： Lawrence D. Wong , Scott B. Clendenning , David J. Michalak
IPC分类号： H01L51/00 , H01L51/05
CPC分类号： H01L51/0048 , B82B3/0047 , H01L21/845 , H01L27/1211 , H01L51/0002 , H01L51/0558
摘要： Embodiments of the invention provide transistor structures and interconnect structures that employ carbon nanotubes (CNTs). Further embodiments of the invention provide methods of fabricating transistor structures and interconnect structures that employ carbon nanotubes. Deterministic nanofabrication techniques according to embodiments of the invention can provide efficient routes for the large-scale manufacture of transistor and interconnect structures for use, for example, in random logic and memory circuit applications.
摘要翻译：本发明的实施例提供采用碳纳米管（CNT）的晶体管结构和互连结构。本发明的其他实施例提供制造使用碳纳米管的晶体管结构和互连结构的方法。根据本发明的实施例的确定性纳米制造技术可以提供用于大规模制造用于例如随机逻辑和存储器电路应用的晶体管和互连结构的有效途径。

3. 发明授权

US07994783B2 Integrated microchip incorporating atomic magnetometer and microfluidic channel for NMR and MRI 有权
标题翻译：集成微芯片结合原子磁强计和微流体通道用于NMR和MRI
公开(公告)号：US07994783B2
公开(公告)日：2011-08-09
申请号：US12367292
申请日：2009-02-06
申请人： Micah P. Ledbetter , Igor M. Savukov , Dmitry Budker , Vishal K. Shah , Svenja Knappe , John Kitching , David J. Michalak , Shoujun Xu , Alexander Pines
发明人： Micah P. Ledbetter , Igor M. Savukov , Dmitry Budker , Vishal K. Shah , Svenja Knappe , John Kitching , David J. Michalak , Shoujun Xu , Alexander Pines
IPC分类号： G01V3/00
CPC分类号： G01R33/26 , G01R33/282
摘要： An integral microfluidic device includes an alkali vapor cell and microfluidic channel, which can be used to detect magnetism for nuclear magnetic resonance (NMR) and magnetic resonance imaging (MRI). Small magnetic fields in the vicinity of the vapor cell can be measured by optically polarizing and probing the spin precession in the small magnetic field. This can then be used to detect the magnetic field of in encoded analyte in the adjacent microfluidic channel. The magnetism in the microfluidic channel can be modulated by applying an appropriate series of radio or audio frequency pulses upstream from the microfluidic chip (the remote detection modality) to yield a sensitive means of detecting NMR and MRI.
摘要翻译：一体化的微流体装置包括碱蒸汽池和微流体通道，其可用于检测核磁共振（NMR）和磁共振成像（MRI）的磁性。可以通过光学偏振和探测小磁场中的自旋进动来测量蒸气室附近的小磁场。这可以用于检测相邻微流体通道中的编码分析物中的磁场。通过在微流体芯片（远程检测模式）上游应用适当的无线电或音频脉冲序列来调节微流体通道中的磁性，以产生检测NMR和MRI的敏感手段。

4. 发明申请

US20180236440A1 ACTIVATION OF PROTECTED CROSS-LINKING CATALYSTS DURING FORMATION OF DIELECTRIC MATERIALS 审中-公开
公开(公告)号：US20180236440A1
公开(公告)日：2018-08-23
申请号：US15772839
申请日：2015-12-04
申请人： Jeffery D. BIELEFELD , James M. BLACKWELL , David J. MICHALAK , Jessica M. TORRES , Marie KRYSAK , Intel Corporation
发明人： James M. BLACKWELL , David J. Michalak , Jessica M. Torres , Marie KRYSAK , Jeffery D. Bielefeld
IPC分类号： B01J37/08 , B01J31/02 , B01J21/02 , C08L83/16 , C08J3/24 , H01B3/46
CPC分类号： B01J37/08 , B01J21/02 , B01J31/0284 , C08J3/245 , C08L83/16 , H01B3/22 , H01B3/46
摘要： Catalysts for facilitating cross-linking of liquid precursors into solid dielectric materials are disclosed. Initially, catalysts are protected, either by coordination with other compounds or by conversion to an ionic salt. Protection prevents catalysts from facilitating cross-linking unless activated. A catalyst is activated upon receiving an excitation, e.g. thermal excitation by heating. Upon receiving an excitation, protection of a catalyst dissociates, decomposes, becomes neutralized, or is otherwise transformed to allow the catalyst to facilitate cross-linking of the precursors into solid dielectric materials. Methods for fabricating dielectric materials using such protected catalysts as well as devices comprising the resulting materials are also described. Dielectric materials comprising cross-linked cyclic carbosilane units having a ring structure including C and Si may be formed in this manner. Protected catalysts disclosed herein allow careful control of precursor cross-linking, resulting in higher quality dielectric materials that may be formed by coating techniques.

5. 发明申请

US20140004358A1 LOW K CARBOSILANE FILMS 审中-公开
标题翻译：低K碳化硅薄膜
公开(公告)号：US20140004358A1
公开(公告)日：2014-01-02
申请号：US13535993
申请日：2012-06-28
申请人： James M. Blackwell , David J. Michalak
发明人： James M. Blackwell , David J. Michalak
IPC分类号： C09D183/02 , B05D3/06 , B05D3/00
CPC分类号： C09D183/02 , B05D3/007 , B05D3/067 , C08G77/60 , C09D183/14 , C09D183/16 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02214 , H01L21/02282 , Y10T428/31663
摘要： Low k dielectric films/layers can be produced by cross-linking oligomers made from cyclic carbosilane monomers. The films may exhibit high porosity and strong resistance to chemical attack while also exhibiting improved hydrophobicity. Oligomers may be cross-linked in situ after coating on a substrate such as a silicon wafer. Resulting cross-linked layers may be further treated to improve chemical resistance and reduce water uptake.
摘要翻译：低k电介质膜/层可以通过交联由环状碳硅烷单体制成的低聚物来制备。该膜可能表现出高孔隙率和对化学侵蚀的强抗性，同时也表现出改善的疏水性。低聚物可以在涂覆在诸如硅晶片的基材上之后原位交联。可以进一步处理所得的交联层以改善耐化学性并减少吸水。

6. 发明申请

US20130320520A1 CHEMICALLY ALTERED CARBOSILANES FOR PORE SEALING APPLICATIONS 有权
标题翻译：用于密封应用的化学改性碳化硅
公开(公告)号：US20130320520A1
公开(公告)日：2013-12-05
申请号：US13995905
申请日：2011-12-22
申请人： David J. Michalak , James M. Blakwell , Jeffery D. Bielefeld , James S. Clarke
发明人： David J. Michalak , James M. Blakwell , Jeffery D. Bielefeld , James S. Clarke
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L23/485 , H01L21/02203 , H01L21/02343 , H01L21/02359 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76831 , H01L2924/0002 , H01L2924/00
摘要： A method including forming a dielectric material including a surface porosity on a circuit substrate including a plurality of devices; chemically modifying a portion of the surface of the dielectric material with a first reactant; reacting the chemically modified portion of the surface with a molecule that, once reacted, will be thermally stable; and forming a film including the molecule. An apparatus including a circuit substrate including a plurality of devices; a plurality of interconnect lines disposed in a plurality of layers coupled to the plurality of devices; and a plurality of dielectric layers disposed between the plurality of interconnect lines, wherein at least one of the dielectric layers comprises a porous material surface relative to the plurality of devices and the surface comprises a pore obstructing material.
摘要翻译：一种包括在包括多个器件的电路基板上形成包括表面孔隙率的介电材料的方法; 用第一反应物化学改性电介质材料表面的一部分; 使表面的化学改性部分与一旦反应后将是热稳定的分子反应; 并形成包含该分子的膜。一种装置，包括：包括多个装置的电路基板; 布置在耦合到所述多个装置的多个层中的多个互连线; 以及设置在所述多个互连线之间的多个电介质层，其中所述电介质层中的至少一个相对于所述多个器件包括多孔材料表面，并且所述表面包括孔阻塞材料。

7. 发明授权

US4947420A Communication system 失效
标题翻译：通讯系统
公开(公告)号：US4947420A
公开(公告)日：1990-08-07
申请号：US345056
申请日：1989-04-28
申请人： John I. Stahl , David J. Michalak , Klaus Knapp
发明人： John I. Stahl , David J. Michalak , Klaus Knapp
IPC分类号： H04W68/00 , H04W88/18
CPC分类号： H04W88/185 , H04W68/00
摘要： A selective call communication system for use by an untrained person is provided. The communication system includes a number of telephones located in different locations, connected to a central switching unit. A number of selective call radios, each having an address, are assigned to the central switching unit. Upon the use of the telephone, the central unit identifies the telephone in use, and initiates an alerting call to the corresponding selective call radio automatically. The selective call radios may be pagers or two-way radios. Other features such as radio to radio communication, and radio to telephone network communication may be incorporated into the system.
摘要翻译：提供了由未经训练的人使用的选择性呼叫通信系统。通信系统包括位于不同位置的多个电话，连接到中央交换单元。每个具有地址的多个选呼接收机被分配给中央交换单元。在使用电话时，中央单元识别正在使用的电话，并且自动发起对相应的选呼接收机的告警呼叫。选择性呼叫无线电可以是寻呼机或双向无线电。诸如无线电到无线电通信和无线电到电话网络通信的其他特征可以被并入到系统中。

8. 发明申请

US20150171029A1 INVERSE NANOSTRUCTURE DIELECTRIC LAYERS 审中-公开
标题翻译：反相纳米结构电介质层
公开(公告)号：US20150171029A1
公开(公告)日：2015-06-18
申请号：US14108239
申请日：2013-12-16
申请人： David J. Michalak , James M. Blackwell , Arkaprabha Sengupta
发明人： David J. Michalak , James M. Blackwell , Arkaprabha Sengupta
IPC分类号： H01L23/00 , H01L23/50 , H01L21/02
CPC分类号： H01L21/02282 , H01L21/02203 , H01L21/31144 , H01L21/32 , H01L21/7682 , H01L21/76826 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/249975 , H01L2924/00
摘要： Embodiments of the present disclosure describe dielectric layers and methods for their fabrication and use. In some embodiments, a dielectric layer may include a dielectric material and a plurality of pores, wherein the dielectric material is arranged in an inverse nanostructure arrangement around the plurality of pores. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例描述了用于其制造和使用的电介质层及其方法。在一些实施例中，电介质层可以包括电介质材料和多个孔，其中电介质材料围绕多个孔布置成反向纳米结构布置。可以描述和/或要求保护其他实施例。

9. 发明申请

US20150170926A1 DIELECTRIC LAYERS HAVING ORDERED ELONGATE PORES 审中-公开
标题翻译：具有订购的ELONGATE PORES的电介质层
公开(公告)号：US20150170926A1
公开(公告)日：2015-06-18
申请号：US14108255
申请日：2013-12-16
申请人： David J. Michalak , Robert L. Bristol , Arkaprabha Sengupta , Mauro J. Kobrinsky
发明人： David J. Michalak , Robert L. Bristol , Arkaprabha Sengupta , Mauro J. Kobrinsky
IPC分类号： H01L21/308 , H01L23/50 , H01L21/311
CPC分类号： H01L23/50 , H01L21/02203 , H01L21/0337 , H01L21/31144 , H01L21/7682 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/233 , Y10T428/249975 , H01L2924/00
摘要： Embodiments of the present disclosure describe dielectric layers and methods for their fabrication and use. In some embodiments, a dielectric layer may include a dielectric material and a plurality of elongate pores. The dielectric material may have a first surface and an opposing second surface spaced away from the first surface in a direction defined by an axis, and may have a Young's modulus (E0) in the direction defined by the axis. Individual elongate pores of the plurality of elongate pores may extend from the second surface with a longitudinal axis substantially parallel to the axis. The plurality of elongate pores may provide the dielectric layer with a porosity, p, greater than approximately 30%, and the dielectric layer may have a Young's modulus approximately equal to E0*(1−p) in the direction defined by the axis. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例描述了用于其制造和使用的电介质层及其方法。在一些实施例中，电介质层可以包括电介质材料和多个细长孔。电介质材料可以具有在由轴线限定的方向上与第一表面隔开的第一表面和相对的第二表面，并且可以在由轴限定的方向上具有杨氏模量（E0）。多个细长孔中的单个细长孔可以从第二表面延伸，其纵轴基本上平行于该轴。多个细长的孔可以提供介电层具有大于约30％的孔隙率p，并且电介质层可以具有在由轴限定的方向上大约等于E0 *（1-p）的杨氏模量。可以描述和/或要求保护其他实施例。

10. 发明申请

US20120161295A1 CYCLIC CARBOSILANE DIELECTRIC FILMS 有权
标题翻译：循环碳化硅电介质膜
公开(公告)号：US20120161295A1
公开(公告)日：2012-06-28
申请号：US12978385
申请日：2010-12-23
申请人： David J. Michalak , James M. Blackwell , James S. Clarke
发明人： David J. Michalak , James M. Blackwell , James S. Clarke
IPC分类号： H01L29/06 , H01L21/314
CPC分类号： H01L21/02203 , C07F7/0816 , C07F7/1804 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L29/0649 , H01L51/0035 , H01L51/0094
摘要： Embodiments of the invention provide dielectric films and low-k dielectric films and methods for making dielectric and low-k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.
摘要翻译：本发明的实施例提供介电膜和低k电介质膜以及用于制造电介质和低k电介质膜的方法。电介质膜由含碳硅烷的前体制成。在本发明的实施方案中，电介质膜前体包含附着的致孔剂分子。在另外的实施例中，电介质膜具有纳米尺寸的孔。

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