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    • 5. 发明授权
    • Tunnel field-effect transistor
    • 隧道场效应晶体管
    • US08772877B2
    • 2014-07-08
    • US13551785
    • 2012-07-18
    • Mikael T BjoerkAndreas Christian DoeringPhillip Stanley-MarbellKirsten Emilie Moselund
    • Mikael T BjoerkAndreas Christian DoeringPhillip Stanley-MarbellKirsten Emilie Moselund
    • H01L29/78
    • H01L29/7391H01L29/42312
    • A tunnel field-effect transistor including at least: a source region including a corresponding source semiconductor material; a drain region including a corresponding drain semiconductor material, and a channel region including a corresponding channel semiconductor material, which is arranged between the source region and the drain region. The tunnel field-effect transistor further includes at least: a source-channel gate electrode provided on an interface between the source region and the channel region; an insulator corresponding to the source-channel gate electrode that is provided between the source-channel gate electrode and the interface between the source region and the channel region; a drain-channel gate electrode provided on an interface between the drain region and the channel region; and an insulator corresponding to the drain-channel gate electrode that is provided between the drain-channel gate electrode and the interface between the drain region and the channel region.
    • 一种隧道场效应晶体管,至少包括:包括相应源极半导体材料的源区; 包括相应的漏极半导体材料的漏极区域和布置在源极区域和漏极区域之间的包括相应的沟道半导体材料的沟道区域。 隧道场效应晶体管至少还包括:设置在源极区域和沟道区域之间的界面上的源极沟道栅电极; 与源极栅极电极和源极区域与沟道区域之间的界面之间设置的与源极栅极电极对应的绝缘体; 漏极沟道栅电极,设置在漏区和沟道区之间的界面上; 以及设置在漏极沟道栅电极和漏极区域与沟道区域之间的界面之间的与漏极沟道栅电极相对应的绝缘体。
    • 6. 发明申请
    • BALANCING LOADS OF A PLURALTY OF BUS LANES OF A SNOOPING-BASED BUS
    • 基于SNOOPING的总线的总线的平衡负载平衡
    • US20120054450A1
    • 2012-03-01
    • US13221051
    • 2011-08-30
    • Andreas Christian Doering
    • Andreas Christian Doering
    • G06F12/08
    • G06F13/4204
    • A method and system for balancing loads of a plurality of bus lanes of a snooping-based bus. The system includes: a receiver for receiving snoop transactions from the bus lanes, each of the snoop transactions having a snoop request and at least one snoop response, an analyzer for analyzing respective actual and expected loads of each of the bus lanes dependent on the received snoop transactions, and a controller for providing a next snoop request from a number of outstanding snoop requests to a buffer allocated to the system, where the buffer is dependent on the analyzed loads of the bus lanes.
    • 一种用于平衡基于窥探的总线的多个总线通道的负载的方法和系统。 该系统包括:用于从总线通道接收窥探事务的接收器,每个窥探事务具有窥探请求和至少一个侦听响应;分析器,用于分析取决于所接收的每个总线通道的各个实际和预期的负载 监听事务,以及控制器,用于从分配给系统的缓冲区中提供来自多个未完成侦听请求的下一个窥探请求,其中缓冲区取决于分析的总线通道的负载。
    • 8. 发明申请
    • TUNNEL FIELD-EFFECT TRANSISTOR
    • 隧道场效应晶体管
    • US20130021061A1
    • 2013-01-24
    • US13551785
    • 2012-07-18
    • Mikael T. BjoerkAndreas Christian DoeringPhillip Stanley-MarbellKirsten Emilie Moselund
    • Mikael T. BjoerkAndreas Christian DoeringPhillip Stanley-MarbellKirsten Emilie Moselund
    • H01L29/78H03K19/21H01L21/336
    • H01L29/7391H01L29/42312
    • A tunnel field-effect transistor including at least: a source region including a corresponding source semiconductor material; a drain region including a corresponding drain semiconductor material, and a channel region including a corresponding channel semiconductor material, which is arranged between the source region and the drain region. The tunnel field-effect transistor further includes at least: a source-channel gate electrode provided on an interface between the source region and the channel region; an insulator corresponding to the source-channel gate electrode that is provided between the source-channel gate electrode and the interface between the source region and the channel region; a drain-channel gate electrode provided on an interface between the drain region and the channel region; and an insulator corresponding to the drain-channel gate electrode that is provided between the drain-channel gate electrode and the interface between the drain region and the channel region.
    • 一种隧道场效应晶体管,至少包括:包括相应源极半导体材料的源区; 包括相应的漏极半导体材料的漏极区域和布置在源极区域和漏极区域之间的包括相应的沟道半导体材料的沟道区域。 隧道场效应晶体管至少还包括:设置在源极区域和沟道区域之间的界面上的源极沟道栅电极; 与源极栅极电极和源极区域与沟道区域之间的界面之间设置的与源极栅极电极对应的绝缘体; 漏极沟道栅电极,设置在漏区和沟道区之间的界面上; 以及设置在漏极沟道栅电极和漏极区域与沟道区域之间的界面之间的与漏极沟道栅电极相对应的绝缘体。