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1. 发明授权

US06440825B1 Method of controlling outdiffusion in a doped three-dimensional film 有权
标题翻译：控制掺杂三维膜中扩散扩散的方法
公开(公告)号：US06440825B1
公开(公告)日：2002-08-27
申请号：US09616540
申请日：2000-07-14
申请人： Fernando González , D. Mark Durcan , Luan C. Tran , Robert B. Kerr , David F. Cheffings , Howard E. Rhodes
发明人： Fernando González , D. Mark Durcan , Luan C. Tran , Robert B. Kerr , David F. Cheffings , Howard E. Rhodes
IPC分类号： H01L2170
CPC分类号： H01L27/10852 , H01L28/82
摘要： A solid state fabrication technique for controlling the amount of outdiffusion from a three-dimensional film is comprised of the step of providing a first layer of insitu doped film in a manner to define an upper portion and a lower portion. A second layer of undoped film is provided on top of the first layer to similarly define an upper portion and a lower portion. The first and second layers are etched according to a predetermined pattern. The second layer is doped to obtain a desired dopant density which decreases from the upper portion to the lower portion. Outdiffusion of the dopant from the upper portion of the second layer results in the dopant migrating to the lower portion of the second layer. Thus, outdiffusion into the substrate, and the problems caused thereby, are eliminated or greatly reduced.
摘要翻译：用于控制来自三维膜的向外扩散量的固态制造技术包括以限定上部和下部的方式提供第一层原位掺杂膜的步骤。第二层未掺杂的膜设置在第一层的顶部上，以类似地限定上部和下部。根据预定图案蚀刻第一层和第二层。掺杂第二层以获得从上部向下部减小的期望的掺杂剂密度。从第二层的上部扩散掺杂剂导致掺杂剂迁移到第二层的下部。因此，消除或大大降低了向基板的扩散和由此引起的问题。

2. 发明授权

US5994182A Method of reducing outdiffusion from a doped three-dimensional polysilicon film into substrate by using angled implants 失效
标题翻译：通过使用倾斜植入物将掺杂的三维多晶硅膜扩散到衬底中的方法
公开(公告)号：US5994182A
公开(公告)日：1999-11-30
申请号：US587277
申请日：1996-01-18
申请人： Fernando Gonzalez , D. Mark Durcan , Luan C. Tran , Robert B. Kerr , David F. Cheffings , Howard E. Rhodes
发明人： Fernando Gonzalez , D. Mark Durcan , Luan C. Tran , Robert B. Kerr , David F. Cheffings , Howard E. Rhodes
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/70 , H01L21/265
CPC分类号： H01L27/10852 , H01L28/82
摘要： A solid state fabrication technique for controlling the amount of outdiffusion from a three-dimensional film is comprised of the step of providing a first layer of insitu doped film in a manner to define an upper portion and a lower portion. A second layer of undoped film is provided on top of the first layer to similarly define an upper portion and a lower portion. The first and second layers are etched according to a predetermined pattern. The second layer is doped to obtain a desired dopant density which decreases from the upper portion to the lower portion. Outdiffusion of the dopant from the upper portion of the second layer results in the dopant migrating to the lower portion of the second layer. Thus, outdiffusion into the substrate, and the problems caused thereby, are eliminated or greatly reduced.
摘要翻译：用于控制来自三维膜的向外扩散量的固态制造技术包括以限定上部和下部的方式提供第一层原位掺杂膜的步骤。第二层未掺杂的膜设置在第一层的顶部上，以类似地限定上部和下部。根据预定图案蚀刻第一层和第二层。掺杂第二层以获得从上部向下部减小的期望的掺杂剂密度。从第二层的上部扩散掺杂剂导致掺杂剂迁移到第二层的下部。因此，消除或大大降低了向基板的扩散和由此引起的问题。

3. 发明授权

US6159790A Method of controlling outdiffusion in doped three-dimensional film by using angled implants 有权
标题翻译：通过使用倾斜植入物控制掺杂三维膜中的扩散扩散的方法
公开(公告)号：US6159790A
公开(公告)日：2000-12-12
申请号：US310489
申请日：1999-05-12
申请人： Fernando Gonzalez , D. Mark Durcan , Luan C. Tran , Robert B. Kerr , David F. Cheffings , Howard E. Rhodes
发明人： Fernando Gonzalez , D. Mark Durcan , Luan C. Tran , Robert B. Kerr , David F. Cheffings , Howard E. Rhodes
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/70
CPC分类号： H01L27/10852 , H01L28/82
摘要： A solid state fabrication technique for controlling the amount of outdiffusion from a three-dimensional film is comprised of the step of providing a first layer of insitu doped film in a manner to define an upper portion and a lower portion. A second layer of undoped film is provided on top of the first layer to similarly define an upper portion and a lower portion. The first and second layers are etched according to a predetermined pattern. The second layer is doped to obtain a desired dopant density which decreases from the upper portion to the lower portion. Outdiffusion of the dopant from the upper portion of the second layer results in the dopant migrating to the lower portion of the second layer. Thus, outdiffusion into the substrate, and the problems caused thereby, are eliminated or greatly reduced.
摘要翻译：用于控制来自三维膜的向外扩散量的固态制造技术包括以限定上部和下部的方式提供第一层原位掺杂膜的步骤。第二层未掺杂的膜设置在第一层的顶部上，以类似地限定上部和下部。根据预定图案蚀刻第一层和第二层。掺杂第二层以获得从上部向下部减小的期望的掺杂剂密度。从第二层的上部扩散掺杂剂导致掺杂剂迁移到第二层的下部。因此，消除或大大降低了向基板的扩散和由此引起的问题。

4. 发明授权

US06211545B1 Device fabricated by a method of controlling outdiffusion from a doped three-dimensional film 有权
标题翻译：通过控制来自掺杂三维膜的扩散扩散的方法制造的器件
公开(公告)号：US06211545B1
公开(公告)日：2001-04-03
申请号：US09310515
申请日：1999-05-12
申请人： Fernando Gonzalez , D. Mark Durcan , Luan C. Tran , Robert B. Kerr , David F. Cheffings , Howard E. Rhodes
发明人： Fernando Gonzalez , D. Mark Durcan , Luan C. Tran , Robert B. Kerr , David F. Cheffings , Howard E. Rhodes
IPC分类号： H01L27108
CPC分类号： H01L27/10852 , H01L28/82
摘要： A solid state fabrication technique for controlling the amount of outdiffusion from a three-dimensional film is comprised of the step of providing a first layer of insitu doped film in a manner to define an upper portion and a lower portion. A second layer of undoped film is provided on top of the first layer to similarly define an upper portion and a lower portion. The first and second layers are etched according to a predetermined pattern. The second layer is doped to obtain a desired dopant density which decreases from the upper portion to the lower portion. Outdiffusion of the dopant from the upper portion of the second layer results in the dopant migrating to the lower portion of the second layer. Thus, outdiffusion into the substrate, and the problems caused thereby, are eliminated or greatly reduced.
摘要翻译：用于控制来自三维膜的向外扩散量的固态制造技术包括以限定上部和下部的方式提供第一层原位掺杂膜的步骤。第二层未掺杂的膜设置在第一层的顶部上，以类似地限定上部和下部。根据预定图案蚀刻第一层和第二层。掺杂第二层以获得从上部向下部减小的期望的掺杂剂密度。从第二层的上部扩散掺杂剂导致掺杂剂迁移到第二层的下部。因此，消除或大大降低了向基板的扩散和由此引起的问题。

5. 发明授权

US06812993B2 Optical multiplexer and cross-switch using etched liquid crystal fabry-perot etalons having enhanced spectral resolution and transmission characteristic 有权
标题翻译：光复用器和交叉开关使用蚀刻液晶fabry-perot标准具具有增强的光谱分辨率和传输特性
公开(公告)号：US06812993B2
公开(公告)日：2004-11-02
申请号：US10404417
申请日：2003-04-01
申请人： John Noto , Robert B. Kerr , Hailiang Zhang , William Z. Marder , Anthony C. Warren
发明人： John Noto , Robert B. Kerr , Hailiang Zhang , William Z. Marder , Anthony C. Warren
IPC分类号： G02F113
CPC分类号： G02B26/02 , G02B6/29358 , G02B6/2938 , G02B6/3556 , G02B6/356 , G02B6/3582 , G02B26/001 , G02F1/216
摘要： A novel aspect of the invention is a structural arrangement to widen a Fabry-Perot gap beyond a 100-micron LC thickness. The widening permits greatly enhanced spectral discrimination (i.e. many more WDM channels) across the device response range, which is expanded to ITU standards by use of a twin etalon configuration. A liquid crystal optical multiplexer according to the present invention is a two-etalon Fabry-Perot laser etched into many (>100) sub-etalons in a rectangular array. Each sub-etalon is independently tunable and can be coupled to a distinct fiber. Any single sub-etalon or random combination of sub-etalons is free to be tuned to a particular wavelength corresponding to one of the input channels. This allows for any combination of signals (i.e. digital video, data and voice) in a signal broadband channel to be switched to any of several receivers. Wavelength division multiplexing (WDM) is used to combine or separate individual types of signals from a single fiber. Phase-matching coatings are used on the materials within the Fabry-Perot gap, thereby enhancing transmission performance of the WDM device.
摘要翻译：本发明的新颖方面是将Fabry-Perot间隙扩大超过100微米LC厚度的结构布置。扩展允许跨设备响应范围大大增强频谱辨别（即更多的WDM信道），其通过使用双标准配置扩展到ITU标准。根据本发明的液晶光复用器是以矩形阵列蚀刻成许多（> 100）子标准具的双标准法布里 - 珀罗激光器。每个子标准具是独立可调谐的，并且可以耦合到不同的纤维。子标准信号的任何单个子标准或随机组合可自由地调谐到对应于一个输入通道的特定波长。这允许将信号宽带信道中的信号（即，数字视频，数据和语音）的任何组合切换到几个接收机中的任何一个。波分复用（WDM）用于组合或分离来自单个光纤的各种类型的信号。在Fabry-Perot间隙中的材料上使用相位匹配涂层，从而提高WDM器件的传输性能。

6. 发明授权

US06954253B2 Optical multiplexer and cross-switch using etched liquid crystal fabry-perot etalons 有权
标题翻译：光复用器和交叉开关使用蚀刻液晶fabry-perot标准具
公开(公告)号：US06954253B2
公开(公告)日：2005-10-11
申请号：US09775970
申请日：2001-02-02
申请人： John Noto , Robert B. Kerr , Hailiang Zhang , William Z. Marder , Anthony C. Warren
发明人： John Noto , Robert B. Kerr , Hailiang Zhang , William Z. Marder , Anthony C. Warren
IPC分类号： G02B6/34 , G02B6/35 , G02B26/00 , G02B26/02 , G02F1/21 , G02F1/13 , G02F1/1335 , G02F1/1347
CPC分类号： G02B26/02 , G02B6/29358 , G02B6/2938 , G02B6/3556 , G02B6/356 , G02B6/3582 , G02B26/001 , G02F1/216
摘要： A novel aspect to the invention is a structural arrangement to widen the Fabry-Perot gap beyond a 100-micron LC thickness. The widening permits greatly enhanced spectral discrimination (i.e. many more WDM channels) across the device response range, which is expanded to ITU standards by use of the twin etalon configuration. A liquid crystal optical multiplexer according to the present invention is a two-etalon Fabry-Perot laser etched into many (>100) sub-etalons in a rectangular array. Each sub-etalon is independently tunable and can be coupled to a distinct fiber. Any single sub-etalon or random combination of sub-etalons is free to be tuned to a particular wavelength corresponding to one of the input channels. This allows for any combination of signals (i.e digital video, data and voice) in a signal broadband channel to be switched to any of several receivers. Wavelength division multiplexing (WDM) is used to combine or separate individual types of signals from a single fiber. Phase-matching coatings are used on the materials within the Fabry-Perot gap, thereby enhancing transmission performance of the WDM device.
摘要翻译：本发明的一个新颖的方面是结构布置，以使Fabry-Perot间隙扩大超过100微米的LC厚度。扩展允许跨越设备响应范围大大增强了频谱辨别（即更多的WDM信道），其通过使用双标准配置扩展到ITU标准。根据本发明的液晶光复用器是以矩形阵列蚀刻成许多（> 100）子标准具的双标准法布里 - 珀罗激光器。每个子标准具是独立可调谐的，并且可以耦合到不同的纤维。子标准信号的任何单个子标准或随机组合可自由地调谐到对应于一个输入通道的特定波长。这允许将信号宽带信道中的信号（即，数字视频，数据和语音）的任何组合切换到多个接收机中的任何一个。波分复用（WDM）用于组合或分离来自单个光纤的各种类型的信号。在Fabry-Perot间隙中的材料上使用相位匹配涂层，从而提高WDM器件的传输性能。

7. 发明授权

US06757046B2 Optical multiplexer and cross-switch using etched liquid crystal Fabry-Perot etalons 有权
标题翻译：光复用器和交叉开关使用蚀刻液晶法布里 - 珀罗标准具
公开(公告)号：US06757046B2
公开(公告)日：2004-06-29
申请号：US10404615
申请日：2003-04-01
申请人： John Noto , Robert B. Kerr , Hailiang Zhang , William Z. Marder , Anthony C. Warren
发明人： John Noto , Robert B. Kerr , Hailiang Zhang , William Z. Marder , Anthony C. Warren
IPC分类号： G02F113
CPC分类号： G02B26/02 , G02B6/29358 , G02B6/2938 , G02B6/3556 , G02B6/356 , G02B6/3582 , G02B26/001 , G02F1/216
摘要： An LC optical multiplexer according to the present invention is a two-etalon Fabry-Perot laser etched into many (>100) sub-etalons in a rectangular array. Each sub-etalon is independently tunable and can be coupled to a distinct fiber. Any single sub-etalon or random combination of sub-etalons is free to be tuned to a particular wavelength corresponding to one of the input channels. This allows for any combination of signals (i.e digital video, data and voice) in a signal broadband channel to be switched to any of several receivers. Wavelength division multiplexing (WDM) is used to combine or separate individual types of signals from a single fiber. Phase-matching coatings are used on the materials within the Fabry-Perot gap, thereby enhancing transmission performance of the WDM device. Mechanical techniques are used to widen the Fabry-Perot gap beyond a 100-micron LC thickness. The widening permits greatly enhanced spectral discrimination (i.e. many more WDM channels) across the device response range, which is expanded to ITU standards by use of the twin etalon configuration. A fully agile optical cross-switch of many (>100) transmitted and received channels is achieved by use of two multiplexers in an optical network.
摘要翻译：根据本发明的LC光复用器是以矩形阵列蚀刻成许多（> 100）子标准具的双标准法布里 - 珀罗激光器。每个子标准具是独立可调谐的，并且可以耦合到不同的纤维。子标准信号的任何单个子标准或随机组合可自由地调谐到对应于一个输入通道的特定波长。这允许将信号宽带信道中的信号（即，数字视频，数据和语音）的任何组合切换到多个接收机中的任何一个。波分复用（WDM）用于组合或分离来自单个光纤的各种类型的信号。在Fabry-Perot间隙中的材料上使用相位匹配涂层，从而提高WDM器件的传输性能。机械技术用于扩大超过100微米LC厚度的法布里 - 珀罗间隙。扩展允许跨越设备响应范围大大增强了频谱辨别（即更多的WDM信道），其通过使用双标准配置扩展到ITU标准。许多（> 100）发射和接收信道的完全灵活的光交叉开关通过在光网络中使用两个多路复用器来实现。

8. 发明授权

US6043542A Method and integrated circuit structure for preventing latch-up in CMOS integrated circuit devices 失效
标题翻译：用于防止CMOS集成电路器件闭锁的方法和集成电路结构
公开(公告)号：US6043542A
公开(公告)日：2000-03-28
申请号：US790906
申请日：1997-01-29
申请人： Brent Keeth , Robert B. Kerr
发明人： Brent Keeth , Robert B. Kerr
IPC分类号： H01L27/02 , H01L27/092 , H01L29/76
CPC分类号： H01L27/0255 , H01L27/0921
摘要： An integrated circuit structure for preventing latch-up of an integrated circuit device, such as a dynamic random access memory, that is operated with a negative substrate bias in use of the device. The integrated circuit structure includes a p-type substrate having an n-well region formed therein, with a rectifying junction formed in a lightly doped portion of the n-well region and connected to provide a path to ground for clamping the substrate to ground during power-up conditions. In another embodiment, a rectifying junction formed in a lightly doped portion of the n-well region functions as a diode clamp for a pumped bias voltage for the n-well region. In forming the rectifying junction in the n-well region, the n-plus ion implantation mask that is used in forming n-plus doped regions in the n-well region is used to mask portions of the n-well region during the n-plus ion implantation process and a metal barrier layer is formed on the exposed lightly doped portions of the n-well region, so that a Schottky diode is formed. Also described is a method for fabricating an integrated circuit structure which includes forming a rectifying junction in the well portion for providing a diode clamp between voltage sources of the integrated circuit structure.
摘要翻译：一种集成电路结构，用于防止在使用该装置时利用负的衬底偏置来操作诸如动态随机存取存储器的集成电路器件的闩锁。集成电路结构包括其中形成有n阱区的p型衬底，其中形成在n阱区的轻掺杂部分中的整流结，并连接以提供到地的路径，以将衬底夹持在地之间上电条件。在另一个实施例中，形成在n阱区域的轻掺杂部分中的整流结构用作用于n阱区域的泵浦偏置电压的二极管钳位。在n阱区域形成整流结时，在n阱区域中形成n个正掺杂区域所使用的n +离子注入掩模用于在n-阱区域中掩模n阱区域的部分，加上离子注入工艺和在n-阱区的暴露的轻掺杂部分上形成金属阻挡层，从而形成肖特基二极管。还描述了一种用于制造集成电路结构的方法，其包括在阱部分中形成整流结，以在集成电路结构的电压源之间提供二极管钳位。

9. 发明授权

US5981322A Method for preventing latch-up in cmos integrated circuit devices 失效
标题翻译：防止在cmos集成电路器件中闭锁的方法
公开(公告)号：US5981322A
公开(公告)日：1999-11-09
申请号：US94043
申请日：1998-05-09
申请人： Brent Keeth , Robert B. Kerr
发明人： Brent Keeth , Robert B. Kerr
IPC分类号： H01L27/02 , H01L27/092 , H01L21/8238
CPC分类号： H01L27/0255 , H01L27/0921
摘要： An integrated circuit structure for preventing latch-up of an integrated circuit device, such as a dynamic random access memory, that is operated with a negative substrate bias in use of the device. The integrated circuit structure includes a p-type substrate having an n-well region formed therein, with a rectifying junction formed in a lightly doped portion of the n-well region and connected to provide a path to ground for clamping the substrate to ground during power-up conditions. In another embodiment, a rectifying junction formed in a lightly doped portion of the n-well region functions as a diode clamp for a pumped bias voltage for the n-well region. In forming the rectifying junction in the n-well region, the n-plus ion implantation mask that is used in forming n-plus doped regions in the n-well region is used to mask portions of the n-well region during the n-plus ion implantation process and a metal barrier layer is formed on the exposed lightly doped portions of the n-well region, so that a Schottky diode is formed. Also described is a method for fabricating an integrated circuit structure which includes forming a rectifying junction in the well portion for providing a diode clamp between voltage sources of the integrated circuit structure.
摘要翻译：一种集成电路结构，用于防止在使用该装置时利用负的衬底偏置来操作诸如动态随机存取存储器的集成电路器件的闩锁。集成电路结构包括其中形成有n阱区的p型衬底，其中形成在n阱区的轻掺杂部分中的整流结，并连接以提供到地的路径，以将衬底夹持在地之间上电条件。在另一个实施例中，形成在n阱区域的轻掺杂部分中的整流结构用作用于n阱区域的泵浦偏置电压的二极管钳位。在n阱区域形成整流结时，在n阱区域中形成n个正掺杂区域所用的n +离子注入掩模用于在n-阱区域中掩模n阱区域的部分，加上离子注入工艺和在n-阱区的暴露的轻掺杂部分上形成金属阻挡层，从而形成肖特基二极管。还描述了一种用于制造集成电路结构的方法，其包括在阱部分中形成整流结，以在集成电路结构的电压源之间提供二极管钳位。

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