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    • 8. 发明授权
    • Nano-scale resistance cross-point memory array
    • 纳米级电阻交叉点存储阵列
    • US06774004B1
    • 2004-08-10
    • US10391357
    • 2003-03-17
    • Sheng Teng HsuWei-Wei ZhuangWei PanFengyan Zhang
    • Sheng Teng HsuWei-Wei ZhuangWei PanFengyan Zhang
    • H01L2120
    • G11C13/0007G11C2213/31G11C2213/77H01L27/2409H01L27/2463H01L45/04H01L45/1233H01L45/147H01L45/1683
    • A method of fabricating a nano-scale resistance cross-point memory array includes preparing a silicon substrate; depositing silicon oxide on the substrate to a predetermined thickness; forming a nano-scale trench in the silicon oxide; depositing a first connection line in the trench; depositing a memory resistor layer in the trench on the first connection line; depositing a second connection line in the trench on the memory resistor layer; and completing the memory array. A cross-point memory array includes a silicon substrate; a first connection line formed on the substrate; a colossal magnetoresistive layer formed on the first connection line; a silicon nitride layer formed on a portion of the colossal magnetoresistive layer; and a second connection line formed adjacent the silicon nitride layer and on the colossal magnetoresistive layer.
    • 制造纳米尺度电阻交叉点存储器阵列的方法包括制备硅衬底; 在衬底上沉积氧化硅至预定厚度; 在氧化硅中形成纳米尺度的沟槽; 在沟槽中沉积第一连接线; 在第一连接线上的沟槽中沉积记忆电阻层; 在所述存储器电阻层的沟槽中沉积第二连接线; 并完成内存阵列。 交叉点存储器阵列包括硅衬底; 形成在所述基板上的第一连接线; 形成在第一连接线上的巨大的磁阻层; 形成在巨磁阻层的一部分上的氮化硅层; 以及与氮化硅层和巨磁阻层相邻形成的第二连接线。
    • 9. 发明授权
    • Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same
    • 复合铱金属 - 氧阻隔结构与难熔金属伴侣屏障及其方法相同
    • US06190963B1
    • 2001-02-20
    • US09316661
    • 1999-05-21
    • Fengyan ZhangSheng Teng HsuJer-shen MaaWei-Wei Zhuang
    • Fengyan ZhangSheng Teng HsuJer-shen MaaWei-Wei Zhuang
    • H01L218242
    • H01L28/75H01L21/28568H01L28/55
    • An Ir—M—O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir—M—O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. A method for forming an Ir—M—O composite film barrier layer and an Ir—M—O composite film ferroelectric electrode are also provided.
    • 已经提供了可用于形成铁电电容器的电极的Ir-M-O复合膜,其中M包括各种难熔金属。 Ir组合膜在氧气环境中耐高温退火。 当与由相同种类的M过渡金属制成的底层阻挡层一起使用时,所得到的导电屏障还抑制Ir扩散到任何下面的Si衬底中。 结果,不形成铱硅化物产物,这降低了电极界面的特性。 也就是说,即使在氧气中,Ir组合膜在高温退火过程中仍保持导电性,不会剥离或形成小丘。 Ir-M-O导电电极/屏障结构可用于非易失性FeRAM器件,DRAM,电容器,热释电红外传感器,光学显示器,光开关,压电换能器和表面声波器件。 还提供了形成Ir-M-O复合膜阻挡层和Ir-M-O复合膜铁电电极的方法。