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    • 4. 发明授权
    • Slider for a cutter
    • 滑块为切割机
    • US08950074B2
    • 2015-02-10
    • US13586101
    • 2012-08-15
    • Chih-Wei Hsu
    • Chih-Wei Hsu
    • B26B3/06
    • B26B5/002
    • A slider has an upper sliding element, a lower sliding element and a resilient tab. The upper sliding element has two first engaging segments disposed on an inner side of the upper sliding element. The lower sliding element has two second engaging segments disposed on an outer side facing the inner side of the upper sliding element and engaging the first engaging segments. A tab holding base is formed on and protrudes from the outer side of the lower sliding element and has a chamber defined in the tab holding base. The resilient tab is held in the chamber in the lower sliding element and has two legs. Accordingly, a slider having a structure in a closed condition is provided to prevent objects from entering into the chamber to interfere the operation of the resilient tab and the operation of the slider is smooth.
    • 滑块具有上滑动元件,下滑动元件和弹性凸片。 上滑动元件具有设置在上滑动元件的内侧上的两个第一接合段。 下滑动元件具有两个第二接合段,其设置在面向上滑动元件的内侧的外侧上并与第一接合段接合。 在下滑动元件的外侧形成突出部保持基座,并且在该突出部保持基部具有限定的室。 弹性片保持在下滑动元件的腔室中并具有两个腿。 因此,具有处于闭合状态的结构的滑块被设置成防止物体进入室以干扰弹性片的操作,并且滑块的操作是平滑的。
    • 7. 发明申请
    • DYNAMIC COMPENSATION IN ADVANCED PROCESS CONTROL
    • 高级过程控制中的动态补偿
    • US20110238197A1
    • 2011-09-29
    • US12731348
    • 2010-03-25
    • Chih-Wei HsuJin-Ning SungShin-Rung LuJong-I Mou
    • Chih-Wei HsuJin-Ning SungShin-Rung LuJong-I Mou
    • G05B13/04G06F17/00
    • G05B19/41875G05B2219/32017G05B2219/32189G05B2219/45031Y02P90/22
    • A method of semiconductor fabrication is provided. The method includes providing a model for a device parameter of a wafer as a function of first and second process parameters. The first and second process parameters correspond to different wafer characteristics, respectively. The method includes deriving target values of the first and second process parameters based on a specified target value of the device parameter. The method includes performing a first fabrication process in response to the target value of the first process parameter. The method includes measuring an actual value of the first process parameter thereafter. The method includes updating the model using the actual value of the first process parameter. The method includes deriving a revised target value of the second process parameter using the updated model. The method includes performing a second fabrication process in response to the revised target value of the second process parameter.
    • 提供了一种半导体制造方法。 该方法包括提供晶片的器件参数的模型作为第一和第二工艺参数的函数。 第一和第二工艺参数分别对应于不同的晶片特性。 该方法包括基于设备参数的指定目标值导出第一和第二处理参数的目标值。 该方法包括响应于第一过程参数的目标值执行第一制造过程。 该方法包括此后测量第一处理参数的实际值。 该方法包括使用第一过程参数的实际值更新模型。 该方法包括使用更新的模型导出第二过程参数的修正目标值。 该方法包括响应于修改的第二过程参数的目标值执行第二制造过程。
    • 10. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    • 半导体器件及其形成方法
    • US20090283796A1
    • 2009-11-19
    • US12186966
    • 2008-08-06
    • Florin UdreaChih-Wei Hsu
    • Florin UdreaChih-Wei Hsu
    • H01L29/739
    • H01L29/7397H01L29/0834H01L29/66348
    • A bipolar high voltage/power semiconductor device having a low voltage terminal and a high voltage terminal is disclosed. The bipolar high voltage/power semiconductor is a vertical insulated gate bipolar transistor with injection efficiency adjustment formed by highly doped n+ islands in a p+ anode layer. The device has a vertical drift region of a first conductivity type and having vertical first and second ends. In one example, a region of the second conductivity type is provided at the second end of the vertical drift region connected directly to the vertical high voltage terminal. In another example, a vertical buffer region of the first conductivity type is provided at the vertical second end of the vertical drift region and a vertical region of a second conductivity type is provided on the other side of the vertical buffer region and connected to the vertical high voltage terminal. A plurality of electrically floating lateral island regions are provided within the vertical drift region at or towards the vertical second end of the vertical drift region, the plurality of electrically floating lateral island regions being of the first conductivity type and being more highly doped than the drift region.
    • 公开了一种具有低电压端子和高电压端子的双极型高压/功率半导体器件。 双极性高压/功率半导体是垂直绝缘栅双极晶体管,其具有由p +阳极层中的高掺杂n +岛形成的注入效率调节。 该器件具有第一导电类型的垂直漂移区,并具有垂直的第一和第二端。 在一个示例中,第二导电类型的区域设置在直接连接到垂直高压端子的垂直漂移区域的第二端。 在另一示例中,第一导电类型的垂直缓冲区域设置在垂直漂移区域的垂直第二端,并且第二导电类型的垂直区域设置在垂直缓冲区域的另一侧并连接到垂直方向 高压端子。 多个电浮动横向岛区域设置在垂直漂移区域内或垂直于垂直漂移区域的垂直第二端处,多个电浮动横向岛区域是第一导电类型并且比漂移更高的掺杂 地区。