会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Method and apparatus for reducing noise and detecting electrode faults in medical equipment
    • 降低医疗设备噪声和检测电极故障的方法和装置
    • US06974420B2
    • 2005-12-13
    • US10200411
    • 2002-07-22
    • Wilhelm J. KaiserHorst WeberWolfgang Winter
    • Wilhelm J. KaiserHorst WeberWolfgang Winter
    • A61B5/0408A61B5/0424A61B5/05A61N5/04
    • A61B5/0424
    • A method and apparatus for reducing noise and detecting electrode faults in a physiological activity acquisition system. The method includes the act of delivering a carrier signal through an electrode connected to a subject. Once the carrier signal is delivered, a combined signal having an electrical-activity portion and a carrier-signal portion is sensed by at least one signal sensing electrode attached to the subject. A low-pass, finite impulse response filter, having a first zero point frequency substantially the same as the carrier signal, separates the carrier signal portion from the electrical activity portion. An impedance value for the sensing electrode is calculated using the carrier signal portion. The calculated impedance value is compared against a known value to determine whether an electrode fault exists.
    • 一种用于减少生理活动获取系统中噪声和检测电极故障的方法和装置。 该方法包括通过连接到对象的电极传递载波信号的动作。 一旦载波信号被传送,具有电活动部分和载波信号部分的组合信号由连接到对象的至少一个信号感测电极来感测。 具有与载波信号基本相同的第一零点频率的低通有限脉冲响应滤波器将载波信号部分与电活动部分分离。 使用载波信号部分计算感测电极的阻抗值。 将计算的阻抗值与已知值进行比较,以确定是否存在电极故障。
    • 6. 发明授权
    • Interference-potential-compensated thyristor comprising at least four
zones of different type of conductivity
    • 干扰电位补偿晶闸管包括至少四个不同导电类型的区域
    • US4282542A
    • 1981-08-04
    • US81805
    • 1979-12-04
    • Dieter SilberMarius FullmannWolfgang Winter
    • Dieter SilberMarius FullmannWolfgang Winter
    • H01L29/74H01L31/111
    • H01L31/1113H01L29/7428
    • An interference-potential-compensated thyristor comprising, a common emitter zone of one conductivity type, a common main base zone of an opposite conductivity type in contact with said common emitter zone, a common control base of said one conductivity type in contact with said common main base, first and second outer emitter zones of said opposite conductivity type in contact with said common control base, a common metallized electrode layer in contact with said common emitter zone, a first opposite metallized electrode layer in contact with a portion of said common control base and said first outer emitter zone at a junction between said common control base and said first outer emitter zone, and a second opposite metallized electrode layer in contact with a portion of said common control base and said second outer emitter zone at a junction between said common control base and said second outer emitter zone, said first outer emitter zone defining a pilot thyristor part thereabout and said second outer emitter zone defining a sequential thyristor thereabout, a geometry of said first and second outer emitter zones and said first and second opposite metallized electrode layers being chosen so that a capacitance resulting from a forward blocking p-n junction and the surface resistance of said common control base result in a potential which compensates and which approximately corresponds to a maximum interference potential occurring in said common control base beneath said first outer emitter zone, and with an optical or electrical triggering, a potential develops in said common control base adjacent said portion of said first outer emitter zone in contact with said first opposite metallized electrode layer which is substantially lower than the maximum turn-on potential produced in the common control base beneath said first outer emitter zone.
    • 一种干涉电位补偿晶闸管,包括:一个导电类型的公共发射极区,与所述共发射极区接触的相反导电类型的公共主基区,与所述公共接触的所述一导电类型的公共控制基极 主基座,与所述公共控制基座接触的所述相反导电类型的第一和第二外部发射极区域,与所述公共发射极区域接触的公共金属化电极层,与所述公共控制部分的一部分接触的第一相对的金属化电极层 在所述公共控制基极和所述第一外部发射极区域之间的接合处的所述第一外部发射极区域和与所述公共控制基极和所述第一外部发射极区域之间的接合处的所述公共控制基极和所述第二外部发射极区域的一部分接触的第二相对的金属化电极层 公共控制基极和所述第二外部发射极区域,所述第一外部发射极区域在其周围限定引导可控硅部件 d所述第二外部发射极区限定在其周围的顺序晶闸管,所述第一和第二外部发射极区的几何形状以及所述第一和第二相对的金属化电极层被选择为使得由正向阻挡pn结产生的电容和所述第一和第二外部发射极的表面电阻 公共控制基底导致补偿的电位,并且其大致对应于在所述第一外部发射极区域下方的所述公共控制基底中出现的最大干扰电位,并且随着光学或电气触发,在所述公共控制基座中邻近所述部分产生电位 所述第一外部发射极区域与所述第一相对的金属化电极层接触,所述第一相对的金属化电极层基本上低于在所述第一外部发射极区域下面的公共控制基底中产生的最大导通电位。
    • 8. 发明授权
    • Light fired thyristor with faulty firing protection
    • 闪光晶闸管故障点火保护
    • US4122480A
    • 1978-10-24
    • US738363
    • 1976-11-03
    • Dieter SilberKarl-Julius FinckMarius FullmannWolfgang Winter
    • Dieter SilberKarl-Julius FinckMarius FullmannWolfgang Winter
    • H01L31/111H01L29/74
    • H01L31/1113
    • A light fired thyristor including a semiconductor body having four zones of alternatingly opposite conductivity types constituting a first or cathode emitter zone, a control base zone adjacent thereto, a main base zone and a second or anode emitter zone with the cathode emitter zone being formed within the control base zone at one major surface of the semiconductor body and being divided into a plurality of separate regions of which one serves as the firing region of the first emitter zone to fire the thyristor in response to impinging radiation energy. The firing region of the first emitter zone is provided in part with a first ohmic contact which is ohmically connected to a further ohmic contact connected to the control base region adjacent the edge of the semiconductor body. The remaining regions of the first emitter zone are provided with a cathode contact which simultaneously contacts the portions of the control base zone between these regions and forms short circuits with the control base zone. Consequently with interfering currents which are approximately uniformly distributed over the thyristor area, an increase in potential is produced in the firing region of the first emitter zone which increase is in the same direction as the increase in potential in the firing region of the control base zone and the likelihood of a faulty firing of the thyristor is reduced.
    • 一种点燃晶闸管,包括具有构成第一或阴极发射区的交替相反导电类型的四个区域的半导体本体,与其相邻的控制基区,主基极区和具有阴极发射区的第二或阳极发射区, 所述控制基区在所述半导体主体的一个主表面处,并且被分成多个分开的区域,其中一个区域用作所述第一发射区的点火区域,以响应于入射辐射能而触发所述晶闸管。 第一发射区的发射区域部分地设置有第一欧姆接触,欧姆接触与连接到与半导体本体的边缘相邻的控制基极区域的另一欧姆接触欧姆连接。 第一发射区的剩余区域设置有阴极接触件,其同时接触这些区域之间的控制基区的部分并且与控制基区形成短路。 因此,由于大致均匀地分布在晶闸管区域上的干扰电流,在第一发射区的点火区域产生增加的电位,该增加与控制基区的烧制区域中的电位增加方向相同 并且晶闸管发生故障的可能性降低。