专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06728282B2 Engineering the gain/loss profile of intersubband optical devices having heterogeneous cascades 有权
标题翻译：设计具有异质级联的子带间光学器件的增益/损耗曲线
公开(公告)号：US06728282B2
公开(公告)日：2004-04-27
申请号：US09883542
申请日：2001-06-18
申请人： Federico Capasso , Alfred Yi Cho , Rafaelle Colombelli , Claire F. Gmachl , Hock Min Ng , Deborah Lee Sivco
发明人： Federico Capasso , Alfred Yi Cho , Rafaelle Colombelli , Claire F. Gmachl , Hock Min Ng , Deborah Lee Sivco
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/3402 , H01S5/3422 , H01S5/4087 , H01S2301/18
摘要： An optical device includes a stack of at least two different intersubband (ISB) optical sub-devices in which the gain/loss profiles of the individual ISB sub-devices are mutually adapted, or engineered, so as to generate a predetermined overall function for the combination. We define this combination device as being heterogeneous since not all of the individual ISB sub-devices are identical to one another. Illustratively, the parameters of each individual ISB sub-device that might be subject to this engineering process include: the peak energy of the ISB optical transitions (emission or absorption) associated with each RT region, the position of each sub-device in the stack; the oscillator strengths of these ISB transitions; the energy bandwidth of each transition; and the total length of the RT and I/R regions of each ISB sub-device. In one embodiment, our approach may be used to engineer a gain profile that has peaks at a multiplicity of different wavelengths, thus realizing a multi-wavelength ISB optical source in which the applied electric field self-proportions itself so that each individual ISB sub-device experiences the appropriate field strength for its particular design. Alternatively, the gain profile may be engineered to be relatively flat over a predetermined wavelength range. In another embodiment, our approach may be used to generate a function that compensates for a characteristic of another device. For example, our heterogeneous ISB device may be engineered to have a gain profile that compensates for the loss profile of another device. Alternatively, the gain/loss profile may be engineered to produce a nonlinear refractive index profile in our device that compensates for that of another device (e.g., an optical fiber).
摘要翻译：光学装置包括至少两个不同的子带间（ISB）光学子装置的叠层，其中各个ISB子装置的增益/损耗曲线相互适应或设计，以便产生预定的整体功能组合。我们将此组合设备定义为异构，因为并非所有的单个ISB子设备都是相同的。示例性地，可能受该工程过程影响的各个ISB子设备的参数包括：与每个RT区域相关联的ISB光学跃迁（发射或吸收）的峰值能量，堆叠中每个子设备的位置 ; 这些ISB转换的振荡器强度; 每个过渡的能量带宽; 以及每个ISB子设备的RT和I / R区域的总长度。在一个实施例中，我们的方法可以用于设计在多个不同波长处具有峰值的增益分布，从而实现多波长ISB光源，其中所施加的电场自身比例，使得每个单独的ISB子载波，设备体验其特定设计的适当场强。或者，增益分布可以被设计为在预定波长范围上相对平坦。在另一个实施例中，我们的方法可以用于产生补偿另一设备的特性的功能。例如，我们的异构ISB设备可以被设计为具有补偿另一设备的丢失简档的增益简档。或者，增益/损耗曲线可以被设计为在我们的装置中产生非线性折射率分布，其补偿另一装置（例如，光纤）的折射率分布。

2. 发明授权

US06891187B2 Optical devices with heavily doped multiple quantum wells 失效
标题翻译：具有重掺杂多量子阱的光器件
公开(公告)号：US06891187B2
公开(公告)日：2005-05-10
申请号：US10126282
申请日：2002-04-19
申请人： Alfred Yi Cho , Claire F. Gmachl , Hock Min Ng
发明人： Alfred Yi Cho , Claire F. Gmachl , Hock Min Ng
IPC分类号： H01L29/06 , H01S5/04 , H01S5/10 , H01S5/12 , H01S5/30 , H01S5/323 , H01S5/34 , H01S5/343 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/041 , H01S5/1075 , H01S5/1228 , H01S5/3086 , H01S5/34 , H01S5/3401
摘要： A quantum well structure is provided that includes two or more quantum well layers coupled by at least one barrier layer such that at least one of a piezo-electric field and a pyro-electric field is produced. The quantum well structure is sufficiently doped to cause a Fermi energy to be located between ground states and excited states of the coupled quantum well layers. The quantum well structure can be incorporated into a layered semiconductor to form optical devices such as a laser or optical amplifier.
摘要翻译：提供了量子阱结构，其包括由至少一个阻挡层耦合的两个或更多个量子阱层，使得产生压电场和热电场中的至少一个。量子阱结构被充分掺杂以使费米能量位于耦合量子阱层的基态和激发态之间。量子阱结构可以结合到分层半导体中以形成诸如激光器或光放大器之类的光器件。

3. 发明授权

US07099073B2 Optical frequency-converters based on group III-nitrides 有权
标题翻译：基于III族氮化物的光学变频器
公开(公告)号：US07099073B2
公开(公告)日：2006-08-29
申请号：US10259051
申请日：2002-09-27
申请人： Aref Chowdhury , Hock Min Ng
发明人： Aref Chowdhury , Hock Min Ng
IPC分类号： G02F1/365 , G02F1/377
CPC分类号： G02F1/3775 , B82Y20/00 , G02F1/3556
摘要： An apparatus includes an optical waveguide and an optical filter positioned to receive light from the optical waveguide. The optical waveguide includes a sequence of alternating first and second stripes. The sequence runs along a propagation direction in the optical waveguide. The first and second stripes are formed of different polarization states of a group III-nitride semiconductor. The optical filter removes light of a preselected frequency.
摘要翻译：一种装置包括光波导和定位成接收来自光波导的光的滤光器。光波导包括交替的第一和第二条纹的序列。该序列沿着光波导中的传播方向延伸。第一和第二条纹由III族氮化物半导体的不同极化状态形成。滤光器去除预选频率的光。

4. 发明授权

US06986693B2 Group III-nitride layers with patterned surfaces 有权
公开(公告)号：US06986693B2
公开(公告)日：2006-01-17
申请号：US10397799
申请日：2003-03-26
申请人： Aref Chowdhury , Hock Min Ng , Richart Elliott Slusher
发明人： Aref Chowdhury , Hock Min Ng , Richart Elliott Slusher
IPC分类号： H01J9/04 , H01L29/06
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

5. 发明授权

US08569042B2 DNA structures on ferroelectrics and semiconductors 有权
标题翻译：铁电体和半导体上的DNA结构
公开(公告)号：US08569042B2
公开(公告)日：2013-10-29
申请号：US11064907
申请日：2005-02-23
申请人： Aref Chowdhury , Hock Min Ng , Bernard Yurke
发明人： Aref Chowdhury , Hock Min Ng , Bernard Yurke
IPC分类号： C12M1/34 , C12M1/00 , C12Q1/68 , G01N27/00 , G01N21/00 , H01L21/20 , C07H21/02
CPC分类号： G02B6/124 , B82Y10/00 , B82Y15/00 , B82Y20/00 , G01N33/553 , G01N33/588
摘要： An apparatus includes a substrate and a plurality of DNA oligomers in contact with a top surface of the substrate. The substrate is a polar ferroelectric or a polar compound semiconductor.
摘要翻译：一种装置包括底物和与基底的顶表面接触的多个DNA低聚物。基板是极性铁电体或极性化合物半导体。

6. 发明申请

US20080197358A1 WIDE-BANDGAP SEMICONDUCTOR DEVICES 失效
标题翻译：宽带半导体器件
公开(公告)号：US20080197358A1
公开(公告)日：2008-08-21
申请号：US11676329
申请日：2007-02-19
申请人： Robert Frahm , Hock Min Ng , Brijesh Vyas
发明人： Robert Frahm , Hock Min Ng , Brijesh Vyas
IPC分类号： H01L29/20 , C03B25/00
CPC分类号： C30B29/60 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L27/156 , H01L33/007
摘要： A device 100 comprising a substrate 115 having crystal-support-structures 110 thereon, and a III-V crystal 210. The III-V crystal is on a single contact region 140 of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area 320 of the III-V crystal.
摘要翻译：包括其上具有晶体支撑结构110的衬底115和III-V晶体210的器件100。 III-V晶体位于晶体支撑结构之一的单个接触区域140上。接触区域的面积不超过III-V晶体的表面积320的约50％。

7. 发明授权

US07084563B2 Group III-nitride layers with patterned surfaces 有权
标题翻译：具有图案化表面的III族氮化物层
公开(公告)号：US07084563B2
公开(公告)日：2006-08-01
申请号：US11180350
申请日：2005-07-13
申请人： Aref Chowdhury , Hock Min Ng , Richart Elliott Slusher
发明人： Aref Chowdhury , Hock Min Ng , Richart Elliott Slusher
IPC分类号： H01J1/62 , H01L33/00
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： An apparatus includes a crystalline substrate, a layer of a first group III-nitride located on a planar surface of the substrate, and a layer of a second group III-nitride located over the layer of the first group III-nitride. The first and second group III-nitrides have different alloy compositions. The layer of second group III-nitride may have a pattern of columnar holes or trenches therein. The apparatus may include a plurality of pyramidal field-emitters that include the second group III-nitride.
摘要翻译：一种装置包括晶体衬底，位于衬底的平面表面上的第一III族氮化物层和位于第一III族氮化物层上的第二III族氮化物层。第一和第二III族氮化物具有不同的合金组成。第二III族氮化物的层可以具有柱状孔或其中的沟槽的图案。该装置可以包括多个金字塔形场致发射体，其包括第二III族氮化物。

8. 发明授权

US07952109B2 Light-emitting crystal structures 有权
标题翻译：发光晶体结构
公开(公告)号：US07952109B2
公开(公告)日：2011-05-31
申请号：US11456428
申请日：2006-07-10
申请人： Hock Min Ng
发明人： Hock Min Ng
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/18 , H01L33/20 , H01L33/32
摘要： An apparatus comprising a structure comprising a group III-nitride and a junction between n-type and p-type group III-nitride therein, the structure having a pyramidal shape or a wedge shape.
摘要翻译：一种包括III族氮化物和其中n型和p型III族氮化物之间的结的结构的装置，该结构具有锥形或楔形。

9. 发明授权

US07692198B2 Wide-bandgap semiconductor devices 失效
标题翻译：宽带隙半导体器件
公开(公告)号：US07692198B2
公开(公告)日：2010-04-06
申请号：US11676329
申请日：2007-02-19
申请人： Robert Frahm , Hock Min Ng , Brijesh Vyas
发明人： Robert Frahm , Hock Min Ng , Brijesh Vyas
IPC分类号： H01L29/20
CPC分类号： C30B29/60 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L27/156 , H01L33/007
摘要： A device 100 comprising a substrate 115 having crystal-support-structures 110 thereon, and a III-V crystal 210. The III-V crystal is on a single contact region 140 of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area 320 of the III-V crystal.
摘要翻译：包括其上具有晶体支撑结构110的衬底115和III-V晶体的器件100.III-V晶体位于晶体支撑结构之一的单个接触区域140上。接触区域的面积不超过III-V晶体的表面积320的约50％。

10. 发明申请

US20100304516A1 LIGHT-EMITTING CRYSTAL STRUCTURES 审中-公开
标题翻译：发光晶体结构
公开(公告)号：US20100304516A1
公开(公告)日：2010-12-02
申请号：US12852877
申请日：2010-08-09
申请人： Hock Min Ng
发明人： Hock Min Ng
IPC分类号： H01L33/04 , H01L33/00
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/18 , H01L33/20 , H01L33/32
摘要： A method of manufacturing an apparatus, comprising forming a light-emitting crystalline structure. Forming the light-emitting crystalline structure includes forming a first barrier region on a substrate, the first barrier region having one or more inclined surfaces relative to a planar surface of the substrate. Forming the light-emitting crystalline structure also includes forming a second barrier region over the first barrier region, to form a junction at the inclined surfaces, wherein the first barrier region comprises one of an n-type or p-type semiconductor crystal, and the second barrier region comprises the other of the n-type or p-type semiconductor crystal.
摘要翻译：一种制造装置的方法，包括形成发光晶体结构。形成发光晶体结构包括在基板上形成第一势垒区域，第一势垒区域相对于基板的平面表面具有一个或多个倾斜表面。形成发光晶体结构还包括在第一势垒区域上形成第二势垒区域，以在倾斜表面形成结，其中第一势垒区域包括n型或p型半导体晶体中的一种，并且第二阻挡区域包括n型或p型半导体晶体中的另一个。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式