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1. 发明专利

JPH01137525A MANUFACTURE OF OXIDE SUPERCONDUCTIVE MOLD 失效
公开(公告)号：JPH01137525A
公开(公告)日：1989-05-30
申请号：JP29644887
申请日：1987-11-25
申请人： FURUKAWA ELECTRIC CO LTD , HOKKAIDO ELECTRIC POWER , TOHOKU ELECTRIC POWER CO , TOKYO ELECTRIC POWER CO , ELECTRIC POWER DEV CO
发明人： SHIGA SHOJI , CHO EIKI , HARADA NAKAHIRO , OZAKI MASANORI , HARA CHIKUSHI , MITSUI YUKIO , OGAWA KIYOSHI , YOSHINO SUMITAKA
IPC分类号： C04B41/87 , C01G1/00 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To make a long-scaled oxide superconductive mold mass-produced effectively at a high speed by serially performing a plural times of the following processes repetitively in the similar facility: one process in which a vapor phase precipitation method is used to form a filmy metal component of oxide superconductive elements on a running continuous filament susceptor, and the other process in which the metal film is oxidized. CONSTITUTION:The following processes; one in which a vapor phase precipitation method is used to form a filmy metal component of oxide superconductive elements on a running continuous filament susceptor, and the other process in which the metallic film is oxidized, are performed serially in plural times in the similar facility. Namely this equipment is composed of the following units: a film forming device 1 for use in forming a filmy metal component of a superconductor on a susceptor 4, an oxidation processor 2 in which the metal is oxidized, a pair of turn rolls 3, 3' for use in introducing the susceptor repetitively into the film forming device 1 and the oxidation processor 2, and a coiler 7 for use in winding the superconductive mold 6 manufactured in the device 1, 2. Accordingly the oxide superconductive mold, which is excellent in its superconductive characteristic and long-scaled, can be made to be mass-produced effectively at a high speed.

2. 发明专利

JPH01249607A PRODUCTION OF OXIDE SUPERCONDUCTING FILM 失效
公开(公告)号：JPH01249607A
公开(公告)日：1989-10-04
申请号：JP7708088
申请日：1988-03-30
申请人： FURUKAWA ELECTRIC CO LTD , HOKKAIDO ELECTRIC POWER , TOHOKU ELECTRIC POWER CO , TOKYO ELECTRIC POWER CO , ELECTRIC POWER DEV CO
发明人： SHIGA SHOJI , CHO EIKI , HARADA NAKAHIRO , TAMURA YUICHI , HARA CHIKUSHI , NOZAKI OKAYA , OGAWA KIYOSHI , KURIHARA TAKESHI
IPC分类号： H01L39/24 , C01B13/14 , C01G1/00 , C01G3/00 , C04B41/87 , C23C14/08 , C23C14/58 , C30B29/22 , H01B12/06 , H01B13/00
摘要： PURPOSE:To obtain an oxide superconducting film having high crystal orientation characteristic, superconducting characteristic, etc., quickly by forming a film having orientation characteristic from an oxide superconducting material on a substrate, then executing a stage for forming a thin film with unoriented characteristic and a stage for heat-treating the formed film repeatedly. CONSTITUTION:An oxide superconducting material (e.g., Y-Ba-Cu-O superconductor) is formed to a film shape on a substrate by imparting a specified crystal orientation characteristic to the film. Film of a same oxide superconducting material is formed to

3. 发明专利

JPH04149008A PRODUCTION OF SUPERCONDUCTING MATERIAL 失效
公开(公告)号：JPH04149008A
公开(公告)日：1992-05-22
申请号：JP27326390
申请日：1990-10-15
申请人： FURUKAWA ELECTRIC CO LTD , TOKYO ELECTRIC POWER CO
发明人： SATO ISANORI , HARADA NAKAHIRO , HARA CHIKUSHI , OKANIWA KIYOSHI
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , C23C14/06 , H01B12/06 , H01B13/00
摘要： PURPOSE:To obtain a thin film comprising a superconducting material having high Jc by forming the thin film on a substrate in a manner that in the initial stage of film forming, a single layer of superconducting material is provided under lower gas pressure than the gas pressure used for the growth of the thin film. CONSTITUTION:A superconducting thin film is formed on a metal substrate such as Hastelloy by vapor phase method. In the initial stage of film formation (for

4. 发明专利

JPH02270966A PRODUCTION OF THIN OXIDE SUPERCONDUCTOR FILM 失效
公开(公告)号：JPH02270966A
公开(公告)日：1990-11-06
申请号：JP9023589
申请日：1989-04-10
申请人： FURUKAWA ELECTRIC CO LTD , HOKKAIDO ELECTRIC POWER , TOHOKU ELECTRIC POWER CO , TOKYO ELECTRIC POWER CO
发明人： SATO ISANORI , HARADA NAKAHIRO , OKANIWA KIYOSHI , TAKAHASHI HIROO , OGAWA KIYOSHI
IPC分类号： C23C18/14 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To provide a critical current density of practical magnitude and to attain application to electron device, etc., by subjecting a thin oxide superconductor film formed on a substrate to heat treatment at relatively low temp. and then irradiating the above film with oxygen plasma. CONSTITUTION:A thin oxide superconductor film is formed on a substrate and heat-treated in an oxygen-containing atmosphere at 500-700 deg.C, by which oxygen is incorporated into the thin film to a certain extent. Subsequently, the thin film is put into a vacuum chamber and oxygen plasma is produced by means of a high-frequency electric power source, and the surface of the thin film is irradiated with the above plasma. When plasma irradiation is applied to the above thin-film surface for about 1-5hr, oxygen can be sufficiently incorporated into the thin film and crystal orientational property can be improved. Accordingly, a thin oxide superconductor film having high critical current density value can be obtained.

5. 发明专利

JPH02152110A OXIDE SUPERCONDUCTING COMPACT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02152110A
公开(公告)日：1990-06-12
申请号：JP30725888
申请日：1988-12-05
申请人： FURUKAWA ELECTRIC CO LTD , HOKKAIDO ELECTRIC POWER , TOHOKU ELECTRIC POWER CO , TOKYO ELECTRIC POWER CO
发明人： HARADA NAKAHIRO , SHIGA SHOJI , OKANIWA KIYOSHI , TAKAHASHI HIROO , OGAWA KIYOSHI
IPC分类号： C04B41/89 , C01G1/00 , C23C14/06 , C23C14/08 , C23C16/30 , H01B12/06 , H01B13/00 , H01L39/02 , H01L39/24
摘要： PURPOSE:To obtain excellent superconducting characteristics by constituting a barrier layer with at least three alternate laminations of precious metal and inorganic materials, and making the precious metal layer satisfy the predeter mined condition. CONSTITUTION:An oxide superconducting layer 2 having a complex barrier layer 1 at one side is formed on a substrate 3 in such a way that the pre-cious metal layer 4 of the complex barrier layer 1 comes to the side of the substrate 3, and the complex barrier layer 1 comprises at least three alternate lamination layers of a precious metal layer 4 and an inorganic layer 5. As a substrate 3, it is desirable to use a material enabling minimizing thermal stress in a thermal cycle. For example, Ti, Zr and the like are used as the substrate 3. As the precious metal layer 4 forming the complex barrier layer 1, Ag or an Ag alloy is used. In addition, the thickness of each precious metal layer 4 in the complex barrier layer 1 is less than 1000Angstrom and the sum of the thickness of each precious metal layer 4 in the complex barrier layer 1 is equal to or more than 100Angstrom .

6. 发明专利

JPH01184266A MANUFACTURE OF OXIDE SUPERCONDUCTOR FORMED BODY 失效
公开(公告)号：JPH01184266A
公开(公告)日：1989-07-21
申请号：JP619488
申请日：1988-01-14
申请人： FURUKAWA ELECTRIC CO LTD , HOKKAIDO ELECTRIC POWER , TOHOKU ELECTRIC POWER CO , TOKYO ELECTRIC POWER CO , ELECTRIC POWER DEV CO
发明人： HARADA NAKAHIRO , AKASHITA SHIYOUJI , CHO EIKI , OZAKI MASANORI , HARA TSUKIJI , MITSUI YUKIO , OGAWA KIYOSHI , YOSHINO SUMITAKA
IPC分类号： H01L39/24 , C23C14/06 , C23C16/14 , C23C16/40 , C23C16/54 , C30B29/22 , H01B12/06 , H01B13/00
摘要： PURPOSE:To improve the superconductivity of a formed body by depositing a primary layer of W or Ta on a base material, also depositing a secondary layer of Pt, Pd, etc., and then depositing an oxide superconductor into a filmy state. CONSTITUTION:A metal of W or Ta is deposited as a primary layer in a state oriented in the direction on an amorphous or quasi-amorphous base material. Subsequently, a metal or compound of one kind selected from Pt, Pd, MgO, SrTiO3, and BiTiO3 is deposited as a secondary layer in a state oriented in the direction on the above layer directly or via an Ni layer. Then, on the above secondary layer, an oxide superconductor material is deposited in a state oriented in the direction. The superconductor layer can be formed so that the crystal orientation of high critical current value is oriented in the electrifying direction of the oxide superconductor formed body.

7. 发明专利

JPH01143106A MANUFACTURE OF OXIDE SUPERCONDUCTIVE COMPACT 失效
公开(公告)号：JPH01143106A
公开(公告)日：1989-06-05
申请号：JP29918087
申请日：1987-11-27
申请人： FURUKAWA ELECTRIC CO LTD , HOKKAIDO ELECTRIC POWER , TOHOKU ELECTRIC POWER CO , TOKYO ELECTRIC POWER CO , ELECTRIC POWER DEV CO
发明人： SHIGA SHOJI , CHO EIKI , HARADA NAKAHIRO , OZAKI MASANORI , HARA CHIKUSHI , MITSUI YUKIO , OGAWA KIYOSHI , YOSHINO SUMITAKA
IPC分类号： C23C14/58 , C01B13/32 , C01G1/00 , C01G3/00 , C04B41/87 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To improve the productivity in manufacture of a lengthy material by forming an oxide superconductor component in a film form on a running continuous filament substrate by means of a PVD method to increase oxygen in the film body. CONSTITUTION:A superconductor component is formed in a film form on a substrate by using superconductor materials and precusors to provide a superconductor material, for example, sintered bodies of YBa2.5Cu4.6OX, alloys such as YBa2.2Cu3.3, or compounds such as Y2O3, BaCO3, and CuO, by means of a PVD method such as spattering in vacuum or low O2 pressure atmosphere. Inconveniences such as amorphous tendency of crystals and reduction in film forming speed are avoided by the subsequent O2 increasing treatment. As both steps of film forming 1 and O2 increasing 2 can be conducted under a low pressure condition of the same degree, they are advantageously disposed in the same treating chamber 9 without shielding each other to control the atmosphere locally in each step. Hence, a lengthy oxide superconductive compact excellent in superconducting properties such as critical current density can be efficiently mass-produced at a high speed.

8. 发明专利

JPH01134825A MANUFACTURE OF OXIDE SUPERCONDUCTIVE COMPACT 失效
公开(公告)号：JPH01134825A
公开(公告)日：1989-05-26
申请号：JP29281387
申请日：1987-11-19
申请人： FURUKAWA ELECTRIC CO LTD , HOKKAIDO ELECTRIC POWER , TOHOKU ELECTRIC POWER CO , TOKYO ELECTRIC POWER CO , ELECTRIC POWER DEV CO
发明人： SHIGA SHOJI , CHO EIKI , HARADA NAKAHIRO , HARA CHIKUSHI , MITSUI YUKIO , OGAWA KIYOSHI , YOSHINO SUMITAKA
IPC分类号： C01B13/14 , C01G1/00 , C04B41/87 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To mass-produce a lengthy oxide superconductive compact having an excellent superconductive property at a high efficiency by repeating successively the processes of forming an oxide superconductor in a film form on a substrate in a substantially oxygen free atmosphere, and of oxygenic treating the resulting film-formed body. CONSTITUTION:A hastelloy wire coated by Pt is used as a substrate 4. This substrate 4 which has been preliminarily rolled up round an uncoiler 5 with twisting at 10 turns/m, is sent out from the uncoiler 5 at a constant rate, and subjected to sputter of a superconductive material in a sputtering device 1, using a sintered body of Y0.9Er0.1Ba2.1Cu3.2O7 as a target. The film-formed body is introduced into a plasma oxidizing furnace 2 through a turn roll 3 for oxidation treatment and then again introduced into the sputtering device 1 through a turn roll 13 for sputtering. The film forming step and the oxidation treatment step are repeated 50 times to make a superconductive compact 6, which is rolled up round a coiler 7 and further undergoes oxidation treatment.

9. 发明专利

JPH01115009A OXIDE SUPERCONDUCTING COMPACT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH01115009A
公开(公告)日：1989-05-08
申请号：JP27273687
申请日：1987-10-28
申请人： FURUKAWA ELECTRIC CO LTD , HOKKAIDO ELECTRIC POWER , TOHOKU ELECTRIC POWER CO , TOKYO ELECTRIC POWER CO , ELECTRIC POWER DEV CO
发明人： SHIGA SHOJI , MIMURA MASANAO , HARADA NAKAHIRO , OZAKI MASANORI
IPC分类号： C01G3/00 , C01G1/00 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To enable the long and stable maintenance of high performance against chemical and mechanical stresses by forming the layer of transition metal or the alloy thereof having 0.001mum to 0.5mum thickness and the layer of precious metal or the alloy thereof having 0.05mum to 3mum thickness in turn on an oxide superconductor layer. CONSTITUTION:An amorphous oxide superconductor layer is formed on a substrate and then the layer of transition metal or the alloy thereof having 0.001mum to 0.5mum thickness and the layer of precious metal or the alloy thereof having 0.05mum to 3mum are formed in turn thereon. Thereafter, the substrate having the aforesaid layers is subjected to heating treatment in an atmosphere containing oxygen. As a method for forming a superconductor material on the substrate in a film form, there are several alternatives including a sputtering method, a vacuum vapor deposition method, an ion plating method and an MOCVD method. The same material as the superconductor material or elements constituting the material, the oxide thereof and the like are used as a target for the method. According to the aforesaid process, high performance can be maintained stably for a long period with resistance against mechanical and thermal stresses and strains, and without any secular change.

10. 发明专利

DE69025237D1 未知
公开(公告)号：DE69025237D1
公开(公告)日：1996-03-21
申请号：DE69025237
申请日：1990-07-24
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , HARADA NAKAHIRO , YAMAMOTO KIYOSHI C O THE FURUK , SATO KOKI
IPC分类号： H05K3/46 , H01B12/06 , H01L39/24
摘要： A superconductive multilayer circuit has a substrate, a first circuit layer (14) formed on the substrate and having a circuit part (11) formed of a superconductive material and a non-circuit part (13) formed of a simulant of the superconductive material, and at least one second circuit layer (17) formed on the first circuit layer (14), having a circuit part (15) formed of a superconductive material and a non-circuit part (16) formed of a simulant of the superconductive material. A method for manufacturing a superconductive multilayer circuit has a first thin film forming step for forming a thin film, which is composed of a superconductive material or a smaller material thereto, on a substrate, a first circuit layer (14) forming step for forming a superconductive circuit by discharging a specific component from a predetermined part of the thin film or implanting the component in the thin film, a second thin film forming step for forming a thin film, which is composed of a superconductive material or the simulant thereto, on the first circuit layer(14), and a second circuit layer (17) forming step for forming a superconductive circuit by removing a specific component from a predetermined part of the thin film or implanting the component in the thin film.

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