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1. 发明专利

JPS60241051A POSITIVE TYPE RESIST DEVELOPING SOLUTION 失效
公开(公告)号：JPS60241051A
公开(公告)日：1985-11-29
申请号：JP9694584
申请日：1984-05-15
申请人： FUJITSU LTD
发明人： MIYAGAWA MASASHI , YONEDA YASUHIRO , NISHII KOUTA , FUKUYAMA SHIYUNICHI
IPC分类号： G03F7/30 , G03F7/32
摘要： PURPOSE:To clarify the border between unexposed areas and exposed areas and to prevent residues on developed areas by mixing alcohol with a developing soln. made of an inorg. or org. alkali for developing a positive type resist composed essentially of an alkali-soluble resin. CONSTITUTION:Alcohol, such as methanol or ethanol, is mixed with the developing soln. made of at least one among the inorg. or org. alkali as developing soln. of the positive type resist composed essentially of the alkali-soluble resin. The addition of such an alcohol to the developing soln. can activate the surface of the resist, allows it not to repel the developing soln., promotes hydrolysis of ester, solubilizes it, and thus, enhances development performance.

2. 发明专利

JPS60263145A FORMATION OF POSITIVE TYPE RESIST PATTERN 失效
公开(公告)号：JPS60263145A
公开(公告)日：1985-12-26
申请号：JP12029984
申请日：1984-06-12
申请人： FUJITSU LTD
发明人： YONEDA YASUHIRO , MIYAGAWA MASASHI , NISHII KOUTA , FUKUYAMA SHIYUNICHI
IPC分类号： G03F7/26 , G03C1/72 , G03C5/00 , G03F7/039 , G03F7/075 , G03F7/09 , H01L21/027
摘要： PURPOSE:To form a positive type resist pattern high in aspect ratio on the substrate high in level difference to be processed by etching the lower resist layer through the resist layer made of a mixture of a bridgeable methacrylate polymer and a phenyl silicone resin as a mask. CONSTITUTION:A flattened layer 2 is formed on the roughened substrate 1 to be processed. The resist layer 3 is formed on the layer 2 by coating it with a resist soln. prepared by mixing a copolymer of methyl methacrylate and methacrylic acid with a terpolymer of methyl methacrylate, methacrylic acid, and methacryloyl chloride, in amts. equal to each other, adding a hydrolyzed polycondensate of trichlorophenylsilane (partial ladder phenyl silicone resin) to the obtained bridgeable resist in an amt. of 25wt%, and dissolving them in cyclohexanone. The resist layer 3 is selectively exposed to electron beams, developed to open a window 4, and etched with oxygen plasma to transfer the pattern of the resist layer 3 to the flattened layer 2.

3. 发明专利

JPS60254034A FORMATION OF PATTERN 失效
公开(公告)号：JPS60254034A
公开(公告)日：1985-12-14
申请号：JP10850884
申请日：1984-05-30
申请人： FUJITSU LTD
发明人： NISHII KOUTA , YONEDA YASUHIRO , MIYAGAWA MASASHI , FUKUYAMA SHIYUNICHI
IPC分类号： G03F7/004 , G03F7/038 , G03F7/075 , G03F7/11 , H01L21/027
摘要： PURPOSE:To permit an intermediate layer to be rapidly hardened at low temp. by using a combination of organopolysilsesquioxane and a specified cross-linking agent as the intermediate layer in forming a resist pattern by using 3-layer resist films. CONSTITUTION:The intermediate layer of the 3-layer resist films contains a mixture of organopolysilsesquioxane represented by formula I and polydialkoxysiloxane represented by formula II. In formulae I and II, R1 and R2 are each optionally substd. lower alkyl or optionally substd. aryl, and each may be same or different. Organopolysesquioxane is preferably examplified by polymethylsilsesquioxane, and polydialkoxysiloxane is, preferably, embodied by polydiethoxysiloxane, and the cross-linking agent is, preferably, used in an amt. of 5-20wt% of organopolysesquioxane.

4. 发明专利

JPS60254642A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60254642A
公开(公告)日：1985-12-16
申请号：JP10945384
申请日：1984-05-31
申请人： FUJITSU LTD
发明人： NISHII KOUTA , YONEDA YASUHIRO , MIYAGAWA MASASHI , FUKUYAMA SHIYUNICHI
IPC分类号： H01L23/26 , H01L23/29 , H01L23/31 , H01L23/30
摘要： PURPOSE:To improve the reliability by inhibiting the corrosion of aluminum wirings, etc. by a method wherein chlorine ions which is the impurity in the epoxy resin are trapped by adding a small amount of ion exchange resin in the epoxy resin composite for resin sealing. CONSTITUTION:A portion of 0.5-10wt% of ion exchange resin having cation exchange power which traps cations of chlorine or the like is added to an expoxy resin, such as bisphenol A type epoxy resin or cresol novolak type epoxy resin, having two or more of epoxy radicals in a molecule and containing 10ppm or less of chlorine ions and 0.1wt% or less of hydrolytic chlorine. Further, the hardener, hardening promotor, and inorganic filler are added and kneaded into the preparation of a molding resin 3. Besides, a semiconductor chip 1 is mounted on a ceramic substrate 2 and sealed with the resin 3.

5. 发明专利

JPS60254035A FORMATION OF PATTERN 失效
公开(公告)号：JPS60254035A
公开(公告)日：1985-12-14
申请号：JP10851884
申请日：1984-05-30
申请人： FUJITSU LTD
发明人： YONEDA YASUHIRO , MIYAGAWA MASASHI , NISHII KOUTA , FUKUYAMA SHIYUNICHI
IPC分类号： G03F7/004 , G03F7/038 , G03F7/075 , H01L21/027
摘要： PURPOSE:To enhance dry etching resistance without impairing sensitivity and resolution property by using 2-layer resist films composed of upper and lower layers each made of a specified substance in forming a negative type resist pattern by using ionizing radiation rays. CONSTITUTION:The lower resist layer made of a material etchable with oxygen plasma and high in dry etching resistance is formed on the layer to be worked, such as a silicon wafer, and then on this layer, the upper layer made of polysilsesquioxane represented by formula (I), R1-R4 are independent of each other, each of them is phenyl, halophenyl, or halomethylphenyl, and at least one of them is halophenyl or halomethylphenyl, and n is a polymn. degree. A resist pattern is formed in the upper layer by patternwise exposing the upper layer to ionizing radiation, such as electron beams, X-rays, or ion beams, and developing it. The pattern is transferred to the lower layer by etching the lower layer by using this pattern of the upper layer as a mask. The lower layer is made of a phenol, polyimide, or polystyrene resin, or the like.

6. 发明专利

JPS60247640A FORMATION OF NEGATIVE TYPE RESIST PATTERN 失效
公开(公告)号：JPS60247640A
公开(公告)日：1985-12-07
申请号：JP10524484
申请日：1984-05-24
申请人： FUJITSU LTD
发明人： YONEDA YASUHIRO , MIYAGAWA MASASHI , NISHII KOUTA , FUKUYAMA SHIYUNICHI
IPC分类号： G03F7/038 , G03C5/00 , G03F7/095 , G03F7/26
摘要： PURPOSE:To enable a micropattern to be formed on a stepped substrate to be processed without impairing the substrate by using a resist of two-layer structure. CONSTITUTION:A negative type electron beam resist high in absorption of UV rays, especially, in 200-300nm is used for the upper resist, and another photoresist not sensitive to ionizing radiation, such as electron beams, but sensitive to UV rays is used for the lower resist. A resist prepared by adding a quinonediazide compd. to a cresol novolak resin is formed on the rugged surface of the substrate to be processed as the lower layer, and a polyarylacetylene resist as the upper layer is formed on the lower layer to prepare a two-layer type resist in coating said substrate with an electron beam resist to form a resist pattern high in aspect ratio. The upper resist is selectively exposed to ionizing radiation sna developed to form a pattern, and this pattern of the upper layer is transferred to the lower resist by exposing it to UV rays, and developed to form the same pattern.

7. 发明专利

JPS60254040A FORMATION OF PATTERN 失效
公开(公告)号：JPS60254040A
公开(公告)日：1985-12-14
申请号：JP10850984
申请日：1984-05-30
申请人： FUJITSU LTD
发明人： MIYAGAWA MASASHI , YONEDA YASUHIRO , NISHII KOUTA , FUKUYAMA SHIYUNICHI
IPC分类号： G03F7/004 , G03C1/72 , G03F7/039 , G03F7/075 , H01L21/027
摘要： PURPOSE:To satisfy all the requirements of sensitivity, resolution, and dry etching resistance, and to obtain a positive type resist high in aspect ratio by using two-layer resist film having the upper layer contg, a copolymer having specified repeating units as a resist composition. CONSTITUTION:The lower layer resist layer made of a phenol, polystyrene, or polyimide resin, is formed on the surface of a substrate to be worked, such as a silicon wafer, and then, the upper layer resist film is formed by thinly coating the lower layer with a soln. of a copolymer having repeating units represented by formula I or II in which m, n are each a number of repeating units, and m/ (m+n)=0.1-0.9; and hardening coating soln. The upper resist film is patternwise exposed to ionizing radiation rays and the solubilized areas of the upper layer are dissolved off by development, and the lower layer is etched by using the obtained upper layer resist film as a mask to transfer the pattern to the lower layer resist film.

8. 发明专利

JPS60254036A FORMATION OF PATTERN 失效
公开(公告)号：JPS60254036A
公开(公告)日：1985-12-14
申请号：JP10852184
申请日：1984-05-30
申请人： FUJITSU LTD
发明人： FUKUYAMA SHIYUNICHI , YONEDA YASUHIRO , MIYAGAWA MASASHI , NISHII KOUTA
IPC分类号： G03F7/004 , C08G77/04 , G03F7/038 , G03F7/075 , H01L21/027
摘要： PURPOSE:To remarkably enhance sensitivity by using a combination of of specified polysilsesquioxane and an aromatic bisazido cross-linking agent as the upper layer resist of the two-layer resist film. CONSTITUTION:A negative type resist pattern is formed by using two-layer resist film consisting of upper and loser layers by using radiation rays. The upper layer is composed of a mixture system of polysilsequioxane represented by formula (I) in which (R1-R4 are independent of each other and each is optionally an substd. methyl or vinyl group), and an aromatic bisazido compd., such as 2,6-bis(4'-azidobenzal)acetone or 2,6-(4-azidobenzylidene)(methyl)cyclohexane. Said bisazido comp. is used in an amt. of 1-30wt% of polysilsequioxane, and if it is out of this range, sufficient cross-linking effect, that is, a sensitization function can not be exhibited. Phenol, polyimide, and polystyrene resin, etc., are used for the lower layer.

9. 发明专利

JPS60230136A POSITIVE TYPE RESIST COMPOSITION 失效
公开(公告)号：JPS60230136A
公开(公告)日：1985-11-15
申请号：JP8663284
申请日：1984-04-28
申请人： FUJITSU LTD
发明人： MIYAGAWA MASASHI , YONEDA YASUHIRO , NISHII KOUTA , FUKUYAMA SHIYUNICHI
IPC分类号： G03F7/004 , G03C1/72 , G03F7/039 , H01L21/027
摘要： PURPOSE:To enhance dry etching resistance and to improve sensitivity and resolution by defining the use range of esterification degree and mol.wt. of the ester produced from an alkali-soluble resin and an aromatic sulfonic acid by the fractional precipitation method. CONSTITUTION:When the ester is produced from the alkali-soluble resin and the aromatic sulfonic acid, the ranges of the esterification degree and the mol.wt. of the product to be used are defined. As such a ester, polyvinylphenol p-toluenesulfonate (VTE) obtained from polyvinylphenol (PVP) and p-toluenesuofonic acid (p-TS) has the main chains of a large number of molecules aligned in a straight chain, and the side chains are formed by the combinations of the -C6H5 groups and the p-TS groups. Such VTE esters are decomposed at the ester bonds by irradiating electron beams and solubilized in alkali, thus exhibiting the characteristics of the positive type resist. Moreover, this VTE has excellent dry etching property.

10. 发明专利

JPS60254132A PATTERN FORMING MATERIAL 失效
公开(公告)号：JPS60254132A
公开(公告)日：1985-12-14
申请号：JP10950384
申请日：1984-05-31
申请人： FUJITSU LTD
发明人： FUKUYAMA SHIYUNICHI , YONEDA YASUHIRO , MIYAGAWA MASASHI , NISHII KOUTA
IPC分类号： G03C7/10 , G03F7/038 , G03F7/075 , H01L21/027
摘要： PURPOSE:To form a pattern good in heat stability by silylating intramolecular hydroxyl groups remaining unreacted after condensation reaction of 3-functional siloxane and removing them to form polysilylsesquioxane. CONSTITUTION:A pattern forming material is prepared by silylating polysilsesquioxane having unreacted hydroxide groups remaining in the molecule represented by formula I (in which R1-R4 are each alkyl, such as methyl, chloromethyl, or ethyl, or aryl, such as phenyl or chlorophenyl), with a silylating agent, such as formula II, X being halogen, to bring the hydroxyl groups of the compd. of formula I into reaction with the halogen of the compd. of formula II and to release them in the form of hydrogen halide. This material can form a thermally stable pattern while retaining high sensitivity, high resolution, etc., of the silicone resin.

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