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1. 发明申请

WO1992012408A1 PRESSURE SENSOR 审中-公开
标题翻译：压力传感器
公开(公告)号：WO1992012408A1
公开(公告)日：1992-07-23
申请号：PCT/DE1992000016
申请日：1992-01-10
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , PLÖCHINGER, Heinz , OFFEREINS, Henderikus, L. , SANDMAIER, Hermann
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： G01L09/00
CPC分类号： G01L9/0073 , G01L19/147
摘要： A pressure sensor has a first and second sensor body (2, 3). The first sensor body (2) has a first recess (4) on the rear which defines a diaphragm region (6). The second sensor body (3) has a second rear recess (9) and its rear is connected to the front of the first sensor body (2) to form a pressure sensor chamber (12). In order to increase the overload resistance of the pressure sensor, the second sensor body (3) has overload contact devices which are arranged in such a way that the edge (24) of the diaphragm region (6) contacts said devices, at least when an overload pressure exceeding the measuring pressure is applied to the diaphragm region (6), said devices (13, 20, 21) having a smaller mutual distance (b) in the diaphragm direction compared with the lateral extent (a) of the diaphragm region (6) between the etched notches (8) of the first rear recess (4) in the first sensor body (2).
摘要翻译：压力传感器具有第一和第二传感器体（2,3）。第一传感器体（2）在其后部具有限定膜片区域（6）的第一凹部（4）。第二传感器体（3）具有第二后凹部（9），并且其后部连接到第一传感器主体（2）的前部，以形成压力传感器室（12）。为了增加压力传感器的过载阻力，第二传感器体（3）具有过载接触装置，其以使得隔膜区域（6）的边缘（24）接触所述装置的方式布置，至少在超过测量压力的过载压力被施加到膜片区域（6）上，与膜片区域的横向范围（a）相比，在膜片方向上具有较小相互距离（b）的装置（13,20,21）（6）在第一传感器体（2）中的第一后凹部（4）的蚀刻缺口（8）之间。

2. 发明申请

WO1991009288A1 SENSOR FOR MEASURING FORCE AND/OR TRAVEL AND PROCESS FOR ITS MANUFACTURE 审中-公开
标题翻译：用于测量力和/或行程的传感器及其制造方法
公开(公告)号：WO1991009288A1
公开(公告)日：1991-06-27
申请号：PCT/DE1990000825
申请日：1990-10-29
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , OFFEREINS, Henderikus, L. , SANDMAIER, Hermann
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： G01L01/18
CPC分类号： G01L1/183 , G01L1/18 , H01L2924/0002 , H01L2924/00
摘要： In a process for manufacturing a sensor for measuring a force and/or a travel which has a sensor body (2, 2') with an operating region (3) having a bellows structure, the following steps are performed: application of etchproof coatings on both sides of the main surfaces of a semiconductor wafer; making apertures in both coatings by a photoresist process; anisotropic etching of essentially V-shaped recesses on both sides of the semiconductor wafer; and dividing the semiconductor wafer into the individual sensor bodies (2, 2').

3. 发明申请

WO1992021883A1 MICROMINIATURIZED ELECTROSTATIC PUMP AND DEVICE FOR DETERMINING THE FLOW RATE OF A GAS OR LIQUID 审中-公开
标题翻译：用于确定气体或液体的流速的微静电静电泵和装置
公开(公告)号：WO1992021883A1
公开(公告)日：1992-12-10
申请号：PCT/DE1992000409
申请日：1992-05-15
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , HOFMANN, Klaus , RICHTER, Axel , SANDMAIER, Hermann , PLETTNER, Andreas
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： F04F11/00
CPC分类号： F04F99/00 , B05B5/16 , G01F1/7088 , H01J41/18 , H02N11/006
摘要： A microminiaturized electrostatic pump has at least two spaced apart electrodes (10', 11') and one electrode supporting body (2'). A device for determining the flow rate of a gas or liquid also has at least two spaced apart electrodes (10', 11') and one electrode supporting body (2'). In order to simplify the production of such a device or pump, both electrodes (10', 11') are arranged on the main surfaces of a common electrode supporting body (2') that is insulated from at least one of the two electrodes (10', 11') and is provided with a throughflow opening that is substantially vertical to its main surfaces.
摘要翻译：微型静电泵具有至少两个间隔开的电极（10'，11'）和一个电极支撑体（2'）。用于确定气体或液体的流速的装置还具有至少两个间隔开的电极（10'，11'）和一个电极支撑体（2'）。为了简化这种装置或泵的生产，将两个电极（10'，11'）布置在与两个电极中的至少一个绝缘的公共电极支撑体（2'）的主表面上 10'，11'）并且设置有大致垂直于其主表面的通流开口。

4. 发明申请

WO1994009176A1 DEVICE FOR PLASMA-SUPPORTED ELECTRON BEAM HIGH-RATE VAPOUR DEPOSIITION 审中-公开
标题翻译： DEVICE等离子辅助电子HOCHRATEBEDAMPFEN
公开(公告)号：WO1994009176A1
公开(公告)日：1994-04-28
申请号：PCT/DE1993000750
申请日：1993-08-18
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , NEUMANN, Manfred , SCHILLER, Siegfried , MORGNER, Henry
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： C23C14/32
CPC分类号： C23C14/10 , C23C14/32 , H01J37/3053 , H01J37/3266 , H01J2237/3137
摘要： It is known that improved coating properties can be obtained by plasma action in vacuum deposition, especially by vaporisation. Substantially higher coating rates can be attained in vapour deposition, but, with high plasma densities, they result in excessive scattering of the electron beam and reduce the power density. According to the invention, a plasma source, preferably a hollow cathode arc source, is arranged in the immediate vicinity of the substrate. Between the evaporator and the substrate there is a device for generating a magnetic field so that the region of high plasma density is separated from the evaporator and the electron beam by the magnetic field. The boundary field lines of this magnetic field run along an arc curving with respect to the substrate.

5. 发明申请

WO1994008076A1 HETEROEPITAXIALLY DEPOSITED DIAMOND 审中-公开
标题翻译：异质僻静DIAMOND
公开(公告)号：WO1994008076A1
公开(公告)日：1994-04-14
申请号：PCT/DE1993000936
申请日：1993-10-01
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , DAIMLER BENZ AG , KLAGES, Claus-Peter , JIANG, Xin , FÜSSER, Hans-Jürgen , HARTWEG, Martin , ZACHAI, Reinhard , RÖSLER, Manfred
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , DAIMLER BENZ AG
IPC分类号： C30B25/02
CPC分类号： C23C16/274 , C23C16/0209 , C30B25/105 , C30B29/04 , H01L21/02381 , H01L21/02527 , H01L21/0262 , H01L21/02661
摘要： The invention pertains to a process for producing heteroepitaxial diamond layers on Si substrates by means of chemical vapor deposition and common process gases, wherein (a) the Si surface is pretreated by creating a vacuum and heating the Si substrate to temperatures greater than 300 C, preferably between 600 and 1100 C; (b) a nucleation phase is carried out with a negative bias voltage applied in the range of -60 to -300 volts at a substrate temperature of 400 to 1100 C; (c) the diamond deposition is carried out under per se known conditions without applying a bias voltage.

6. 发明申请

WO1994006943A1 PROCESS FOR CHANGING THE MICROSTRUCTURE OF METALLIC RAILS 审中-公开
标题翻译：方法为了改变金属棒材的结构结构
公开(公告)号：WO1994006943A1
公开(公告)日：1994-03-31
申请号：PCT/DE1993000907
申请日：1993-09-22
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , THYSSEN STAHL AG
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , THYSSEN STAHL AG , KÜPPER, Frank , WISSENBACH, Konrad , SCHMEDDERS, Herbert
IPC分类号： C21D09/04
CPC分类号： C21D9/04 , B23K15/0006 , C21D1/09
摘要： A process is disclosed for changing the local microstructure at the surface of the head of a metallic rail in the solid phase. The microstructure is changed by applying energy only within a limited local marginal layer located directly below the stressed running and wearing surfaces of the rail head by high-energy radiation. The amount of energy absorbed by the rail at the processing site is controlled by said high-energy radiation in such a way that the local microstructure in the marginal layer at the processing site is cooled in an adequately controlled way.

7. 发明申请

WO1994005446A1 ROLLING DEVICE FOR PRODUCING CORRUGATED PIECES MADE OF A METALLIC MATERIAL 审中-公开
标题翻译：滚动装置，用于生产金属材料波浪WORKPIECES
公开(公告)号：WO1994005446A1
公开(公告)日：1994-03-17
申请号：PCT/EP1993002343
申请日：1993-08-30
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , LORENZ, Bernd , ECK, Christoph
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： B21H01/18
CPC分类号： B21H1/18
摘要： A rolling device for producing corrugated workpieces made of a metallic material has two flat jaws which can be synchronically moved towards each other in parallel planes, tangentially to a workpiece revolving around its longitudinal axis. The object of the invention is to provide a device for purposefully shaping non rotationally symmetrical sections in the corrugated workpieces with respect to their longitudinal axis. For that purpose, at least one rolling block (3), whose width is smaller than the total length of the workpiece (1), whose length rolling in the circumferential direction on the workpiece (1) is smaller than or equal to half the circumference of the workpiece, and whose height corresponds to a predetermined eccentricity, is provided on a flat jaw (2b). When the flat jaws are moved, the rolling block (3) displaces the material of the workpiece (1) heated up to an appropriate forging temperature of the material. The displacement of the material leads to the formation of a non rotationally symmetrical section and at the same time to a change in the length of the workpiece, or when the workpiece is laterally limited, to corrugations of the workpiece.

8. 发明申请

WO1993025725A1 PROCESS FOR DEPOSITING SMOOTH POLYCRYSTALLINE LAYERS 审中-公开
标题翻译：法分离平滑的多晶层的
公开(公告)号：WO1993025725A1
公开(公告)日：1993-12-23
申请号：PCT/DE1993000505
申请日：1993-06-08
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , WILD, Christoph , KOIDL, Peter , MÜLLER-SEBERT, Wolfgang , WALCHER, Herbert , ECKERMANN, Thomas
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： C23C16/26
CPC分类号： C23C16/27 , C23C16/02 , C23C16/279 , C23C16/52 , C30B25/02 , C30B29/04
摘要： A process for depositing smooth polycrystalline layers, especially diamond layers, comprises two steps. In a first step the crystal direction of an octahedron (8, 38) is grown with a growth parameter alpha of about 3, preferably over a layer thickness of between 400 and 600 times the mean seed distance on the substrate. In a second step, by reducing the growth parameter alpha , surfaces are generated perpendicularly to this crystal direction and enlarged until they completely cover the surface of the polycrystalline layer. Here, the growth parameter alpha is given by alpha = V100/V111 2ROOT 3, the growth rates of the crystal on {100} and {111} surfaces being given by V100 and V111. This two-step process makes it possible to produce smooth polycrystalline diamond layers in millimetre thicknesses with a roughness in the 100 nanometre range.

9. 发明申请

WO1993025604A1 SILICON BASED LACQUER, ITS USE AS A SUBSTRATE COATING AND SUBSTRATES THUS OBTAINED 审中-公开
标题翻译：硅基漆，其作为底漆和基材使用
公开(公告)号：WO1993025604A1
公开(公告)日：1993-12-23
申请号：PCT/EP1993001428
申请日：1993-06-05
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , E.I. DU PONT DE NEMOURS AND COMPANY , POPALL, Michael , SCHULZ, Jochen , OLSOWSKI, Birke , PILZ, Monika
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , E.I. DU PONT DE NEMOURS AND COMPANY
IPC分类号： C08G77/22
CPC分类号： H01G2/12 , C08G77/06 , C08G77/22 , C09D183/04 , H05K3/285 , Y10T428/31663
摘要： The present invention relates to a lacquer obtained by the process comprising the steps of: (i) precondensation of: a) 1 to 10 mol % of at least one silane of the formula SiR4; b) 20 to 94 mol % of at least one organic silane of the formula R'm(R''Y)nSiX(4-m-n); c) 5 to 30 mol % of at least one organic silane of the formula R'pSiX4-p; d) optionally 0 to 10 mol % of at least one low-volatility metal oxide; and (ii) hydrolysis condensation of the precondensate of step (i) in the presence of the stoichiometric amount of water. The present invention also relates to a process for the obtention of a coating on substrates which comprises the steps of applying the lacquer and curing same. The invention also relates to the thus-coated substrates.

10. 发明申请

WO1993019536A1 DATA COMPRESSION PROCESS DURING STORAGE AND/OR TRANSMISSIOIN OF DIGITAL AUDIO SIGNALS FOR STUDIO APPLICATIONS WITH PERCEPTIVE CODING AND VARIABLE LENGTH CODE 审中-公开
标题翻译：数字压缩过程在存储和/或传输数字音频信号的工作场所应用与识别编码和可变长度代码
公开(公告)号：WO1993019536A1
公开(公告)日：1993-09-30
申请号：PCT/DE1993000177
申请日：1993-02-25
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , BRANDENBURG, Karl-Heinz , HERRE, Jürgen , SEITZER, Dieter
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： H04B01/00
CPC分类号： H04H20/95 , H03M7/42
摘要： A data compression process is disclosed for the storage and/or transmission of digital audio signals. Known processes, such as ASPEC, allow high quality music to be transmitted in a data stream that contains less than 10 % of the information contained in the data stream used in a CD. Known compression processes do not measure up, however, to the requirements of the professional studio technology, as the subsequent processing of the audio signals that takes place in the studio leads to audible disturbances. The disclosed process is insensitive to subsequent processing, such as tandem coding, mixing or fading. To achieve this insensitivity, the transposition of the audio signal from the time domain to the frequency domain is carried out with perfect reconstruction by means of a filter bank, the psychoacoustic masking effect is utilised to an essentially less extent, and a cascade multidimensional Huffman code is used for coding variable word lengths. This process allows audio signals destined to be used in studio technology to be transmitted at a data rate of 192 kbit/sec per channel.

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