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1. 发明申请

WO1991006839A1 INTEGRATABLE TEMPERATURE SENSOR CIRCUIT 审中-公开
标题翻译：可集成的温度传感器电路
公开(公告)号：WO1991006839A1
公开(公告)日：1991-05-16
申请号：PCT/DE1990000607
申请日：1990-08-06
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , DALSASS, Karl-Günther , HOSTICKA, Bedrich
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： G01K07/00
CPC分类号： G01K7/01 , G05F3/262
摘要： An integratable temperature sensor circuit (1; 1') has a first current level circuit (M1, M2; M1', M2') and a second circuit (M3, M4; M3', M4') complementary thereto. To increase the temperature sensitivity of the temperature sensor circuit there are, in a first embodiment, in series with the second circuit (M3, M4), a first and second series circuit, each having a resistor (R1, R2) and a diode (D1, D2). An integratable temperature sensor circuit has a first current level circuit having a first and second FET, a second circuit complementary to the current level circuit having a third and fourth FET and connected with the first current level circuit to a first and second node. To increase the temperature sensitivity of the integratable temperature sensor circuit with a simple circuit structure, a second embodiment has a first resistor (R2') between a node of the second circuit (M3', M4') and a reference potential node (VSS') and an output terminal and a second resistor (R1') connected to a further node of the second complementary circuit (M3', M4') and the reference potential node (VSS'), whereby also the FETs (M1', M2') of the first current level circuit and those (M3', M4') of the second, complementary, circuit are run in their saturation region and the output terminal (VOUT') of the temperature sensor circuit is in actual connection with the first or second node (1', 2').
摘要翻译：可集成的温度传感器电路（1; 1'）具有与其互补的第一电流电平（M1，M2; M1'，M2'）和第二电路（M3，M4; M3'，M4'）。为了提高温度传感器电路的温度灵敏度，在第一实施例中，与第二电路（M3，M4）串联的第一和第二串联电路分别具有电阻器（R1，R2）和二极管（ D1，D2）。可集成温度传感器电路具有第一电流电平电路，其具有第一和第二FET，与电流电平互补的第二电路具有第三和第四FET并与第一电流电平连接到第一和第二节点。为了以简单的电路结构提高可积分温度传感器电路的温度灵敏度，第二实施例在第二电路（M3'，M4'）的节点和参考电位节点（VSS'）之间具有第一电阻器（R2'），）和连接到第二互补电路（M3'，M4'）和参考电位节点（VSS'）的另一节点的输出端子和第二电阻器（R1'），由此FET（M1'，M2' ）和第二互补电路的那些（M3'，M4'）在其饱和区域中运行，并且温度传感器电路的输出端子（VOUT'）实际上与第一或第二电路第二节点（1'，2'）。

2. 发明申请

WO1994006200A1 RECTIFIER CIRCUIT 审中-公开
标题翻译：整流电路
公开(公告)号：WO1994006200A1
公开(公告)日：1994-03-17
申请号：PCT/EP1993002429
申请日：1993-09-08
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , HAMMERSCHMIDT, Dirk , HOSTICKA, Bedrich , DALSASS, Karl-Günther
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： H02M07/217
CPC分类号： G05F1/563 , H02M7/217 , H02M7/2173
摘要： An integrated rectifier circuit has two input terminals (1, 2) to which an alternating voltage source (A) can be connected, two output terminals (3, 2) for supplying a rectified voltage, a series regulating transistor (M1) whose regulated current path is connected between an input terminal and an output terminal (3), and a control circuit for controlling the series regulating transistor (M1) having an inverter circuit (1NV; M2, M3) constituted by a series connection between a FET (M2) of a first conductivity type and a FET (M3) of a second conductivity type. The series connection between the FETs (M2, M3) is linked to both output terminals (3, 2) of the rectifier circuit, and the gates of both FETs (M2, M3) are linked to each other and to the input terminal (1) of the rectifier circuit to which the series regulating transistor (M1) is connected. The common node (K) of both FETs (M2, M3) is linked to the control electrode of the series regulating transistor (M1). The control circuit has a further FET (M4) whose drain-source section is parallel to the drain-source section of one of the series-connected FETs (M2, M3). The gate of said FET (M4) receives a voltage (Vreg) which allows the conducting state d.c. resistance of the series regulating transistor (M1) to be regulated. All transistors (M1, M2, M3, M4) of the rectifier circuit are designed as monolithic integrated circuits.

3. 发明申请

WO1991020135A1 PROCESS AND SYSTEM FOR TRANSMITTING ENERGY AND DATA 审中-公开
标题翻译：发送能量和数据的过程和系统
公开(公告)号：WO1991020135A1
公开(公告)日：1991-12-26
申请号：PCT/DE1991000480
申请日：1991-06-05
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , KÜHN, Jürgen , DALSASS, Karl-Günther , SCHERER, Klaus , VOLKWEIN, Bernd
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： H04B05/00
CPC分类号： H04B5/0025 , G06K7/082 , H04B5/0031 , H04B5/0037
摘要： In a process for transmitting energy from a main unit (2) to an auxiliary unit (3) and for transmitting data bidirectionally between these units, energy is transmitted from the main unit (2) to the auxiliary unit (3) in the form of an alternating supply signal of predetermined frequency which generates a timing signal. A first data signal is transmitted from the main unit (2) to the auxiliary unit (3). On reception of the first data signal, a time window in the auxiliary unit (3) is generated on a time basis determined by the timing signal. The number of vibrations of the first data signal within the time window is measured and used to derive the value of the transmitted first data, whereupon a second data signal istransmitted back from the auxiliary unti (3) to the main unit (2).

4. 发明申请

WO1990013793A1 CIRCUIT AND PROCESS FOR MEASURING A VALUE AFFECTING THE CAPACITANCE-VOLTAGE CHARACTERISTIC OF A CAPACITIVE COMPONENT 审中-公开
标题翻译：用于测量影响电容元件电容特性的值的电路和过程
公开(公告)号：WO1990013793A1
公开(公告)日：1990-11-15
申请号：PCT/EP1990000612
申请日：1990-04-17
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , SCHÖNEBERG, Uwe , HOSTICKA, Bedrich , MACLAY, Jordan , ZIMMER, Günther
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： G01D05/24
CPC分类号： G01D5/24 , G01N27/227 , G01N27/228
摘要： In a circuit and process for measuring a value affecting the capacitance-voltage characteristic of a capacitive component, the accuracy of measurement and the signal-to-noise ratio are improved by finding the value from the area beneath the capacitance-voltage characteristic curve.
摘要翻译：在用于测量影响电容分量的电容 - 电压特性的值的电路和过程中，通过从电容 - 电压特性曲线下面的区域中找到值来提高测量精度和信噪比。

5. 发明申请

WO1993016552A1 MULTIPLE-SAMPLING PROCESS 审中-公开
标题翻译：多采样过程
公开(公告)号：WO1993016552A1
公开(公告)日：1993-08-19
申请号：PCT/DE1993000112
申请日：1993-02-05
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , UHLEMANN, Volker , HOSTICKA, Bedrich
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： H04N05/217
CPC分类号： H04N5/3575 , G11C27/026
摘要： The invention concerns a multiple-sampling process in which a noisy signal and the noise are each sampled N times and processed to give an output signal. In order to improve the signal and noise transmission characteristics, the invention calls for interlaced sampling of the signal and noise. Subsequently, either in the case of triple sampling, a total is calculated from the signal-sampling value and a noise-sampling value,less an additional double noise-sampling value, and the output signal representing the sum of the totals is generated, or the differences between each signal-sampling value and noise-sampling value are calculated, and the output signal calculated from the sum of the differences.

6. 发明申请

WO1994009176A1 DEVICE FOR PLASMA-SUPPORTED ELECTRON BEAM HIGH-RATE VAPOUR DEPOSIITION 审中-公开
标题翻译： DEVICE等离子辅助电子HOCHRATEBEDAMPFEN
公开(公告)号：WO1994009176A1
公开(公告)日：1994-04-28
申请号：PCT/DE1993000750
申请日：1993-08-18
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , NEUMANN, Manfred , SCHILLER, Siegfried , MORGNER, Henry
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： C23C14/32
CPC分类号： C23C14/10 , C23C14/32 , H01J37/3053 , H01J37/3266 , H01J2237/3137
摘要： It is known that improved coating properties can be obtained by plasma action in vacuum deposition, especially by vaporisation. Substantially higher coating rates can be attained in vapour deposition, but, with high plasma densities, they result in excessive scattering of the electron beam and reduce the power density. According to the invention, a plasma source, preferably a hollow cathode arc source, is arranged in the immediate vicinity of the substrate. Between the evaporator and the substrate there is a device for generating a magnetic field so that the region of high plasma density is separated from the evaporator and the electron beam by the magnetic field. The boundary field lines of this magnetic field run along an arc curving with respect to the substrate.

7. 发明申请

WO1994008076A1 HETEROEPITAXIALLY DEPOSITED DIAMOND 审中-公开
标题翻译：异质僻静DIAMOND
公开(公告)号：WO1994008076A1
公开(公告)日：1994-04-14
申请号：PCT/DE1993000936
申请日：1993-10-01
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , DAIMLER BENZ AG , KLAGES, Claus-Peter , JIANG, Xin , FÜSSER, Hans-Jürgen , HARTWEG, Martin , ZACHAI, Reinhard , RÖSLER, Manfred
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , DAIMLER BENZ AG
IPC分类号： C30B25/02
CPC分类号： C23C16/274 , C23C16/0209 , C30B25/105 , C30B29/04 , H01L21/02381 , H01L21/02527 , H01L21/0262 , H01L21/02661
摘要： The invention pertains to a process for producing heteroepitaxial diamond layers on Si substrates by means of chemical vapor deposition and common process gases, wherein (a) the Si surface is pretreated by creating a vacuum and heating the Si substrate to temperatures greater than 300 C, preferably between 600 and 1100 C; (b) a nucleation phase is carried out with a negative bias voltage applied in the range of -60 to -300 volts at a substrate temperature of 400 to 1100 C; (c) the diamond deposition is carried out under per se known conditions without applying a bias voltage.

8. 发明申请

WO1994006943A1 PROCESS FOR CHANGING THE MICROSTRUCTURE OF METALLIC RAILS 审中-公开
标题翻译：方法为了改变金属棒材的结构结构
公开(公告)号：WO1994006943A1
公开(公告)日：1994-03-31
申请号：PCT/DE1993000907
申请日：1993-09-22
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , THYSSEN STAHL AG
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , THYSSEN STAHL AG , KÜPPER, Frank , WISSENBACH, Konrad , SCHMEDDERS, Herbert
IPC分类号： C21D09/04
CPC分类号： C21D9/04 , B23K15/0006 , C21D1/09
摘要： A process is disclosed for changing the local microstructure at the surface of the head of a metallic rail in the solid phase. The microstructure is changed by applying energy only within a limited local marginal layer located directly below the stressed running and wearing surfaces of the rail head by high-energy radiation. The amount of energy absorbed by the rail at the processing site is controlled by said high-energy radiation in such a way that the local microstructure in the marginal layer at the processing site is cooled in an adequately controlled way.

9. 发明申请

WO1994005446A1 ROLLING DEVICE FOR PRODUCING CORRUGATED PIECES MADE OF A METALLIC MATERIAL 审中-公开
标题翻译：滚动装置，用于生产金属材料波浪WORKPIECES
公开(公告)号：WO1994005446A1
公开(公告)日：1994-03-17
申请号：PCT/EP1993002343
申请日：1993-08-30
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , LORENZ, Bernd , ECK, Christoph
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： B21H01/18
CPC分类号： B21H1/18
摘要： A rolling device for producing corrugated workpieces made of a metallic material has two flat jaws which can be synchronically moved towards each other in parallel planes, tangentially to a workpiece revolving around its longitudinal axis. The object of the invention is to provide a device for purposefully shaping non rotationally symmetrical sections in the corrugated workpieces with respect to their longitudinal axis. For that purpose, at least one rolling block (3), whose width is smaller than the total length of the workpiece (1), whose length rolling in the circumferential direction on the workpiece (1) is smaller than or equal to half the circumference of the workpiece, and whose height corresponds to a predetermined eccentricity, is provided on a flat jaw (2b). When the flat jaws are moved, the rolling block (3) displaces the material of the workpiece (1) heated up to an appropriate forging temperature of the material. The displacement of the material leads to the formation of a non rotationally symmetrical section and at the same time to a change in the length of the workpiece, or when the workpiece is laterally limited, to corrugations of the workpiece.

10. 发明申请

WO1993025725A1 PROCESS FOR DEPOSITING SMOOTH POLYCRYSTALLINE LAYERS 审中-公开
标题翻译：法分离平滑的多晶层的
公开(公告)号：WO1993025725A1
公开(公告)日：1993-12-23
申请号：PCT/DE1993000505
申请日：1993-06-08
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , WILD, Christoph , KOIDL, Peter , MÜLLER-SEBERT, Wolfgang , WALCHER, Herbert , ECKERMANN, Thomas
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： C23C16/26
CPC分类号： C23C16/27 , C23C16/02 , C23C16/279 , C23C16/52 , C30B25/02 , C30B29/04
摘要： A process for depositing smooth polycrystalline layers, especially diamond layers, comprises two steps. In a first step the crystal direction of an octahedron (8, 38) is grown with a growth parameter alpha of about 3, preferably over a layer thickness of between 400 and 600 times the mean seed distance on the substrate. In a second step, by reducing the growth parameter alpha , surfaces are generated perpendicularly to this crystal direction and enlarged until they completely cover the surface of the polycrystalline layer. Here, the growth parameter alpha is given by alpha = V100/V111 2ROOT 3, the growth rates of the crystal on {100} and {111} surfaces being given by V100 and V111. This two-step process makes it possible to produce smooth polycrystalline diamond layers in millimetre thicknesses with a roughness in the 100 nanometre range.

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