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1. 发明申请

US20090278668A1 Method and apparatus for controlling alarm function of mobile device with inertial sensor 审中-公开
公开(公告)号：US20090278668A1
公开(公告)日：2009-11-12
申请号：US12460051
申请日：2009-07-13
申请人： Eun Seok Choi , Dong Yoon Kim , Ki Tae Kim , Sung Jung Cho
发明人： Eun Seok Choi , Dong Yoon Kim , Ki Tae Kim , Sung Jung Cho
IPC分类号： G08B1/00
CPC分类号： G04G13/026 , H04M19/04
摘要： Disclosed are a method and an apparatus for controlling an alarm function of a mobile device with an inertial sensor. In one example of the method, after an initial threshold value is established, an alarm occurrence is generated at a predefined hour. If the alarm occurrence is the first, an alarm control unit detects a first movement of the mobile device due to the alarm occurrence through the inertial sensor, and adjusts the initial threshold value according to the first movement. If the alarm occurrence is not the first, the alarm control unit detects a second movement of the mobile device through the inertial sensor, compares the second movement with the adjusted threshold value, and stops the alarm occurrence if the second movement is greater than the adjusted threshold value.

2. 发明授权

US07633836B2 Method and apparatus for controlling alarm function of mobile device with inertial sensor 有权
标题翻译：用惯性传感器控制移动设备报警功能的方法和装置
公开(公告)号：US07633836B2
公开(公告)日：2009-12-15
申请号：US11801660
申请日：2007-05-10
申请人： Eun Seok Choi , Dong Yoon Kim , Ki Tae Kim , Sung Jung Cho
发明人： Eun Seok Choi , Dong Yoon Kim , Ki Tae Kim , Sung Jung Cho
IPC分类号： G08B21/00
CPC分类号： G04G13/026 , H04M19/04
摘要： Disclosed are a method and an apparatus for controlling an alarm function of a mobile device with an inertial sensor. In one example of the method, after an initial threshold value is established, an alarm occurrence is generated at a predefined hour. If the alarm occurrence is the first, an alarm control unit detects a first movement of the mobile device due to the alarm occurrence through the inertial sensor, and adjusts the initial threshold value according to the first movement. If the alarm occurrence is not the first, the alarm control unit detects a second movement of the mobile device through the inertial sensor, compares the second movement with the adjusted threshold value, and stops the alarm occurrence if the second movement is greater than the adjusted threshold value.
摘要翻译：公开了一种利用惯性传感器来控制移动装置的报警功能的方法和装置。在该方法的一个示例中，在初始阈值建立之后，在预定义的时间产生报警发生。如果报警发生是第一次，报警控制单元通过惯性传感器检测到由于报警发生而导致的移动设备的第一移动，并且根据第一移动来调整初始阈值。如果报警发生不是第一次，则报警控制单元通过惯性传感器检测移动设备的第二移动，将第二移动与调整后的阈值进行比较，如果第二移动大于调整后的阈值，则停止报警发生阈值。

3. 发明申请

US20070263490A1 Method and apparatus for controlling alarm function of mobile device with inertial sensor 有权
标题翻译：用惯性传感器控制移动设备报警功能的方法和装置
公开(公告)号：US20070263490A1
公开(公告)日：2007-11-15
申请号：US11801660
申请日：2007-05-10
申请人： Eun Seok Choi , Dong Yoon Kim , Ki Tae Kim , Sung Jung Cho
发明人： Eun Seok Choi , Dong Yoon Kim , Ki Tae Kim , Sung Jung Cho
IPC分类号： G04B47/00 , G04B23/02 , G08B1/00
CPC分类号： G04G13/026 , H04M19/04
摘要： Disclosed are a method and an apparatus for controlling an alarm function of a mobile device with an inertial sensor. In one example of the method, after an initial threshold value is established, an alarm occurrence is generated at a predefined hour. If the alarm occurrence is the first, an alarm control unit detects a first movement of the mobile device due to the alarm occurrence through the inertial sensor, and adjusts the initial threshold value according to the first movement. If the alarm occurrence is not the first, the alarm control unit detects a second movement of the mobile device through the inertial sensor, compares the second movement with the adjusted threshold value, and stops the alarm occurrence if the second movement is greater than the adjusted threshold value.
摘要翻译：公开了一种利用惯性传感器来控制移动装置的报警功能的方法和装置。在该方法的一个示例中，在初始阈值建立之后，在预定义的时间产生报警发生。如果报警发生是第一次，报警控制单元通过惯性传感器检测到由于报警发生而导致的移动设备的第一移动，并且根据第一移动来调整初始阈值。如果报警发生不是第一次，则报警控制单元通过惯性传感器检测移动设备的第二移动，将第二移动与调整后的阈值进行比较，如果第二移动大于调整后的阈值，则停止报警发生阈值。

4. 发明授权

US09452939B2 High-capacity anode material for lithium secondary batteries and process for synthesizing the same 有权
标题翻译：锂二次电池用高容量负极材料及其合成方法
公开(公告)号：US09452939B2
公开(公告)日：2016-09-27
申请号：US12777545
申请日：2010-05-11
申请人： Jae Kook Kim , Chul Hong Woo , Eun Seok Choi , Jin Sub Lim , Dong Han Kim , Seung Ho Ahn
发明人： Jae Kook Kim , Chul Hong Woo , Eun Seok Choi , Jin Sub Lim , Dong Han Kim , Seung Ho Ahn
IPC分类号： C01G23/00
CPC分类号： C01G23/005 , C01P2002/72 , C01P2006/40
摘要： The present invention features a high-capacity anode material for rapidly chargeable and dischargeable lithium secondary batteries, which is composed of Li4Ti5O12 nanoparticles. The Li4Ti5O12 nanoparticles of the present invention exhibit excellent crystallinity and high rate capability compared to those synthesized using a conventional polyol process or solid reaction process by converting Li4Ti5O12, which is a zero-strain insert material spotlighted as an anode active material for lithium secondary batteries, into Li4Ti5O12, having a high crystalline nanostructure using a solvothermal synthesis process without performing additional heat treatment. The present invention also features methods of, and a method of preparing the high-capacity anode materials described herein.
摘要翻译：本发明的特征在于用于快速充电和放电的锂二次电池的高容量负极材料，其由Li 4 Ti 5 O 12纳米颗粒组成。本发明的Li 4 Ti 5 O 12纳米颗粒与使用常规多元醇工艺或固体反应方法合成的Li4Ti5O12纳米颗粒相比，其表现出优异的结晶度和高的速率能力，该Li4Ti5O12是作为锂二次电池的负极活性材料聚焦的零应变插入材料，进入具有高结晶纳米结构的Li 4 Ti 5 O 12中，使用溶剂热合成方法，而不进行额外的热处理。本发明还涉及制备本文所述的大容量阳极材料的方法和方法。

5. 发明申请

US20110138905A1 LIGHTING APPARATUS 有权
标题翻译：照明设备
公开(公告)号：US20110138905A1
公开(公告)日：2011-06-16
申请号：US12966119
申请日：2010-12-13
申请人： Ji Young KIM , Eun Seok Choi , Ji Hye Hwang , Mi Sun Hwang , Hae Rim Park , Min Su Park
发明人： Ji Young KIM , Eun Seok Choi , Ji Hye Hwang , Mi Sun Hwang , Hae Rim Park , Min Su Park
IPC分类号： G01F23/296 , F21S4/00 , F21V9/00 , F21V33/00 , A61L2/10 , G01K13/00
CPC分类号： G01F23/2962 , A61L2/10 , F21V33/00 , F21Y2113/13 , F21Y2115/10 , G01K13/00 , Y10S362/806
摘要： A lighting apparatus is disclosed. The lighting apparatus is capable of achieving improved aesthetics by irradiating mood lighting into a storage container and also, of functioning to display a variety of status information about the storage container to the outside and to sterilize the interior of the storage container.
摘要翻译：公开了一种照明装置。照明装置能够通过将心情照明照射到存储容器中而实现改善的美观，并且还能够将存储容器的各种状态信息显示到外部并对存储容器的内部进行消毒。

6. 发明申请

US20110135564A1 HIGH-CAPACITY ANODE MATERIAL FOR LITHIUM SECONDARY BATTERIES AND PROCESS FOR SYNTHESIZING THE SAME 有权
标题翻译：用于锂二次电池的高容量阳极材料及其合成方法
公开(公告)号：US20110135564A1
公开(公告)日：2011-06-09
申请号：US12777545
申请日：2010-05-11
申请人： Jae Kook Kim , Chul Hong Woo , Eun Seok Choi , Jin Sub Lim , Dong Han Kim , Seung Ho Ahn
发明人： Jae Kook Kim , Chul Hong Woo , Eun Seok Choi , Jin Sub Lim , Dong Han Kim , Seung Ho Ahn
IPC分类号： C01G23/04 , C01D1/02
CPC分类号： C01G23/005 , C01P2002/72 , C01P2006/40
摘要： is the present invention features a high-capacity anode material for rapidly chargeable and dischargeable lithium secondary batteries, which is composed of Li4Ti5O12 nanoparticles. The Li4Ti5O12 nanoparticles of the present invention exhibit excellent crystallinity and high rate capability compared to those synthesized using a conventional polyol process or solid reaction process by converting Li4Ti5O12, which is a zero-strain insert material spotlighted as an anode active material for lithium secondary batteries, into Li4Ti5O12, having a high crystalline nanostructure using a solvothermal synthesis process without performing additional heat treatment. The present invention also features methods of , and a method of preparing the high-capacity anode materials described herein.
摘要翻译：本发明的特征在于用于快速充电和放电的锂二次电池的高容量负极材料，其由Li 4 Ti 5 O 12纳米颗粒组成。本发明的Li 4 Ti 5 O 12纳米粒子与使用常规的多元醇法或固相反应法合成的Li4Ti5O12纳米粒子相比，显示出优异的结晶性和高的倍率性能，其中Li 4 Ti 5 O 12是作为锂二次电池的负极活性物质聚焦的零应变插入材料，进入具有高结晶纳米结构的Li 4 Ti 5 O 12中，使用溶剂热合成方法，而不进行额外的热处理。本发明还涉及制备本文所述的大容量阳极材料的方法和方法。

7. 发明授权

US09111797B2 3-D nonvolatile memory device and method of manufacturing the same 有权
标题翻译： 3-D非易失性存储器件及其制造方法
公开(公告)号：US09111797B2
公开(公告)日：2015-08-18
申请号：US13613839
申请日：2012-09-13
申请人： Eun Seok Choi , Hyun Seung Yoo
发明人： Eun Seok Choi , Hyun Seung Yoo
IPC分类号： H01L29/78 , H01L27/115 , H01L29/66 , H01L29/792
CPC分类号： H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/792
摘要： A three-dimensional (3-D) nonvolatile memory device includes a support protruded from a surface of a substrate and configured to have an inclined sidewall; channel structures each configured to comprise interlayer insulating layers and channel layers which are alternately stacked over the substrate including the support, bent along the inclined sidewall of the support, wherein each of the channel structures comprises a cell region and a contact region, and the channel layers are exposed in the contact region; select lines formed over the channel structures; and a pillar type channels coupled to respective channel layers at the contact region and penetrating the select lines.
摘要翻译：三维（3-D）非易失性存储器件包括从衬底的表面突出并被配置为具有倾斜侧壁的支撑件; 每个通道结构被配置为包括层间绝缘层和沟道层，所述层间绝缘层和沟道层交替堆叠在包括支撑件的基板上，沿着支撑件的倾斜侧壁弯曲，其中每个沟道结构包括单元区域和接触区域，并且沟道层在接触区域中暴露; 选择在通道结构上形成的线; 以及在接触区域处耦合到相应通道层并穿透选择线的柱状通道。

8. 发明授权

US08982621B2 3-dimensional non-volatile memory device and method of manufacturing the same 有权
标题翻译： 3维非易失性存储器件及其制造方法
公开(公告)号：US08982621B2
公开(公告)日：2015-03-17
申请号：US13477479
申请日：2012-05-22
申请人： Eun Seok Choi
发明人： Eun Seok Choi
IPC分类号： G11C11/34 , H01L27/115 , H01L29/792 , G11C16/04
CPC分类号： H01L29/66833 , G11C16/0483 , H01L21/28282 , H01L27/11565 , H01L27/11568 , H01L27/11582 , H01L29/7926
摘要： A non-volatile memory device comprising a plurality of strings each including a drain select transistor, drain-side memory cells, a pipe transistor, source-side memory cells, and a source select transistor coupled in series, wherein the plurality of strings are arranged in a first direction and a second direction, and the strings arranged in the second direction form each of string columns; a plurality of bit lines extended in the second direction and coupled to the drain select transistors of the strings included in each string column; and a plurality of source lines extended in the first direction and in common coupled to the source select transistors of strings adjacent to each other in the second direction, wherein strings included in one of the string columns are staggered in the first direction and each of the string columns are coupled to at least two of the bit lines.
摘要翻译：一种非易失性存储器件，包括多个串，每个串均包括漏极选择晶体管，漏极侧存储单元，管状晶体管，源极侧存储单元和串联耦合的源极选择晶体管，其中多个串排列沿第一方向和第二方向，并且沿着第二方向布置的弦形成每个弦列; 多个位线在第二方向上延伸并耦合到每个串列中包括的串的漏极选择晶体管; 以及多个源极线，沿着第一方向延伸并且共同地耦合到在第二方向上彼此相邻的串的源选择晶体管，其中包括在串列之一中的串在第一方向上交错，并且每个串列耦合到至少两个位线。

9. 发明申请

US20090081841A1 Non-Volatile Memory Device and Manufacturing Method Thereof 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090081841A1
公开(公告)日：2009-03-26
申请号：US12276210
申请日：2008-11-21
申请人： Eun Seok Choi
发明人： Eun Seok Choi
IPC分类号： H01L21/336
CPC分类号： H01L29/513 , H01L21/28282 , H01L29/512
摘要： A non-volatile memory device having a Polysilicon Oxide Nitride Oxide Semiconductor (SONOS) structure in which a charge trap layer is separated physically in a horizontal direction, and a method of manufacturing the same. The charge trap layer that traps electric charges toward the source and the drain is physically divided. It can fundamentally prevent the charges at both sides from being moved mutually. It is therefore possible to prevent interference between charges at both sides although the cell size is reduced.
摘要翻译：一种具有多晶硅氧化物氮化物半导体（SONOS）结构的非易失性存储器件及其制造方法，其中电荷陷阱层在水平方向物理分离。将电荷捕捉到源极和漏极的电荷陷阱层物理上分开。可以从根本上阻止双方的指控互相移动。因此，尽管电池尺寸减小，但是可以防止两侧电荷之间的干扰。

10. 发明申请

US20080128789A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20080128789A1
公开(公告)日：2008-06-05
申请号：US11740882
申请日：2007-04-26
申请人： Kyoung Hwan PARK , Eun Seok Choi , Se Jun Kim , Hyun Seung Yoo
发明人： Kyoung Hwan PARK , Eun Seok Choi , Se Jun Kim , Hyun Seung Yoo
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/42324 , H01L29/40117 , H01L29/4234 , H01L29/7881 , H01L29/792
摘要： A semiconductor memory device includes a semiconductor substrate in which junctions are formed, and a tunnel insulating layer, a charge storage layer, a blocking layer and a gate electrode pattern, which are sequentially stacked over the semiconductor substrate. The blocking layer has a structure in which a blocking insulating layer is surrounded by a high dielectric layer.
摘要翻译：半导体存储器件包括其中形成有结的半导体衬底，以及依次层叠在半导体衬底上的隧道绝缘层，电荷存储层，阻挡层和栅电极图案。阻挡层具有阻挡绝缘层被高介电层包围的结构。

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