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1. 发明授权

US06965844B1 Method and system for processing stability of semiconductor devices 有权
标题翻译：用于处理半导体器件稳定性的方法和系统
公开(公告)号：US06965844B1
公开(公告)日：2005-11-15
申请号：US10880761
申请日：2004-06-29
申请人： Eugene Wang , Jinghua Ni
发明人： Eugene Wang , Jinghua Ni
IPC分类号： G06K9/00 , H01L21/66
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and system for processing stability of semiconductor devices. The method includes providing a first plurality of semiconductor devices, providing a second plurality of semiconductor devices, obtaining a first plurality of measured values corresponding to a characteristic, and obtaining a second plurality of measured values corresponding to the characteristic. Additionally, the method includes performing a first statistical analysis for the first plurality of measured values, determining a first statistical distribution, performing a second statistical analysis for the second plurality of measured values, and determining a second statistical distribution. Moreover, the method includes processing information associated with the first statistical distribution and the second statistical distribution, and determining an indicator. Also, the method includes processing information associated with the indicator, determining a confidence level, processing information associated with the confidence level, and determining whether the characteristic is stable.
摘要翻译：一种用于处理半导体器件的稳定性的方法和系统。该方法包括提供第一多个半导体器件，提供第二多个半导体器件，获得对应于特性的第一多个测量值，以及获得与该特性对应的第二多个测量值。另外，该方法包括对第一多个测量值执行第一统计分析，确定第一统计分布，对第二多个测量值执行第二统计分析，以及确定第二统计分布。此外，该方法包括处理与第一统计分布和第二统计分布相关联的信息，以及确定指标。此外，该方法包括处理与指示符相关联的信息，确定置信水平，处理与置信水平相关联的信息，以及确定特征是否稳定。

2. 发明授权

US07319938B2 Method and system for processing commonality of semiconductor devices 有权
标题翻译：用于处理半导体器件通用性的方法和系统
公开(公告)号：US07319938B2
公开(公告)日：2008-01-15
申请号：US11286255
申请日：2005-11-22
申请人： Eugene Wang , Jinghua Ni
发明人： Eugene Wang , Jinghua Ni
IPC分类号： G06F19/00
CPC分类号： G05B15/02
摘要： A method and system for processing commonality of semiconductor devices. The method includes providing a first plurality of semiconductor devices, providing a second plurality of semiconductor devices, obtaining a first plurality of measured values corresponding to a characteristic associated with the first plurality of semiconductor devices, obtaining a second plurality of measured values corresponding to the characteristic associated with the second plurality of semiconductor devices, performing a first statistical analysis for the first plurality of measured values, determining a first statistical distribution, performing a second statistical analysis for the second plurality of measured values, and determining a second statistical distribution. Moreover, the method includes processing information associated with the first statistical distribution and the second statistical distribution, and determining an indicator. Also, the method includes processing information associated with the indicator, determining a confidence level, processing information associated with the confidence level, and determining whether the characteristic is stable.
摘要翻译：一种用于处理半导体器件的通用性的方法和系统。该方法包括提供第一多个半导体器件，提供第二多个半导体器件，获得对应于与第一多个半导体器件相关联的特性的第一多个测量值，获得对应于特性的第二多个测量值与所述第二多个半导体器件相关联，对所述第一多个测量值执行第一统计分析，确定第一统计分布，对所述第二多个测量值执行第二统计分析，以及确定第二统计分布。此外，该方法包括处理与第一统计分布和第二统计分布相关联的信息，以及确定指标。此外，该方法包括处理与指示符相关联的信息，确定置信水平，处理与置信水平相关联的信息，以及确定特征是否稳定。

3. 发明申请

US20060247894A1 Method and system for processing commonality of semiconductor devices 有权
公开(公告)号：US20060247894A1
公开(公告)日：2006-11-02
申请号：US11286255
申请日：2005-11-22
申请人： Eugene Wang , Jinghua Ni
发明人： Eugene Wang , Jinghua Ni
IPC分类号： G06F17/18
CPC分类号： G05B15/02
摘要： A method and system for processing commonality of semiconductor devices. The method includes providing a first plurality of semiconductor devices, providing a second plurality of semiconductor devices, obtaining a first plurality of measured values corresponding to a characteristic associated with the first plurality of semiconductor devices, and obtaining a second plurality of measured values corresponding to the characteristic associated with the second plurality of semiconductor devices. Additionally, the method includes performing a first statistical analysis, determining a first statistical distribution, performing a second statistical analysis, and determining a second statistical distribution. Moreover, the method includes processing information associated with the first statistical distribution and the second statistical distribution, and determining an indicator. Also, the method includes processing information associated with the indicator, determining a confidence level, processing information associated with the confidence level, and determining whether the characteristic is stable.

4. 发明授权

US07003430B2 Method and system for processing commonality of semiconductor devices 有权
标题翻译：用于处理半导体器件通用性的方法和系统
公开(公告)号：US07003430B2
公开(公告)日：2006-02-21
申请号：US10882081
申请日：2004-06-29
申请人： Eugene Wang , Jinghua Ni
发明人： Eugene Wang , Jinghua Ni
IPC分类号： G01F11/30
CPC分类号： G05B15/02
摘要： A method and system for processing commonality of semiconductor devices. The method includes providing a first plurality of semiconductor devices, providing a second plurality of semiconductor devices, obtaining a first plurality of measured values corresponding to a characteristic associated with the first plurality of semiconductor devices, and obtaining a second plurality of measured values corresponding to the characteristic associated with the second plurality of semiconductor devices. Additionally, the method includes performing a first statistical analysis, determining a first statistical distribution, performing a second statistical analysis, and determining a second statistical distribution. Moreover, the method includes processing information associated with the first statistical distribution and the second statistical distribution, and determining an indicator. Also, the method includes processing information associated with the indicator, determining a confidence level, processing information associated with the confidence level, and determining whether the characteristic is stable.
摘要翻译：一种用于处理半导体器件的通用性的方法和系统。该方法包括提供第一多个半导体器件，提供第二多个半导体器件，获得对应于与第一多个半导体器件相关联的特性的第一多个测量值，以及获得对应于第一多个半导体器件的第二多个测量值特性与第二多个半导体器件相关联。另外，该方法包括执行第一统计分析，确定第一统计分布，执行第二统计分析和确定第二统计分布。此外，该方法包括处理与第一统计分布和第二统计分布相关联的信息，以及确定指标。此外，该方法包括处理与指示符相关联的信息，确定置信水平，处理与置信水平相关联的信息，以及确定特征是否稳定。

5. 发明申请

US20050278141A1 METHOD AND SYSTEM FOR PROCESSING COMMONALITY OF SEMICONDUCTOR DEVICES 有权
标题翻译：用于处理半导体器件的共同性的方法和系统
公开(公告)号：US20050278141A1
公开(公告)日：2005-12-15
申请号：US10882081
申请日：2004-06-29
申请人： Eugene Wang , Jinghua Ni
发明人： Eugene Wang , Jinghua Ni
IPC分类号： G05B15/02 , G06F15/00
CPC分类号： G05B15/02
摘要： A method and system for processing commonality of semiconductor devices. The method includes providing a first plurality of semiconductor devices, providing a second plurality of semiconductor devices, obtaining a first plurality of measured values corresponding to a characteristic associated with the first plurality of semiconductor devices, and obtaining a second plurality of measured values corresponding to the characteristic associated with the second plurality of semiconductor devices. Additionally, the method includes performing a first statistical analysis, determining a first statistical distribution, performing a second statistical analysis, and determining a second statistical distribution. Moreover, the method includes processing information associated with the first statistical distribution and the second statistical distribution, and determining an indicator. Also, the method includes processing information associated with the indicator, determining a confidence level, processing information associated with the confidence level, and determining whether the characteristic is stable.
摘要翻译：一种用于处理半导体器件的通用性的方法和系统。该方法包括提供第一多个半导体器件，提供第二多个半导体器件，获得对应于与第一多个半导体器件相关联的特性的第一多个测量值，以及获得与第一多个半导体器件对应的第二多个测量值特性与第二多个半导体器件相关联。另外，该方法包括执行第一统计分析，确定第一统计分布，执行第二统计分析和确定第二统计分布。此外，该方法包括处理与第一统计分布和第二统计分布相关联的信息，以及确定指标。此外，该方法包括处理与指示符相关联的信息，确定置信水平，处理与置信水平相关联的信息，以及确定特征是否稳定。

6. 发明授权

US09190282B2 High-K dielectric layer based semiconductor structures and fabrication process thereof 有权
标题翻译：基于高K电介质层的半导体结构及其制造方法
公开(公告)号：US09190282B2
公开(公告)日：2015-11-17
申请号：US13662535
申请日：2012-10-28
申请人： Aileen Li , Jinghua Ni
发明人： Aileen Li , Jinghua Ni
IPC分类号： H01L21/8242 , H01L21/28 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28202 , H01L29/518 , H01L29/78
摘要： A method is disclosed for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming a first dielectric layer on a surface of the semiconductor substrate based on a first-type oxidation, and forming a high-K dielectric layer on a surface of the first dielectric layer. The method also includes performing a first thermal annealing process to remove the first dielectric layer between the semiconductor substrate and the high-K dielectric layer such that the high-K dielectric layer is on the surface of the semiconductor substrate. Further, the method includes performing a second thermal annealing process to form a second dielectric layer on the surface of the semiconductor substrate between the semiconductor substrate and the high-K dielectric layer, based on a second-type oxidation different from the first-type oxidation, such that high-K dielectric layer is on the second dielectric layer instead of the first dielectric layer.
摘要翻译：公开了制造半导体结构的方法。该方法包括提供半导体衬底，基于第一类型氧化在半导体衬底的表面上形成第一电介质层，以及在第一电介质层的表面上形成高K电介质层。该方法还包括执行第一热退火处理以去除半导体衬底和高K电介质层之间的第一介电层，使得高K电介质层在半导体衬底的表面上。此外，该方法包括进行第二热退火处理以在半导体衬底和高K电介质层之间的半导体衬底的表面上形成第二介电层，基于与第一类型氧化不同的第二类型氧化使得高K电介质层位于第二介电层上而不是第一介电层。

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