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1. 发明授权

US09190282B2 High-K dielectric layer based semiconductor structures and fabrication process thereof 有权
标题翻译：基于高K电介质层的半导体结构及其制造方法
公开(公告)号：US09190282B2
公开(公告)日：2015-11-17
申请号：US13662535
申请日：2012-10-28
申请人： Aileen Li , Jinghua Ni
发明人： Aileen Li , Jinghua Ni
IPC分类号： H01L21/8242 , H01L21/28 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28202 , H01L29/518 , H01L29/78
摘要： A method is disclosed for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming a first dielectric layer on a surface of the semiconductor substrate based on a first-type oxidation, and forming a high-K dielectric layer on a surface of the first dielectric layer. The method also includes performing a first thermal annealing process to remove the first dielectric layer between the semiconductor substrate and the high-K dielectric layer such that the high-K dielectric layer is on the surface of the semiconductor substrate. Further, the method includes performing a second thermal annealing process to form a second dielectric layer on the surface of the semiconductor substrate between the semiconductor substrate and the high-K dielectric layer, based on a second-type oxidation different from the first-type oxidation, such that high-K dielectric layer is on the second dielectric layer instead of the first dielectric layer.
摘要翻译：公开了制造半导体结构的方法。该方法包括提供半导体衬底，基于第一类型氧化在半导体衬底的表面上形成第一电介质层，以及在第一电介质层的表面上形成高K电介质层。该方法还包括执行第一热退火处理以去除半导体衬底和高K电介质层之间的第一介电层，使得高K电介质层在半导体衬底的表面上。此外，该方法包括进行第二热退火处理以在半导体衬底和高K电介质层之间的半导体衬底的表面上形成第二介电层，基于与第一类型氧化不同的第二类型氧化使得高K电介质层位于第二介电层上而不是第一介电层。

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