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    • 6. 发明授权
    • Controlled magnetron shape for uniformly sputtered thin film
    • 用于均匀溅射薄膜的受控磁控管形状
    • US06758950B2
    • 2004-07-06
    • US10116261
    • 2002-04-04
    • Peter R. KraussShaun E. McKinlay
    • Peter R. KraussShaun E. McKinlay
    • C23C1435
    • C23C14/35H01J37/3408
    • A sputtering chamber includes a sputtering target with a front target surface, and a magnetron behind the sputtering target. The magnetron provides a magnetic field at the front target surface along a generally round path that includes a path indentation. A shutter is spaced apart from the front target surface by a shutter spacing. A substrate is aligned with a central region in front of the front target surface and spaced apart from the front target surface by a selected spacing that is greater than the shutter spacing. The central region has a diameter defined by a uniformly sputtered thickness of deposited layers on the substrate. The path indentation is set to a path indentation depth that adjusts the selected spacing to maximize the diameter.
    • 溅射室包括具有前目标表面的溅射靶和溅射靶后面的磁控管。 磁控管沿着包括路径压痕的大致圆形路径在前目标表面处提供磁场。 快门通过快门间隔与前目标表面间隔开。 基板与前目标表面前方的中心区域对准,并且与前目标表面间隔开大于快门间隔的选定间隔。 中心区域具有由衬底上均匀溅射的沉积层厚度限定的直径。 路径缩进设置为路径缩进深度,可调整所选间距以最大化直径。