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1. 发明授权

US07283301B2 Emissive screen display with laser-based external addressing 有权
标题翻译：具有基于激光的外部寻址的发射屏幕显示
公开(公告)号：US07283301B2
公开(公告)日：2007-10-16
申请号：US11016242
申请日：2004-12-17
申请人： Eric Peeters , Noble M. Johnson , Ross D. Bringans
发明人： Eric Peeters , Noble M. Johnson , Ross D. Bringans
IPC分类号： G03B21/56
CPC分类号： H01J31/15 , G09G3/02 , G09G2360/141 , H01J31/127 , H01J31/505
摘要： A display apparatus includes an emissive screen having luminescent pixels that are addressed solely by a laser addressing system. Each pixel includes a luminescent region located next to a photocathode. When struck by the laser beam, free electrons are created that are accelerated by an applied high voltage field from the photocathode to the luminescent region, thereby causing the luminescent region to emit visible light with a brightness (energy) that is substantially higher than the energy of the addressing beam. Apertures are optionally provided in hexagonal luminescent regions to relax beam-scanning requirements. Optional millichannel plates (crude versions of 2nd generation night vision system Microchannel plates) are provided to enhance photon multiplication. A position sensitive device is implemented using the photocathode or photoanode (luminescent) material to facilitate the scanning and modulating process. Ambient light is prevented from generating unwanted pixel activation by filter coatings, spatial filtering or electronic filtering.
摘要翻译：显示装置包括具有仅由激光寻址系统寻址的发光像素的发射屏幕。每个像素包括位于光电阴极旁边的发光区域。当被激光束撞击时，产生通过从光电阴极到发光区域的施加的高电压场加速的自由电子，从而使得发光区域发射具有明显高于能量的亮度（能量）的可见光的寻址光束。孔可选地设置在六边形发光区域以缓和波束扫描需求。提供可选的米通道板（粗制版本的2代夜视系统微通道板）以增强光子倍增。使用光电阴极或光电阳极（发光）材料实现位置敏感器件以便于扫描和调制过程。通过过滤器涂层，空间滤波或电子滤波防止环境光产生不需要的像素激活。

2. 发明授权

US07232229B2 Laser-based display with position sensitive detector 有权
标题翻译：带位置敏感探测器的激光显示
公开(公告)号：US07232229B2
公开(公告)日：2007-06-19
申请号：US11016062
申请日：2004-12-17
申请人： Eric Peeters , Noble M. Johnson , Ross D. Bringans
发明人： Eric Peeters , Noble M. Johnson , Ross D. Bringans
IPC分类号： G03B21/00 , G03B21/56
CPC分类号： G03B21/60 , G03B21/14 , H04N9/3129
摘要： A display apparatus includes a luminescent screen having pixels formed from blue, green and red luminescent material that are selectively activated by a laser beam to generate a full color image. The display utilizes a closed loop laser scanning/modulating arrangement in which a Position Sensitive Device (PSD) located next to the screen is used to determine the location of the impinging beam, and to transmit timing/location data to the laser addressing system. The laser addressing system uses the timing/location data to adjust and/or modulate the laser beam, thereby generating high-energy beam pulses that activate the selected pixels. The PSD includes vertical strips located along the side edges of the screen, or a sheet that is located behind the screen and accessed, for example, by way of slits or apertures formed in the screen material. The PSD sheet is coupled to an optional power source to form a photon-multiplication device.
摘要翻译：显示装置包括具有由蓝色，绿色和红色发光材料形成的像素的荧光屏，其被激光束选择性地激活以产生全色图像。显示器利用闭环激光扫描/调制装置，其中使用位于屏幕旁边的位置敏感装置（PSD）来确定入射光束的位置，并将定时/位置数据传送到激光寻址系统。激光寻址系统使用定时/位置数据来调整和/或调制激光束，从而产生激活所选择的像素的高能量束脉冲。 PSD包括沿着屏幕的侧边缘定位的垂直条，或者位于屏幕后面的片材，例如通过形成在屏幕材料中的狭缝或孔进入。 PSD片材耦合到可选的电源以形成光子倍增装置。

3. 发明授权

US5977612A Semiconductor devices constructed from crystallites 失效
标题翻译：由微晶构成的半导体器件
公开(公告)号：US5977612A
公开(公告)日：1999-11-02
申请号：US770403
申请日：1996-12-20
申请人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
发明人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
IPC分类号： H01S5/00 , H01L29/201 , H01L33/16 , H01L33/32 , H01S5/323 , H01S5/343 , H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/201 , H01L33/16 , H01S5/34333
摘要： The present invention relates to electronic devices formed in crystallites of III-V nitride materials. Specifically, the present invention simplifies the processing technology required for the fabrication of high-performance electronic devices in III-V nitride materials.
摘要翻译：本发明涉及以III-V族氮化物材料微晶形成的电子器件。具体地说，本发明简化了在III-V族氮化物材料中制造高性能电子器件所需的加工技术。

4. 发明授权

US5766981A Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD 失效
标题翻译：具有选择性IILD的热处理，含磷或砷的半导体激光器
公开(公告)号：US5766981A
公开(公告)日：1998-06-16
申请号：US368676
申请日：1995-01-04
申请人： Robert L. Thornton , Ross D. Bringans , G. A. Neville Connell , David W. Treat , David P. Bour , Fernando A. Ponce , Noble M. Johnson , Kevin J. Beernink
发明人： Robert L. Thornton , Ross D. Bringans , G. A. Neville Connell , David W. Treat , David P. Bour , Fernando A. Ponce , Noble M. Johnson , Kevin J. Beernink
IPC分类号： H01L21/20 , H01L21/324 , H01S5/00 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34326 , H01S5/2275 , H01S5/3413 , H01S5/3414
摘要： Methods for defect-free impurity-induced laser disordering (IILD) of AlGaInP and AlGaAs heterostructures. Phosphorus-doped or As-doped films are used in which silicon serves as a diffusion source and silicon nitride acts as a barrier for selective IILD. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. The deposition of the diffusion source films preferably is carried out in a low pressure reactor. Also disclosed is a scheme for reducing or eliminating phosphorus overpressure during silicon diffusion into III-V semiconducting material by adding a pre-diffusion anneal step. Defects produced during intermixing are also reduced using a GaInP or GaInP/GaAs cap.
摘要翻译： AlGaInP和AlGaAs异质结构的无缺陷杂质诱导激光无序化（IILD）的方法。使用磷掺杂或As掺杂膜，其中硅用作扩散源，氮化硅用作选择性IILD的屏障。可以使用与AlGaAs材料系统中制造的那些类似的技术来制造高性能，折射率引导（AlGa）0.5In0.5P激光器。扩散源膜的沉积优选在低压反应器中进行。还公开了通过添加预扩散退火步骤来减少或消除硅扩散到III-V半导体材料中的磷过压的方案。在混合过程中产生的缺陷也可以使用GaInP或GaInP / GaAs帽降低。

5. 发明授权

US07310358B2 Semiconductor lasers 有权
标题翻译：半导体激光器
公开(公告)号：US07310358B2
公开(公告)日：2007-12-18
申请号：US11015990
申请日：2004-12-17
申请人： Christopher L. Chua , Michael A. Kneissl , Patrick Y. Maeda , Noble M. Johnson , Ross D. Bringans , John E. Northrup , David K. Biegelsen
发明人： Christopher L. Chua , Michael A. Kneissl , Patrick Y. Maeda , Noble M. Johnson , Ross D. Bringans , John E. Northrup , David K. Biegelsen
IPC分类号： H01S3/10 , H01S5/00 , H01S3/14
CPC分类号： H01S5/0425 , H01S5/4031 , H01S5/4087
摘要： Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures. Exemplary differences include that one laser's semiconductor structure can have an isolated area that does not receive electrical current from a covering conductive layer; conductive layers of two layers can have different thicknesses or lengths; one laser can have a patterned layer with high electrical resistance between its semiconductor structure and a conductive layer; or one laser's semiconductor structure can include regions of high electrical resistance adjacent its contact structure.
摘要翻译：诸如激光结构的激光器可以包括两个或更多个半导体结构，其基本相同或包括相同的半导体材料并具有基本上相同的几何形状，例如紧密间隔的双点双光束或四点四光束，光束激光器。激光器还可以包括不同结构的电流或接触结构或不同的波长控制结构。例如，电流或接触结构可以被不同地构造以防止或以其他方式影响锁相，例如通过引起不同的阈值电流和不同的工作温度。示例性差异包括一个激光器的半导体结构可以具有不从覆盖导电层接收电流的隔离区域; 两层的导电层可以具有不同的厚度或长度; 一个激光器可以具有在其半导体结构和导电层之间具有高电阻的图案层; 或者一个激光器的半导体结构可以包括邻近其接触结构的高电阻的区域。

6. 发明申请

US20140072009A1 ELECTRON BEAM PUMPED VERTICAL CAVITY SURFACE EMITTING LASER 有权
标题翻译：电子束泵浦垂直孔表面发射激光
公开(公告)号：US20140072009A1
公开(公告)日：2014-03-13
申请号：US13523681
申请日：2012-06-14
申请人： Thomas Wunderer , Noble M. Johnson , John E. Northrup
发明人： Thomas Wunderer , Noble M. Johnson , John E. Northrup
IPC分类号： H01S5/343
CPC分类号： H01S5/343 , B82Y20/00 , H01S3/109 , H01S5/0222 , H01S5/02461 , H01S5/04 , H01S5/14 , H01S5/183 , H01S5/18358 , H01S5/18369 , H01S5/1838 , H01S5/18383 , H01S5/305 , H01S5/3086 , H01S5/3222 , H01S5/327 , H01S5/34333
摘要： A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.
摘要翻译：垂直外腔表面发射激光器（VECSEL）结构包括异质结构和第一和第二反射器。异质结构包括具有一个或多个量子阱结构的有源区，该量子阱结构被配置为响应于电子束的泵浦而发射波长的辐射，羊涎酸。可以掺杂一个或多个异质结构层。有源区域设置在第一反射器和第二反射器之间，并且通过外部空腔与第一反射器间隔开。电子束源被配置为产生朝向有源区域的电子束。至少一个电触点电耦合到异质结构并且被配置为提供异质结构和地之间的电流路径。

7. 发明申请

US20130052758A1 REMOVING ALUMINUM NITRIDE SECTIONS 有权
标题翻译：拆除硝酸铝部分
公开(公告)号：US20130052758A1
公开(公告)日：2013-02-28
申请号：US13217821
申请日：2011-08-25
申请人： Brent S. Krusor , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Bowen Cheng
发明人： Brent S. Krusor , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Bowen Cheng
IPC分类号： H01L21/66 , B44C1/22
CPC分类号： H01L22/26 , H01L21/67086 , H01L21/67253 , H01L22/12 , H01L33/0079
摘要： Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.
摘要翻译：讨论了从体积AlN上外延生长的一层或多层基本上去除块状氮化铝（AlN）的方法。在蚀刻过程中，大块AlN暴露于蚀刻剂。在蚀刻过程中，可以测量体积AlN的厚度并用于控制蚀刻。

8. 发明申请

US20130049005A1 DEVICES HAVING REMOVED ALUMINUM NITRIDE SECTIONS 有权
标题翻译：具有去除的氮化铝部分的装置
公开(公告)号：US20130049005A1
公开(公告)日：2013-02-28
申请号：US13217844
申请日：2011-08-25
申请人： Christopher L. Chua , Brent S. Krusor , Thomas Wunderer , Noble M. Johnson
发明人： Christopher L. Chua , Brent S. Krusor , Thomas Wunderer , Noble M. Johnson
IPC分类号： H01L33/02 , C30B25/02 , B32B3/10
CPC分类号： H01L33/0079 , H01L2224/48091 , H01L2224/48465 , H01L2224/73257 , Y10T428/24802 , H01L2924/00014
摘要： One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.
摘要翻译：在本体结晶AlN衬底上外延生长一层或多层。外延层包括作为外延层的外延生长的初始表面的表面。在外延生长的初始表面的大部分上基本上去除了AlN衬底。

9. 发明授权

US08320983B2 Controlling transfer of objects affecting optical characteristics 有权
标题翻译：控制影响光学特性的物体的传递
公开(公告)号：US08320983B2
公开(公告)日：2012-11-27
申请号：US11957610
申请日：2007-12-17
申请人： Joerg Martini , Jeffrey Roe , Peter Kiesel , Michael Bassler , Alan Bell , Richard H. Bruce , Noble M. Johnson
发明人： Joerg Martini , Jeffrey Roe , Peter Kiesel , Michael Bassler , Alan Bell , Richard H. Bruce , Noble M. Johnson
IPC分类号： A61B5/1455
CPC分类号： A61B5/1459 , A61B5/14532 , G01N21/03 , G01N21/39 , G01N21/8507
摘要： An implantable product such as an article, device, or system can include analyte and non-analyte containers in parts that can be operated as optical cavities. The product can also include fluidic components such as filter assemblies that control transfer of objects that affect or shift spectrum features or characteristics such as by shifting transmission mode peaks or reflection mode valleys, shifting phase, reducing maxima or contrast, or increasing intermediate intensity width such as full width half maximum (FWHM). Analyte, e.g. glucose molecules, can be predominantly included in a set of objects that transfer more rapidly into the analyte container than other objects, and can have a negligible or zero rate of transfer into the non-analyte container; objects that transfer more rapidly into the non-analyte container can include objects smaller than the analyte or molecules of a set of selected types, including, e.g., sodium chloride. Output light from the containers accordingly includes information about analyte.
摘要翻译：诸如制品，装置或系统的可植入产品可以包括可以作为光腔操作的部件中的分析物和非分析物容器。该产品还可以包括流体组件，例如过滤器组件，其控制影响或移动光谱特征或特性的物体的转移，例如通过移动透射模式峰值或反射模式谷，移动相位，减小最大值或对比度，或增加中等强度宽度，作为全宽半最大值（FWHM）。分析物，例如葡萄糖分子可以主要包括在一组物体中，其比其它物体更快地转移到分析物容器中，并且可以具有可忽略或零速率的转移到非分析物容器中; 将更快速地转移到非分析物容器中的物体可以包括比分析物小的物体或一组选定类型的分子，包括例如氯化钠。因此，来自容器的输出光包括关于分析物的信息。

10. 发明授权

US07856040B2 Semiconductor light emitting devices with non-epitaxial upper cladding 有权
标题翻译：具有非外延上包层的半导体发光器件
公开(公告)号：US07856040B2
公开(公告)日：2010-12-21
申请号：US12237106
申请日：2008-09-24
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0045 , H01S5/0425 , H01S5/1039 , H01S5/1228 , H01S5/2009 , H01S5/2027 , H01S5/22 , H01S5/3211 , H01S5/3214 , H01S5/3216
摘要： The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer.
摘要翻译：氮化物激光二极管的AlGaN上覆层由诸如金属银的非外延层代替。如果选择具有相对低的折射率值，则在非外延包层中的吸收的模式损耗可以接受地小。如果还选择具有较高的功函数，则非外延层与氮化物半导体形成电接触。也可以在非外延包覆层中使用铟锡氧化物层。

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