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1. 发明授权

US08461018B2 Treatment for bonding interface stabilization 有权
标题翻译：接合界面稳定性的处理
公开(公告)号：US08461018B2
公开(公告)日：2013-06-11
申请号：US13153709
申请日：2011-06-06
申请人： Eric Neyret , Sebastien Kerdiles
发明人： Eric Neyret , Sebastien Kerdiles
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.
摘要翻译：提供了一种方法和/或系统，用于产生包括在衬底上的薄层半导体材料的结构。该方法包括在施主衬底的厚度上形成脆化区域，用支撑衬底粘合施主衬底，并将施主衬底分离在脆化区域的水平，以将施主衬底的薄层转移到支撑衬底上。该方法还包括对所得结构的热处理，以稳定薄层和基底支撑体之间的结合界面。本发明还涉及通过这种方法获得的结构。

2. 发明申请

US20080014713A1 Treatment for bonding interface stabilization 有权
公开(公告)号：US20080014713A1
公开(公告)日：2008-01-17
申请号：US11788292
申请日：2007-04-19
申请人： Eric Neyret , Sebastien Kerdiles
发明人： Eric Neyret , Sebastien Kerdiles
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.

3. 发明申请

US20110233720A1 TREATMENT FOR BONDING INTERFACE STABILIZATION 有权
标题翻译：用于接合界面稳定的处理
公开(公告)号：US20110233720A1
公开(公告)日：2011-09-29
申请号：US13153709
申请日：2011-06-06
申请人： Eric Neyret , Sebastien Kerdiles
发明人： Eric Neyret , Sebastien Kerdiles
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76254
摘要： A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.
摘要翻译：提供了一种方法和/或系统，用于产生包括在衬底上的薄层半导体材料的结构。该方法包括在施主衬底的厚度上形成脆化区域，用支撑衬底粘合施主衬底，并将施主衬底分离在脆化区域的水平，以将施主衬底的薄层转移到支撑衬底上。该方法还包括对所得结构的热处理，以稳定薄层和基底支撑体之间的结合界面。本发明还涉及通过这种方法获得的结构。

4. 发明申请

US20080014718A1 Treatment for bonding interface stabilization 有权
标题翻译：接合界面稳定性的处理
公开(公告)号：US20080014718A1
公开(公告)日：2008-01-17
申请号：US11807686
申请日：2007-05-29
申请人： Eric Neyret , Sebastien Kerdiles
发明人： Eric Neyret , Sebastien Kerdiles
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.
摘要翻译：提供了一种方法和/或系统，用于产生包括在衬底上的薄层半导体材料的结构。该方法包括在施主衬底的厚度上形成脆化区域，用支撑衬底粘合施主衬底，并将施主衬底分离在脆化区域的水平，以将施主衬底的薄层转移到支撑衬底上。该方法还包括对所得结构的热处理，以稳定薄层和基底支撑体之间的结合界面。本发明还涉及通过这种方法获得的结构。

5. 发明授权

US08216916B2 Treatment for bonding interface stabilization 有权
标题翻译：接合界面稳定性的处理
公开(公告)号：US08216916B2
公开(公告)日：2012-07-10
申请号：US11788292
申请日：2007-04-19
申请人： Eric Neyret , Sebastien Kerdiles
发明人： Eric Neyret , Sebastien Kerdiles
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.
摘要翻译：提供了一种方法和/或系统，用于产生包括在衬底上的薄层半导体材料的结构。该方法包括在施主衬底的厚度上形成脆化区域，用支撑衬底粘合施主衬底，并将施主衬底分离在脆化区域的水平，以将施主衬底的薄层转移到支撑衬底上。该方法还包括对所得结构的热处理，以稳定薄层和基底支撑体之间的结合界面。本发明还涉及通过这种方法获得的结构。

6. 发明授权

US07863158B2 Treatment for bonding interface stabilization 有权
标题翻译：接合界面稳定性的处理
公开(公告)号：US07863158B2
公开(公告)日：2011-01-04
申请号：US11807686
申请日：2007-05-29
申请人： Eric Neyret , Sebastien Kerdiles
发明人： Eric Neyret , Sebastien Kerdiles
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.
摘要翻译：提供了一种方法和/或系统，用于产生包括在衬底上的薄层半导体材料的结构。该方法包括在施主衬底的厚度上形成脆化区域，用支撑衬底粘合施主衬底，并将施主衬底分离在脆化区域的水平，以将施主衬底的薄层转移到支撑衬底上。该方法还包括对所得结构的热处理，以稳定薄层和基底支撑体之间的结合界面。本发明还涉及通过这种方法获得的结构。

7. 发明申请

US20070093039A1 TOOLS AND METHODS FOR DISUNITING SEMICONDUCTOR WAFERS 有权
标题翻译：用于散射半导体波长的工具和方法
公开(公告)号：US20070093039A1
公开(公告)日：2007-04-26
申请号：US11567417
申请日：2006-12-06
申请人： Sebastien Kerdiles , Yves-Matthieu Le Vaillant
发明人： Sebastien Kerdiles , Yves-Matthieu Le Vaillant
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L21/68707 , G01N19/04 , H01L21/67092 , Y10S156/943 , Y10T29/53683 , Y10T83/0267 , Y10T156/1132 , Y10T156/1168 , Y10T156/1978 , Y10T156/1983
摘要： A tool and method for disuniting two wafers, wherein at least one of the wafers is used in fabricating substrates for microelectronics, optoelectronics, or optics. The method includes the steps of temporarily affixing two gripper members to respective opposite faces of the wafers; and sufficiently displacing one of the gripper members relative to the other for inducing controlled flexing in at least one of the members and for exerting a force close to one edge of the wafers to assist in disuniting the wafers. If desired, the bonding energy between two wafers can be determined by measuring the force exerted during the displacement step or measuring the separation of the wafers while performing the disuniting operation.
摘要翻译：一种用于分离两个晶片的工具和方法，其中至少一个晶片用于制造用于微电子学，光电子学或光学器件的衬底。该方法包括以下步骤：将两个夹持件暂时固定到晶片的各个相对面上; 并且相对于另一个充分地移动夹持构件中的一个，用于在至少一个构件中引起受控的弯曲并且用于施加接近晶片的一个边缘的力以帮助使晶片脱离。如果需要，可以通过测量在位移步骤期间施加的力或在执行分离操作时测量晶片的分离来确定两个晶片之间的结合能。

8. 发明申请

US20060228820A1 Multifunctional metallic bonding 有权
标题翻译：多功能金属接合
公开(公告)号：US20060228820A1
公开(公告)日：2006-10-12
申请号：US11447863
申请日：2006-06-07
申请人： Sebastien Kerdiles , Fabrice Letertre , Christophe Morales , Hubert Moriceau
发明人： Sebastien Kerdiles , Fabrice Letertre , Christophe Morales , Hubert Moriceau
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L21/02032 , H01L21/76254 , H01L21/76259 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by a non-destructive mechanical release.
摘要翻译：提供了用于在最终基板上制造半导体材料的转移层的方法。在一些实施方案中，通过在初始载体上形成半导体材料层，通过金属键合组装该层和最终的基底，并在初始载体与薄层的弱界面机械分离，在最终的基底上产生转移层，最初将层附加到初始支持。可以获得可用于制造诸如发光二极管或激光二极管的各种部件的中间基板。这些技术可以在最终的基底上产生转移层，并且可再循环的初始载体可以从转移层分离出来，以便通过非破坏性的机械释放再循环。

9. 发明授权

US08435897B2 Method for reclaiming a surface of a substrate 有权
标题翻译：回收基材表面的方法
公开(公告)号：US08435897B2
公开(公告)日：2013-05-07
申请号：US12658655
申请日：2010-02-12
申请人： Aziz Alami-Idrissi , Sebastien Kerdiles , Walter Schwarzenbach
发明人： Aziz Alami-Idrissi , Sebastien Kerdiles , Walter Schwarzenbach
IPC分类号： H01L29/72
CPC分类号： H01L21/304 , H01L21/02032 , H01L21/76254
摘要： A method for reclaiming a surface of a substrate, wherein the surface, in particular a silicon surface, comprises a protruding residual topography, comprising at least the layer of a first material. By providing a filling material in the non-protruding areas of the surface of the substrate and the subsequent polishing, the reclaiming can be carried out such that the material consuming double-sided polishing step used in the prior art is no longer necessary.
摘要翻译：一种用于回收衬底表面的方法，其中表面，特别是硅表面包括突出的残留形貌，至少包括第一材料层。通过在衬底表面的非突出区域中提供填充材料和随后的抛光，可以进行回收，使得不再需要现有技术中使用的消耗双面抛光步骤的材料。

10. 发明授权

US08183128B2 Method of reducing roughness of a thick insulating layer 有权
标题翻译：降低厚绝缘层粗糙度的方法
公开(公告)号：US08183128B2
公开(公告)日：2012-05-22
申请号：US12234280
申请日：2008-09-19
申请人： Nicolas Daval , Sebastien Kerdiles , Cécile Aulnette
发明人： Nicolas Daval , Sebastien Kerdiles , Cécile Aulnette
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/31055 , H01L21/31116
摘要： A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate, and then smoothing the exposed rough surface of the insulator layer by exposure to a gas plasma in a chamber. The chamber contains therein a gas at a pressure of greater than 0.25 Pa but less than 30 Pa, and the gas plasma is created using a radiofrequency generator applying to the insulator layer a power density greater than 0.6 W/cm2 but less than 10 W/cm2 for at least 10 seconds to less than 200 seconds. Substrate bonding and layer transfer may be carried out subsequently to transfer the thin layer of substrate and the insulator layer to a second substrate.
摘要翻译：一种通过在衬底上沉积绝缘体层来减小衬底上的绝缘体层的暴露表面的粗糙度的方法，其中绝缘体层包括与衬底相对的暴露的粗糙表面，然后通过暴露于室内的气体等离子体。该室包含大于0.25Pa但小于30Pa的压力的气体，并且使用射频发生器产生气体等离子体，所述射频发生器施加到绝缘体层的功率密度大于0.6W / cm 2但小于10W / cm2至少10秒至小于200秒。衬底接合和层转移可以随后进行以将衬底和绝缘体层的薄层转移到第二衬底。

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