专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07177781B2 Method and system for electron density measurement 有权
标题翻译：电子密度测量方法和系统
公开(公告)号：US07177781B2
公开(公告)日：2007-02-13
申请号：US10521118
申请日：2003-07-23
申请人： Eric J. Strang , Richard Parsons , Jody Goldfield
发明人： Eric J. Strang , Richard Parsons , Jody Goldfield
IPC分类号： G06F11/30
CPC分类号： H01J37/32192 , H01J37/32935 , H01J37/3299
摘要： The present invention provides a diagnostic system for plasma processing, wherein the diagnostic system comprises a multi-modal resonator, a power source, a detector, and a controller. The controller is coupled to the power source and the detector and it is configured to provide a man-machine interface for performing several monitoring and controlling functions associated with the diagnostic system including: a Gunn diode voltage monitor, a Gunn diode current monitor, a varactor diode voltage monitor, a detector voltage monitor, a varactor voltage control, a varactor voltage sweep control, a resonance lock-on control, a graphical user control, and an electron density monitor. The diagnostic system can further provide a remote controller coupled to the controller and configured to provide a remote man-machine interface. The remote man-machine interface. The remote man-machine interface can provide a graphical user interface in order to permit remote control of the diagnostic system by an operator. In addition, the present invention provides several methods of controlling the diagnostic system in order to perform both monitor and control functions.
摘要翻译：本发明提供了一种用于等离子体处理的诊断系统，其中诊断系统包括多模谐振器，电源，检测器和控制器。控制器耦合到电源和检测器，并且其被配置为提供用于执行与诊断系统相关联的多个监视和控制功能的人机接口，包括：耿氏二极管电压监视器，耿氏二极管电流监视器，变容二极管二极管电压监视器，检测器电压监视器，变容二极管电压控制，变容二极管电压扫描控制，共振锁定控制，图形用户控制和电子密度监视器。诊断系统还可以提供耦合到控制器并被配置为提供远程人机界面的遥控器。远程人机界面。远程人机界面可以提供图形用户界面，以便允许操作者对诊断系统进行远程控制。此外，本发明提供了几种控制诊断系统以便执行监视和控制功能的方法。

2. 发明授权

US07164236B2 Method and apparatus for improved plasma processing uniformity 有权
标题翻译：改善等离子体处理均匀性的方法和装置
公开(公告)号：US07164236B2
公开(公告)日：2007-01-16
申请号：US10793253
申请日：2004-03-05
申请人： Andrej S. Mitrovic , Eric J. Strang , Murray D. Sirkis , Bill H. Quon , Richard Parsons , Yuji Tsukamoto
发明人： Andrej S. Mitrovic , Eric J. Strang , Murray D. Sirkis , Bill H. Quon , Richard Parsons , Yuji Tsukamoto
IPC分类号： H05B31/26 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/32009 , H01J37/32091 , H01J37/32532 , H01J37/32935
摘要： A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, τi, Φi, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τi is the on-time of the RF power for the ith RF feed line, Φi is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece (176) being processed with a desired amount or degree of process uniformity.
摘要翻译：一种用于产生和控制形成在电容耦合等离子体系统（100）中的等离子体（130）的方法和装置，其具有工件支撑构件（170）形式的等离子体电极（140）和偏置电极，其中等离子体电极是单一的并且具有由多个RF馈电线（156）限定的多个区域（RF）和传递给其的RF功率。电极区域也可以被定义为由绝缘体（426）分离的电极段（420）。一组过程参数A = {n，τi，i，P i，被定义; 其中n是在位置L i1处连接到电极上表面的RF馈送线的数量，τi是针对i 是相对于其他RF馈线中选择的一个RF馈线的第i个RF馈线的相位，P < SUB> i 是通过位置L i i处的第i个RF馈线传送到电极的RF功率，S是RF功率到电极通过RF馈线。调整这些参数中的一个或多个，使得等离子体系统的操作导致以期望的量或程度的均匀度处理工件（176）。

3. 发明授权

US07732227B2 Method and apparatus for wall film monitoring 失效
标题翻译：墙膜监测方法和装置
公开(公告)号：US07732227B2
公开(公告)日：2010-06-08
申请号：US11517389
申请日：2006-09-08
申请人： Eric J. Strang , Richard Parsons
发明人： Eric J. Strang , Richard Parsons
IPC分类号： H01L21/66 , G01R31/26 , C23C14/54 , C23F1/00
CPC分类号： H01L21/67253 , G01B15/02 , H01J37/32192 , H01J37/32275 , H01J37/3299 , H01L21/67069
摘要： A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.
摘要翻译：墙膜监测系统包括等离子体处理室中的具有凹面的第一和第二微波反射镜。第二反射镜的凹面与第一反射镜的凹面相对。电源耦合到第一反射镜并且被配置为产生微波信号。检测器耦合到第一反射镜和第二反射镜中的至少一个并且被配置为测量微波信号的真空谐振电压。控制系统连接到检测器，该检测器比较第一测量电压和第二测量电压，并确定第二电压是否超过阈值。一种监测等离子体室中的壁膜的方法包括将晶片装载在室中，将微波信号输出的频率设定为谐振频率，以及测量微波信号的第一真空谐振电压。该方法包括处理晶片，测量微波信号的第二真空谐振电压，以及使用第一测量电压作为参考值来确定第二测量电压是否超过阈值。

4. 发明授权

US07214289B2 Method and apparatus for wall film monitoring 失效
公开(公告)号：US07214289B2
公开(公告)日：2007-05-08
申请号：US10493138
申请日：2002-10-24
申请人： Eric J. Strang , Richard Parsons
发明人： Eric J. Strang , Richard Parsons
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67253 , G01B15/02 , H01J37/32192 , H01J37/32275 , H01J37/3299 , H01L21/67069
摘要： A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

5. 发明授权

US07718032B2 Dry non-plasma treatment system and method of using 有权
标题翻译：干式非等离子体处理系统及其使用方法
公开(公告)号：US07718032B2
公开(公告)日：2010-05-18
申请号：US11425883
申请日：2006-06-22
申请人： Martin Kent , Eric J. Strang
发明人： Martin Kent , Eric J. Strang
IPC分类号： C23F1/00
CPC分类号： B05B12/12 , B05B12/04 , B05B13/02 , C01B7/191 , C09K13/08 , C23F1/02 , C23F1/12 , H01L21/02049 , H01L21/0337 , H01L21/0338 , H01L21/30621 , H01L21/31116 , H01L21/67069 , H01L21/67109 , H01L21/67248 , H01L21/68742
摘要： A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionally NH3, under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.
摘要翻译：描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。处理系统被配置为提供一个或多个基底的化学处理，其中每个基底在包括表面温度和气体压力的受控条件下暴露于包括HF和任选的NH 3的气态化学物质。此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

6. 发明授权

US07217336B2 Directed gas injection apparatus for semiconductor processing 有权
标题翻译：用于半导体加工的定向气体注入装置
公开(公告)号：US07217336B2
公开(公告)日：2007-05-15
申请号：US10482210
申请日：2002-06-20
申请人： Eric J. Strang
发明人： Eric J. Strang
IPC分类号： H01L21/306 , C23C16/455 , C23C16/52 , G06F19/00
CPC分类号： H01L21/67017 , H01J37/3244 , H01L21/31111 , H01L21/31116
摘要： A method and system (1) for utilizing shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system (20) as part of a plasma process system. By utilizing the shaped orifices, directionality of gas flow (25) can be improved. This improvement is especially beneficial in high aspect ratio processing.
摘要翻译：一种用于在气体注入系统（20）中利用成形孔（例如，声音和简单孔和发散喷嘴）作为等离子体处理系统的一部分的方法和系统（1）。通过利用成形孔，可以提高气流（25）的方向性。这种改进在高纵横比处理中特别有益。

7. 发明授权

US07108751B2 Method and apparatus for determining consumable lifetime 有权
标题翻译：用于确定消耗寿命的方法和装置
公开(公告)号：US07108751B2
公开(公告)日：2006-09-19
申请号：US10739126
申请日：2003-12-19
申请人： Eric J. Strang
发明人： Eric J. Strang
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306
CPC分类号： H01J37/3244 , H01J37/32935
摘要： A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system body and the consumable gas inject plate. The gas injection system is configured to receive a process gas from at least one mass flow controller and distribute the process gas to the processing region within the plasma processing device, and the pressure sensor is configured to measure a gas injection pressure within the gas injection plenum. A controller, coupled to the pressure sensor, is configured to receive a signal from the pressure sensor and to determine a state of the consumable gas inject plate based upon the signal. A method of determining the state of the consumable gas inject plate comprises: measuring a change in the gas injection pressure associated with either a change in the process gas mass flow rate or the processing pressure; determining a response time for the change in pressure; and comparing the response time during erosion to a response time during no erosion.
摘要翻译：描述了包括气体注入系统的等离子体处理装置，其中气体注入系统包括气体注入组件主体，联接到气体注入组件主体的可消耗气体注入板，以及耦合到气体注入系统气体注入系统体和消耗气体注入板。气体注入系统被配置为从至少一个质量流量控制器接收处理气体并将处理气体分配到等离子体处理装置内的处理区域，并且压力传感器被配置成测量气体注入气室内的气体注入压力。耦合到压力传感器的控制器被配置为从压力传感器接收信号并且基于该信号来确定可消耗气体注入板的状态。确定可消耗气体注入板的状态的方法包括：测量与处理气体质量流量或处理压力的变化相关联的气体注入压力的变化; 确定压力变化的响应时间; 并将侵蚀期间的响应时间与不侵蚀期间的响应时间进行比较。

8. 发明授权

US07103443B2 Directed gas injection apparatus for semiconductor processing 有权
标题翻译：用于半导体加工的定向气体注入装置
公开(公告)号：US07103443B2
公开(公告)日：2006-09-05
申请号：US10482341
申请日：2002-06-20
申请人： Eric J. Strang
发明人： Eric J. Strang
IPC分类号： G06F19/00
CPC分类号： H01J37/3244 , H01L21/67017
摘要： A method and system for utilizing a gas injection plate comprising a number of shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system as part of a plasma processing system. By utilizing the shaped orifices, directionality of gas flow can be improved. This improvement is especially beneficial in high aspect ratio processing.
摘要翻译：作为等离子体处理系统的一部分，在气体注入系统中利用包括多个成形孔（例如，声音和简单孔和发散喷嘴）的气体注射板的方法和系统。通过利用成形孔，可以改善气流的方向性。这种改进在高纵横比处理中特别有益。

9. 发明授权

US06740853B1 Multi-zone resistance heater 失效
标题翻译：多区电阻加热器
公开(公告)号：US06740853B1
公开(公告)日：2004-05-25
申请号：US10088504
申请日：2002-09-17
申请人： Wayne L. Johnson , Eric J. Strang
发明人： Wayne L. Johnson , Eric J. Strang
IPC分类号： H05B368
CPC分类号： H01L21/67109 , C23C16/4586 , C23C16/46 , H01L21/67103 , H01L21/6831
摘要： A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.
摘要翻译：用于在等离子体处理期间保持衬底（例如，晶片或LCD面板）的衬底保持器。衬底保持器是一堆处理元件，每个处理元件执行至少一个功能。这些元件包括静电卡盘（102），He气体分配系统（122），多区域加热板（132）和多区域冷却系统（152）。每个元件被设计成与处理系统的特性匹配，例如通过在正常处理期间基于衬底的热损失特性施加热量。集成设计允许对操作条件的精确控制，包括但不限于快速加热和快速冷却基板。

10. 发明授权

US08877000B2 Shower head gas injection apparatus with secondary high pressure pulsed gas injection 有权
标题翻译：带二级高压脉冲气体喷射的喷头喷气装置
公开(公告)号：US08877000B2
公开(公告)日：2014-11-04
申请号：US10469592
申请日：2002-02-26
申请人： Eric J. Strang
发明人： Eric J. Strang
IPC分类号： C23F1/00 , C23C16/50 , C23C16/52 , C23C16/455 , C23C16/509 , H01J37/32
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45557 , C23C16/5096 , H01J37/3244
摘要： A plasma-processing chamber including pulsed gas injection orifices/nozzles utilized in combination with continuous flow shower head injection orifices is described. The continuous flow shower head injection orifices introduce a continuous flow of gas while the pulsed gas injection orifices/nozzles cyclically inject a high-pressure gas into the chamber. In one embodiment, a central computer may monitor and control pressure measurement devices and utilize the measurements to adjust processing parameters (e.g. pulse duration, pulse repetition rate, and the pulse mass flow rate of processing gases).
摘要翻译：描述了一种等离子体处理室，其包括与连续喷淋头喷射孔组合使用的脉冲气体喷射孔/喷嘴。连续流喷淋头喷射孔引入连续的气体流，同时脉冲气体喷射孔/喷嘴将高压气体循环注入腔室。在一个实施例中，中央计算机可以监测和控制压力测量装置并利用测量来调整处理参数（例如脉冲持续时间，脉冲重复率和处理气体的脉冲质量流率）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式