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    • 6. 发明申请
    • Scaled-Down Phase Change Memory Cell in Recessed Heater
    • 嵌入式加热器中的缩小相变存储单元
    • US20080164452A1
    • 2008-07-10
    • US11620138
    • 2007-01-05
    • Eric Andrew JosephChung Hon LamAlejandro Gabriel Schrott
    • Eric Andrew JosephChung Hon LamAlejandro Gabriel Schrott
    • H01L45/00
    • H01L45/1233H01L27/2436H01L45/06H01L45/1246H01L45/126H01L45/144H01L45/148H01L45/1691
    • A semiconductor structure configurable for use as a nonvolatile storage element includes a first electrode, an insulating layer formed on at least a portion of an upper surface of the first electrode, and a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer. The pillar includes a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater. The structure further includes a PCM layer formed on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar. A second electrode is formed on at least a portion of an upper surface of the phase change material layer.
    • 可配置为用作非易失性存储元件的半导体结构包括第一电极,形成在第一电极的上表面的至少一部分上的绝缘层和穿过绝缘层并且相对于第一电极的上表面凹陷的柱 绝缘层。 支柱包括形成在第一电极的上表面的至少一部分上的加热器和形成在靠近加热器的绝缘层的侧壁上和在加热器的上表面的至少一部分上的套环。 该结构还包括形成在绝缘层的上表面的至少一部分上并基本上填充由加热器的上表面限定的体积和套环的上表面的至少一部分的PCM层。 第二电极形成在相变材料层的上表面的至少一部分上。