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1. 发明申请

US20070002601A1 Semiconductor memory device 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20070002601A1
公开(公告)日：2007-01-04
申请号：US11472336
申请日：2006-06-22
申请人： Eiji Hasunuma , Keizo Kawakita , Yoshinori Tanaka , Noriaki Mikasa
发明人： Eiji Hasunuma , Keizo Kawakita , Yoshinori Tanaka , Noriaki Mikasa
IPC分类号： G11C5/02
CPC分类号： G11C7/18 , G11C11/4097
摘要： Improved open bit line architecture is disclosed, comprising two types of memory cell groups, which are different in size from each other. Normal memory mats are arranged in a predetermined direction and each comprises smaller sized memory cells such as 6F2 cells. Two end memory mats are arranged to sandwich the normal memory mats in the predetermined direction and comprises larger sized memory cells such as 8F2 cells. With the architecture, some advantages of folded bit line structure are introduced into open bit line structure.
摘要翻译：公开了改进的开放位线架构，其包括彼此尺寸不同的两种类型的存储单元组。正常存储器垫按预定方向布置，并且每个都包含较小尺寸的存储单元，例如6F 2个单元。布置两个末端存储垫以沿着预定方向夹住正常的存储垫，并且包括较大尺寸的存储单元，例如8F 2个单元。利用架构，将折叠位线结构的一些优点引入开放位线结构。

2. 发明申请

US20070296053A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：半导体器件及其形成方法
公开(公告)号：US20070296053A1
公开(公告)日：2007-12-27
申请号：US11757505
申请日：2007-06-04
申请人： Eiji Hasunuma , Yoshinori Tanaka , Keizo Kawakita
发明人： Eiji Hasunuma , Yoshinori Tanaka , Keizo Kawakita
IPC分类号： H01L29/06 , H01L21/76
CPC分类号： H01L21/3247 , H01L29/0657 , H01L29/1037 , H01L29/66628
摘要： A method of forming a semiconductor device is provided. A device isolation region is formed in a semiconductor substrate, thereby defining a device region in the semiconductor substrate. The device region has a flat main surface. The flat main surface is deformed into a round surface, thereby forming a surface-rounded device region. The surface-rounded device region includes a side portion that is adjacent to a boundary with the device isolation region. The surface-rounded device region has a convex shape in vertical cross section. An epitaxial layer is selectively formed on the round surface of the surface-rounded device region. A first ion-implantation process is carried out for introducing an impurity into at least one of the epitaxial layer and the surface-rounded device region.
摘要翻译：提供一种形成半导体器件的方法。在半导体衬底中形成器件隔离区，从而在半导体衬底中限定器件区域。器件区域具有平坦的主表面。平面主表面变形为圆形表面，从而形成表面圆整装置区域。表面圆形装置区域包括与装置隔离区域的边界相邻的侧部。表面圆形装置区域在垂直截面上具有凸形形状。在表面圆整装置区域的圆形表面上选择性地形成外延层。进行第一离子注入工艺以将杂质引入到外延层和表面圆形装置区域中的至少一个中。

3. 发明授权

US07525829B2 Semiconductor storage device 失效
标题翻译：半导体存储设备
公开(公告)号：US07525829B2
公开(公告)日：2009-04-28
申请号：US11543867
申请日：2006-10-06
申请人： Keizo Kawakita , Yoshinori Tanaka
发明人： Keizo Kawakita , Yoshinori Tanaka
IPC分类号： G11C5/06
CPC分类号： G11C5/025 , G11C7/14 , G11C7/18 , G11C11/4097 , G11C11/4099 , G11C2211/4013
摘要： A semiconductor storage device that is capable of utilizing dummy cells effectively and enhancing the memory cell density. Every second row of bit lines (second bit lines) in terminal memory mats 101A, 101C is not connected to first sense amplifiers SA1. Second sense amplifiers SA2 are arranged on the outside of the terminal memory mats, and second bit lines are connected according to a folded bit line system to the second sense amplifiers SA2. Two memory cells provided at the points where a word line WL intersects with a pair of bit lines BL, /BL connected to the second sense amplifiers SA2 constitute a twin cell unit TWC for storing a single bit of data in complementary fashion.
摘要翻译：一种半导体存储装置，其能够有效地利用虚拟单元并提高存储单元的密度。端子存储垫101A，101C中的每行第二行位线（第二位线）未连接到第一读出放大器SA1。第二读出放大器SA2布置在终端存储器垫的外侧，并且第二位线根据折叠的位线系统连接到第二读出放大器SA2。在字线WL与连接到第二读出放大器SA2的一对位线BL，/ BL相交的点处提供的两个存储单元构成用于以互补方式存储单位数据的双胞单元TWC。

4. 发明申请

US20070081375A1 Semiconductor storage device 失效
标题翻译：半导体存储设备
公开(公告)号：US20070081375A1
公开(公告)日：2007-04-12
申请号：US11543867
申请日：2006-10-06
申请人： Keizo Kawakita , Yoshinori Tanaka
发明人： Keizo Kawakita , Yoshinori Tanaka
IPC分类号： G11C5/06
CPC分类号： G11C5/025 , G11C7/14 , G11C7/18 , G11C11/4097 , G11C11/4099 , G11C2211/4013
摘要： A semiconductor storage device that is capable of utilizing dummy cells effectively and enhancing the memory cell density. Every second row of bit lines (second bit lines) in terminal memory mats 101A, 101C is not connected to first sense amplifiers SA1. Second sense amplifiers SA2 are arranged on the outside of the terminal memory mats, and second bit lines are connected according to a folded bit line system to the second sense amplifiers SA2. Two memory cells provided at the points where a word line WL intersects with a pair of bit lines BL, /BL connected to the second sense amplifiers SA2 constitute a twin cell unit TWC for storing a single bit of data in complementary fashion.
摘要翻译：一种半导体存储装置，其能够有效地利用虚拟单元并提高存储单元的密度。端子存储器垫101A，101C中的每行第二行位线（第二位线）未连接到第一读出放大器SA 1。第二读出放大器SA2布置在端子存储器垫的外侧，并且第二位线根据折叠位线系统连接到第二读出放大器SA 2.两个存储单元设置在字线WL相交的点处连接到第二读出放大器SA2的一对位线BL，/ BL构成用于以互补的方式存储单位数据的双胞单元单元TWC。

5. 发明授权

US06596582B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06596582B2
公开(公告)日：2003-07-22
申请号：US10271580
申请日：2002-10-17
申请人： Yoshitaka Fujiishi , Yoshinori Tanaka , Eiji Hasunuma
发明人： Yoshitaka Fujiishi , Yoshinori Tanaka , Eiji Hasunuma
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L28/84 , H01L28/91
摘要： There can be provided a semiconductor device having a rough surface to provide an increased capacitance of a capacitor and enhanced prevention of short-circuit between capacitors, and a method of manufacturing the same. The semiconductor device includes a plug interconnection penetrating an insulating film and connected to an underlying wiring, and a storage node having a lower portion overlying the insulating film and free of a rough surface, and connected to the plug interconnection, and an upper portion overlying the lower portion of the storage node without covering a side surface of the lower portion of the storage node, and having a rough surface.
摘要翻译：可以提供具有粗糙表面以提供电容器的增加的电容并增强电容器之间短路的防止的半导体器件及其制造方法。半导体器件包括穿透绝缘膜并连接到下面的布线的插头互连，以及具有覆盖绝缘膜并且没有粗糙表面的下部并且连接到插头互连的下部的存储节点，以及覆盖存储节点的下部，而不覆盖存储节点的下部的侧表面，并且具有粗糙表面。

6. 发明授权

US09593587B2 Turbine seal fin leakage flow rate control 有权
标题翻译：涡轮密封翅片泄漏流量控制
公开(公告)号：US09593587B2
公开(公告)日：2017-03-14
申请号：US13580078
申请日：2011-01-27
申请人： Kazuyuki Matsumoto , Yoshihiro Kuwamura , Hiroharu Oyama , Yoshinori Tanaka , Asaharu Matsuo
发明人： Kazuyuki Matsumoto , Yoshihiro Kuwamura , Hiroharu Oyama , Yoshinori Tanaka , Asaharu Matsuo
IPC分类号： F01D11/00 , F01D11/08 , F16J15/447 , F01D11/02
CPC分类号： F01D11/001 , F01D11/02 , F01D11/08 , F05D2220/31 , F05D2240/127 , F05D2240/55 , F16J15/447
摘要： Provided is a turbine in which seal fins (15) are provided to a hub shroud (41) to protrude toward a bottom surface (33a) of an annular groove (33), small gaps (H) are formed between the tip ends of the seal fins and the bottom surface of the annular groove, and assuming that the axial distance between a first seal fin (15a) disposed on the front edge side of the hub shroud among the seal fins and a front edge (41a) of the hub shroud is (L) and the axial distance between the front edge of the hub shroud and an inside surface (33b) of the annular groove is (Bu), the first seal fin is disposed to satisfy L/Bu
摘要翻译：本发明提供一种涡轮机，其中，密封翅片（15）设置在轮毂护罩（41）上，朝向环状槽（33）的底面（33a）突出，在密封翅片和环形槽的底面，并且假设设置在密封翅片之间的轮毂罩的前边缘侧的第一密封翅片（15a）与轮毂罩的前边缘（41a）之间的轴向距离是（L），轮毂罩的前缘与环状槽的内侧面（33b）之间的轴向距离为（Bu），第一密封翅片设置为满足L / Bu <0.3。

7. 发明授权

US09542562B2 Display system, display method, display terminal and non-transitory computer-readable recording medium stored with display program 有权
标题翻译：显示系统，显示方法，显示终端和存储有显示程序的非暂时性计算机可读记录介质
公开(公告)号：US09542562B2
公开(公告)日：2017-01-10
申请号：US14253715
申请日：2014-04-15
申请人： Yasuyuki Kamai , Yoshinori Tanaka
发明人： Yasuyuki Kamai , Yoshinori Tanaka
IPC分类号： H04L29/06 , G06F21/60 , G06F3/14 , G09G5/14
CPC分类号： G06F21/604 , G06F3/14 , G09G5/14 , G09G2370/16
摘要： A display system for displaying a document includes a tablet terminal and a head mounted display device (HMD). The tablet terminal includes a display device which does not display confidential information that a third party is not allowed to browse, but displays non-confidential information that the third party is allowed to browse with regard to the document. The HMD includes a glasses-type display unit which does not allow the third party to browse, but allows a HMD user to browse, a communication unit which receives the confidential information, and a video camera for capturing the non-confidential information displayed on the display device. The glasses-type display unit, based on the captured non-confidential information, displays the received confidential information so that the received confidential information is visually recognized by the HMD user in a state of being aligned with the non-confidential information displayed on the display device.
摘要翻译：用于显示文档的显示系统包括平板电脑终端和头戴式显示设备（HMD）。平板电脑终端包括不显示不允许第三方浏览的机密信息的显示装置，但是显示关于文档允许第三方浏览的非机密信息。 HMD包括不允许第三方浏览但允许HMD用户浏览接收机密信息的通信单元的眼镜型显示单元和用于捕获显示在其上的非机密信息的摄像机显示设备。眼镜型显示单元基于所捕获的非机密信息，显示接收到的机密信息，使得HMD用户在与显示在显示器上的非机密信息对齐的状态下视觉识别所接收到的机密信息设备。

8. 发明授权

US09319949B2 Communication setting method, wireless base station, and mobile station 有权
标题翻译：通信设置方法，无线基站，移动台
公开(公告)号：US09319949B2
公开(公告)日：2016-04-19
申请号：US13751979
申请日：2013-01-28
申请人： Yoshinori Tanaka
发明人： Yoshinori Tanaka
IPC分类号： H04W36/00 , H04W36/02 , H04B7/02 , H04W36/18
CPC分类号： H04W36/02 , H04B7/024 , H04W36/0055 , H04W36/18
摘要： In a mobile communication system in an embodiment, when a handover of a mobile station which is a target of coordinated communications among multiple wireless base stations is detected, at least a part of setting procedure for the coordinated communications (CoMP setting procedure) is executed before completion of the handover. Hence, the coordinated transmission for the mobile station can be resumed earlier after the handover, and any reduction in the communication quality or throughput caused by the resume of the coordinated communication after the handover of the mobile station can be prevented.
摘要翻译：在实施方式的移动通信系统中，在检测到作为多个无线基站的协调通信对象的移动台的切换时，在协调通信（CoMP设定步骤）的至少一部分设定步骤之前，完成切换。因此，可以在切换之后更早地恢复移动台的协调传输，并且可以防止由移动台切换之后的协调通信的恢复引起的通信质量或吞吐量的任何降低。

9. 发明授权

US09246665B2 Transmitting apparatus, receiving apparatus, and communication method 有权
公开(公告)号：US09246665B2
公开(公告)日：2016-01-26
申请号：US13926578
申请日：2013-06-25
申请人： Yoshinori Tanaka , Yoshihiro Kawasaki
发明人： Yoshinori Tanaka , Yoshihiro Kawasaki
IPC分类号： H04W24/00 , H04L5/06 , H04L1/00 , H04L1/16 , H04W56/00 , H04L5/00
CPC分类号： H04L5/06 , H04L1/0028 , H04L1/1607 , H04L5/0007 , H04L5/0023 , H04L5/0037 , H04L5/0048 , H04L5/0053 , H04L5/0094 , H04W56/00
摘要： A transmitting apparatus is capable of transmitting data at a first frequency and second frequency to a receiving apparatus. A transmitter of the transmitting apparatus transmits a predetermined wideband signal, in a first time period in a frequency band which does not include the first frequency and in a second time period in a frequency band which does not include the second frequency. A quality measuring unit of the receiving apparatus measures the quality of communication with the transmitting apparatus based on the wideband signal received in the first and second time periods.

10. 发明授权

US08956961B2 Semiconductor device and method for making the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08956961B2
公开(公告)日：2015-02-17
申请号：US13415959
申请日：2012-03-09
申请人： Kazuaki Takesako , Wen-Kuei Hsu , Yoshinori Tanaka , Yukihiro Nagai , Chih-Wei Hsiung , Hirotake Fujita , Tomohiro Kadoya , Wei-Chih Liu , Hsuan-Yu Fang , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Chung-Yung Ai , Yu-Shan Hsu , Wei-Che Chang , Chun-Hua Huang
发明人： Kazuaki Takesako , Wen-Kuei Hsu , Yoshinori Tanaka , Yukihiro Nagai , Chih-Wei Hsiung , Hirotake Fujita , Tomohiro Kadoya , Wei-Chih Liu , Hsuan-Yu Fang , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Chung-Yung Ai , Yu-Shan Hsu , Wei-Che Chang , Chun-Hua Huang
IPC分类号： H01L21/02
CPC分类号： H01L21/2257 , H01L21/2236 , H01L27/10823 , H01L27/10876 , H01L27/10885 , H01L29/41741 , H01L29/66666 , H01L29/7827
摘要： A semiconductor device includes: a substrate having a base and an array of semiconductor pillars extending from the base, the substrate being formed with a plurality of trenches, each of which extends into the base and has two opposing trench side walls; a first insulative liner layer formed on each of the trench side walls of each of the trenches and divided into upper and lower segments by a gap that leaves a bit-forming surface of each of the trench side walls uncovered by the first insulative liner layer; and a plurality of buried bit lines, each of which extends into the base from the bit-forming surface of a respective one of the trench side walls of each of the trenches.
摘要翻译：半导体器件包括：具有基底和从基底延伸的半导体柱阵列的衬底，衬底形成有多个沟槽，每个沟槽延伸到衬底中并且具有两个相对的沟槽侧壁; 第一绝缘衬垫层，其形成在每个沟槽的每个沟槽侧壁上，并且通过间隙留下每个沟槽侧壁的位形成表面，该间隙未被第一绝缘衬垫层覆盖; 以及多个掩埋位线，每个埋入位线从每个沟槽的相应一个沟槽侧壁的位形成表面延伸到基座中。

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