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    • 4. 发明授权
    • Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film
    • 形成图案的方法,用于形成上层膜的组合物和用于形成底层膜的组合物
    • US08119324B2
    • 2012-02-21
    • US12375915
    • 2007-07-27
    • Hikaru SugitaNobuji MatsumuraDaisuke ShimizuToshiyuki KaiTsutomu Shimokawa
    • Hikaru SugitaNobuji MatsumuraDaisuke ShimizuToshiyuki KaiTsutomu Shimokawa
    • G03F7/00G03F7/004G03F7/20G03F7/26G03F7/40
    • G03F7/11G03F7/0045G03F7/0757G03F7/265
    • A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided. The method includes the following steps in the following order: (1) a step of forming and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate, (2) a step of irradiating the under-layer film with radiation through a mask to cause an acid to be selectively generated in the exposed area of the under-layer film, (3) a step of forming an upper-layer film which does not contain a radiation-sensitive acid generator, but contains a composition capable of polymerization or crosslinking by the action of an acid, (4) a step of forming a cured film by polymerization or crosslinking selectively in the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has been generated, and (5) a step of removing the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has not been generated.
    • 提供了适用于使用电子束(EB),X射线或极紫外线(EUV)形成微图案的图形形成方法。 该方法按以下顺序包括以下步骤:(1)形成和固化含有辐射敏感性酸产生剂的底层膜的步骤,所述辐射敏感酸产生剂在暴露于基材上时产生酸,(2)步骤 通过掩模用辐射照射底层膜以在底层膜的暴露区域中选择性地产生酸,(3)形成不含辐射敏感性的上层膜的步骤 酸产生剂,但含有能够通过酸的作用聚​​合或交联的组合物,(4)通过聚合或选择性地在上层膜对应于下面的区域的区域中选择性地交联固化膜的步骤 产生酸的层 - 膜,以及(5)除去与未生成酸的下层膜的面积对应的上层膜的面积的工序。