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1. 发明申请

US20100112776A1 APPARATUS FOR FORMING CONDUCTOR, METHOD FOR FORMING CONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于形成导体的装置，形成导体的方法和制造半导体器件的方法
公开(公告)号：US20100112776A1
公开(公告)日：2010-05-06
申请号：US12685408
申请日：2010-01-11
申请人： Eiichi Kondoh , Michiru Hirose , Hitoshi Tanaka , Masayuki Satoh , Hisashi Yano , Masaki Yoshimaru
发明人： Eiichi Kondoh , Michiru Hirose , Hitoshi Tanaka , Masayuki Satoh , Hisashi Yano , Masaki Yoshimaru
IPC分类号： H01L21/02 , B05D5/12
CPC分类号： H01L21/283 , C23C18/06 , C23C18/08 , H01L21/76879
摘要： A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.
摘要翻译：导体形成装置包括反应容器，其中容纳有处理目标，其表面上形成有要在其中设置导体的凹部，并且在凹部中提供导体的过程在容器内部被执行将与金属化合物一起溶解的超临界流体供给到容器内，从外部向容器内部供给流体的供给装置以及将未从内部排出的流体从内部排出到在容器外部，其中通过由供应装置连续地将流体供给到容器中并且通过排出物将不被处理的流体连续排出到容器的外部来调节容器中的流体的量设备。

2. 发明申请

US20080233705A1 METHOD FOR SELECTIVELY FORMING ELECTRIC CONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：选择形成电导体的方法和制造半导体器件的方法
公开(公告)号：US20080233705A1
公开(公告)日：2008-09-25
申请号：US11688684
申请日：2007-03-20
申请人： Eiichi Kondoh , Michiru Hirose , Hitoshi Tanaka , Masayuki Satoh , Hisashi Yano , Masaki Yoshimaru
发明人： Eiichi Kondoh , Michiru Hirose , Hitoshi Tanaka , Masayuki Satoh , Hisashi Yano , Masaki Yoshimaru
IPC分类号： H01L21/20
CPC分类号： H01L21/76879 , C23C18/1216 , C23C18/1279 , C23C18/1283 , H01L21/288 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.
摘要翻译：一种用于选择性地形成电导体的方法，所述方法包括在包括超临界流体的气氛中设置处理对象和金属化合物，所述处理对象在其上形成有至少一个用于提供导电体的凹部，所述金属化合物包括金属作为电导体的主要成分，将至少一部分金属化合物溶解在超临界流体中，选择性地将溶解在超临界流体中的金属化合物导入到与加工对象的表面接触的凹部中，所述金属化合物引入所述凹部中以将所述金属从所述金属化合物中沉淀出来并将所述金属凝结在所述凹部中沉淀，由此在所述凹部中提供所述电导体。

3. 发明授权

US07892975B2 Method for selectively forming electric conductor and method for manufacturing semiconductor device 有权
标题翻译：用于选择性地形成导电体的方法和用于制造半导体器件的方法
公开(公告)号：US07892975B2
公开(公告)日：2011-02-22
申请号：US11688684
申请日：2007-03-20
申请人： Eiichi Kondoh , Michiru Hirose , Hitoshi Tanaka , Masayuki Satoh , Hisashi Yano , Masaki Yoshimaru
发明人： Eiichi Kondoh , Michiru Hirose , Hitoshi Tanaka , Masayuki Satoh , Hisashi Yano , Masaki Yoshimaru
IPC分类号： H01L21/441
CPC分类号： H01L21/76879 , C23C18/1216 , C23C18/1279 , C23C18/1283 , H01L21/288 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.
摘要翻译：一种用于选择性地形成电导体的方法，所述方法包括在包括超临界流体的气氛中设置处理对象和金属化合物，所述处理对象在其上形成有至少一个用于提供导电体的凹部，所述金属化合物包括金属作为电导体的主要成分，将至少一部分金属化合物溶解在超临界流体中，选择性地将溶解在超临界流体中的金属化合物导入到与加工对象的表面接触的凹部中，所述金属化合物引入所述凹部中以将所述金属从所述金属化合物中沉淀出来并将所述金属凝结在所述凹部中沉淀，由此在所述凹部中提供所述电导体。

4. 发明申请

US20080206949A1 APPARATUS FOR FORMING CONDUCTOR, METHOD FOR FORMING CONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于形成导体的装置，形成导体的方法和制造半导体器件的方法
公开(公告)号：US20080206949A1
公开(公告)日：2008-08-28
申请号：US11845615
申请日：2007-08-27
申请人： Eiichi Kondoh , Michiru Hirose , Hitoshi Tanaka , Masayuki Satoh , Hisashi Yano , Masaki Yoshimaru
发明人： Eiichi Kondoh , Michiru Hirose , Hitoshi Tanaka , Masayuki Satoh , Hisashi Yano , Masaki Yoshimaru
IPC分类号： H01L21/44 , B05C11/00
CPC分类号： H01L21/283 , C23C18/06 , C23C18/08 , H01L21/76879
摘要： A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.
摘要翻译：导体形成装置包括反应容器，其中容纳有处理目标，其表面上形成有要在其中设置导体的凹部，并且在凹部中提供导体的过程在容器内部被执行将与金属化合物一起溶解的超临界流体供给到容器内，从外部向容器内部供给流体的供给装置以及将未从内部排出的流体从内部排出到在容器外部，其中通过由供应装置连续地将流体供给到容器中并且通过排出物将不被处理的流体连续排出到容器的外部来调节容器中的流体的量设备。

5. 发明授权

US08633758B2 Semiconductor device having boosting circuit 失效
标题翻译：具有升压电路的半导体装置
公开(公告)号：US08633758B2
公开(公告)日：2014-01-21
申请号：US13064237
申请日：2011-03-11
申请人： Hiroki Fujisawa , Shuichi Kubouchi , Hitoshi Tanaka
发明人： Hiroki Fujisawa , Shuichi Kubouchi , Hitoshi Tanaka
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F1/46 , G11C5/145 , H02M1/15 , H02M3/07 , H02M2001/0045
摘要： A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.
摘要翻译：一种半导体器件包括：升压电路，其根据外部电源电压升压升压范围内的内部电源电压;将外部电源电压与规定的基准电压进行比较的外部电压电平比较电路;以及可变电阻器电路包括连接到升压电路的输出端子的可变电阻器。可变电阻电路基于外部电压电平比较电路的比较结果来控制可变电阻器的电阻值。

6. 发明授权

US08620564B2 Abnormality detection apparatus and abnormality detection method for multi-cylinder internal combustion engine 有权
标题翻译：多气缸内燃机异常检测装置及异常检测方法
公开(公告)号：US08620564B2
公开(公告)日：2013-12-31
申请号：US13480921
申请日：2012-05-25
申请人： Masashi Hakariya , Isao Nakajima , Yoshihisa Oda , Hitoshi Tanaka , Kiyotaka Kushihama , Shota Kitano , Kazuyuki Noda , Katsumi Adachi , Yuichi Kohara , Akihiro Katayama
发明人： Masashi Hakariya , Isao Nakajima , Yoshihisa Oda , Hitoshi Tanaka , Kiyotaka Kushihama , Shota Kitano , Kazuyuki Noda , Katsumi Adachi , Yuichi Kohara , Akihiro Katayama
IPC分类号： B60T7/12 , G05D1/00 , G06F7/00 , G06F17/00
CPC分类号： F02D41/1498 , F02D41/0085 , F02D41/1495 , F02D41/22 , F02D41/3076
摘要： An abnormality detection apparatus for a multi-cylinder internal combustion engine changes a fuel injection quantity of a predetermined target cylinder to detect an abnormality of an internal combustion engine based on values of rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity. The abnormality detection apparatus corrects the values of the rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity based on at least one of the number of revolutions of the engine and an engine load at a corresponding detection time.
摘要翻译：用于多气缸内燃机的异常检测装置根据与在目标气缸的变化之前和之后检测到的目标气缸相关的旋转变化的值来改变预定目标气缸的燃料喷射量以检测内燃机的异常燃油喷射量。异常检测装置在相应的检测时间的基础上，基于发动机的转数和发动机负荷中的至少一方来校正与燃料喷射量的变化前后检测到的目标气缸的旋转变动的值。

7. 发明授权

US08493132B2 Supply voltage generating circuit 有权
公开(公告)号：US08493132B2
公开(公告)日：2013-07-23
申请号：US12052422
申请日：2008-03-20
申请人： Koichiro Hayashi , Hitoshi Tanaka
发明人： Koichiro Hayashi , Hitoshi Tanaka
IPC分类号： G05F1/10
CPC分类号： G05F3/02 , G05F1/62 , G11C5/145 , G11C11/4074 , H02M3/07
摘要： A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.

8. 发明授权

US08471673B2 Varistor and method for manufacturing varistor 有权
标题翻译：压敏电阻及其制造方法
公开(公告)号：US08471673B2
公开(公告)日：2013-06-25
申请号：US13545505
申请日：2012-07-10
申请人： Hitoshi Tanaka , Katsunari Moriai , Takahiro Itami
发明人： Hitoshi Tanaka , Katsunari Moriai , Takahiro Itami
IPC分类号： H01C7/10
CPC分类号： H01C1/14 , H01C7/00 , H01C7/10 , H01C17/28 , Y10T29/49082 , Y10T29/49085
摘要： A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.
摘要翻译：变阻器设置有可变电阻元件主体，多个内部电极，布置在可变电阻元件主体中，以将可变电阻元件主体的局部区域夹在它们之间;以及多个外部电极，布置在可变电阻元件的表面上并连接到相应的内部电极。外部电极具有烧结电极层，该烧结电极层通过将含有碱金属的导电膏附着到可变电阻元件体的表面并烧结而形成。可变电阻元件体具有通过将可变电阻元件体的表面与烧结电极层之间的界面将导电浆中的碱金属扩散到可变电阻元件体中而形成的高电阻区域。

9. 发明申请

US20100164607A1 SEMICONDUCTOR DEVICE THAT CAN ADJUST SUBSTRATE VOLTAGE 有权
标题翻译：可调节基极电压的半导体器件
公开(公告)号：US20100164607A1
公开(公告)日：2010-07-01
申请号：US12647259
申请日：2009-12-24
申请人： Shinichi Miyatake , Seiji Narui , Hitoshi Tanaka
发明人： Shinichi Miyatake , Seiji Narui , Hitoshi Tanaka
IPC分类号： G05F1/10
CPC分类号： G05F3/205 , G05F1/46
摘要： To provide a semiconductor device including: a MOS transistor formed in a semiconductor substrate and have a threshold voltage to be adjusted, a replica transistor of the MOS transistor, a monitoring circuit monitors a gate/source voltage needed when the replica transistor flows a current having a given designed value, a negative voltage pumping circuit generates a substrate voltage of the MOS transistor, based on an output from the monitoring circuit, and a limiting circuit defines the operation of the negative voltage pumping circuit, regardless of a monitoring result of the monitoring circuit, in response to an excess of the substrate voltage with respect to a predetermined value.
摘要翻译：为了提供一种半导体器件，包括：形成在半导体衬底中并具有要调节的阈值电压的MOS晶体管，MOS晶体管的复制晶体管，监视电路监视当复制晶体管流过具有给定的设计值，负电压泵浦电路基于监控电路的输出产生MOS晶体管的衬底电压，并且限制电路定义负电压抽运电路的操作，而不管监视的监视结果如何电路，响应于相对于预定值的衬底电压的过量。

10. 发明授权

US07712395B2 Automatic transmission 有权
标题翻译：自动变速器
公开(公告)号：US07712395B2
公开(公告)日：2010-05-11
申请号：US11225202
申请日：2005-09-14
申请人： Fuminori Suzuki , Hitoshi Tanaka
发明人： Fuminori Suzuki , Hitoshi Tanaka
IPC分类号： F16H57/02
CPC分类号： F16H61/0009 , B60R16/0207 , F16H57/04 , F16H57/0412 , Y10T74/2186
摘要： An automatic transmission includes a pressure adjusting unit that controls hydraulic pressure supplied to a transmission mechanism by the operation of a solenoid valve. A housing has a heat radiating portion for radiating heat to the outside and houses the pressure adjusting unit. A first connector is so arranged as to pass through the housing and has a control circuit unit electrically connected to the solenoid valve of the pressure adjusting unit. A second connector is electrically connected to an engine control unit outside the housing and engages with the first connector and the heat radiating portion. The second connector is electrically connected to the control circuit unit and presses the first connector onto the heat radiating portion.
摘要翻译：自动变速器包括压力调节单元，其通过电磁阀的操作来控制供给变速机构的液压。壳体具有用于将热量散发到外部并容纳压力调节单元的散热部分。第一连接器布置成穿过壳体并具有电连接到压力调节单元的电磁阀的控制电路单元。第二连接器电连接到壳体外部的发动机控制单元，并与第一连接器和散热部分接合。第二连接器电连接到控制电路单元并将第一连接器按压到散热部分上。

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