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1. 发明授权

US08633758B2 Semiconductor device having boosting circuit 失效
标题翻译：具有升压电路的半导体装置
公开(公告)号：US08633758B2
公开(公告)日：2014-01-21
申请号：US13064237
申请日：2011-03-11
申请人： Hiroki Fujisawa , Shuichi Kubouchi , Hitoshi Tanaka
发明人： Hiroki Fujisawa , Shuichi Kubouchi , Hitoshi Tanaka
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F1/46 , G11C5/145 , H02M1/15 , H02M3/07 , H02M2001/0045
摘要： A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.
摘要翻译：一种半导体器件包括：升压电路，其根据外部电源电压升压升压范围内的内部电源电压;将外部电源电压与规定的基准电压进行比较的外部电压电平比较电路;以及可变电阻器电路包括连接到升压电路的输出端子的可变电阻器。可变电阻电路基于外部电压电平比较电路的比较结果来控制可变电阻器的电阻值。

2. 发明申请

US20110221513A1 Semiconductor device having boosting circuit 失效
标题翻译：具有升压电路的半导体装置
公开(公告)号：US20110221513A1
公开(公告)日：2011-09-15
申请号：US13064237
申请日：2011-03-11
申请人： Hiroki Fujisawa , Shuichi Kubouchi , Hitoshi Tanaka
发明人： Hiroki Fujisawa , Shuichi Kubouchi , Hitoshi Tanaka
IPC分类号： G05F1/10
CPC分类号： G05F1/46 , G11C5/145 , H02M1/15 , H02M3/07 , H02M2001/0045
摘要： A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.
摘要翻译：一种半导体器件包括：升压电路，其根据外部电源电压升压升压范围内的内部电源电压;将外部电源电压与规定的基准电压进行比较的外部电压电平比较电路;以及可变电阻器电路包括连接到升压电路的输出端子的可变电阻器。可变电阻电路基于外部电压电平比较电路的比较结果来控制可变电阻器的电阻值。

3. 发明申请

US20090002048A1 Reference voltage generating circuit 有权
标题翻译：参考电压发生电路
公开(公告)号：US20090002048A1
公开(公告)日：2009-01-01
申请号：US12230489
申请日：2008-08-29
申请人： Hiroki Fujisawa , Masayuki Nakamura , Hitoshi Tanaka
发明人： Hiroki Fujisawa , Masayuki Nakamura , Hitoshi Tanaka
IPC分类号： H03L5/00
CPC分类号： G05F3/30
摘要： Disclosed is a reference voltage generating circuit which includes resistors R0, R0 and R3, a differential amplifier A1 and transistors Q1, Q2 and Q3. The collectors of the transistors Q1 and Q2 are connected to differential input terminals of the differential amplifier, while one ends of the R0, R0 and R3 are connected in common to an output of the differential amplifier A1. The other ends of the two resistors R0 are connected in common to the collectors of the transistors Q1 and Q2, while the other end of the resistor R1 is connected to the collector and the base of the transistor Q3, which transistor Q3 has the base connected to the bases of the transistors Q1 and Q2. The emitter size ratio of the transistors Q1 and Q2 is set to 1:N. A current of a value approximately equal to that of the collector current of the transistor Q1 or Q2 and a current with a positive temperature coefficient larger than the first-stated current are caused to flow through the resistor R1. The reference voltage generating circuit outputs a voltage corresponding to the sum of a voltage generated across both ends of the resistor R1 and a base-to-emitter voltage VBE3 of the transistor Q3.
摘要翻译：公开了一种参考电压产生电路，其包括电阻器R0，R0和R3，差分放大器A1和晶体管Q1，Q2和Q3。晶体管Q1和Q2的集电极连接到差分放大器的差分输入端，而R0，R0和R3的一端共同连接到差分放大器A1的输出端。两个电阻R0的另一端共同连接到晶体管Q1和Q2的集电极，而电阻器R1的另一端连接到晶体管Q3的集电极和基极，晶体管Q3的基极连接到晶体管Q1和Q2的基极。晶体管Q1和Q2的发射极尺寸比设定为1：N。导致大致等于晶体管Q1或Q2的集电极电流的值的电流和大于先前电流的正温度系数的电流流过电阻器R1。参考电压产生电路输出与电阻器R1两端产生的电压和晶体管Q3的基极 - 发射极电压VBE3之和的和相对应的电压。

4. 发明申请

US20080059110A1 Semiconductor integrated circuit supplying temperature signal as digital value 审中-公开
标题翻译：半导体集成电路提供温度信号作为数字值
公开(公告)号：US20080059110A1
公开(公告)日：2008-03-06
申请号：US11896295
申请日：2007-08-30
申请人： Hiroki Fujisawa , Hitoshi Tanaka , Atsuo Koshizuka
发明人： Hiroki Fujisawa , Hitoshi Tanaka , Atsuo Koshizuka
IPC分类号： G01K1/00
CPC分类号： G01K7/015 , G01K2219/00
摘要： A semiconductor integrated circuit includes a temperature detecting unit that detects the temperature of a chip, and an A/D converter that converts an analog output VBE from the temperature detecting unit into a digital output. The A/D converter includes an up/down counter, a D/A converter that converts an output T2 from the up/down counter into an analog output, and a comparator that compares the analog output DAC_OUT of the D/A converter and the analog output VBE (VTEMP) of the temperature detecting unit. The up/down counter is adapted to be able to preset an initial value that is different from the minimum value or the maximum value. Accordingly, the determination time required at the initial conversion can be reduced although the linear search method is used.
摘要翻译：半导体集成电路包括检测芯片的温度的温度检测单元和将来自温度检测单元的模拟输出VBE转换为数字输出的A / D转换器。 A / D转换器包括一个向上/向下计数器，一个将输出T 2从上/下计数器转换为模拟输出的D / A转换器，以及比较器，用于将D / A转换器的模拟输出DAC_OUT和温度检测单元的模拟输出VBE（VTEMP）。上/下计数器适于能够预设不同于最小值或最大值的初始值。因此，尽管使用线性搜索方法，但是可以减少初始转换所需的确定时间。

5. 发明授权

US07750726B2 Reference voltage generating circuit 有权
标题翻译：基准电压发生电路
公开(公告)号：US07750726B2
公开(公告)日：2010-07-06
申请号：US12230489
申请日：2008-08-29
申请人： Hiroki Fujisawa , Masayuki Nakamura , Hitoshi Tanaka
发明人： Hiroki Fujisawa , Masayuki Nakamura , Hitoshi Tanaka
IPC分类号： G05F3/02 , G05F1/10
CPC分类号： G05F3/30
摘要： A reference voltage generating circuit includes a current generating section, a voltage generating section, a voltage dividing circuit, and a synthesis section. The current generating section generates a first current having a positive temperature coefficient. The voltage generating section generates a voltage having a negative temperature coefficient. The voltage dividing circuit divides the voltage of the negative temperature coefficient, generated by the voltage generating section. The synthesis section generates a voltage which is the sum of a terminal voltage obtained on causing the first current through a resistor and a voltage obtained on dividing the voltage having the negative temperature coefficient by the voltage dividing circuit, and outputs the sum voltage generated as a reference voltage.
摘要翻译：参考电压产生电路包括电流产生部分，电压产生部分，分压电路和合成部分。电流产生部分产生具有正温度系数的第一电流。电压产生部分产生具有负温度系数的电压。分压电路分压由电压产生部产生的负温度系数的电压。合成部分产生电压，该电压是通过使通过电阻器的第一电流获得的端电压与通过分压电路分压具有负温度系数的电压获得的电压之和，并输出产生的和电压参考电压。

6. 发明申请

US20070132506A1 Reference voltage generating circuit 有权
标题翻译：参考电压发生电路
公开(公告)号：US20070132506A1
公开(公告)日：2007-06-14
申请号：US11603121
申请日：2006-11-22
申请人： Hiroki Fujisawa , Masayuki Nakamura , Hitoshi Tanaka
发明人： Hiroki Fujisawa , Masayuki Nakamura , Hitoshi Tanaka
IPC分类号： G05F1/10
CPC分类号： G05F3/30
摘要： Disclosed is a reference voltage generating circuit which includes resistors R0, R0 and R3, a differential amplifier A1 and transistors Q1, Q2 and Q3. The collectors of the transistors Q1 and Q2 are connected to differential input terminals of the differential amplifier, while one ends of the R0, R0 and R3 are connected in common to an output of the differential amplifier A1. The other ends of the two resistors R0 are connected in common to the collectors of the transistors Q1 and Q2, while the other end of the resistor R1 is connected to the collector and the base of the transistor Q3, which transistor Q3 has the base connected to the bases of the transistors Q1 and Q2. The emitter size ratio of the transistors Q1 and Q2 is set to 1:N. A current of a value approximately equal to that of the collector current of the transistor Q1 or Q2 and a current with a positive temperature coefficient larger than the first-stated current are caused to flow through the resistor R1. The reference voltage generating circuit outputs a voltage corresponding to the sum of a voltage generated across both ends of the resistor R1 and a base-to-emitter voltage VBE3 of the transistor Q3.
摘要翻译：公开了一种参考电压发生电路，其包括电阻器R 0，R 0和R 3，差分放大器A 1和晶体管Q 1，Q 2和Q 3。晶体管Q 1和Q 2的集电极连接到差分放大器的差分输入端，而R 0，R 0和R 3的一端共同连接到差分放大器A 1的输出端。两个电阻R 0的另一端共同连接到晶体管Q 1和Q 2的集电极，而电阻器R 1的另一端连接到晶体管Q 3的集电极和基极，该晶体管Q 3 Q 3的基极连接到晶体管Q 1和Q 2的基极。晶体管Q 1和Q 2的发射极尺寸比被设定为1：N。导致大致等于晶体管Q 1或Q 2的集电极电流的值的电流和具有大于第一电流的正温度系数的电流流过电阻器R 1。参考电压产生电路输出与电阻器R 1的两端产生的电压和晶体管Q 3的基极 - 发射极电压V BE3 / N之和的和相对应的电压。

7. 发明授权

US07541862B2 Reference voltage generating circuit 有权
标题翻译：基准电压发生电路
公开(公告)号：US07541862B2
公开(公告)日：2009-06-02
申请号：US11603121
申请日：2006-11-22
申请人： Hiroki Fujisawa , Masayuki Nakamura , Hitoshi Tanaka
发明人： Hiroki Fujisawa , Masayuki Nakamura , Hitoshi Tanaka
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F3/30
摘要： A reference voltage generating circuit is described. The circuit includes a current generating section that generates a first current having a positive temperature coefficient, a voltage generating section that generates a voltage having a negative temperature coefficient, a synthesis section that generates a voltage which is the sum of a voltage having a positive temperature coefficient and developed across both terminals of a resistor, where the voltage has a negative temperature coefficient, and a compensation current generating section that generates a second current having a positive temperature coefficient. The current corresponding to the sum of said first and second currents is caused to flow through the resistor. The synthesis section generates a voltage which is a sum of a terminal voltage of the resistor by the sum current of the first and second currents and the voltage having a negative temperature coefficient.
摘要翻译：描述参考电压产生电路。该电路包括产生具有正温度系数的第一电流的电流产生部分，产生具有负温度系数的电压的电压产生部分，产生与具有正温度的电压之和的电压的合成部分系数，并且在电压具有负温度系数的电阻器的两端开发，以及产生具有正温度系数的第二电流的补偿电流产生部。使与第一和第二电流之和相对应的电流流过电阻器。合成部分产生电阻的端点电压与第一和第二电流的和电流与负温度系数的电压之和的电压。

8. 发明授权

US08620564B2 Abnormality detection apparatus and abnormality detection method for multi-cylinder internal combustion engine 有权
标题翻译：多气缸内燃机异常检测装置及异常检测方法
公开(公告)号：US08620564B2
公开(公告)日：2013-12-31
申请号：US13480921
申请日：2012-05-25
申请人： Masashi Hakariya , Isao Nakajima , Yoshihisa Oda , Hitoshi Tanaka , Kiyotaka Kushihama , Shota Kitano , Kazuyuki Noda , Katsumi Adachi , Yuichi Kohara , Akihiro Katayama
发明人： Masashi Hakariya , Isao Nakajima , Yoshihisa Oda , Hitoshi Tanaka , Kiyotaka Kushihama , Shota Kitano , Kazuyuki Noda , Katsumi Adachi , Yuichi Kohara , Akihiro Katayama
IPC分类号： B60T7/12 , G05D1/00 , G06F7/00 , G06F17/00
CPC分类号： F02D41/1498 , F02D41/0085 , F02D41/1495 , F02D41/22 , F02D41/3076
摘要： An abnormality detection apparatus for a multi-cylinder internal combustion engine changes a fuel injection quantity of a predetermined target cylinder to detect an abnormality of an internal combustion engine based on values of rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity. The abnormality detection apparatus corrects the values of the rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity based on at least one of the number of revolutions of the engine and an engine load at a corresponding detection time.
摘要翻译：用于多气缸内燃机的异常检测装置根据与在目标气缸的变化之前和之后检测到的目标气缸相关的旋转变化的值来改变预定目标气缸的燃料喷射量以检测内燃机的异常燃油喷射量。异常检测装置在相应的检测时间的基础上，基于发动机的转数和发动机负荷中的至少一方来校正与燃料喷射量的变化前后检测到的目标气缸的旋转变动的值。

9. 发明授权

US08493132B2 Supply voltage generating circuit 有权
公开(公告)号：US08493132B2
公开(公告)日：2013-07-23
申请号：US12052422
申请日：2008-03-20
申请人： Koichiro Hayashi , Hitoshi Tanaka
发明人： Koichiro Hayashi , Hitoshi Tanaka
IPC分类号： G05F1/10
CPC分类号： G05F3/02 , G05F1/62 , G11C5/145 , G11C11/4074 , H02M3/07
摘要： A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.

10. 发明授权

US08471673B2 Varistor and method for manufacturing varistor 有权
标题翻译：压敏电阻及其制造方法
公开(公告)号：US08471673B2
公开(公告)日：2013-06-25
申请号：US13545505
申请日：2012-07-10
申请人： Hitoshi Tanaka , Katsunari Moriai , Takahiro Itami
发明人： Hitoshi Tanaka , Katsunari Moriai , Takahiro Itami
IPC分类号： H01C7/10
CPC分类号： H01C1/14 , H01C7/00 , H01C7/10 , H01C17/28 , Y10T29/49082 , Y10T29/49085
摘要： A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.
摘要翻译：变阻器设置有可变电阻元件主体，多个内部电极，布置在可变电阻元件主体中，以将可变电阻元件主体的局部区域夹在它们之间;以及多个外部电极，布置在可变电阻元件的表面上并连接到相应的内部电极。外部电极具有烧结电极层，该烧结电极层通过将含有碱金属的导电膏附着到可变电阻元件体的表面并烧结而形成。可变电阻元件体具有通过将可变电阻元件体的表面与烧结电极层之间的界面将导电浆中的碱金属扩散到可变电阻元件体中而形成的高电阻区域。

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