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1. 发明申请

WO03043074A2 SEMICONDUCTOR COMPONENT AND METHOD FOR CONTACTING SAID SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：半导体部件和方法接触，半导体元件
公开(公告)号：WO03043074A2
公开(公告)日：2003-05-22
申请号：PCT/EP0212660
申请日：2002-11-12
申请人： EUROPAEISCHE GES FUER LEISTUNG , BAYERER REINHOLD
发明人： BAYERER REINHOLD
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/607 , H01L23/485 , H01L23/48
CPC分类号： H01L24/85 , H01L24/06 , H01L24/48 , H01L2224/04042 , H01L2224/05553 , H01L2224/05624 , H01L2224/4847 , H01L2224/85205 , H01L2224/85206 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01039 , H01L2924/1305 , H01L2924/13055 , H01L2224/45099 , H01L2924/00
摘要： The semiconductor component has several regularly arranged active cells (1), each comprising at least one main defining line (8). A bonding wire (18, 20) is fixed to at least one bonding surface (14, 16) by bonding with a bonding tool, oscillating in a main oscillation direction (22, 24), for external electrical contacting. The bonding surfaces (14, 16) are of such a size and oriented such that the main oscillation direction (22, 24) runs at an angle ( alpha ), with a difference of 90 ° to the main defining line (8).
摘要翻译：半导体器件具有具有多个规则地配置有源单元的（1）每一个都具有至少一个主边界线（8）。用于通过接合一个在主振动方向摆动的接合线（18，20）的外部电接触（22，24）接合工具是上连接有至少一个键合焊盘（14，16）。接合区域（14，16）的尺寸和定向，使得在90℃的角（阿尔法）的主振动方向（22，24）到主边界线（8）延伸。

2. 发明申请

WO2005027222A3 ASSEMBLY OF AN ELECTRICAL COMPONENT COMPRISING AN ELECTRICAL INSULATION FILM ON A SUBSTRATE AND METHOD FOR PRODUCING SAID ASSEMBLY 审中-公开
标题翻译：有电绝缘膜上的基板和方法电气元件的用于生产安排安排
公开(公告)号：WO2005027222A3
公开(公告)日：2005-12-15
申请号：PCT/EP2004051979
申请日：2004-09-01
申请人： SIEMENS AG , EUPEC GMBH , AUERBACH FRANZ , BAYERER REINHOLD , LICHT THOMAS , WEIDNER KARL
发明人： AUERBACH FRANZ , BAYERER REINHOLD , LICHT THOMAS , WEIDNER KARL
IPC分类号： H01L21/60 , H01L23/31 , H01L23/373 , H01L23/498 , H01L23/538 , H01L25/07
CPC分类号： H01L23/3737 , H01L23/3735 , H01L24/24 , H01L24/82 , H01L2224/24051 , H01L2224/24226 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/3025 , Y10T428/24355 , Y10T428/24777 , Y10T442/10 , H01L2924/00
摘要： The invention relates to the assembly of an electrical component (3) on a substrate (2). At least one electrical insulation film (5) is provided to electrically insulate the component and at least one section (52) of the insulation film is connected to the component and the substrate, in such a way that the surface contours (51) of said section of the insulation film are moulded to the surface contours (11) formed by the component and the substrate. The assembly is characterised in that the insulation film (5) has a dielectric strength in relation to an electric field strength of more than 10 kV/mm and preferably more than 50 kV/mm. To produce the assembly, the insulation film is laminated onto the substrate, preferably by means of a vacuum. This ensures that the insulation film and the component are in extremely close contact. The component is in particular a power semiconductor component. The insulation film ensures that no electrical arcing takes place, despite the high electrical voltages used during the operation of components of this type, even on exposed parts of the component, i.e. corners or edges, in which field overshoots can occur.
摘要翻译：本发明涉及一种电气部件（3）的组件的基板（2），其中，至少一个电绝缘膜（5）与组分所规定的部件的电绝缘性和至少一个部分（52）的绝缘膜的与基板连接，使得上是一个由部件，并在绝缘膜的部分的表面轮廓（51）在基板的表面轮廓（11）给定的被示出。该装置的特征在于，具有大于10千伏/毫米的电场强度，并且优选大于50千伏/毫米的电压电阻的绝缘膜（5）。用于制造结构中，绝缘膜被层压。这优选在真空下进行。因此，绝缘膜和所述部件之间的特别紧密的接触得以实现。该组件是特别是功率半导体器件。通过绝缘膜保证了尽管在这样的设备高的电的电压，即使在装置的暴露的位置，即在角部或边缘可能引起过度的场增加的操作所使用的，就没有电弧。

3. 发明申请

WO2006087065A3 POWER SEMICONDUCTOR ASSEMBLY 审中-公开
标题翻译：功率半导体组装
公开(公告)号：WO2006087065A3
公开(公告)日：2008-02-21
申请号：PCT/EP2006000457
申请日：2006-01-19
申请人： INFINEON TECHNOLOGIES AG , BAYERER REINHOLD , THOBEN MARKUS
发明人： BAYERER REINHOLD , THOBEN MARKUS
IPC分类号： H01L25/07
CPC分类号： H01L24/73 , H01L24/24 , H01L24/36 , H01L24/40 , H01L24/48 , H01L24/49 , H01L24/82 , H01L25/072 , H01L2224/2402 , H01L2224/24051 , H01L2224/24226 , H01L2224/40137 , H01L2224/48091 , H01L2224/48472 , H01L2224/49111 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2224/37099
摘要： The invention relates to a power semiconductor assembly comprising a support (50), a first semiconductor chip (10) and a second semiconductor chip (20). The first semiconductor chip (10) has a first main connection (11) and a second main connection (12) that are disposed on opposite sides of the first semiconductor chip (10). The second semiconductor chip (20) has a first main connection (21) and a second main connection (22) that are disposed on opposite sides of the second semiconductor chip (20). The first side (51) of the carrier (50) is provided with a metallized structure (60) that has a first section (61) and a spaced-apart second section (62). The first semiconductor chip (10) is disposed on the first side (51) of the carrier (50) and is mechanically and electrically connected to the first section (61) via its second main connection (12). The second semiconductor chip (20) is disposed on the first side (51) of the carrier (50) and is mechanically and electrically connected to the second section (62) via its second main connection (22). The first connection (11) of the semiconductor chip (10) and the first main connection (21) of the second semiconductor chip (20) are electrically connected to each other and to a first connection contact (71) provided for connecting an external load (100) or an external supply voltage.
摘要翻译：本发明涉及与载体（50），第一半导体芯片（10）和第二半导体芯片（20）的功率半导体器件。这里，第一主端子（11）和第二主端子（12），其被布置在第一半导体芯片（10）的相对侧上的第一半导体芯片（10）。第二半导体芯片（20）具有一个第一主端子（21）和第二主端子（22），其被布置在第二半导体芯片（20）的相对两侧。该载体（50）的第一侧（51）上设置有结构化的金属化（60）具有第一部分（61）和由其（62）间隔开的第二部分。在第一半导体芯片（10）被布置在所述载体（50）的第一侧（51），并通过它的第二主端子（12）机械地和导电地连接到所述第一部分（61）的装置。第二半导体芯片（20）被布置在所述载体（50）的第一侧（51）和通过它的第二主端子（22）机械地和导电地连接到所述第二部分（62）的装置。在第一半导体芯片（10）和第二半导体芯片（20）的第一主端子（21）的第一主端子（11）被提供给彼此和一个外部负载（100）或外部电源第一端子触点（71）的连接导电互联。

4. 发明申请

WO0188983A3 POWER SEMICONDUCTOR MODULE 审中-公开
标题翻译：半导体功率模块
公开(公告)号：WO0188983A3
公开(公告)日：2002-04-04
申请号：PCT/DE0101870
申请日：2001-05-17
申请人： EUPEC GMBH & CO KG , SIEMENS AG , BAYERER REINHOLD , DILLIG REINHOLD , KISTNER MICHAEL , LODDENKOETTER MANFRED , RAITH SEBASTIAN
发明人： BAYERER REINHOLD , DILLIG REINHOLD , KISTNER MICHAEL , LODDENKOETTER MANFRED , RAITH SEBASTIAN
IPC分类号： H01L23/34 , H01L25/16
CPC分类号： H01L25/162 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a power semiconductor module comprising a power component (1) and a sensor component (1), wherein the sensor component (2) is electrically and/or mechanically insulated from the power component (1) disposed on a substrate (7) by means of an individual, additional substrate (7).
摘要翻译：本发明涉及一种具有功率元件（1）和传感器构件（2），其中所述传感器部件（2）由一个附加的，单独的衬底（7）提供了由一个衬底（3）功率组件上的功率半导体模块，（1）是电和/ 或机械地隔离。

5. 发明申请

WO2005106954A2 POWER SEMICONDUCTOR CIRCUIT AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR CIRCUIT 审中-公开
标题翻译：电力半导体电路及其制造方法的电力半导体电路
公开(公告)号：WO2005106954A2
公开(公告)日：2005-11-10
申请号：PCT/EP2005002708
申请日：2005-03-14
申请人： EUPEC GMBH & CO KG , BAYERER REINHOLD
发明人： BAYERER REINHOLD
IPC分类号： H01L23/367 , H01L23/373 , H01L25/07
CPC分类号： H01L24/49 , H01L23/3735 , H01L24/45 , H01L24/48 , H01L25/072 , H01L2224/05554 , H01L2224/45147 , H01L2224/45169 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/49 , H01L2924/01005 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/014 , H01L2924/10161 , H01L2924/13055 , H01L2924/15787 , H01L2924/19041 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： The power semiconductor circuit comprises a power semiconductor module (2) provided in the form of a flat module. In order to utilize the design possibilities resulting therefrom and to provide a power semiconductor circuit that is characterized by having an automatable production and a particularly space-saving design. To this end, the flat module, with its substrate (11), is glued by means of a heat conducting adhesive (20) directly onto a heat conducting base plate (1) that acts as a cooling element (5).
摘要翻译：所述功率半导体电路包括Leistungschalbleitermodul（2），其被设计为平坦的组件。为了使用所得到的伊甸从而设计方案，并提供一种电力半导体电路，其特点是一个自动化的生产和特别节省空间的设计，它提供的是，平坦组件与其底物（11）由导热性粘接剂（20）直接连接到一个装置（作为冷却元件 5）作用wärmleitende底板（1）被胶合。

6. 发明申请

WO0223632B1 CONTACT DEVICE AND CIRCUIT 审中-公开
标题翻译：接触装置和电路安排
公开(公告)号：WO0223632B1
公开(公告)日：2002-09-06
申请号：PCT/DE0103239
申请日：2001-08-23
申请人： EUPEC GMBH & CO KG , BAYERER REINHOLD , VETTER ANDREAS , FERBER GOTTFRIED
发明人： BAYERER REINHOLD , VETTER ANDREAS , FERBER GOTTFRIED
IPC分类号： H01L23/498
CPC分类号： H01L23/49861 , H01L24/48 , H01L2224/05599 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/48464 , H01L2224/85399 , H01L2924/00014 , H01L2924/01068 , H01L2224/45015 , H01L2924/207
摘要： In order to increase the electric power transmitted by a contact device (10), a connection area (14) is provided on at least one contact area (11,12) of said contact device (10). The connection area is embodied in such a way that it establishes a thermal link with the cooling area (28) of a circuit (20) in order to convey heat from the contact device (10) to the cooling device (28) and consequently dissipate the heat of the contact device (10).
摘要翻译：为了增加通过电力的接触装置（10）发送的功率，所以建议使接触装置（10）中的至少一个接触区域（11，12），连接部分（14）被提供，其被设计，以一个的热连接电路装置（20）的冷却区域（28）形成为了实现从接触装置（10）到冷却装置（28）的热传递并因此实现接触装置（10）的冷却。

7. 发明申请

WO2006056555A3 POWER CONVERTER ARRANGEMENT 审中-公开
标题翻译：电力转换装置
公开(公告)号：WO2006056555A3
公开(公告)日：2006-07-27
申请号：PCT/EP2005056078
申请日：2005-11-18
申请人： SIEMENS AG , INFINEON TECHNOLOGIES AG , BAUDELOT ERIC , BAYERER REINHOLD , KENNEY RICHARD , LEIBOLD HERBERT , THOMPSON KENNETH
发明人： BAUDELOT ERIC , BAYERER REINHOLD , KENNEY RICHARD , LEIBOLD HERBERT , THOMPSON KENNETH
IPC分类号： H01L25/07
CPC分类号： H01L25/074 , H01L24/24 , H01L24/72 , H01L2224/32225 , H01L2224/73267
摘要： The invention relates to a power converter arrangement (1) comprising at least one power converter (2) and at least one power converter housing (3), the power converter having a power component (21) with at least one power semiconductor element (22) and the power converter housing having an interior space (31) inside of which the power semiconductor element of the power component of the power converter is placed. At least one additional power component (81) of the power converter is placed in the interior space of the power converter housing, and an electric contact surface of the power semiconductor element and the additional power component of the power converter are electrically insulated from one another with the aid of an electrical insulation film (7) placed on said power semiconductor element. The power component is, for example, a power circuit breaker. The power circuit breaker is placed inside the power converter housing in an unhoused manner. An encapsulation of the power circuit breaker with silicone is unnecessary. This results in a simple and compact design.
摘要翻译：本发明涉及一种功率转换器装置（1）具有至少一个功率转换器（2）和至少一个功率转换器壳体（3），其中，所述转换器包括具有至少一个功率半导体部件（22）上的功率组件（21），所述转换器壳体具有内部空间（31），在其中，所述转换器的功率分量的功率半导体部件设置，所述功率转换器中的至少一个其它动力部件（81）由布置在所述功率半导体部件的电绝缘膜的装置，被布置在所述转换器壳体和所述功率半导体部件的电接触表面和所述转换器的其它电源部件的内部（7），其电彼此隔离。性能部件，例如断路器。电源开关被置于不带外壳中的转换器壳体中。用硅酮的断路器的铸造是没有必要的。其结果是一个简单而紧凑的结构。

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