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1. 发明公开

KR20120082464A Method for sr-ti-o-base film formation and recording medium 无效
标题翻译：用于SR-TI-O基膜形成和记录介质的方法
公开(公告)号：KR20120082464A
公开(公告)日：2012-07-23
申请号：KR20127014233
申请日：2009-02-18
申请人： ELPIDA MEMORY INC , TOKYO ELECTRON LTD
发明人： KAWANO YUMIKO , ARIMA SUSUMU , KAKIMOTO AKINOBU , HIROTA TOSHIYUKI , KIYOMURA TAKAKAZU
IPC分类号： H01L21/316
CPC分类号： H01L21/31691 , C23C16/40 , C23C16/409 , C23C16/45527 , C23C16/45531 , C23C16/56 , H01G4/1227 , H01G4/33 , H01L28/40
摘要： Sr-Ti-O계 막의 성막 방법은 처리용기내에 Ru막이 형성된 기판을 배치하고, 기체상의 Ti 원료와, 기체상의 Sr 원료와, 기체상의 산화제를 상기 처리용기내에 도입해서 Ru막 상에 두께 10㎚ 이하의 제 1 Sr-Ti-O계 막을 성막하는 것과, 제 1 Sr-Ti-O계 막을 어닐해서 결정화시키는 것과, 제 1 Sr-Ti-O계 막의 위에, 기체상의 Ti 원료와, 기체상의 Sr 원료와, 기체상의 산화제를 처리용기내에 도입하고 그 위에 제 2 Sr-Ti-O계 막을 성막하는 것과, 제 2 Sr-Ti-O계 막을 어닐해서 결정화시키는 것을 포함한다.
摘要翻译：通过在Ru膜厚度在处理容器引入锶原料，并在Ti原料基座上的氧化剂，并且形成Ru膜设置在基板上的气体和气体中处理容器锶钛-O系膜沉积方法10㎚作为成膜的基于胶片的根据权利要求1通过退火结晶作为膜锶钛-O或以下，则1锶钛-O系统中，权利要求1的锶钛-O系过膜，钛材料和，SR气相的气相的它包括凝固的原料和引入气态氧化剂到处理容器中，并如权利要求2锶钛-O在其上的薄膜淀积系统中，薄膜是在退火的2型锶钛-O确定。

2. 发明申请

WO2005033357A3 LOW-PRESSURE DEPOSITION OF METAL LAYERS FROM METAL-CARBONYL PRECURSORS 审中-公开
标题翻译：来自金属碳前驱体的金属层的低压沉积
公开(公告)号：WO2005033357A3
公开(公告)日：2005-06-23
申请号：PCT/US2004028894
申请日：2004-09-07
申请人： TOKYO ELECTRON LTD , IBM , YAMASAKI HIDEAKI , MATSUDA TSUKASA , GOMI ATSUSHI , HATANO TATSUO , SUGIURA MASAHITO , KAWANO YUMIKO , LEUSINK GERT J , MCFEELY FENTON R , MALHOTRA SANDRA G
发明人： YAMASAKI HIDEAKI , MATSUDA TSUKASA , GOMI ATSUSHI , HATANO TATSUO , SUGIURA MASAHITO , KAWANO YUMIKO , LEUSINK GERT J , MCFEELY FENTON R , MALHOTRA SANDRA G
IPC分类号： C23C16/16 , C23C16/44 , H01L21/285 , C23C16/455
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500 C, by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

3. 发明公开

KR20100082725A Method for forming ge-sb-te based film and storage medium 无效
标题翻译：用于形成基于GE-SB-TE的薄膜和储存介质的方法
公开(公告)号：KR20100082725A
公开(公告)日：2010-07-19
申请号：KR20100001216
申请日：2010-01-07
申请人： TOKYO ELECTRON LTD
发明人： KAWANO YUMIKO , ARIMA SUSUMU
IPC分类号： G11B7/26 , G11B7/24
CPC分类号： G11B7/266 , C23C16/455 , G11B7/2433 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： PURPOSE: A method of forming a Ge-Sb-Te based film and a storage medium are provided to acquire a desired amount of Te while reducing the mixing impediment by a Te source by forming a Te containing material in the passage and/or the reaction space of gas prior to forming a film when forming a Ge-Sb-Te based film using CVD. CONSTITUTION: A method of forming a Ge-Sb-Te based film is as follows. In the state a substrate is outside a container, a Te containing material is previously formed in the passage of and/or the reaction space of gas(process 1). A gate valve is opened and the substrate is put into the container from a gate(process 2). Ge source gas, Sb source gas and Te source gas are flowed by a given amount and the Ge-Sb-Te based film is formed on the substrate(process 3). The supply of the source stops and the container is purged by diluted gas and then the gate valve opens and the film-formed substrate is carried out from the container(process 4).
摘要翻译：目的：提供形成Ge-Sb-Te基膜和存储介质的方法以通过在通道和/或反应中形成含Te材料来减少Te源的混合阻碍，获得所需量的Te 在使用CVD形成Ge-Sb-Te基膜时，在形成膜之前的气体空间。构成：形成Ge-Sb-Te类膜的方法如下。在基板在容器外部的状态下，在气体的通过和/或反应空间中预先形成含Te的材料（工序1）。打开闸阀，将基板从闸门放入容器（方法2）。 Ge源气体，Sb源气体和Te源气体流过规定量，在基板上形成Ge-Sb-Te系膜（工序3）。源的供应停止，容器被稀释的气体吹扫，然后打开阀门，并从容器中进行成膜的基材（方法4）。

4. 发明申请

WO2006036865A2 DEPOSITION OF RUTHENIUM METAL LAYERS IN A THERMAL CHEMICAL VAPOR DEPOSITION PROCESS 审中-公开
标题翻译：在化学气相沉积过程中钌金属层的沉积
公开(公告)号：WO2006036865A2
公开(公告)日：2006-04-06
申请号：PCT/US2005034348
申请日：2005-09-27
申请人： TOKYO ELECTRON LTD , YAMASAKI HIDEAKI , KAWANO YUMIKO , LEUSINK GERT J
发明人： YAMASAKI HIDEAKI , KAWANO YUMIKO , LEUSINK GERT J
IPC分类号： C23C16/16 , H01L21/285
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76873
摘要： A method for depositing a Ru metal layer on a substrate is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas, a ruthenium-carbonyl precursor, and hydrogen. The method further includes depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process. In one embodiment of the invention, the ruthenium-carbonyl precursor can contain Ru3(CO)12. and the Ru metal layer can be deposited at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.
摘要翻译：介绍了一种用于在衬底上沉积Ru金属层的方法。该方法包括在处理室中提供衬底，在处理室中引入处理气体，处理气体包括载气，钌 - 羰基前体和氢气。该方法还包括通过热化学气相沉积工艺在衬底上沉积Ru金属层。在本发明的一个实施方案中，钌 - 羰基前体可以含有Ru 3（CO）12。并且可以在衬底温度下沉积Ru金属层，导致Ru金属层主要具有Ru（002）晶体取向。

5. 发明申请

WO02075011A2 THIN FILM FORMING METHOD AND THIN FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：WO02075011A2
公开(公告)日：2002-09-26
申请号：PCT/JP0202425
申请日：2002-03-14
申请人： TOKYO ELECTRON LTD , YAMASAKI HIDEAKI , ARIMA SUSUMU , KAWANO YUMIKO
发明人： YAMASAKI HIDEAKI , ARIMA SUSUMU , KAWANO YUMIKO
IPC分类号： C23C16/02 , C23C16/18 , C23C16/44 , C23C16/452 , C23C16/455 , H01L21/02 , H01L21/28 , H01L21/285 , H01L21/3105 , H01L21/316 , H01L21/8242 , H01L27/108 , C23C
CPC分类号： C23C16/45523 , C23C16/0218 , C23C16/0236 , C23C16/18 , C23C16/452 , H01L21/3105 , H01L21/31612 , H01L28/55 , H01L28/60 , H01L28/65 , H01L28/90
摘要： A semiconductor substrate 101 is placed in a predetermined processing vessel, and oxygen gas activated by, e.g., conversion into a plasma is supplied onto an insulating film 108. The surfaces of an interlevel insulating film 106 and insulating film 108 are exposed to the activated oxygen gas. After that, a ruthenium film 109 is formed by CVD.
摘要翻译：将半导体衬底101放置在预定的处理容器中，并且通过例如转换成等离子体的氧气被供应到绝缘膜108上。层间绝缘膜106和绝缘膜108的表面暴露于活性氧加油站。之后，通过CVD形成钌膜109。

6. 发明专利

AU2003257620A1 SUBSTRATE TREATING APPARATUS 未知
公开(公告)号：AU2003257620A1
公开(公告)日：2004-03-19
申请号：AU2003257620
申请日：2003-08-20
申请人： TOKYO ELECTRON LTD
发明人： KOJIMA YASUHIKO , ISHIZAKA TADAHIRO , KAWANO YUMIKO
IPC分类号： F25D9/00 , C23C16/44 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/285 , F25D7/00 , H01L21/31

7. 发明专利

AU2003281011A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 未知
公开(公告)号：AU2003281011A1
公开(公告)日：2004-02-02
申请号：AU2003281011
申请日：2003-07-10
申请人： TOKYO ELECTRON LTD
发明人： YAMASAKI HIDEAKI , ARIMA SUSUMU , KAWANO YUMIKO
IPC分类号： H01L21/3205 , C23C16/02 , C23C16/56 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L23/52 , H01L27/105 , H01L27/108 , H01L27/10

8. 发明专利

AU1428302A Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring 未知
公开(公告)号：AU1428302A
公开(公告)日：2002-05-27
申请号：AU1428302
申请日：2001-11-13
申请人： TOKYO ELECTRON LTD
发明人： YAMASAKI HIDEAKI , TACHIBANA MITSUHIRO , OKUBO KAZUYA , SUZUKI KENJI , KAWANO YUMIKO
IPC分类号： C23C16/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52
摘要： A metal film forming method, includes the steps of (a) (s 13 , s 15 ) supplying a plural kinds of ingredient gases to a base barrier film ( 3 ) in sequence, wherein at least one of the gases includes a metal, and (b) (s 14 , s 16 ) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film ( 5 ) of the metal is formed on the base barrier film ( 3 ).

9. 发明专利

AU2003289404A1 METHOD FOR FORMING FILM 未知
公开(公告)号：AU2003289404A1
公开(公告)日：2004-07-09
申请号：AU2003289404
申请日：2003-12-17
申请人： TOKYO ELECTRON LTD
发明人： HATANO TATSUO , KAWANO YUMIKO , YAMASAKI HIDEAKI
IPC分类号： C23C16/18 , C23C16/02 , C23C16/16 , C23C16/455 , H01L21/28 , H01L21/285
摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.

10. 发明专利

AU2263902A Processing method and processing apparatus 未知
公开(公告)号：AU2263902A
公开(公告)日：2002-06-24
申请号：AU2263902
申请日：2001-12-14
申请人： TOKYO ELECTRON LTD
发明人： KOJIMA YASUHIKO , ARIMA SUSUMU , YAMASAKI HIDEAKI , KAWANO YUMIKO
IPC分类号： C23C14/50 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/68 , H01L21/683 , H01L21/687
摘要： After a thin film is deposited on a treatment surface of a wafer and the wafer is transferred out of a treatment chamber, a contact projection of a clamp is brought into contact with a susceptor to heat the clamp. Next, a wafer is disposed on the susceptor by elevating the clamp when the wafer, on which a thin film is not deposited, is transferred in. Thereafter, the clamp is brought into contact with the wafer and the wafer is stabilized to a predetermined temperature. Thereafter, a thin film is deposited on a treatment surface of the wafer.

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