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1. 发明申请

WO02075868A3 VERTICAL CAVITY SURFACE EMITTING LASER 审中-公开
标题翻译：垂直孔表面发射激光
公开(公告)号：WO02075868A3
公开(公告)日：2002-12-12
申请号：PCT/IB0200683
申请日：2002-03-08
申请人： ECOLE POLYTECH , KAPON ELYAHOU , IAKOVLEV VLADIMIR , SIRBU ALEXEI , RUDRA ALOK
发明人： KAPON ELYAHOU , IAKOVLEV VLADIMIR , SIRBU ALEXEI , RUDRA ALOK
IPC分类号： H01S5/187 , H01S5/00 , H01S5/04 , H01S5/10 , H01S5/14 , H01S5/183
CPC分类号： H01S5/18366 , B82Y20/00 , H01S5/041 , H01S5/0614 , H01S5/18308 , H01S5/18358 , H01S5/1838 , H01S5/34306
摘要： An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. The device defines an aperture region (25) between the structured surface (14b) of the active cavity material (14) and the n-semiconductor layer of the top DBR stack (12b). The structured surface (14b) is formed by a top surface of a mesa (22) that includes at least the upper n layer of a p /n tunnel junction and the surface of a p-type layer outside the mesa (22). The structured surface (14b) is fused to the surface of the n-semiconductor layer of the DBR stack (12b) due to the deformation of these surfaces, thereby creating an air gap (24) in the vicinity of the mesa (22) between the fused surfaces. The active region is defined by the current aperture (25) which includes the mesa (22) surrounded by the air gap (24), thereby allowing for restricting an electrical current flow to the active region, while the air gap (24) provides for the lateral variation of the index of refraction in the VCSEL (10).
摘要翻译：提出一种电泵浦VCSEL（10）及其制造方法。 VCSEL（10）包括夹在顶部和底部DBR堆叠（12a，12b）之间的有源腔体材料（14），顶部DBR（12b）具有至少一个n半导体层。器件在有源腔材料（14）的结构化表面（14b）和顶部DBR叠层（12b）的n半导体层之间限定开口区域（25）。结构化表面（14b）由台面（22）的顶表面形成，所述台面（22）的顶表面至少包括顶部p ++层/ n ++层隧道结和p 型层（22）外。结构化表面（14b）由于这些表面的变形而与DBR堆叠（12b）的n半导体层的表面熔合，从而在台面（22）附近在融合表面。有源区域由包括由空气间隙（24）包围的台面（22）的电流孔（25）限定，从而允许限制电流流向有源区，同时气隙（24）提供 VCSEL（10）中折射率的横向变化。

2. 发明专利

DE60204007D1 未知
公开(公告)号：DE60204007D1
公开(公告)日：2005-06-09
申请号：DE60204007
申请日：2002-03-08
申请人： ECOLE POLYTECH
发明人： KAPON ELYAHOU , IAKOVLEV VLADIMIR , SIRBU ALEXEI , RUDRA ALOK
IPC分类号： H01S5/187 , H01S5/00 , H01S5/04 , H01S5/10 , H01S5/14 , H01S5/183
摘要： An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. The device defines an aperture region (25) between the structured surface (14b) of the active cavity material (14) and the n-semiconductor layer of the top DBR stack (12b). The structured surface (14b) is formed by a top surface of a mesa (22) that includes at least the upper n layer of a p /n tunnel junction and the surface of a p-type layer outside the mesa (22). The structured surface (14b) is fused to the surface of the n-semiconductor layer of the DBR stack (12b) due to the deformation of these surfaces, thereby creating an air gap (24) in the vicinity of the mesa (22) between the fused surfaces. The active region is defined by the current aperture (25) which includes the mesa (22) surrounded by the air gap (24), thereby allowing for restricting an electrical current flow to the active region, while the air gap (24) provides for the lateral variation of the index of refraction in the VCSEL (10).

3. 发明专利

AU2002234838A1 Vertical cavity surface emitting laser 未知
公开(公告)号：AU2002234838A1
公开(公告)日：2002-10-03
申请号：AU2002234838
申请日：2002-03-08
申请人： ECOLE POLYTECH
发明人： SIRBU ALEXEI , IAKOVLEV VLADIMIR , KAPON ELYAHOU , RUDRA ALOK
IPC分类号： H01S5/187 , H01S5/00 , H01S5/04 , H01S5/10 , H01S5/14 , H01S5/183
摘要： An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. The device defines an aperture region (25) between the structured surface (14b) of the active cavity material (14) and the n-semiconductor layer of the top DBR stack (12b). The structured surface (14b) is formed by a top surface of a mesa (22) that includes at least the upper n layer of a p /n tunnel junction and the surface of a p-type layer outside the mesa (22). The structured surface (14b) is fused to the surface of the n-semiconductor layer of the DBR stack (12b) due to the deformation of these surfaces, thereby creating an air gap (24) in the vicinity of the mesa (22) between the fused surfaces. The active region is defined by the current aperture (25) which includes the mesa (22) surrounded by the air gap (24), thereby allowing for restricting an electrical current flow to the active region, while the air gap (24) provides for the lateral variation of the index of refraction in the VCSEL (10).

4. 发明专利

DE60204007T2 未知
公开(公告)号：DE60204007T2
公开(公告)日：2006-03-16
申请号：DE60204007
申请日：2002-03-08
申请人： ECOLE POLYTECH
发明人： KAPON ELYAHOU , IAKOVLEV VLADIMIR , SIRBU ALEXEI , RUDRA ALOK
IPC分类号： H01S5/183 , H01S5/187 , H01S5/00 , H01S5/04 , H01S5/10 , H01S5/14
摘要： An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. The device defines an aperture region (25) between the structured surface (14b) of the active cavity material (14) and the n-semiconductor layer of the top DBR stack (12b). The structured surface (14b) is formed by a top surface of a mesa (22) that includes at least the upper n layer of a p /n tunnel junction and the surface of a p-type layer outside the mesa (22). The structured surface (14b) is fused to the surface of the n-semiconductor layer of the DBR stack (12b) due to the deformation of these surfaces, thereby creating an air gap (24) in the vicinity of the mesa (22) between the fused surfaces. The active region is defined by the current aperture (25) which includes the mesa (22) surrounded by the air gap (24), thereby allowing for restricting an electrical current flow to the active region, while the air gap (24) provides for the lateral variation of the index of refraction in the VCSEL (10).

5. 发明专利

ES2241988T3 LASER DE CAVIDAD VERTICAL Y DE EMISION POR SUPERFICIE. 未知
公开(公告)号：ES2241988T3
公开(公告)日：2005-11-01
申请号：ES02701506
申请日：2002-03-08
申请人： ECOLE POLYTECH
发明人： KAPON ELYAHOU , IAKOVLEV VLADIMIR , SIRBU ALEXEI , RUDRA ALOK
IPC分类号： H01S5/187 , H01S5/00 , H01S5/04 , H01S5/10 , H01S5/14 , H01S5/183
摘要： Una estructura de dispositivo láser de cavidad vertical y emisión en superficie (VCSEL) (10) que comprende una estructura de material semiconductor de cavidad activa (14) intercalada entre pilas de reflectores de Bragg distribuidos (DBR) superior e inferior (12a, 12b), incluyendo el DBR superior (12b) al menos una capa de semiconductor de tipo n, y que define una región activa para generar luz en respuesta a la aplicación de un voltaje continuo a contactos del dispositivo (15) en la que: dicho material de la cavidad activa comprende una pila de capas de pozos cuánticos múltiples (18) intercalada entre regiones separadoras inferior y superior (16a y 16b), terminando la región separadora superior (16b) con una capa p (20) y una unión de túnel p++/n++ sobre la parte superior de dicha capa p, presentando cada una de las capas p++ y p una capa de tipo p, siendo al menos la capa n++ superior de la unión de túnel una mesa (22) que emerge de la capa de tipo p subyacente, estando formada una superficie estructurada (14b) del material de la cavidad activa (14) por una superficie superior de la mesa (22) y una superficie superior de la capa de tipo p por fuera de la mesa (22). dicha región activa está definida por una abertura de corriente (25) que incluye la mesa (22) rodeada por una separación de aire (24) entre la superficie estructurada fusionada del material de la cavidad activa (14) y la superficie de la capa de semiconductor de tipo n de la pila de DBR superior (12b).

6. 发明专利

AT295011T 未知
公开(公告)号：AT295011T
公开(公告)日：2005-05-15
申请号：AT02701506
申请日：2002-03-08
申请人： ECOLE POLYTECH
发明人： KAPON ELYAHOU , IAKOVLEV VLADIMIR , SIRBU ALEXEI , RUDRA ALOK
IPC分类号： H01S5/187 , H01S5/00 , H01S5/04 , H01S5/10 , H01S5/14 , H01S5/183
摘要： An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. The device defines an aperture region (25) between the structured surface (14b) of the active cavity material (14) and the n-semiconductor layer of the top DBR stack (12b). The structured surface (14b) is formed by a top surface of a mesa (22) that includes at least the upper n layer of a p /n tunnel junction and the surface of a p-type layer outside the mesa (22). The structured surface (14b) is fused to the surface of the n-semiconductor layer of the DBR stack (12b) due to the deformation of these surfaces, thereby creating an air gap (24) in the vicinity of the mesa (22) between the fused surfaces. The active region is defined by the current aperture (25) which includes the mesa (22) surrounded by the air gap (24), thereby allowing for restricting an electrical current flow to the active region, while the air gap (24) provides for the lateral variation of the index of refraction in the VCSEL (10).

7. 发明专利

HK1069020A1 Vertical cavity surface emitting laser 未知
公开(公告)号：HK1069020A1
公开(公告)日：2005-05-06
申请号：HK05101475
申请日：2005-02-22
申请人： ECOLE POLYTECH
发明人： KAPON ELYAHOU , IAKOVLEV VLADIMIR , SIRBU ALEXEI , RUDRA ALOK
IPC分类号： H01S20060101 , H01S5/187 , H01S5/00 , H01S5/04 , H01S5/10 , H01S5/14 , H01S5/183
摘要： An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. The device defines an aperture region (25) between the structured surface (14b) of the active cavity material (14) and the n-semiconductor layer of the top DBR stack (12b). The structured surface (14b) is formed by a top surface of a mesa (22) that includes at least the upper n layer of a p /n tunnel junction and the surface of a p-type layer outside the mesa (22). The structured surface (14b) is fused to the surface of the n-semiconductor layer of the DBR stack (12b) due to the deformation of these surfaces, thereby creating an air gap (24) in the vicinity of the mesa (22) between the fused surfaces. The active region is defined by the current aperture (25) which includes the mesa (22) surrounded by the air gap (24), thereby allowing for restricting an electrical current flow to the active region, while the air gap (24) provides for the lateral variation of the index of refraction in the VCSEL (10).

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