专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2002075263A1 A MICRO-ELECTROMECHANICALLY TUNABLE VERTICAL CAVITY PHOTONIC DEVICE AND A METHOD OF FABRICATION THEREOF 审中-公开
标题翻译：微机电可控垂直孔光电装置及其制造方法
公开(公告)号：WO2002075263A1
公开(公告)日：2002-09-26
申请号：PCT/IB2002/000682
申请日：2002-03-08
申请人： ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE , KAPON, Elyahou , IAKOVLEV, Vladimir , SIRBU, Alexei , RUDRA, Alok , SURUCEANU, Grigore
发明人： KAPON, Elyahou , IAKOVLEV, Vladimir , SIRBU, Alexei , RUDRA, Alok , SURUCEANU, Grigore
IPC分类号： G01J3/26
CPC分类号： H01S5/18366 , B82Y20/00 , H01S5/041 , H01S5/0614 , H01S5/18308 , H01S5/18358 , H01S5/1838 , H01S5/34306
摘要： A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a spacer above the bottom DBR stack. The top DBR stack is carried by a supporting structure in a region thereof located above a central region of the recess, while a region of the supporting structure above the recess and outside the DBR stack presents a membrane deflectable by the application of a tuning voltage to the device contacts.
摘要翻译：提出了一种可调谐的法布里 - 珀罗垂直腔光子器件及其制造方法。该器件包括顶部和底部半导体DBR堆叠以及它们之间的可调节气隙腔。气隙腔形成在底部DBR叠层上方的间隔物的凹部内。顶部DBR堆叠由位于凹部的中心区域上方的区域中的支撑结构承载，而在凹槽之上和DBR堆叠之外的支撑结构的区域呈现通过施加调谐电压可偏转的膜设备联系人。

2. 发明申请

WO2011000568A1 VERTICAL CAVITY SURFACE EMITTING DEVICES INCORPORATING WAFER FUSED REFLECTORS 审中-公开
标题翻译：埋入式反射镜的垂直孔表面发射装置
公开(公告)号：WO2011000568A1
公开(公告)日：2011-01-06
申请号：PCT/EP2010/003980
申请日：2010-07-01
申请人： ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE , SIRBU, Alexei , MEREUTA, Alexandru , CALIMAN, Andrei
发明人： SIRBU, Alexei , MEREUTA, Alexandru , CALIMAN, Andrei
IPC分类号： H01S5/183 , H01S5/02
CPC分类号： H01S5/18397 , B82Y20/00 , H01S5/0215 , H01S5/1838 , H01S5/34306
摘要： A method of forming an optoelectronic device comprising growing a first multi-layer 2 representing a reflector on a first substrate and a second multilayer 4 representing an active region on a second substrate, the first and second substrates being lattice mismatched, fusing the first multi-layer 2 to a third substrate 3, wherein the material of the third substrate 3 is lattice matched with respect to the material of the second multi-layer 4, removing the first substrate to expose the first multi-layer 2, and fusing the first multi-layer to the second multi-layer 4.
摘要翻译：一种形成光电子器件的方法，包括在第一衬底上生长表示反射器的第一多层2和表示第二衬底上的有源区的第二层4，第一和第二衬底晶格失配，层2到第三衬底3，其中第三衬底3的材料相对于第二多层4的材料晶格匹配，去除第一衬底以暴露第一多层2，并将第一多层层到第二层多层4。

3. 发明申请

WO02075868A3 VERTICAL CAVITY SURFACE EMITTING LASER 审中-公开
标题翻译：垂直孔表面发射激光
公开(公告)号：WO02075868A3
公开(公告)日：2002-12-12
申请号：PCT/IB0200683
申请日：2002-03-08
申请人： ECOLE POLYTECH , KAPON ELYAHOU , IAKOVLEV VLADIMIR , SIRBU ALEXEI , RUDRA ALOK
发明人： KAPON ELYAHOU , IAKOVLEV VLADIMIR , SIRBU ALEXEI , RUDRA ALOK
IPC分类号： H01S5/187 , H01S5/00 , H01S5/04 , H01S5/10 , H01S5/14 , H01S5/183
CPC分类号： H01S5/18366 , B82Y20/00 , H01S5/041 , H01S5/0614 , H01S5/18308 , H01S5/18358 , H01S5/1838 , H01S5/34306
摘要： An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. The device defines an aperture region (25) between the structured surface (14b) of the active cavity material (14) and the n-semiconductor layer of the top DBR stack (12b). The structured surface (14b) is formed by a top surface of a mesa (22) that includes at least the upper n layer of a p /n tunnel junction and the surface of a p-type layer outside the mesa (22). The structured surface (14b) is fused to the surface of the n-semiconductor layer of the DBR stack (12b) due to the deformation of these surfaces, thereby creating an air gap (24) in the vicinity of the mesa (22) between the fused surfaces. The active region is defined by the current aperture (25) which includes the mesa (22) surrounded by the air gap (24), thereby allowing for restricting an electrical current flow to the active region, while the air gap (24) provides for the lateral variation of the index of refraction in the VCSEL (10).
摘要翻译：提出一种电泵浦VCSEL（10）及其制造方法。 VCSEL（10）包括夹在顶部和底部DBR堆叠（12a，12b）之间的有源腔体材料（14），顶部DBR（12b）具有至少一个n半导体层。器件在有源腔材料（14）的结构化表面（14b）和顶部DBR叠层（12b）的n半导体层之间限定开口区域（25）。结构化表面（14b）由台面（22）的顶表面形成，所述台面（22）的顶表面至少包括顶部p ++层/ n ++层隧道结和p 型层（22）外。结构化表面（14b）由于这些表面的变形而与DBR堆叠（12b）的n半导体层的表面熔合，从而在台面（22）附近在融合表面。有源区域由包括由空气间隙（24）包围的台面（22）的电流孔（25）限定，从而允许限制电流流向有源区，同时气隙（24）提供 VCSEL（10）中折射率的横向变化。

4. 发明申请

WO2002075868A2 VERTICAL CAVITY SURFACE EMITTING LASER 审中-公开
标题翻译：垂直腔表面发射激光器
公开(公告)号：WO2002075868A2
公开(公告)日：2002-09-26
申请号：PCT/IB2002/000683
申请日：2002-03-08
申请人： ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE , KAPON, Elyahou , IAKOVLEV, Vladimir , SIRBU, Alexei , RUDRA, Alok
发明人： KAPON, Elyahou , IAKOVLEV, Vladimir , SIRBU, Alexei , RUDRA, Alok
IPC分类号： H01S3/00
CPC分类号： H01S5/18366 , B82Y20/00 , H01S5/041 , H01S5/0614 , H01S5/18308 , H01S5/18358 , H01S5/1838 , H01S5/34306
摘要： An electrically pumped VCSEL and a method of its fabrication are presented. He VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n ++ layer of a p ++ /n ++ tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces. The active region is defined by the current aperture which includes the mesa surrounded by the air gap, thereby allowing for restricting an electrical current flow to the active region, while the air gap provides for the lateral variation of the index of refraction in the VCSEL.
摘要翻译：介绍了一种电泵浦VCSEL及其制造方法。 He VCSEL包括夹在顶部和底部DBR叠层之间的有源腔体材料，顶部DBR具有至少一个n型半导体层。该器件在有源腔体材料的结构化表面和顶部DBR堆叠的n型半导体层之间限定开口区域。结构化表面由台面的顶部表面形成，台面的顶部表面至少包括ap ^{++ / n ^{++ 的上层n ++层 >隧道结和台面外的p型层的表面。由于这些表面的变形，结构化表面熔合到DBR叠层的n-半导体层的表面，从而在熔合表面之间的台面附近产生气隙。有源区由包括由气隙围绕的台面的电流孔限定，由此允许限制流到有源区的电流，而气隙提供VCSEL中的折射率的横向变化。}}

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式