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    • 4. 发明授权
    • Connecting part of outer circuit in liquid crystal display panel and a fabricating method thereof
    • 连接液晶显示面板外部电路的一部分及其制造方法
    • US06396558B1
    • 2002-05-28
    • US09644846
    • 2000-08-24
    • Byeong-Koo KimYong-Min Ha
    • Byeong-Koo KimYong-Min Ha
    • G02F11345
    • G02F1/13458G02F1/13452
    • A connecting part of an outer circuit in a liquid crystal display panel includes a substrate and a plurality of pads on the substrate, where the pads are to be connected to the outer circuit. A first connecting wire is connected to one of said pads, the wire being arranged in a first direction. A second connecting wire is connected to another one of said pads, the second connecting wire being arranged in a second direction. The first and second connecting wires are formed to minimize overlapped areas over the pads at crossing points between the first and second connecting wires and the pads. The first connecting wire is bent toward the second direction at a point and connected to the driving circuit.
    • 液晶显示面板中的外部电路的连接部分包括基板和衬底上的多个焊盘,其中焊盘将连接到外部电路。 第一连接线连接到所述焊盘中的一个,所述焊丝沿第一方向布置。 第二连接线连接到另一个所述焊盘,第二连接线沿第二方向布置。 第一和第二连接线被形成为使得在第一和第二连接线和焊盘之间的交叉点处的焊盘上的重叠区域最小化。 第一连接线在一点处朝向第二方向弯曲并连接到驱动电路。
    • 5. 发明授权
    • Driving circuit active matrix type organic light emitting diode device and method thereof
    • 驱动电路有源矩阵型有机发光二极管装置及其方法
    • US07545354B2
    • 2009-06-09
    • US11172479
    • 2005-06-30
    • Yong-Min HaJae-Ho Sim
    • Yong-Min HaJae-Ho Sim
    • G09G3/32
    • G09G3/3233G09G2300/0417G09G2300/043G09G2300/0819G09G2300/0842G09G2300/0861G09G2310/0262G09G2320/0242
    • Disclosed are a driving circuit and driving method for an organic light emitting diode (OLED) device. The driving circuit for the OLED device comprises RGB pixels each including: a gate line arranged in a first direction and a data line and a power supply line arranged in a second direction crossing the first direction; a plurality of switching transistors connected to the region where the gate line and the data line intersect; a capacitor connected to the switching transistors and the power supply line; a driving transistor connected to the capacitor and the power supply line; an OLED connected to the driving thin film transistor; a variable voltage signal connected to one of the plurality of switching transistors; and a driving signal connected to at least one of the switching transistors, wherein the variable voltage signal is independently connected to the RGB pixels, and the transistors are thin film transistors.
    • 公开了一种用于有机发光二极管(OLED)器件的驱动电路和驱动方法。 用于OLED器件的驱动电路包括RGB像素,每个像素包括:沿第一方向布置的栅极线和沿与第一方向交叉的第二方向布置的数据线和电源线; 连接到栅极线和数据线相交的区域的多个开关晶体管; 连接到开关晶体管和电源线的电容器; 连接到电容器和电源线的驱动晶体管; 连接到驱动薄膜晶体管的OLED; 连接到所述多个开关晶体管中的一个的可变电压信号; 以及连接到所述开关晶体管中的至少一个的驱动信号,其中所述可变电压信号独立地连接到所述RGB像素,并且所述晶体管是薄膜晶体管。
    • 8. 发明授权
    • Thin film transistor and method of fabricating thereof
    • 薄膜晶体管及其制造方法
    • US06429485B1
    • 2002-08-06
    • US09192050
    • 1998-11-13
    • Yong-Min HaJae-Deok Park
    • Yong-Min HaJae-Deok Park
    • H01L2701
    • H01L27/1237H01L27/1214H01L27/127H01L29/78621
    • A thin film transistor (TFT) has lightly doped drains which includes heavily doped regions and lightly doped regions. The lightly doped drains are formed simultaneously by a single doping process through a gate insulating layer having different thicknesses. The TFT is fabricated by forming an active layer on an insulated substrate, forming an insulating layer on the active layer, forming a conductive layer on the insulating layer, forming a photoresist pattern on the conductive layer, forming a gate electrode by over etching the conductive layer by using the photoresist pattern as a mask. The first insulating layer is then partially etched by using the photoresist pattern as a mask. As a result, the portions of the first insulating layer overlapped by the photoresist pattern is thicker than the other portions not overlapped by the photoresist pattern. When the entire TFT is induced to impurities, the active regions substantial below the thicker insulating region form the lightly doped drains.
    • 薄膜晶体管(TFT)具有轻掺杂漏极,其包括重掺杂区域和轻掺杂区域。 轻掺杂漏极通过具有不同厚度的栅极绝缘层的单一掺杂工艺同时形成。 通过在绝缘基板上形成有源层,在有源层上形成绝缘层,在绝缘层上形成导电层,在导电层上形成光致抗蚀剂图案,通过过蚀刻导电 通过使用光致抗蚀剂图案作为掩模。 然后通过使用光致抗蚀剂图案作为掩模来部分蚀刻第一绝缘层。 结果,与光致抗蚀剂图案重叠的第一绝缘层的部分比不与光致抗蚀剂图案重叠的其它部分厚。 当整个TFT被诱导到杂质时,大部分在较厚的绝缘区下面的有源区形成轻掺杂的漏极。
    • 9. 发明授权
    • TET-LCD method for manufacturing the same
    • TET-LCD制造方法
    • US6025216A
    • 2000-02-15
    • US105044
    • 1998-06-26
    • Yong-Min Ha
    • Yong-Min Ha
    • G02F1/136G02F1/1362G02F1/1368H01L21/77H01L21/84H01L27/12H01L29/04
    • G02F1/1368G02F1/136227H01L27/1214
    • A thin film transistor for a liquid crystal display includes a substrate; an active layer having source and drain regions over the substrate; a first insulating layer adjacent to the active layer and having first and second surfaces, the first surface being on an opposite side to the second surface, and the active layer being adjacent to the second surface of the first insulating layer; a gate electrode adjacent to the first surface of the first insulating layer; a first electrode in contact with the source region; a second electrode in contact with the drain region; a second insulating layer on the second electrode; and a third insulating layer over a resultant structure of the substrate.
    • 一种用于液晶显示器的薄膜晶体管包括:基板; 有源层,其在该衬底上具有源区和漏区; 与所述有源层相邻并具有第一和第二表面的第一绝缘层,所述第一表面在与所述第二表面相反的一侧上,所述有源层与所述第一绝缘层的第二表面相邻; 与第一绝缘层的第一表面相邻的栅电极; 与所述源极区域接触的第一电极; 与漏区接触的第二电极; 在第二电极上的第二绝缘层; 以及在所述基板的所得结构上的第三绝缘层。