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1. 发明授权

US09412895B2 Method of manufacturing photoelectric device 有权
标题翻译：制造光电器件的方法
公开(公告)号：US09412895B2
公开(公告)日：2016-08-09
申请号：US13612687
申请日：2012-09-12
申请人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
发明人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
摘要翻译：一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

2. 发明申请

US20130267059A1 METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE 有权
标题翻译：制造光电器件的方法
公开(公告)号：US20130267059A1
公开(公告)日：2013-10-10
申请号：US13612687
申请日：2012-09-12
申请人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
发明人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
摘要翻译：一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

3. 发明授权

US08889981B2 Photoelectric device 有权
标题翻译：光电器件
公开(公告)号：US08889981B2
公开(公告)日：2014-11-18
申请号：US13424450
申请日：2012-03-20
申请人： Doo-Youl Lee , Young-Jin Kim , Dong-Seop Kim , Chan-Bin Mo , Young-Su Kim , Young-Sang Park
发明人： Doo-Youl Lee , Young-Jin Kim , Dong-Seop Kim , Chan-Bin Mo , Young-Su Kim , Young-Sang Park
IPC分类号： H01L31/00 , H01L31/0224 , H01L31/0352 , H01L31/075 , H01L31/0747
CPC分类号： H01L31/022441 , H01L31/0352 , H01L31/0745 , H01L31/0747 , H01L31/075 , Y02E10/547 , Y02E10/548
摘要： A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.
摘要翻译：光电器件在衬底上包括第一半导体结构和第二半导体结构，并且第一半导体结构包括与第二半导体结构不同的导电类型。光电器件还包括第一半导体结构上的第一电极和第二半导体结构上的第二电极以及与第二半导体结构相邻的层间绝缘结构。层间绝缘结构将第一半导体结构与第二半导体结构分开，并将第一半导体结构与第二电极分离。

4. 发明申请

US20130104974A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20130104974A1
公开(公告)日：2013-05-02
申请号：US13620475
申请日：2012-09-14
申请人： Young-Su Kim , Dong-Seop Kim , Doo-Youl Lee , Young-Jin Kim , Young-Sang Park , Chan-Bin Mo , Sung-Chul Lee
发明人： Young-Su Kim , Dong-Seop Kim , Doo-Youl Lee , Young-Jin Kim , Young-Sang Park , Chan-Bin Mo , Sung-Chul Lee
IPC分类号： H01L31/0216
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a silicon substrate including a front surface for receiving light, and a rear surface opposite the front surface, an emitter diffusion region on the rear surface and doped with a first polarity that is opposite to a polarity of the silicon substrate, a base diffusion region on the rear surface of the substrate and doped with a second polarity that is the same as the polarity of the silicon substrate, and an insulation gap between the emitter diffusion region and the base diffusion region, wherein the base diffusion region has a closed polygonal shape, and wherein the insulation gap is adjacent the base diffusion region.
摘要翻译：太阳能电池包括：硅基板，包括用于接收光的前表面和与前表面相对的后表面，在后表面上的发射极扩散区域，并掺杂有与硅基板的极性相反的第一极性; 基底扩散区域，并且掺杂有与硅衬底的极性相同的第二极性，以及发射极扩散区域和基极扩散区域之间的绝缘间隙，其中，基极扩散区域具有闭合的多边形形状，并且其中绝缘间隙与基底扩散区相邻。

5. 发明授权

US09293614B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US09293614B2
公开(公告)日：2016-03-22
申请号：US13565828
申请日：2012-08-03
申请人： Min-Seok Oh , Doo-Youl Lee , Young-Jin Kim , Min Park , Yun-Seok Lee , Nam-Kyu Song , Dong-Seop Kim , Cho-Young Lee , Chan-Bin Mo , Young-Su Kim , Hoon-Ha Jeon , Yeon-Ik Jang , Jun-Ki Hong , Young-Sang Park , Chan-Yoon Jung
发明人： Min-Seok Oh , Doo-Youl Lee , Young-Jin Kim , Min Park , Yun-Seok Lee , Nam-Kyu Song , Dong-Seop Kim , Cho-Young Lee , Chan-Bin Mo , Young-Su Kim , Hoon-Ha Jeon , Yeon-Ik Jang , Jun-Ki Hong , Young-Sang Park , Chan-Yoon Jung
IPC分类号： H01L31/0224 , H01L31/0352 , H01L31/05 , H01L31/068 , H01L31/0747
CPC分类号： H01L31/03529 , H01L31/0224 , H01L31/022408 , H01L31/022425 , H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要： A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.
摘要翻译：一种太阳能电池，包括第一导电型半导体衬底; 在半导体衬底的前表面上的第一本征半导体层; 在所述第一本征半导体层的至少一个表面上的第一导电类型的第一半导体层; 在所述半导体衬底的背面上的第二导电型第二半导体层; 在所述第二半导体层和所述半导体衬底之间的第二本征半导体层; 在所述半导体衬底的背面上的第一导电型第三半导体层，所述第三半导体层与所述第二半导体层间隔开; 以及在第三半导体层和半导体衬底之间的第三本征半导体层。

6. 发明申请

US20130092224A1 PHOTOELECTRIC DEVICE 有权
标题翻译：光电器件
公开(公告)号：US20130092224A1
公开(公告)日：2013-04-18
申请号：US13424450
申请日：2012-03-20
申请人： Doo-Youl LEE , Young-Jin Kim , Dong-Seop Kim , Chan-Bin Mo , Young-Su Kim , Young-Sang Park
发明人： Doo-Youl LEE , Young-Jin Kim , Dong-Seop Kim , Chan-Bin Mo , Young-Su Kim , Young-Sang Park
IPC分类号： H01L31/0216
CPC分类号： H01L31/022441 , H01L31/0352 , H01L31/0745 , H01L31/0747 , H01L31/075 , Y02E10/547 , Y02E10/548
摘要： A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.
摘要翻译：光电器件在衬底上包括第一半导体结构和第二半导体结构，并且第一半导体结构包括与第二半导体结构不同的导电类型。光电器件还包括第一半导体结构上的第一电极和第二半导体结构上的第二电极以及与第二半导体结构相邻的层间绝缘结构。层间绝缘结构将第一半导体结构与第二半导体结构分开，并将第一半导体结构与第二电极分离。

7. 发明申请

US20120107997A1 METHOD OF MANUFACTURING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120107997A1
公开(公告)日：2012-05-03
申请号：US13239197
申请日：2011-09-21
申请人： Young-Jin KIM , Dong-Seop Kim , Doo-Youl Lee , Jun-Hyun Park , Sang-Ho Kim , Ju-Hyun Jeong , Young-Soo Kim , Chan-Bin Mo , Young-Su Kim , Myeong-Woo Kim , Sang-Joon Lee
发明人： Young-Jin KIM , Dong-Seop Kim , Doo-Youl Lee , Jun-Hyun Park , Sang-Ho Kim , Ju-Hyun Jeong , Young-Soo Kim , Chan-Bin Mo , Young-Su Kim , Myeong-Woo Kim , Sang-Joon Lee
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/18 , Y02E10/547
摘要： In a method of manufacturing a solar cell, a first dopant layer is formed on a lower surface of a substrate and a diffusion-preventing layer is formed on an upper surface of the substrate. Then, the first dopant layer is patterned to expose portions of the lower surface of the substrate, and a second dopant layer is formed on the exposed portion of the lower surface of the substrate. A third dopant layer is formed on the diffusion-preventing layer, and the substrate is heated to diffuse dopants from the first, second, and third dopant layers into the substrate, thereby forming semiconductor areas in the substrate.
摘要翻译：在制造太阳能电池的方法中，在基板的下表面上形成第一掺杂剂层，在基板的上表面形成防扩散层。然后，将第一掺杂剂层图案化以暴露衬底的下表面的部分，并且在衬底的下表面的暴露部分上形成第二掺杂剂层。在扩散防止层上形成第三掺杂剂层，并且加热衬底以将掺杂剂从第一，第二和第三掺杂剂层扩散到衬底中，从而在衬底中形成半导体区域。

8. 发明申请

US20120012176A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120012176A1
公开(公告)日：2012-01-19
申请号：US13107310
申请日：2011-05-13
申请人： Young-Jin Kim , Dong-Seop Kim , Doo-Youl Lee , Jun-Hyun Park , Sang-Ho Kim , Ju-Hyun Jeong , Young-Soo Kim , Chan-Bin Mo , Young-Su Kim , Myeong-Woo Kim , Sang-Joon Lee
发明人： Young-Jin Kim , Dong-Seop Kim , Doo-Youl Lee , Jun-Hyun Park , Sang-Ho Kim , Ju-Hyun Jeong , Young-Soo Kim , Chan-Bin Mo , Young-Su Kim , Myeong-Woo Kim , Sang-Joon Lee
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/022441 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： A solar cell includes a substrate, a doped pattern, a contact layer, and an electrode. The substrate includes a first surface onto which sunlight is incident and a second surface facing the first surface. The doped pattern is formed on the second surface of the substrate and the contact layer is formed on the doped pattern. The electrode is formed on the contact layer and is electrically connected to the doped pattern. Accordingly, a contact resistance between the substrate and the electrode may be decreased, so that the doped pattern and the electrode may be uniformly formed and a power efficiency of the solar cell may be improved.
摘要翻译：太阳能电池包括衬底，掺杂图案，接触层和电极。基板包括阳光入射的第一表面和面向第一表面的第二表面。掺杂图案形成在衬底的第二表面上，并且在掺杂图案上形成接触层。电极形成在接触层上并与掺杂图案电连接。因此，可以减小衬底和电极之间的接触电阻，使得可以均匀地形成掺杂图案和电极，并且可以提高太阳能电池的功率效率。

9. 发明申请

US20110048529A1 SOLAR CELL 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20110048529A1
公开(公告)日：2011-03-03
申请号：US12828588
申请日：2010-07-01
申请人： Doo-Youl Lee , Dong-Seop Kim , Jin-Wook Lee , Hwa-Young Ko
发明人： Doo-Youl Lee , Dong-Seop Kim , Jin-Wook Lee , Hwa-Young Ko
IPC分类号： H01L31/0236 , H01L31/0256
CPC分类号： H01L31/068 , H01L31/02245 , Y02E10/547
摘要： A solar cell includes a semiconductor substrate having a plurality of contact holes penetrating therethrough, from one surface to the opposing surface and including a part having a first conductive layer selected from p-type and n-type and a part having a second conductive layer different from the first conductive layer and selected from p-type and n-type semiconductor, a first electrode formed on one surface of the semiconductor substrate and electrically connected with the part having the first conductive layer, a second electrode formed on the other surface of the semiconductor substrate and electrically connected with the first electrode, and a third electrode formed on the same surface as in the second electrode and electrically connected with the part having the second conductive layer of the semiconductor substrate, wherein the plurality of contact holes form a contact hole group, and the first electrode and the second electrode are connected through one or more of the plurality of contact holes of the contact hole group.
摘要翻译：太阳能电池包括从一个表面到相对的表面具有穿过其的多个接触孔的半导体衬底，并且包括具有选自p型和n型的第一导电层的部分和具有不同的第二导电层的部分从所述第一导电层中选择p型和n型半导体，形成在所述半导体衬底的一个表面上并与具有所述第一导电层的部分电连接的第一电极，形成在所述第一导电层的另一个表面上的第二电极半导体衬底并与第一电极电连接;以及第三电极，其形成在与第二电极相同的表面上并与具有半导体衬底的第二导电层的部分电连接，其中多个接触孔形成接触孔并且第一电极和第二电极通过多个中的一个或多个连接的接触孔组的接触孔。

10. 发明授权

US06524880B2 Solar cell and method for fabricating the same 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US06524880B2
公开(公告)日：2003-02-25
申请号：US09912061
申请日：2001-07-25
申请人： In-Sik Moon , Dong-Seop Kim , Soo-Hong Lee
发明人： In-Sik Moon , Dong-Seop Kim , Soo-Hong Lee
IPC分类号： H01L3104
CPC分类号： H01L31/022425 , H01L31/18 , Y02E10/50
摘要： A technique for fabricating a solar cell includes an n+ emitter region first being formed on a front surface of the cell, and then front and rear insulating layers being formed on both sides of the cell. P (Phosphorus)-source and B (Boron)-source are printed on the front and rear insulating layers, respectively, and then both dopants are diffused into the cell at high temperature. Therefore, n++ region in the front side of the cell and BSF (back surface field) region in the rear side of the cell is formed. Front and rear contact patterns are formed on the front and rear insulating layers, respectively. The n++ region and BSF region are exposed after front and rear contacts are formed on the front and rear insulating layers, respectively. The front and rear contacts contact the n++ region and BSF region, respectively.
摘要翻译：制造太阳能电池的技术包括首先形成在电池的前表面上的n +发射极区，然后在电池的两侧形成前后绝缘层。 P（磷）源和B（硼）源分别印刷在前后绝缘层上，然后两种掺杂剂在高温下扩散到电池中。因此，形成电池前侧的n ++区域和电池背面的BSF（背面场）区域。前后接触图案分别形成在前后绝缘层上。在分别在前后绝缘层上形成前后接触后，露出n ++区域和BSF区域。前后触点分别接触n ++区域和BSF区域。

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