专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09412895B2 Method of manufacturing photoelectric device 有权
标题翻译：制造光电器件的方法
公开(公告)号：US09412895B2
公开(公告)日：2016-08-09
申请号：US13612687
申请日：2012-09-12
申请人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
发明人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
摘要翻译：一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

2. 发明申请

US20130267059A1 METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE 有权
标题翻译：制造光电器件的方法
公开(公告)号：US20130267059A1
公开(公告)日：2013-10-10
申请号：US13612687
申请日：2012-09-12
申请人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
发明人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
摘要翻译：一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

3. 发明申请

US20130095597A1 METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE 有权
标题翻译：制造光电器件的方法
公开(公告)号：US20130095597A1
公开(公告)日：2013-04-18
申请号：US13568462
申请日：2012-08-07
申请人： Sang-Jin Park , Min-Chul Song , Sung-Chan Park , Dong-Seop Kim , Won-Gyun Kim , Sang-Won Seo
发明人： Sang-Jin Park , Min-Chul Song , Sung-Chan Park , Dong-Seop Kim , Won-Gyun Kim , Sang-Won Seo
IPC分类号： H01L31/0232 , H01L31/0248
CPC分类号： H01L31/1804 , H01L21/223 , H01L21/2255 , H01L21/2256 , H01L21/268 , H01L31/02363 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.
摘要翻译：一种制造太阳能电池的方法，包括提供具有第一导电类型的半导体衬底; 执行包括形成具有不同于第一导电类型的第二导电类型的第一掺杂材料层的第一沉积工艺; 执行包括在其上加热具有第一掺杂材料层的衬底的驱入工艺; 在执行所述驱入工艺之后执行第二沉积工艺，并且包括在所述第一掺杂材料层上形成第二掺杂材料层，其中所述第二掺杂材料层具有第二导电类型; 用激光局部加热基板，第一掺杂材料层和第二掺杂材料层的部分，以在基板的第一表面上形成接触层; 以及在所述接触层上形成第一电极，在所述基板的与所述第一表面相对的第二表面上形成第二电极。

4. 发明授权

US08664015B2 Method of manufacturing photoelectric device 有权
标题翻译：制造光电器件的方法
公开(公告)号：US08664015B2
公开(公告)日：2014-03-04
申请号：US13568462
申请日：2012-08-07
申请人： Sang-Jin Park , Min-Chul Song , Sung-Chan Park , Dong-Seop Kim , Won-Gyun Kim , Sang-Won Seo
发明人： Sang-Jin Park , Min-Chul Song , Sung-Chan Park , Dong-Seop Kim , Won-Gyun Kim , Sang-Won Seo
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L21/223 , H01L21/2255 , H01L21/2256 , H01L21/268 , H01L31/02363 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.
摘要翻译：一种制造太阳能电池的方法，包括提供具有第一导电类型的半导体衬底; 执行包括形成具有不同于第一导电类型的第二导电类型的第一掺杂材料层的第一沉积工艺; 执行包括在其上加热具有第一掺杂材料层的衬底的驱入工艺; 在执行所述驱入工艺之后执行第二沉积工艺，并且包括在所述第一掺杂材料层上形成第二掺杂材料层，其中所述第二掺杂材料层具有第二导电类型; 用激光局部加热基板，第一掺杂材料层和第二掺杂材料层的部分，以在基板的第一表面上形成接触层; 以及在所述接触层上形成第一电极，在所述基板的与所述第一表面相对的第二表面上形成第二电极。

5. 发明授权

US08865503B2 Back contacting solar cell having P-doped regions and N-doped regions at the same layer and manufacturing method thereof 有权
标题翻译：背面接触相同层具有P掺杂区域和N掺杂区域的太阳能电池及其制造方法
公开(公告)号：US08865503B2
公开(公告)日：2014-10-21
申请号：US13413629
申请日：2012-03-06
申请人： Won-Gyun Kim , Hee-June Kwak , Sang-Jin Park , Sang-Won Seo , Young-Jin Kim
发明人： Won-Gyun Kim , Hee-June Kwak , Sang-Jin Park , Sang-Won Seo , Young-Jin Kim
IPC分类号： H01L31/04 , H01L31/068
CPC分类号： H01L31/0682 , Y02E10/547
摘要： A method for forming doped regions in a solar cell includes preparing a first and second surface of a substrate, forming a first doped region doped with a first dopant in a part of the first surface, forming a silicon oxide layer on the first surface, the silicon oxide layer including a first silicon oxide layer on the first doped region and having a first thickness, and a second silicon oxide layer on a portion of the first surface not doped by the first dopant and having a second thickness that is less than the first thickness, implanting a second dopant from outside the first surface into the first silicon oxide layer and the second silicon oxide layer, and forming a second doped region adjacent the first doped region by performing heat treatment on the first silicon oxide layer, the second silicon oxide layer, and the substrate.
摘要翻译：在太阳能电池中形成掺杂区域的方法包括：制备衬底的第一和第二表面，在第一表面的一部分中形成掺杂有第一掺杂剂的第一掺杂区，在第一表面上形成氧化硅层，氧化硅层包括第一掺杂区上的第一氧化硅层并具有第一厚度，第二氧化硅层在第一表面的不被第一掺杂物掺杂的部分上，并且具有小于第一掺杂区的第一厚度厚度，从第一表面外部注入第二掺杂剂到第一氧化硅层和第二氧化硅层中，以及通过对第一氧化硅层进行热处理形成与第一掺杂区相邻的第二掺杂区，第二氧化硅层和基板。

6. 发明申请

US20120273040A1 Solar Cell and Manufacturing Method Thereof 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120273040A1
公开(公告)日：2012-11-01
申请号：US13413629
申请日：2012-03-06
申请人： Won-Gyun Kim , Hee-June Kwak , Sang-Jin Park , Sang-Won Seo , Young-Jin Kim
发明人： Won-Gyun Kim , Hee-June Kwak , Sang-Jin Park , Sang-Won Seo , Young-Jin Kim
IPC分类号： H01L31/0232 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/0682 , Y02E10/547
摘要： A method for forming a doped region in a solar cell includes preparing a first and second surface of a substrate, forming a first doped region doped with a first dopant in a part of the first surface, forming a silicon oxide layer on the first surface, the silicon oxide layer including a first silicon oxide layer on the first doped region and having a first thickness, and a second silicon oxide layer on a portion of the first surface undoped by the first dopant and having a second thickness that is less than the first thickness, implanting a second dopant from outside the first surface into the first silicon oxide layer and the second silicon oxide layer, and forming a second doped region adjacent the first doped region by performing heat treatment on the first silicon oxide layer, the second silicon oxide layer, and the substrate.
摘要翻译：在太阳能电池中形成掺杂区域的方法包括：制备衬底的第一和第二表面，在第一表面的一部分中形成掺杂有第一掺杂剂的第一掺杂区，在第一表面上形成氧化硅层; 所述氧化硅层在所述第一掺杂区域上包括第一氧化硅层并且具有第一厚度，以及在所述第一表面的由所述第一掺杂物掺杂的部分上的第二氧化硅层，并且具有小于所述第一厚度的第一厚度厚度，从第一表面外部注入第二掺杂剂到第一氧化硅层和第二氧化硅层中，以及通过对第一氧化硅层进行热处理形成与第一掺杂区相邻的第二掺杂区，第二氧化硅层和基板。

7. 发明申请

US20120164456A1 Polyester Film for Protecting Polarizing Plate 审中-公开
标题翻译：用于保护偏光板的聚酯薄膜
公开(公告)号：US20120164456A1
公开(公告)日：2012-06-28
申请号：US13233813
申请日：2011-09-15
申请人： Bo-Soo Seo , Sang-Won Seo , Chang-Ik Hwang , Sang-Pil Kim
发明人： Bo-Soo Seo , Sang-Won Seo , Chang-Ik Hwang , Sang-Pil Kim
IPC分类号： B32B27/18 , B32B27/36 , G02B5/30 , B32B27/08
CPC分类号： G02B1/16 , B32B27/322 , B32B27/36 , B32B27/40 , B32B2457/20 , G02B1/105 , G02B1/14 , G02B1/18 , G02B5/3025 , Y10T428/31533 , Y10T428/3154 , Y10T428/31544
摘要： A polyester film for protecting a polarizing plate is provided wherein the polyester film includes a polyester substrate film, and an anti-static layer provided on at least one surface of the polyester substrate film, the anti-static layer coated with an anti-static coating solution comprising a conductive polymer resin, a polyurethane resin, a cross linking agent and a fluoro resin wherein the anti-static coating solution comprises, on a basis of 100 parts by weight of the conductive polymer resin, about 100 to about 1,000 parts of the polyurethane resin, about 100 to about 2000 parts of the cross linking agent and about 30 to about 300 parts of the fluoro resin.
摘要翻译：提供了一种用于保护偏振片的聚酯膜，其中聚酯膜包括聚酯基底膜，以及设置在聚酯基材膜的至少一个表面上的防静电层，涂有抗静电涂层的防静电层包含导电聚合物树脂，聚氨酯树脂，交联剂和氟树脂的溶液，其中所述防静电涂布溶液基于100重量份的导电聚合物树脂，包含约100至约1,000份的聚氨酯树脂，约100至约2000份交联剂和约30至约300份氟树脂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式