专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08058180B2 Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture 失效
标题翻译：使用氨和过氧化物混合物的稀水溶液制造半导体器件的方法
公开(公告)号：US08058180B2
公开(公告)日：2011-11-15
申请号：US12032048
申请日：2008-02-15
申请人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
发明人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02052
摘要： This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
摘要翻译：本发明提供制造半导体器件的方法，其中在半导体衬底上形成合金层以形成衬底结构，该方法包括使用稀氨水溶液和过氧化物混合物（APM）进行清洗和/或湿蚀刻处理步骤在衬底结构上。

2. 发明申请

US20050260830A1 Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture 失效
标题翻译：使用氨和过氧化物混合物的稀水溶液制造半导体器件的方法
公开(公告)号：US20050260830A1
公开(公告)日：2005-11-24
申请号：US11089208
申请日：2005-03-24
申请人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
发明人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
IPC分类号： H01L21/304 , C30B1/00 , H01L21/00 , H01L21/20 , H01L21/306 , H01L21/36
CPC分类号： H01L21/02052
摘要： This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
摘要翻译：本发明提供制造半导体器件的方法，其中在半导体衬底上形成合金层以形成衬底结构，该方法包括使用稀氨水溶液和过氧化物混合物（APM）进行清洗和/或湿蚀刻处理步骤在衬底结构上。

3. 发明申请

US20080194110A1 METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING A DILUTE AQUEOUS SOLUTION OF AN AMMONIA AND PEROXIDE MIXTURE 失效
标题翻译：使用氨水和过氧化物混合物的稀释水溶液制备半导体器件的方法
公开(公告)号：US20080194110A1
公开(公告)日：2008-08-14
申请号：US12032048
申请日：2008-02-15
申请人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
发明人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
IPC分类号： H01L21/302
CPC分类号： H01L21/02052
摘要： This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
摘要翻译：本发明提供制造半导体器件的方法，其中在半导体衬底上形成合金层以形成衬底结构，该方法包括使用稀氨水溶液和过氧化物混合物（APM）进行清洗和/或湿蚀刻处理步骤在衬底结构上。

4. 发明授权

US07354868B2 Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture 失效
标题翻译：使用氨和过氧化物混合物的稀水溶液制造半导体器件的方法
公开(公告)号：US07354868B2
公开(公告)日：2008-04-08
申请号：US11089208
申请日：2005-03-24
申请人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
发明人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02052
摘要： This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
摘要翻译：本发明提供制造半导体器件的方法，其中在半导体衬底上形成合金层以形成衬底结构，该方法包括使用稀氨水溶液和过氧化物混合物（APM）进行清洗和/或湿蚀刻处理步骤在衬底结构上。

5. 发明授权

US07344999B2 Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device 有权
标题翻译：用于清洁具有暴露的硅和锗锗层的衬底的方法和用于制造半导体器件的相关方法
公开(公告)号：US07344999B2
公开(公告)日：2008-03-18
申请号：US11527473
申请日：2006-09-27
申请人： Chang-Sup Mun , Woo-Gwan Shim , Han-Ku Cho , Chang-Ki Hong , Doo-Won Kwon
发明人： Chang-Sup Mun , Woo-Gwan Shim , Han-Ku Cho , Chang-Ki Hong , Doo-Won Kwon
IPC分类号： H01L21/302
CPC分类号： H01L21/02057 , H01L21/02082
摘要： A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), and deionized water (H2O), and the second cleaning solution comprises at least 200 times more deionized water (H2O) than ammonium hydroxide (NH4OH) by volume.
摘要翻译：公开了一种用于清洁其上形成和暴露硅层和硅锗层的衬底的方法，以及使用该清洁方法制造半导体器件的方法。该清洗方法包括：制备半导体衬底，在其上形成和暴露硅层和硅锗层; 以及执行使用第一清洁溶液以从半导体衬底去除自然氧化物层的第一清洁子过程。清洁方法还包括在执行第一清洁子过程之后在半导体衬底上执行第二清洁子处理，其中第二清洁子处理包括使用第二清洁溶液。此外，第二清洗溶液包括氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2）和去离子水（ H 2 O），并且第二清洁溶液包含比氢氧化铵（NH 4 O 2）少至少200倍的去离子水（H 2 O 2 O） OH）。

6. 发明申请

US20070072431A1 Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device 有权
标题翻译：用于清洁具有暴露的硅和锗锗层的衬底的方法和用于制造半导体器件的相关方法
公开(公告)号：US20070072431A1
公开(公告)日：2007-03-29
申请号：US11527473
申请日：2006-09-27
申请人： Chang-Sup Mun , Woo-Gwan Shim , Han-Ku Cho , Chang-Ki Hong , Doo-Won Kwon
发明人： Chang-Sup Mun , Woo-Gwan Shim , Han-Ku Cho , Chang-Ki Hong , Doo-Won Kwon
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02057 , H01L21/02082
摘要： A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), and deionized water (H2O), and the second cleaning solution comprises at least 200 times more deionized water (H2O) than ammonium hydroxide (NH4OH) by volume.
摘要翻译：公开了一种用于清洁其上形成和暴露硅层和硅锗层的衬底的方法，以及使用该清洁方法制造半导体器件的方法。该清洗方法包括：制备半导体衬底，在其上形成和暴露硅层和硅锗层; 以及执行使用第一清洁溶液从半导体衬底去除自然氧化物层的第一清洁子过程。清洁方法还包括在执行第一清洁子过程之后在半导体衬底上执行第二清洁子处理，其中第二清洁子处理包括使用第二清洁溶液。此外，第二清洗溶液包括氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2）和去离子水（ H 2 O），并且第二清洁溶液包含比氢氧化铵（NH 4 O 2）少至少200倍的去离子水（H 2 O 2 O） OH）。

7. 发明申请

US20090023265A1 ETCHING SOLUTION FOR REMOVAL OF OXIDE FILM, METHOD FOR PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于除去氧化膜的蚀刻溶液，其制备方法和制备半导体器件的方法
公开(公告)号：US20090023265A1
公开(公告)日：2009-01-22
申请号：US12243728
申请日：2008-10-01
申请人： CHANG-SUP MUN , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： CHANG-SUP MUN , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/762 , H01L21/306 , H01L21/02
CPC分类号： H01L21/31111 , H01L21/76224 , H01L28/40
摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+,R1—PO42—(HA+)2,(R1)2—PO4—HA+, or R1—SO3—HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.
摘要翻译：提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。阴离子表面活性剂是其中以R1-OSO3-HA +，R1-CO2-HA +，R1-PO42-（HA +）2，（R1）2-PO4-HA + 或R1-SO3-HA +，其中R1是C4至C22的直链或支链烃基，A是氨或胺。蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物电影。

8. 发明申请

US20060183297A1 Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor device 审中-公开
标题翻译：用于去除氧化膜的蚀刻溶液，其制备方法以及制造半导体器件的方法
公开(公告)号：US20060183297A1
公开(公告)日：2006-08-17
申请号：US11130030
申请日：2005-05-16
申请人： Chang-Sup Mun , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Chang-Sup Mun , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/30 , H01L21/302 , H01L21/46
CPC分类号： H01L21/31111 , H01L21/76224 , H01L28/40
摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+, R1—PO42−(HA+)2, (R1)2—PO4−HA+, or R1—SO3−HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.
摘要翻译：提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。阴离子表面活性剂是其中加入作为抗衡离子的动物盐的化合物，如R 1〜N 3 O 3 - R 1，R 2，R 1，R 1，...，R 1，（R 1）2 - - - - - （4）其中R 1，R 2， / SUB>）2 + 或其中R 1是C 4的直链或支链烃基，其中R 1是直链或支链C 1 -C 4烷基， C 22和A是氨或胺。蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物电影。

9. 发明申请

US20070111432A1 Semiconductor device having capacitor and method of fabricating the same 有权
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US20070111432A1
公开(公告)日：2007-05-17
申请号：US11593067
申请日：2006-11-06
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L21/31116 , H01L27/10817 , H01L27/10852
摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.
摘要翻译：可以提供具有电容器的半导体器件及其制造方法。制造半导体器件的方法可以包括在衬底上顺序地形成蚀刻停止层和模制层，图案化模具层以形成露出蚀刻停止层的一部分的模具电极孔，通过以下步骤选择性地蚀刻暴露的蚀刻停止层：各向同性干蚀刻工艺，以形成通过蚀刻停止层的接触电极孔，以露出衬底的一部分，在衬底上形成导电层，并去除模层上的模层上的导电层，形成圆柱形底电极在模具和接触电极孔中。各向同性干蚀刻工艺可以利用包括主蚀刻气体和选择性调节气体的工艺气体。选择性调节气体可以通过各向同性湿蚀刻工艺增加蚀刻停止层的蚀刻速率超过模具层的蚀刻速率。

10. 发明授权

US07985999B2 Semiconductor device having capacitor 失效
标题翻译：具有电容器的半导体器件
公开(公告)号：US07985999B2
公开(公告)日：2011-07-26
申请号：US12659724
申请日：2010-03-18
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
IPC分类号： H01L27/108
CPC分类号： H01L28/91 , H01L21/31116 , H01L27/10817 , H01L27/10852
摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.
摘要翻译：可以提供具有电容器的半导体器件及其制造方法。制造半导体器件的方法可以包括在衬底上顺序地形成蚀刻停止层和模制层，图案化模具层以形成露出蚀刻停止层的一部分的模具电极孔，通过以下步骤选择性地蚀刻暴露的蚀刻停止层：各向同性干蚀刻工艺，以形成通过蚀刻停止层的接触电极孔，以露出衬底的一部分，在衬底上形成导电层，并去除模层上的模层上的导电层，形成圆柱形底电极在模具和接触电极孔中。各向同性干蚀刻工艺可以利用包括主蚀刻气体和选择性调节气体的工艺气体。选择性调节气体可以通过各向同性湿蚀刻工艺增加蚀刻停止层的蚀刻速率超过模具层的蚀刻速率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式