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1. 发明申请

US20160109794A1 PHOTOMASK AND METHOD OF FORMING THE SAME AND METHODS OF MANUFACTURING ELECTRONIC DEVICE AND DISPLAY DEVICE USING THE PHOTOMASK 有权
标题翻译：照相机及其制造方法和使用光电子器件制造电子器件和显示器件的方法
公开(公告)号：US20160109794A1
公开(公告)日：2016-04-21
申请号：US14849006
申请日：2015-09-09
申请人： IL-yong JANG , Hyung-ho KO , Jin-sang YOON
发明人： IL-yong JANG , Hyung-ho KO , Jin-sang YOON
IPC分类号： G03F1/26 , G03F7/22
CPC分类号： G03F7/22 , G03F1/32 , G03F1/42 , G03F7/203
摘要： A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.
摘要翻译：相移掩模包括衬底，衬底上的第二相移图案，延伸到衬底的最外周边的第二相移图案，第二相移图案由对半导体衬底的光透射的材料形成所述第一波长和所述基板对于所述第一波长的光基本上是透明的，使得所述掩模以所述第二相移图案透射所述第一波长的光的约2至约10％，并且在所述基板上发射第一相移图案，第二相移图案设置在基板的最外周边与第一相移图案之间。

2. 发明授权

US08414708B2 Method and apparatus for cleaning photomask 有权
标题翻译：清洗光掩模的方法和设备
公开(公告)号：US08414708B2
公开(公告)日：2013-04-09
申请号：US12846181
申请日：2010-07-29
申请人： Yun-song Jeong , Hyung-ho Ko , Sung-jae Han , Kyung-noh Kim , Chan-uk Jeon
发明人： Yun-song Jeong , Hyung-ho Ko , Sung-jae Han , Kyung-noh Kim , Chan-uk Jeon
IPC分类号： B08B3/04
CPC分类号： G03F1/82
摘要： Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.
摘要翻译：提供了一种用于清洁光掩模的方法和装置。包括第一区域和围绕第一区域的第二区域的光掩模，设置在第一区域上的要被保护的图案和待除去的材料存在于第二区域上。从第二区域的内部区域朝向第二区域的外部区域喷射清洁液体以除去材料，并且从第一区域向第二区域吹送气体以保护图案。

3. 发明授权

US08058180B2 Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture 失效
标题翻译：使用氨和过氧化物混合物的稀水溶液制造半导体器件的方法
公开(公告)号：US08058180B2
公开(公告)日：2011-11-15
申请号：US12032048
申请日：2008-02-15
申请人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
发明人： Doo-Won Kwon , Hyung-Ho Ko , Chang-Sup Mun , Woo-Gwan Shim , Im-Soo Park , Yu-Kyung Kim , Jeong-Nam Han
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02052
摘要： This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
摘要翻译：本发明提供制造半导体器件的方法，其中在半导体衬底上形成合金层以形成衬底结构，该方法包括使用稀氨水溶液和过氧化物混合物（APM）进行清洗和/或湿蚀刻处理步骤在衬底结构上。

4. 发明授权

US09370805B2 Method of megasonic cleaning of an object 有权
标题翻译：超声波清洗方法
公开(公告)号：US09370805B2
公开(公告)日：2016-06-21
申请号：US13618521
申请日：2012-09-14
申请人： Jae-Hyuck Choi , Won-Jung Kim , Ho-Young Kim , Hyung-Ho Ko , Jong-Keun Oh , Chan-Uk Jeon , Keun-Hwan Park
发明人： Jae-Hyuck Choi , Won-Jung Kim , Ho-Young Kim , Hyung-Ho Ko , Jong-Keun Oh , Chan-Uk Jeon , Keun-Hwan Park
IPC分类号： B08B3/12 , G03F1/82 , H01L21/02 , H01L21/67
CPC分类号： B08B3/12 , G03F1/82 , H01L21/02057 , H01L21/67057
摘要： A megasonic cleaning method and a megasonic cleaning apparatus are provided. Microcavitation bubbles may be formed by applying an electromotive force to a cleaning solution using a megasonic energy in a separate room from an object to be cleaned. The microcavitation bubbles having a stable oscillation among the formed microcavitation bubbles may be moved to the object to be cleaned. A surface of the object to be cleaned may be cleaned using the microcavitation bubbles having the stable oscillation. Particles attached onto the surface of the object to be cleaned may be effectively removed while preventing pattern damage.
摘要翻译：提供了一种兆声波清洗方法和一种超声波清洗装置。微气泡可以通过使用超声波能量在与要清洁的物体分离的房间中的清洁溶液施加电动势来形成。在形成的微气泡之间具有稳定振荡的微气泡可以移动到要清洁的物体。可以使用具有稳定振荡的微气泡来清洁待清洁物体的表面。可以有效地除去附着在待清洁物体表面上的颗粒，同时防止图案损坏。

5. 发明授权

US08293020B2 Method of megasonic cleaning of an object 有权
标题翻译：超声波清洗方法
公开(公告)号：US08293020B2
公开(公告)日：2012-10-23
申请号：US12907642
申请日：2010-10-19
申请人： Jae-Hyuck Choi , Won-Jung Kim , Ho-Young Kim , Hyung-Ho Ko , Jong-Keun Oh , Chan-Uk Jeon , Keun-Hwan Park
发明人： Jae-Hyuck Choi , Won-Jung Kim , Ho-Young Kim , Hyung-Ho Ko , Jong-Keun Oh , Chan-Uk Jeon , Keun-Hwan Park
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , G03F1/82 , H01L21/02057 , H01L21/67057
摘要： A megasonic cleaning method and a megasonic cleaning apparatus are provided. Microcavitation bubbles may be formed by applying an electromotive force to a cleaning solution using a megasonic energy in a separate room from an object to be cleaned. The microcavitation bubbles having a stable oscillation among the formed microcavitation bubbles may be moved to the object to be cleaned. A surface of the object to be cleaned may be cleaned using the microcavitation bubbles having the stable oscillation. Particles attached onto the surface of the object to be cleaned may be effectively removed while preventing pattern damage.
摘要翻译：提供了一种兆声波清洗方法和一种超声波清洗装置。微气泡可以通过使用超声波能量在与要清洁的物体分离的房间中的清洁溶液施加电动势来形成。在形成的微气泡之间具有稳定振荡的微气泡可以移动到要清洁的物体。可以使用具有稳定振荡的微气泡来清洁待清洁物体的表面。可以有效地除去附着在待清洁物体表面上的颗粒，同时防止图案损坏。

6. 发明授权

US07989123B2 Photomask including ion trapping layer and method of manufacturing semiconductor device using the photomask 有权
标题翻译：包括离子捕获层的光掩模和使用光掩模制造半导体器件的方法
公开(公告)号：US07989123B2
公开(公告)日：2011-08-02
申请号：US12456500
申请日：2009-06-17
申请人： Han-shin Lee , Jae-hyuck Choi , Hae-young Jeong , Hyung-ho Ko , Jin-sik Jung , Jong-keun Oh , Soo-jung Kang
发明人： Han-shin Lee , Jae-hyuck Choi , Hae-young Jeong , Hyung-ho Ko , Jin-sik Jung , Jong-keun Oh , Soo-jung Kang
IPC分类号： G03F1/00
CPC分类号： G03F1/60 , G03F1/48
摘要： A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.
摘要翻译：光掩模包括离子捕获层，并且制造半导体器件的方法使用光掩模。光掩模包括透明基板和形成在透明基板的第一区域上的离子捕获层，以捕获存在于透明基板附近的离子。在半导体装置的制造中，通过在透明基板上形成有离子捕获层的光掩模使形成在基板上的感光膜露出，利用曝光得到的感光膜对基板进行处理。

7. 发明申请

US20110023914A1 METHOD AND APPARATUS FOR CLEANING PHOTOMASK 有权
标题翻译：清洗光电子的方法和装置
公开(公告)号：US20110023914A1
公开(公告)日：2011-02-03
申请号：US12846181
申请日：2010-07-29
申请人： Yun-song Jeong , Hyung-ho Ko , Sung-jae Han , Kyung-noh Kim , Chan-uk Jeon
发明人： Yun-song Jeong , Hyung-ho Ko , Sung-jae Han , Kyung-noh Kim , Chan-uk Jeon
IPC分类号： B08B7/04
CPC分类号： G03F1/82
摘要： Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.
摘要翻译：提供了一种用于清洁光掩模的方法和装置。包括第一区域和围绕第一区域的第二区域的光掩模，设置在第一区域上的要被保护的图案和待除去的材料存在于第二区域上。从第二区域的内部区域朝向第二区域的外部区域喷射清洁液体以除去材料，并且从第一区域向第二区域吹送气体以保护图案。

8. 发明授权

US07318870B2 Method of cleaning semiconductor substrate 失效
标题翻译：半导体衬底的清洗方法
公开(公告)号：US07318870B2
公开(公告)日：2008-01-15
申请号：US10421740
申请日：2003-04-24
申请人： Dong-Gyun Han , Hyung-Ho Ko , Young-Jun Kim , Ki-Jong Park
发明人： Dong-Gyun Han , Hyung-Ho Ko , Young-Jun Kim , Ki-Jong Park
IPC分类号： B08B7/00
CPC分类号： H01L21/02065 , B08B7/00
摘要： A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O3) into the cleaning chamber. This process operates to cleanse the semiconductor substrate without corrosion or etching of the semiconductor substrate; even when the substrate has metal layer made of tungsten.
摘要翻译：一种用于半导体衬底的清洁方法，包括将半导体衬底放置在清洁室中并将臭氧气体（O 3 3）注入到清洁室中。该过程用于清洁半导体衬底而不会腐蚀或蚀刻半导体衬底; 即使当基板具有由钨制成的金属层时。

9. 发明申请

US20050169096A1 PAA- based etchant, methods of using same, and resultant structures 有权
标题翻译：基于PAA的蚀刻剂，使用它的方法和所得结构
公开(公告)号：US20050169096A1
公开(公告)日：2005-08-04
申请号：US10976161
申请日：2004-10-29
申请人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
发明人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/308 , C09K13/08 , C23F1/24 , G11C8/02 , H01L21/306 , H01L21/3213 , H01L21/336 , H01L21/8238 , H01L21/8242 , H01L27/108 , H01L29/786
CPC分类号： H01L29/78696 , C09K13/08 , H01L21/30604 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/823807 , H01L21/823828 , H01L27/10826 , H01L27/10852 , H01L28/91 , H01L29/42392 , H01L29/66772 , H01L29/66795 , H01L29/66818 , H01L29/785
摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
摘要翻译：湿蚀刻组合物可以包括：过乙酸（PAA）; 和氟化酸; 组合物中PAA的相对量足以确保与（N掺杂SiGe）的蚀刻速率基本相同的（P掺杂SiGe）:( P掺杂Si）的蚀刻速率：（N掺杂Si）。这种湿蚀刻组合物在下文中称为基于PAA的蚀刻剂，并且可以用于制造例如CMOS MBCFET，电容器的电极等

10. 发明授权

US06844229B2 Method of manufacturing semiconductor device having storage electrode of capacitor 失效
标题翻译：制造具有电容器的存储电极的半导体器件的方法
公开(公告)号：US06844229B2
公开(公告)日：2005-01-18
申请号：US09999150
申请日：2001-10-31
申请人： Moon-hee Lee , Woo-gwan Shim , Hyung-ho Ko , Jong-ho Chung
发明人： Moon-hee Lee , Woo-gwan Shim , Hyung-ho Ko , Jong-ho Chung
IPC分类号： H01L27/108 , H01L21/02 , H01L21/8242
CPC分类号： H01L28/91 , H01L27/10855
摘要： A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed. The method further includes the steps of: forming a conductive pad electrically connected to the semiconductor substrate and a lower insulating layer surrounding the conductive pad; and forming bit line stacks on the lower insulating layer, wherein the interlayer dielectric layer covers the bit line stacks, and the contact hole between the bit line stacks exposes the conductive pad.
摘要翻译：提供一种制造具有电容器的存储电极的半导体器件的方法。该方法包括以下步骤：形成穿过半导体衬底上的层间电介质层的接触孔; 形成导电插塞以填充接触孔并暴露层间电介质层的表面; 在所述层间电介质层上形成模具以暴露所述导电插塞的表面; 使导电插塞的上表面凹陷以暴露层间电介质层的侧壁的一部分; 形成电极层以覆盖凹入的导电插塞，以及层间绝缘层的侧壁和模具; 并且除去电极层的上表面以形成存储电极，直到模具露出。该方法还包括以下步骤：形成电连接到半导体衬底的导电焊盘和围绕导电焊盘的下绝缘层; 以及在所述下绝缘层上形成位线堆叠，其中所述层间电介质层覆盖所述位线堆叠，并且所述位线堆叠之间的所述接触孔暴露所述导电焊盘。

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