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1. 发明申请

US20090231914A1 Memory devices and methods 有权
标题翻译：内存设备和方法
公开(公告)号：US20090231914A1
公开(公告)日：2009-09-17
申请号：US12232150
申请日：2008-09-11
申请人： Donghun Yu , Kyoung Lae Cho , Dongku Kang , Dong Hyuk Chae , Jun Jin Kong
发明人： Donghun Yu , Kyoung Lae Cho , Dongku Kang , Dong Hyuk Chae , Jun Jin Kong
IPC分类号： G11C16/06 , G11C16/00
CPC分类号： G11C16/26 , G06F11/1072 , G11C11/5628 , G11C11/5642 , G11C29/00 , G11C2029/0411 , G11C2211/5621
摘要： Disclosed are a memory device and a memory data reading method. The memory device may include a multi-bit cell array, a threshold voltage detecting unit configured to detect first threshold voltage intervals including threshold voltages of multi-bit cells of the multi-bit cell array from among a plurality of threshold voltage intervals, a determination unit configured to determine data of a first bit layer based on the detected first threshold voltage intervals, and an error detection unit configured to detect an error bit of the data of the first bit layer. In this instance, the determination unit may determine data of a second bit layer using a second threshold voltage interval having a value of the first bit layer different from the detected error bit and being nearest to a threshold voltage of a multi-bit cell corresponding to the detected error bit.
摘要翻译：公开了一种存储器件和存储器数据读取方法。存储器件可以包括多位单元阵列，阈值电压检测单元，被配置为从多个阈值电压间隔中检测包括多位单元阵列的多位单元的阈值电压的第一阈值电压间隔，单元，被配置为基于检测到的第一阈值电压间隔来确定第一位层的数据;以及错误检测单元，被配置为检测第一位层的数据的错误位。在这种情况下，确定单元可以使用具有与检测到的错误位不同的第一位层的值的第二阈值电压间隔来确定第二位层的数据，并且最接近对应于多个位单元的阈值电压检测到错误位。

2. 发明授权

US07903459B2 Memory devices and methods for determining data of bit layers based on detected error bits 有权
标题翻译：用于基于检测到的错误位来确定位层的数据的存储器件和方法
公开(公告)号：US07903459B2
公开(公告)日：2011-03-08
申请号：US12232150
申请日：2008-09-11
申请人： Donghun Yu , Kyoung Lae Cho , Dongku Kang , Dong Hyuk Chae , Jun Jin Kong
发明人： Donghun Yu , Kyoung Lae Cho , Dongku Kang , Dong Hyuk Chae , Jun Jin Kong
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G06F11/1072 , G11C11/5628 , G11C11/5642 , G11C29/00 , G11C2029/0411 , G11C2211/5621
摘要： Disclosed are a memory device and a memory data reading method. The memory device may include a multi-bit cell array, a threshold voltage detecting unit configured to detect first threshold voltage intervals including threshold voltages of multi-bit cells of the multi-bit cell array from among a plurality of threshold voltage intervals, a determination unit configured to determine data of a first bit layer based on the detected first threshold voltage intervals, and an error detection unit configured to detect an error bit of the data of the first bit layer. In this instance, the determination unit may determine data of a second bit layer using a second threshold voltage interval having a value of the first bit layer different from the detected error bit and being nearest to a threshold voltage of a multi-bit cell corresponding to the detected error bit.
摘要翻译：公开了一种存储器件和存储器数据读取方法。存储器件可以包括多位单元阵列，阈值电压检测单元，被配置为从多个阈值电压间隔中检测包括多位单元阵列的多位单元的阈值电压的第一阈值电压间隔，单元，被配置为基于检测到的第一阈值电压间隔来确定第一位层的数据;以及错误检测单元，被配置为检测第一位层的数据的错误位。在这种情况下，确定单元可以使用具有与检测到的错误位不同的第一位层的值的第二阈值电压间隔来确定第二位层的数据，并且最接近对应于多个位单元的阈值电压检测到错误位。

3. 发明授权

US08479085B2 Memory system with error correction decoder architecture having reduced latency and increased throughput 有权
标题翻译：具有纠错解码器架构的存储器系统具有降低的延迟和增加的吞吐量
公开(公告)号：US08479085B2
公开(公告)日：2013-07-02
申请号：US12191458
申请日：2008-08-14
申请人： Nam Phil Jo , Jun Jin Kong , Chan Ho Yoon , Dong Hyuk Chae , Kyoung Lae Cho
发明人： Nam Phil Jo , Jun Jin Kong , Chan Ho Yoon , Dong Hyuk Chae , Kyoung Lae Cho
IPC分类号： G06F11/00
CPC分类号： G06F11/1068 , G11C7/1006 , G11C2029/0411
摘要： A memory system includes: a memory controller including an error correction decoder. The error correction decoder includes: a demultiplexer adapted to receive data and demultiplex the data into a first set of data and a second set of data; first and second buffer memories for storing the first and second sets of data, respectively; an error detector; an error corrector; and a multiplexer adapted to multiplex the first set of data and the second set of data and to provide the multiplexed data to the error corrector. While the error corrector corrects errors in the first set of data, the error detector detects errors in the second set of data stored in the second buffer memory.
摘要翻译：存储器系统包括：包括纠错解码器的存储器控制器。纠错解码器包括：解复用器，适于接收数据并将数据解复用为第一组数据和第二组数据; 用于分别存储第一和第二组数据的第一和第二缓冲存储器; 误差检测器; 误差校正器以及多路复用器，其适于多路复用第一组数据和第二组数据，并将复用的数据提供给误差校正器。当误差校正器校正第一组数据中的错误时，误差检测器检测存储在第二缓冲存储器中的第二组数据中的错误。

4. 发明授权

US07706181B2 Multi-bit programming device and method using single-bit memory cells 有权
标题翻译：多位编程设备和使用单位存储单元的方法
公开(公告)号：US07706181B2
公开(公告)日：2010-04-27
申请号：US11896349
申请日：2007-08-31
申请人： Sung-Jae Byun , Dong Hyuk Chae , Kyoung Lae Cho , Jun Jin Kong , Young Hwan Lee , Seung Jae Lee , Nam Phil Jo , Dong Ku Kang
发明人： Sung-Jae Byun , Dong Hyuk Chae , Kyoung Lae Cho , Jun Jin Kong , Young Hwan Lee , Seung Jae Lee , Nam Phil Jo , Dong Ku Kang
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C11/5628 , G11C2211/5621 , G11C2211/5641
摘要： A multi-bit programming device and method for a non-volatile memory are provided. In one example embodiment, a multi-bit programming device may include a multi-bit programming unit configured to multi-bit program original multi-bit data to a target memory cell in a memory cell array, and a backup programming unit configured to select backup memory cells in the memory cell array with respect to each bit of the original multi-bit data, and program each bit of the original multi-bit data to a respective one of the selected backup memory cells.
摘要翻译：提供了一种用于非易失性存储器的多位编程设备和方法。在一个示例实施例中，多位编程设备可以包括多位编程单元，其被配置为将原始多位数据多位地编程到存储单元阵列中的目标存储器单元，以及备份编程单元，被配置为选择备份相对于原始多位数据的每个位存储单元阵列中的存储器单元，以及将原始多位数据的每个位编程到所选择的备份存储器单元中的相应一个。

5. 发明申请

US20090046510A1 Apparatus and method for multi-bit programming 审中-公开
标题翻译：多位编程的装置和方法
公开(公告)号：US20090046510A1
公开(公告)日：2009-02-19
申请号：US12007775
申请日：2008-01-15
申请人： Seung-Hwan Song , Jun Jin Kong , Sung Chung Park , Heeseok Eun , Dong Hyuk Chae , Kyoung Lae Cho
发明人： Seung-Hwan Song , Jun Jin Kong , Sung Chung Park , Heeseok Eun , Dong Hyuk Chae , Kyoung Lae Cho
IPC分类号： G11C7/10
CPC分类号： G11C11/5628 , G11C16/0483 , G11C2211/5641
摘要： Multi-bit programming apparatuses and methods are provided. A multi-bit programming apparatus may include: a first programming unit that stores data corresponding to a number of first bits in at least one first memory cell that may be connected to at least one first bit line; and a second programming unit that stores data corresponding to a number of second bits in at least one second memory cell that may be connected to at least one second bit line. Through this, it may be possible to improve data reliability and increase a number of bits to be stored in the entire memory cell.
摘要翻译：提供了多位编程设备和方法。一种多位编程设备可以包括：第一编程单元，其存储对应于可连接到至少一个第一位线的至少一个第一存储器单元中的多个第一位的数据; 以及第二编程单元，其将可能连接到至少一个第二位线的至少一个第二存储器单元中的与第二位数相对应的数据存储。由此，可以提高数据可靠性并增加要存储在整个存储单元中的位数。

6. 发明授权

US07885108B2 Memory programming method 有权
标题翻译：内存编程方法
公开(公告)号：US07885108B2
公开(公告)日：2011-02-08
申请号：US12382176
申请日：2009-03-10
申请人： Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong
发明人： Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong
IPC分类号： G11C16/00
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/3418
摘要： A memory programming method may include identifying at least one of a plurality of memory cells with a threshold voltage to be changed based on a pattern of data to be programmed in the at least one of the plurality of memory cells, applying a program condition voltage to the at least one identified memory cell until the threshold voltage of the at least one identified memory cell is included in a first threshold voltage interval, to thereby adjust the threshold voltage of the at least one identified memory cell, and programming the data in the at least one identified memory cell with the adjusted threshold voltage.
摘要翻译：存储器编程方法可以包括基于要在所述多个存储器单元中的至少一个存储器单元中编程的数据的模式来改变要改变的阈值电压的多个存储器单元中的至少一个，将程序条件电压施加到所述至少一个所识别的存储器单元，直到所述至少一个所识别的存储单元的阈值电压被包括在第一阈值电压间隔内，从而调整所述至少一个识别的存储单元的阈值电压，并且对所述存储单元中的数据进行编程具有调整的阈值电压的至少一个识别的存储器单元。

7. 发明授权

US07821828B2 Memory device and memory device heat treatment method 失效
标题翻译：记忆体和记忆体热处理方法
公开(公告)号：US07821828B2
公开(公告)日：2010-10-26
申请号：US12219104
申请日：2008-07-16
申请人： Seung-Hwan Song , Jun Jin Kong , Jae Hong Kim , Young Hwan Lee , Dong Hyuk Chae , Tae Hun Kim , Kyoung Lae Cho
发明人： Seung-Hwan Song , Jun Jin Kong , Jae Hong Kim , Young Hwan Lee , Dong Hyuk Chae , Tae Hun Kim , Kyoung Lae Cho
IPC分类号： G11C16/04
CPC分类号： G11C16/3418 , G11C7/04 , G11C11/5621 , G11C16/3427 , G11C16/349 , G11C29/00
摘要： A memory device and a memory device heat treatment method are provided. The memory device may include: a non-volatile memory device; one or more heating devices configured to contact with the non-volatile memory device and heat the non-volatile memory device; and a controller configured to control an operation of the one or more heating devices based on operational information of the non-volatile memory device. Through this, it may be possible to improve an available period of the non-volatile memory device.
摘要翻译：提供了一种存储器件和存储器件热处理方法。存储器件可以包括：非易失性存储器件; 配置成与所述非易失性存储器件接触并加热所述非易失性存储器件的一个或多个加热器件; 以及控制器，被配置为基于所述非易失性存储器件的操作信息来控制所述一个或多个加热装置的操作。由此，可以改善非易失性存储器件的可用周期。

8. 发明申请

US20090285022A1 Memory programming method 有权
标题翻译：内存编程方法
公开(公告)号：US20090285022A1
公开(公告)日：2009-11-19
申请号：US12382176
申请日：2009-03-10
申请人： Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong
发明人： Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong
IPC分类号： G11C16/02 , G11C16/06
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/3418
摘要： A memory programming method may include identifying at least one of a plurality of memory cells with a threshold voltage to be changed based on a pattern of data to be programmed in the at least one of the plurality of memory cells, applying a program condition voltage to the at least one identified memory cell until the threshold voltage of the at least one identified memory cell is included in a first threshold voltage interval, to thereby adjust the threshold voltage of the at least one identified memory cell, and programming the data in the at least one identified memory cell with the adjusted threshold voltage.
摘要翻译：存储器编程方法可以包括基于要在所述多个存储器单元中的至少一个存储器单元中编程的数据的模式来改变要改变的阈值电压的多个存储器单元中的至少一个，将程序条件电压施加到所述至少一个所识别的存储器单元，直到所述至少一个所识别的存储单元的阈值电压被包括在第一阈值电压间隔内，从而调整所述至少一个识别的存储单元的阈值电压，并且对所述存储单元中的数据进行编程具有调整的阈值电压的至少一个识别的存储器单元。

9. 发明授权

US08239747B2 Nonvolatile memory devices that utilize error correction estimates to increase reliability of error detection and correction operations 有权
标题翻译：利用误差校正估计的非易失性存储器件增加错误检测和校正操作的可靠性
公开(公告)号：US08239747B2
公开(公告)日：2012-08-07
申请号：US12216744
申请日：2008-07-10
申请人： Kyoung Lae Cho , Jae Hong Kim , Yoon Dong Park , Jun Jin Kong , Dong Hyuk Chae
发明人： Kyoung Lae Cho , Jae Hong Kim , Yoon Dong Park , Jun Jin Kong , Dong Hyuk Chae
IPC分类号： G06F11/00
CPC分类号： G06F11/1072 , H03M13/09 , H03M13/15 , H03M13/1515 , H03M13/152
摘要： Example embodiments may provide a memory device and memory data reading method. The memory device according to example embodiments may include a multi-bit cell array, an error detector which may read a first data page from a memory page in the multi-bit cell array and may detect an error-bit of the first data page, and an estimator which may identify a multi-bit cell where the error-bit is stored and may estimate data stored in the identified multi-bit cell among data of a second data page. Therefore, the memory device and memory data reading method may have an effect of reducing an error when reading data stored in the multi-bit cell and monitoring a state of the multi-bit cell without additional overhead.
摘要翻译：示例性实施例可以提供存储器件和存储器数据读取方法。根据示例实施例的存储器件可以包括多位单元阵列，错误检测器，其可以从多位单元阵列中的存储器页读取第一数据页，并且可以检测第一数据页的错误位，以及估计器，其可以识别存储错误位的多位单元，并且可以估计存储在所识别的多位单元中的数据在第二数据页的数据中。因此，存储器件和存储器数据读取方法可以具有当读取存储在多位单元中的数据并且监视多位单元的状态而没有额外开销时减小误差的效果。

10. 发明授权

US07929346B2 Memory data detecting apparatus and method for controlling reference voltage based on error in stored data 有权
标题翻译：存储器数据检测装置和基于存储数据中的误差来控制参考电压的方法
公开(公告)号：US07929346B2
公开(公告)日：2011-04-19
申请号：US12216745
申请日：2008-07-10
申请人： Dong Hun Yu , Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong , Jae Hong Kim , Seung-Hwan Song
发明人： Dong Hun Yu , Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong , Jae Hong Kim , Seung-Hwan Song
IPC分类号： G11C16/06 , G11C16/34 , G11C16/26
CPC分类号： G11C7/1006 , G11C7/14 , G11C11/5642 , G11C29/00 , G11C29/028 , G11C29/42 , G11C29/50 , G11C2211/5634
摘要： Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.
摘要翻译：示例性实施例可以涉及用于读取存储在存储器中的数据的方法和装置，例如提供一种基于存储的数据的错误来控制参考电压的方法和装置。示例性实施例可以提供一种存储器数据检测装置，其包括用于将存储器单元的阈值电压与第一参考电压进行比较的第一电压比较器，第一数据确定器，用于根据存储器单元存储的至少一个数据位的值，根据比较结果，用于验证所确定的值是否发生错误验证器，基于验证结果确定低于第一参考电压的第二参考电压的参考电压确定器，以及第二数据确定器，以基于所确定的第二参考电压重新确定数据的值。

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