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1. 发明授权

US06916147B2 Substrate storage cassette with substrate alignment feature 失效
标题翻译：具有基板对准特征的基板存储盒
公开(公告)号：US06916147B2
公开(公告)日：2005-07-12
申请号：US10280451
申请日：2002-10-25
申请人： Dongchoon Suh , Wendell T. Blonigan , Rolf A. Guenther
发明人： Dongchoon Suh , Wendell T. Blonigan , Rolf A. Guenther
IPC分类号： H01L21/673 , H01L21/677 , B65B21/02 , B65B69/00 , B65G65/04 , B65G65/34
CPC分类号： H01L21/6732 , H01L21/67772 , Y10S414/136
摘要： A substrate storage cassette and a method of orienting a substrate disposed therein are provided. In one embodiment, the substrate storage cassette includes a plurality of flanges pairs disposed between a first lateral sidewall coupled in a spaced-apart relation to a second lateral sidewall. Each of the flange pairs adapted to support a substrate thereon. At least a first alignment feature disposed between the flange pair and adapted to mate with an orientation feature of the substrate when the substrate is in a predefined orientation.
摘要翻译：提供了基板存储盒和设置在其中的基板的定向方法。在一个实施例中，衬底存储盒包括多个凸缘对，其设置在以与第二侧壁侧壁间隔开的关系连接的第一侧壁之间。每个凸缘对适于在其上支撑基底。至少第一对准特征设置在所述凸缘对之间并且当所述基板处于预定义取向时适于与所述基板的取向特征配合。

2. 发明授权

US06902947B2 Integrated method for release and passivation of MEMS structures 失效
标题翻译： MEMS结构的释放和钝化的集成方法
公开(公告)号：US06902947B2
公开(公告)日：2005-06-07
申请号：US10435757
申请日：2003-05-09
申请人： Jeffrey D. Chinn , Rolf A. Guenther , Michael B. Rattner , James A. Cooper , Toi Yue Becky Leung , Claes H. Bjorkman
发明人： Jeffrey D. Chinn , Rolf A. Guenther , Michael B. Rattner , James A. Cooper , Toi Yue Becky Leung , Claes H. Bjorkman
IPC分类号： B81B3/00 , B81C1/00 , H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005 , B81C2201/0176 , B81C2201/112 , B82Y30/00
摘要： Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.
摘要翻译：本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。该方法包括用包含氧气和任选的氢气的源气体产生的等离子体处理MEMS结构的表面。处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。本文还公开了一种用于MEMS结构的释放和钝化的集成方法，其可以被调整为在单室处理系统或多室处理系统中进行。

3. 发明授权

US08065789B2 Method of fabricating a heated substrate support 失效
标题翻译：制造加热的衬底支架的方法
公开(公告)号：US08065789B2
公开(公告)日：2011-11-29
申请号：US12178228
申请日：2008-07-23
申请人： Rolf A. Guenther , Curtis B. Hammill
发明人： Rolf A. Guenther , Curtis B. Hammill
IPC分类号： H05B3/00
CPC分类号： C23C16/4586 , Y10T29/49083 , Y10T29/49162 , Y10T29/49194 , Y10T29/49915 , Y10T29/49925
摘要： A method of forming a substrate support comprises providing a body having a groove, inserting a heater element into the groove, disposing an insert into the groove, and inserting a cap into the groove. The heater element comprises a resistive element inside a sheath encased in a malleable cladding. The insert is disposed over the cladding, and the cap is substantially flush with an outer surface of the body.
摘要翻译：一种形成衬底支撑件的方法包括提供具有凹槽的本体，将加热器元件插入凹槽中，将插入件设置在凹槽中，以及将盖插入凹槽中。加热器元件包括位于可延展包层中的鞘内的电阻元件。插入件设置在包层上方，并且帽与主体的外表面基本齐平。

4. 发明申请

US20080271309A1 HEATED SUBSTRATE SUPPORT AND METHOD OF FABRICATING SAME 失效
标题翻译：加热基板支撑及其制造方法
公开(公告)号：US20080271309A1
公开(公告)日：2008-11-06
申请号：US12178228
申请日：2008-07-23
申请人： Rolf A. Guenther , Curtis B. Hammill
发明人： Rolf A. Guenther , Curtis B. Hammill
IPC分类号： H01R43/00 , H05B3/00
CPC分类号： C23C16/4586 , Y10T29/49083 , Y10T29/49162 , Y10T29/49194 , Y10T29/49915 , Y10T29/49925
摘要： A method and apparatus for forming a substrate support is provided herein. In one embodiment, the substrate support includes a body having a support surface and at least one groove. A heater element clad with a malleable heat sink is disposed in the groove. Substantially no air is trapped between the clad heater element and the groove. An insert is disposed in the groove above the heater. The insert substantially completely covers and contacts the clad heater element and the sides of the groove. A cap is disposed in the groove above the insert. The cap covers and contacts the insert and has an upper surface disposed substantially flush with the support surface.
摘要翻译：本文提供了一种用于形成衬底支撑件的方法和装置。在一个实施例中，衬底支撑件包括具有支撑表面的主体和至少一个凹槽。包含有韧性的散热器的加热元件设置在凹槽中。在包层加热器元件和槽之间基本上没有空气被捕获。插入件设置在加热器上方的凹槽中。插入件基本上完全覆盖并接触包层加热器元件和槽的侧面。盖子设置在插入件上方的凹槽中。帽覆盖并接触插入件，并且具有与支撑表面基本齐平设置的上表面。

5. 发明授权

US4701231A Method of forming a joint between a tubular composite and a metal ring 失效
标题翻译：在管状复合材料和金属环之间形成接头的方法
公开(公告)号：US4701231A
公开(公告)日：1987-10-20
申请号：US863484
申请日：1986-05-15
申请人： Stanley T. Peters , Robert L. Kolek , Rolf A. Guenther , Jeffrey J. Anderson , Clarence F. Marshall
发明人： Stanley T. Peters , Robert L. Kolek , Rolf A. Guenther , Jeffrey J. Anderson , Clarence F. Marshall
IPC分类号： C09J5/00 , B29C53/58 , B29C70/68 , B29C70/86 , B31C99/00 , F16C3/02 , F16C7/00 , F16D1/09 , B31C13/00 , F16D1/06
CPC分类号： F16C3/026 , B29C53/587 , B29C70/86 , Y10T403/74
摘要： A method of making a composite to metal joint between a metal ring and a tubular composite formed from crossing helical windings of high strength fibers including the steps of winding the fiber on a mandrel at a helical angle equal to or greater than the slip angle of the fiber and providing the metal ring with a surface in the form of a hyperboloid of one sheet and a pair of isotensoidal surfaces of revolution contiguous with the hyperboloidal surface to form a concave portion in the ring over which the helical fibers form straight lines without bridging and hug these concave surfaces to form an interference fit between the composite and the metal ring.
摘要翻译：在由高强度纤维的交叉螺旋绕组形成的金属环和管状复合材料之间制成金属接头的复合材料的方法，包括以等于或大于其的滑移角的螺旋角将纤维缠绕在心轴上的步骤为金属环提供一层双曲面形式的表面和与双曲面相邻的一对旋转等直面以在环中形成凹部，螺旋形纤维在该环上形成没有桥接的直线，拥抱这些凹面以在复合材料和金属环之间形成过渡配合。

6. 发明授权

US07674338B2 Heated substrate support and method of fabricating same 失效
标题翻译：加热衬底支架及其制造方法
公开(公告)号：US07674338B2
公开(公告)日：2010-03-09
申请号：US11115575
申请日：2005-04-26
申请人： Rolf A. Guenther , Curtis B. Hammill
发明人： Rolf A. Guenther , Curtis B. Hammill
IPC分类号： C23F1/00
CPC分类号： C23C16/4586 , Y10T29/49083 , Y10T29/49162 , Y10T29/49194 , Y10T29/49915 , Y10T29/49925
摘要： A method and apparatus for forming a substrate support is provided herein. In one embodiment, the substrate support includes a body having a support surface and at least one groove. A heater element surrounded with a malleable heat sink is disposed in the groove. The heat sink may be comprised of one or more parts. A cap is disposed in the groove above the heat sink and has an upper surface disposed substantially flush with the support surface.
摘要翻译：本文提供了一种用于形成衬底支撑件的方法和装置。在一个实施例中，衬底支撑件包括具有支撑表面的主体和至少一个凹槽。用可延展的散热器包围的加热器元件设置在凹槽中。散热器可以由一个或多个部件组成。盖子设置在散热器上方的凹槽中，并且具有与支撑表面基本齐平的上表面。

7. 发明授权

US07294208B2 Apparatus for providing gas to a processing chamber 有权
标题翻译：用于向处理室提供气体的装置
公开(公告)号：US07294208B2
公开(公告)日：2007-11-13
申请号：US11146311
申请日：2005-06-06
申请人： Rolf A. Guenther
发明人： Rolf A. Guenther
IPC分类号： C23C16/00 , F26B17/00
CPC分类号： C23C16/4481 , B01D7/00
摘要： A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a unitary, isolatable, transportable canister having a plurality of first spacing elements, a plurality of second spacing elements and a solid material disposed within the canister. The spacing elements have different mean diameters. The solid material is adapted to produce a gas vapor when exposed to a temperature above a predetermined level at a predetermined pressure. In another embodiment, an apparatus for generating gas includes a gas source coupled to a processing chamber by a first gas line. A canister is coupled in-line with the first gas line and contains a solid material that produces a process gas when heated. A heater is disposed between the gas source and the canister to heat gas flowing into the canister.
摘要翻译：提供了一种用于产生用于处理系统的气体的方法和装置。在一个实施例中，用于产生用于处理系统的气体的装置包括具有多个第一间隔元件，多个第二间隔元件和设置在所述罐内的固体材料的单一的可隔离的可移动的罐。间隔元件具有不同的平均直径。固体材料适于当以预定压力暴露于高于预定水平的温度时产生气体蒸气。在另一个实施例中，用于产生气体的装置包括通过第一气体管线连接到处理室的气体源。罐与第一气体管线连接在一起，并且包含在加热时产生工艺气体的固体材料。在气体源和罐之间设置加热器以加热流入罐中的气体。

8. 发明授权

US5978202A Electrostatic chuck having a thermal transfer regulator pad 失效
标题翻译：静电吸盘具有热转印调节垫
公开(公告)号：US5978202A
公开(公告)日：1999-11-02
申请号：US883994
申请日：1997-06-27
申请人： Ralph M. Wadensweiler , Ajay Kumar , Shashank C. Deshmukh , Weinan Jiang , Rolf A. Guenther
发明人： Ralph M. Wadensweiler , Ajay Kumar , Shashank C. Deshmukh , Weinan Jiang , Rolf A. Guenther
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck 75 for holding a substrate 25 in a process chamber 20, comprises an electrostatic member 80 including an insulator having an electrode 95 therein and a receiving surface for receiving the substrate. A base 85 supports the electrostatic member, the base having a first thermal resistance R.sub.B and having a lower surface that rests on the process chamber. A thermal transfer regulator pad 100 is positioned between the receiving surface of the electrostatic member and the lower surface of the base, the thermal pad comprising a second thermal resistance R.sub.P that is sufficiently higher or lower than the thermal resistance R.sub.B of the base, to provide a predetermined temperature profile across a processing surface of the substrate during processing in the chamber.
摘要翻译：用于将基板25保持在处理室20中的静电卡盘75包括静电构件80，静电构件80包括其中具有电极95的绝缘体和用于接收基板的接收表面。基座85支撑静电部件，底座具有第一热阻RB并且具有搁置在处理室上的下表面。热传递调节器垫100定位在静电部件的接收表面和基部的下表面之间，热垫包括足够高于或低于基部的热阻RB的第二热阻RP，以提供在腔室中处理期间在衬底的处理表面上的预定温度分布。

9. 发明授权

US06915592B2 Method and apparatus for generating gas to a processing chamber 失效
标题翻译：用于向处理室产生气体的方法和装置
公开(公告)号：US06915592B2
公开(公告)日：2005-07-12
申请号：US10208305
申请日：2002-07-29
申请人： Rolf A. Guenther
发明人： Rolf A. Guenther
IPC分类号： B01D7/00 , C23C16/448 , F26B25/00 , C23C16/00
CPC分类号： C23C16/4481 , B01D7/00
摘要： A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes an unitary, isolatable, transportable canister having a plurality of first spacing elements, a plurality of second spacing elements and a solid material disposed within the canister. The spacing elements have different mean diameters. The solid material is adapted to produce a gas vapor when exposed to a temperature above a predetermined level at a predetermined pressure. In another embodiment, an apparatus for generating gas includes a gas source coupled to a processing chamber by a first gas line. A canister is coupled in-line with the first gas line and contains a solid material that produces a process gas when heated. A heater is disposed between the gas source and the canister to heat gas flowing into the canister.
摘要翻译：提供了一种用于产生用于处理系统的气体的方法和装置。在一个实施例中，用于产生用于处理系统的气体的装置包括具有多个第一间隔元件，多个第二间隔元件和设置在所述罐内的固体材料的整体的可隔离的可移动的罐。间隔元件具有不同的平均直径。固体材料适于当以预定压力暴露于高于预定水平的温度时产生气体蒸气。在另一个实施例中，用于产生气体的装置包括通过第一气体管线连接到处理室的气体源。罐与第一气体管线连接在一起，并且包含在加热时产生工艺气体的固体材料。在气体源和罐之间设置加热器以加热流入罐中的气体。

10. 发明授权

US06900133B2 Method of etching variable depth features in a crystalline substrate 失效
标题翻译：在晶体衬底中蚀刻可变深度特征的方法
公开(公告)号：US06900133B2
公开(公告)日：2005-05-31
申请号：US10247467
申请日：2002-09-18
申请人： Jeffrey D. Chinn , Michael B. Rattner , James A. Cooper , Rolf A. Guenther
发明人： Jeffrey D. Chinn , Michael B. Rattner , James A. Cooper , Rolf A. Guenther
IPC分类号： B81C1/00 , H01L21/3065 , H01L21/308 , H01L21/302
CPC分类号： B81C1/00626 , B81B2201/0214 , B81B2201/058 , B81C99/009 , B81C2201/0132 , H01L21/3065 , H01L21/3081
摘要： Disclosed herein is an easy and well-integrated method of etching features to different depths in a crystalline substrate, such as a single-crystal silicon substrate. The method utilizes a specialized masking process and takes advantage of a highly selective etch process. The method provides a system of interconnected, variable depth reservoirs and channels. The plasma used to etch the channels may be designed to provide a sidewall roughness of about 200 nm or less. The resulting structure can be used in various MEMS applications, including biomedical MEMS and MEMS for semiconductor applications.
摘要翻译：本文公开了一种在晶体衬底（例如单晶硅衬底）中对不同深度蚀刻特征的易于且良好集成的方法。该方法利用专门的掩蔽过程并利用高选择性蚀刻工艺。该方法提供了一个互连的，可变深度的储层和通道的系统。用于蚀刻通道的等离子体可以设计成提供约200nm或更小的侧壁粗糙度。所得结构可用于各种MEMS应用，包括用于半导体应用的生物医学MEMS和MEMS。

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