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1. 发明申请

US20150003152A1 STORAGE DEVICE AND A WRITE METHOD THEREOF 有权
标题翻译：存储设备及其写入方法
公开(公告)号：US20150003152A1
公开(公告)日：2015-01-01
申请号：US14188889
申请日：2014-02-25
申请人： DongHun KWAK , Dongkyo SHIM , KITAE PARK , Hyun-Wook PARK
发明人： DongHun KWAK , Dongkyo SHIM , KITAE PARK , Hyun-Wook PARK
IPC分类号： G11C16/12
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/3459 , G11C16/349 , G11C16/3495
摘要： A write method of a storage device includes determining whether to perform a coarse program operation based on information about memory cells of a memory device, in response to a determination that the coarse program operation is to be performed, programming data in the memory device by performing the coarse program operation and a fine program operation, and in response to a determination that the coarse program operation is not to be performed, programming data in the memory device by performing the fine program operation.
摘要翻译：存储装置的写入方法包括响应于要执行粗略编程操作的确定，基于关于存储器件的存储器单元的信息来确定是否执行粗略的程序操作，通过执行存储器件中的程序数据粗程序操作和精细程序操作，并且响应于不执行粗程序操作的确定，通过执行精细程序操作来在存储器件中编程数据。

2. 发明申请

US20150078098A1 NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF 审中-公开
标题翻译：非易失性存储器件及其程序方法
公开(公告)号：US20150078098A1
公开(公告)日：2015-03-19
申请号：US14302087
申请日：2014-06-11
申请人： DongHun KWAK , Kitae PARK
发明人： DongHun KWAK , Kitae PARK
IPC分类号： G11C16/10
CPC分类号： G11C16/24 , G11C16/0466 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/3418 , G11C16/3422 , G11C16/3427 , G11C16/3431
摘要： According to example embodiments of inventive concepts, a nonvolatile memory device includes at least two strings that are vertically stacked on a substrate and share one bit line. A program method of the nonvolatile memory device includes setting a pre-charge condition on the basis of a disturb environment between the at least two cell strings, pre-charging or not pre-charging an unselected cell string among the at least two cell strings in response to the pre-charge condition and programming memory cells in a selected cell string among the at least two cell strings.
摘要翻译：根据发明构思的示例性实施例，非易失性存储器件包括垂直堆叠在衬底上并且共享一个位线的至少两个串。非易失性存储装置的编程方法包括基于至少两个单元串之间的干扰环境来设置预充电状态，对至少两个单元串之间的未选择的单元串进行预充电或不预充电对所述预充电状态的响应以及在所述至少两个单元串中的所选单元串中编程存储器单元。

3. 发明申请

US20160099068A1 NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF 审中-公开
公开(公告)号：US20160099068A1
公开(公告)日：2016-04-07
申请号：US14965293
申请日：2015-12-10
申请人： DongHun KWAK , Kitae PARK
发明人： DongHun KWAK , Kitae PARK
IPC分类号： G11C16/24 , G11C16/34 , G11C16/14 , G11C16/04 , G11C16/08
CPC分类号： G11C16/24 , G11C16/0466 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/3418 , G11C16/3422 , G11C16/3427 , G11C16/3431
摘要： According to example embodiments of inventive concepts, a nonvolatile memory device includes at least two strings that are vertically stacked on a substrate and share one bit line. A program method of the nonvolatile memory device includes setting a pre-charge condition on the basis of a disturb environment between the at least two cell strings, pre-charging or not pre-charging an unselected cell string among the at least two cell strings in response to the pre-charge condition and programming memory cells in a selected cell string among the at least two cell strings.

4. 发明申请

US20130094294A1 NONVOLATILE MEMORY DEVICE, PROGRAMMING METHOD OF NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE 有权
公开(公告)号：US20130094294A1
公开(公告)日：2013-04-18
申请号：US13648290
申请日：2012-10-10
申请人： DongHun KWAK , Sang-Won PARK , Won-Taeck JUNG
发明人： DongHun KWAK , Sang-Won PARK , Won-Taeck JUNG
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/08 , G11C16/26 , G11C16/3459 , H01L27/1157 , H01L27/11582
摘要： Disclosed are a program method and a nonvolatile memory device. The method includes receiving program data to be programmed in memory cells; reading the memory cells to judge an erase state and at least one program state; performing a state read operation in which the at least one program state is read using a plurality of state read voltages; and programming the program data in the memory cells using a plurality of verification voltages having different levels according to a result of the state read operation. Also disclosed are methods using a plurality of verification voltages selected based on factors which may affect a threshold voltage shift or other characteristic representing the data of a memory cell after programming.

5. 发明申请

US20160012897A1 NONVOLATILE MEMORY DEVICE, A STORAGE DEVICE HAVING THE SAME AND AN OPERATING METHOD OF THE SAME 有权
标题翻译：非易失性存储器件，具有该存储器件的存储器件及其操作方法
公开(公告)号：US20160012897A1
公开(公告)日：2016-01-14
申请号：US14792678
申请日：2015-07-07
申请人： DongHun KWAK
发明人： DongHun KWAK
IPC分类号： G11C16/10 , G11C16/26 , G11C16/04
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/26 , H01L27/11582
摘要： An operating method of a nonvolatile memory device including a plurality of strings each string including at least two pillars penetrating wordlines disposed at different layers. The operating method includes applying unselected wordline voltages to unselected wordlines, and applying a selected wordline voltage to a selected wordline, and the unselected wordline voltage applied to the same layer as a layer of the selected wordline is different from the unselected wordline voltage applied to a different layer than the layer of the selected wordline.
摘要翻译：一种非易失性存储装置的操作方法，包括多个串，每个串包括穿过设置在不同层的字线的至少两个支柱。操作方法包括将未选择的字线电压施加到未选择的字线，以及将所选择的字线电压施加到所选择的字线，并且施加到与所选字线的层相同的层的未选择的字线电压与施加到所选择的字线的未选择的字线电压不同不同于所选字母层的层。

6. 发明申请

US20130262751A1 NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM, AND PROGRAM METHOD THREOF 有权
标题翻译：非易失性存储器件，存储器系统和程序方法
公开(公告)号：US20130262751A1
公开(公告)日：2013-10-03
申请号：US13685772
申请日：2012-11-27
申请人： DongHun KWAK
发明人： DongHun KWAK
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F11/076 , G11C16/0483 , G11C16/3454 , G11C16/349 , G11C16/3495 , H01L27/11578
摘要： Disclosed is a method for programming a nonvolatile memory device, the nonvolatile memory device including cell strings formed in a direction perpendicular to a substrate, and which selects memory cells by a string selection line unit. The programming method includes detecting wear leveling information of a selected memory block, determining a selection sequence of string selection lines of the selected memory block according to the wear leveling information, and writing data at the selected memory block according to the determined selection sequence.
摘要翻译：公开了一种非易失性存储器件的编程方法，所述非易失性存储器件包括在垂直于衬底的方向上形成的单元串，并且通过串选择线单元选择存储单元。编程方法包括检测所选择的存储块的损耗均衡信息，根据所述损耗均衡信息确定所选择的存储块的字符串选择行的选择序列，以及根据确定的选择序列在所选存储块处写入数据。

7. 发明申请

US20150332773A1 THREE-DIMENSIONAL MEMORY DEVICE AND OPERATING METHOD OF A STORAGE DEVICE INCLUDING THE SAME 有权
标题翻译：三维存储器件及包括其的存储器件的操作方法
公开(公告)号：US20150332773A1
公开(公告)日：2015-11-19
申请号：US14592459
申请日：2015-01-08
申请人： DongHun KWAK
发明人： DongHun KWAK
IPC分类号： G11C16/14 , G11C16/34 , G11C16/26 , G11C16/04 , G11C16/08
CPC分类号： G11C16/14 , G11C7/14 , G11C7/227 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/26 , G11C16/3427 , G11C16/3445 , G11C16/349 , H01L27/115 , H01L27/11582
摘要： A storage device is provided. The storage device includes a memory controller and at least one nonvolatile memory device including memory blocks having a pipe-shaped bit cost scalable (PBiCS) structure. Each of the memory blocks penetrates word lines stacked on a substrate in the form of plates and includes a first pillar, a second pillar, and a back-gate. The second pillar includes a semiconductor layer, an insulating layer, and a charge storage layer. The back-gate includes a pillar connection portion to connect the first and second pillars to each other and is disposed between the substrate and the word lines. The memory controller includes an adjacent cell management unit configured to control the at least one nonvolatile memory device such that a program operation, an erase operation or a read operation is performed on memory cells adjacent to the back-gate, unlike the other memory cells.
摘要翻译：提供存储设备。存储装置包括存储器控制器和包括具有管状位成本可缩放（PBiCS）结构的存储器块的至少一个非易失性存储器件。每个存储块以板的形式渗透堆叠在基板上的字线，并且包括第一柱，第二柱和后栅。第二柱包括半导体层，绝缘层和电荷存储层。背栅极包括将第一和第二柱彼此连接并设置在基板和字线之间的柱连接部分。存储器控制器包括相邻的单元管理单元，其被配置为控制至少一个非易失性存储器件，使得与其他存储单元不同，对与后门相邻的存储器单元执行编程操作，擦除操作或读取操作。

8. 发明申请

US20130223147A1 NONVOLATILE MEMORY DEVICE AND MEMORY MANAGEMENT METHOD THEREOF 有权
标题翻译：非易失性存储器件及其存储器管理方法
公开(公告)号：US20130223147A1
公开(公告)日：2013-08-29
申请号：US13686906
申请日：2012-11-27
申请人： DongHun KWAK
发明人： DongHun KWAK
IPC分类号： G11C16/10 , G11C16/16
CPC分类号： G11C16/107 , G11C16/0483 , G11C16/105 , G11C16/16 , G11C16/3427 , H01L27/11582
摘要： Embodiments include a memory managing method of a nonvolatile memory device, which includes detecting whether sub-blocks of memory blocks are programmed, and programming write data at a memory block having a programmed sub-block from among the memory blocks, prior to programming a memory block having no programmed sub-blocks from among the memory blocks, according to the detection result. Embodiments also include programming the write data at a sub-block, closest to a common source line, from among unprogrammed sub-blocks of the memory block. Embodiments also include erasing at least one sub-block that is farthest from the common source line, prior to erasing other sub-blocks from among the programmed sub-blocks in the memory block. Embodiments also include selectively programming or erasing sub-blocks according to read merge times.
摘要翻译：实施例包括非易失性存储器件的存储器管理方法，其包括检测存储器块的子块是否被编程，以及在编程存储器之前，在存储块中具有编程子块的存储器块中编程写入数据根据检测结果，存储块中没有编程子块的块。实施例还包括从位于存储器块的未编程子块中的最靠近公共源极线的子块编程写入数据。实施例还包括在从存储器块中的编程子块中擦除其它子块之前擦除与公共源线最远的至少一个子块。实施例还包括根据读取的合并时间选择性地编程或擦除子块。

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