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1. 发明专利

AU6116494A Height adjustment apparatus of golf tee 未知
公开(公告)号：AU6116494A
公开(公告)日：1994-09-26
申请号：AU6116494
申请日：1994-03-04
申请人： SANG WON PARK
发明人： PARK SANG WON
IPC分类号： A63B69/36
摘要： This invention relates to a height adjustment apparatus for a golf tee capable of arbitrarily adjusting the height of a tee by forward/reverse revolution of a motor, in order to adjust in accordance with the height and posture of a golfer the height of a tee for supporting a golf ball at a portion lower than its correct position when practising a golf in a golf practice field. In order to eliminate the problems with the prior art in that the adjustment of a tee height is extremely troublesome and the height adjustment of a golf ball is difficult during automatic feed of a golf ball, the present invention provides a screw rod rotated by a reversible motor on upper and lower support beds, connects a nut member with the screw rod, and interconnects a support bed for a golf ball feeder moved up and down by an elevation table capable of elevating with a vertical elevation mechanism of a tee so that they can simultaneously move up and down. In this way, the present invention can make mechanical and simultaneous control of a tee height without replacing one tee with different ones.

2. 发明授权

US09670540B2 Methods and devices for DNA sequencing and molecular diagnostics 有权
公开(公告)号：US09670540B2
公开(公告)日：2017-06-06
申请号：US14234011
申请日：2012-07-23
申请人： Francis A. Barany , Steven A. Soper , George Grills , Yu-wei Cheng , Jianmin Huang , Hong Wang , Malgorzata A. Witek , Daniel Sang-won Park , Michael C. Murphy , Robin Lindsey McCarley , Mateusz L. Hupert
发明人： Francis A. Barany , Steven A. Soper , George Grills , Yu-wei Cheng , Jianmin Huang , Hong Wang , Malgorzata A. Witek , Daniel Sang-won Park , Michael C. Murphy , Robin Lindsey McCarley , Mateusz L. Hupert
IPC分类号： C12Q1/68 , G01N33/58 , C07H21/04
CPC分类号： C12Q1/6874 , C12Q1/6806 , G01N33/585 , C12Q2525/197 , C12Q2525/313 , C12Q2535/122 , C12Q2563/131 , C12Q2565/543
摘要： The present invention is directed to methods for capturing, amplifying and identifying one or more of a plurality of target nucleotide sequences in a sample. The present invention is further directed to a device comprising a solid support having a plurality of wells or pillars and a plurality of oligonucleotides attached to the wells or pillars. Other aspects of the invention are directed to methods of making such devices.

3. 发明申请

US20150179501A1 TECHNIQUES FOR TRENCH ISOLATION USING FLOWABLE DIELECTRIC MATERIALS 有权
标题翻译：使用流动介电材料进行热分解的技术
公开(公告)号：US20150179501A1
公开(公告)日：2015-06-25
申请号：US14139964
申请日：2013-12-24
申请人： Ritesh Jhaveri , Jeanne L. Luce , Sang-Won Park , Dennis G. Hanken
发明人： Ritesh Jhaveri , Jeanne L. Luce , Sang-Won Park , Dennis G. Hanken
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/02219 , H01L21/02222 , H01L21/02274 , H01L21/02323 , H01L21/02326 , H01L21/02337 , H01L21/02343 , H01L21/02345 , H01L21/823431 , H01L27/0924 , H01L29/0649 , H01L29/66795 , H01L29/785
摘要： Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids. After curing, the resultant dielectric layer can undergo wet chemical, thermal, and/or plasma treatment, for instance, to modify at least one of its dielectric properties, density, and/or etch rate.
摘要翻译：公开了用于使用可流动介电材料提供半导体翅片的沟槽隔离的技术。根据一些实施例，可流动电介质可以例如使用可流动的化学气相沉积（FCVD）工艺沉积在鳍状图案化的半导体衬底上。可流动电介质可以流入相邻散热片之间的沟槽，其中它可以原位固化，从而根据一些实施例在衬底上形成电介质层。通过固化，可以根据给定目标应用或最终用途的需要将可流动电介质转化为例如氧化物，氮化物和/或碳化物。在一些实施例中，所得到的电介质层可以是基本上无缺陷的，没有或以其他方式减少接缝/空隙的量。在固化之后，所得到的介电层可进行湿化学，热和/或等离子体处理，例如改变其介电特性，密度和/或蚀刻速率中的至少一个。

4. 发明申请

US20150049548A1 Read Methods for Non-Volatile Memory Devices and Related Non-Volatile Memory Devices 审中-公开
标题翻译：非易失性存储器件和相关非易失性存储器件的读取方法
公开(公告)号：US20150049548A1
公开(公告)日：2015-02-19
申请号：US14459426
申请日：2014-08-14
申请人： Sang-Won Park , Dong-Hun Kwak
发明人： Sang-Won Park , Dong-Hun Kwak
IPC分类号： G11C16/26 , G11C16/34
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/3427 , G11C16/349
摘要： Read methods for a non-volatile memory device are provided. The read method includes sensing memory cells in an Nth program state using original read voltages of an Nth level, where N is a natural number greater than 2, counting the number of memory cells in the Nth program state according to the sensing result, and when the number of memory cells in the Nth program state is greater than a reference number, sensing memory cells in first to Nth program states using adjusted read voltages of first to Nth levels. The adjusted read voltages are obtained by adding offset voltages to the original read voltages.
摘要翻译：提供了非易失性存储器件的读取方法。读取方法包括使用第N级的原始读取电压来感测存储单元，其中N是大于2的自然数，根据感测结果对第N个编程状态中的存储单元的数量进行计数，以及何时在第N程序状态下的存储单元的数量大于参考数，使用第一至第N级的调整的读取电压，以第一至第N程序状态感测存储单元。通过将偏移电压加到原始读取电压上来获得经调整的读取电压。

5. 外观设计

USD679509S1 Hair brush head 有权
标题翻译：头发刷头
公开(公告)号：USD679509S1
公开(公告)日：2013-04-09
申请号：US29366676
申请日：2010-07-28
申请人： Sang Won Park
设计人： Sang Won Park

6. 发明授权

US06692680B2 Reproduction of micromold inserts 失效
标题翻译：复制微胶片插入物
公开(公告)号：US06692680B2
公开(公告)日：2004-02-17
申请号：US09970246
申请日：2001-10-03
申请人： Jeong-Bong Lee , Harish Manohara , Kabseog Kim , Sang-Won Park
发明人： Jeong-Bong Lee , Harish Manohara , Kabseog Kim , Sang-Won Park
IPC分类号： B29C3338
CPC分类号： B81C99/0085 , B29C33/3842 , B29C33/3857 , B29C33/424 , B81C2201/0109
摘要： Methods of rapidly prototyping microstructures such as HARMs are disclosed. A high precision process uses polymeric microstructure replication techniques and sacrificial layer etching techniques to mass produce high aspect ratio metallic and polymer micromold inserts. In one embodiment, after fabrication of an initial micromold insert, high aspect ratio replications are created by casting replication material, such as PDMS, directly onto the initial micromold insert. The replicated HARM is coated with a sacrificial layer and then electroplated to replicate another set of micromold inserts. After the electroplating process is completed, the sacrificial layer is etched away to release the replicated micromold inserts.
摘要翻译：公开了快速成型微结构如HARM的方法。高精度工艺使用聚合物微结构复制技术和牺牲层蚀刻技术来大量生产高纵横比金属和聚合物微胶条插入物。在一个实施例中，在制造初始微胶片插入物之后，通过将复制材料（例如PDMS）直接注射到初始微胶片插入件上来产生高纵横比重复。复制的HARM涂覆有牺牲层，然后电镀以复制另一组微胶片插入物。电镀工艺完成后，蚀刻掉牺牲层以释放复制的微胶片插入物。

7. 发明申请

US20210147647A1 SUPERHYDROPHOBIC FILMS 有权
公开(公告)号：US20210147647A1
公开(公告)日：2021-05-20
申请号：US17097620
申请日：2020-11-13
申请人： Xiaoxiao Zhao , Daniel Sang-won Park , Michael Charles Murphy
发明人： Xiaoxiao Zhao , Daniel Sang-won Park , Michael Charles Murphy
IPC分类号： C08J7/04 , C09D7/40 , C09D7/62 , C08K3/36 , C08K5/54 , C08K9/06 , C08L33/12 , C08L69/00 , C08J7/056
摘要： Methods of preparing surfaces are disclosed relating to polymeric substrates that include the use of nano-scale silica particles, solvents and oligomers. Resulting surface preparations on those polymeric substrates may take the form of resilient superhydrophobic coatings having high optical transmittance.

8. 发明授权

US09431062B2 Nonvolatile memory device and method of driving word line of the nonvolatile memory 有权
标题翻译：非易失性存储器件和驱动非易失性存储器字线的方法
公开(公告)号：US09431062B2
公开(公告)日：2016-08-30
申请号：US14567652
申请日：2014-12-11
申请人： Sang-Won Park , Kitae Park , Sang-Won Shim
发明人： Sang-Won Park , Kitae Park , Sang-Won Shim
IPC分类号： G11C16/26 , G11C16/10 , G11C16/08 , G11C16/30 , G11C16/32 , G11C5/02 , G11C8/08 , G11C7/04 , G11C11/56 , G11C16/04
CPC分类号： G11C8/08 , G11C5/02 , G11C7/04 , G11C8/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/30 , G11C16/32
摘要： A word line driving method is for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings which is formed in a direction perpendicular to a substrate and connected between bit lines and a common source line. The method includes applying an offset pulse to a word line for a predetermined time to shorten a word line setting time, and applying a target pulse having a level which is higher or lower than a level of the offset pulse to the word line after the predetermined time.
摘要翻译：字线驱动方法是用于非易失性存储器件，其包括具有多个串的多个存储块，所述多个存储块形成在与衬底垂直的方向上并连接在位线和公共源极线之间。该方法包括将偏移脉冲施加到字线预定时间以缩短字线设置时间，并且在预定的时间之后将具有高于或低于偏移脉冲的电平的电平的目标脉冲施加到字线时间。

9. 发明授权

US09324440B2 Nonvolatile memory devices, operating methods thereof and memory systems including the same 有权
标题翻译：非易失性存储器件，其操作方法和包括其的存储器系统
公开(公告)号：US09324440B2
公开(公告)日：2016-04-26
申请号：US14631341
申请日：2015-02-25
申请人： Sang-Won Park , Dongku Kang , Jung-Yun Yun , Jinman Han , ChiWeon Yoon
发明人： Sang-Won Park , Dongku Kang , Jung-Yun Yun , Jinman Han , ChiWeon Yoon
IPC分类号： G11C16/16 , G11C16/14 , G11C16/04 , G11C16/34
CPC分类号： G11C16/14 , G11C16/0483 , G11C16/16 , G11C16/3445 , H01L27/11582
摘要： The inventive concept relates to a nonvolatile memory device and methods for operating the same. The nonvolatile memory device comprises a plurality of strings arranged in rows and columns on a substrate, each string including at least one ground select transistor, a plurality of memory cells and at least one string select transistor sequentially stacked on the substrate. The method comprises erasing first memory cells corresponding to an erasure failed row and inhibiting erasure of second memory cells corresponding to an erasure passed row, and performing an erasure verification by a unit of each row with respect to the first memory cells.
摘要翻译：本发明构思涉及非易失性存储器件及其操作方法。非易失性存储器件包括在衬底上以行和列布置的多个串，每个串包括至少一个接地选择晶体管，多个存储器单元和顺序堆叠在衬底上的至少一个串选择晶体管。该方法包括：擦除对应于擦除失败行的第一存储单元，并禁止对与擦除通过的行相对应的第二存储单元的擦除，并以相对于第一存储单元的每行为单位进行擦除验证。

10. 发明授权

US09322047B2 Methods of and devices for capturing circulating tumor cells 有权
标题翻译：捕获循环肿瘤细胞的方法和装置
公开(公告)号：US09322047B2
公开(公告)日：2016-04-26
申请号：US13656295
申请日：2012-10-19
申请人： Taehyun Park , Daniel Sang-Won Park , Sudheer D Rani , Michael C Murphy , Dimitris E Nikitopoulos
发明人： Taehyun Park , Daniel Sang-Won Park , Sudheer D Rani , Michael C Murphy , Dimitris E Nikitopoulos
IPC分类号： B01L3/00 , C12Q1/24 , G01N33/569 , G01N33/574
CPC分类号： B01L3/502761 , B01L3/502753 , B01L2200/0668 , B01L2300/0816 , B01L2300/0858 , B01L2400/0487 , C12M47/04 , C12Q1/24 , G01N33/56966 , G01N33/574
摘要： A device and methods are provided for efficient and quick capture of target cells through a main microchannel having capture elements immobilized thereon and manipulating a velocity profile of a sample as it passes through the main microchannel. The cell capture device may have a main microchannel with a depth slightly larger than the diameter of the target cells and a plurality of side microchannels. The side microchannels may have a depth smaller than the diameter of the target cells. The device and methods may be used for early cancer detection.
摘要翻译：提供了一种装置和方法，用于通过具有固定在其上的捕获元件的主微通道有效且快速地捕获靶细胞，并且当样品通过主微通道时操纵样品的速度分布。细胞捕获装置可以具有深度略大于靶细胞的直径的主微通道和多个侧微通道。侧面微通道的深度可以小于靶细胞的直径。该装置和方法可用于早期癌症检测。

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