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    • 1. 发明授权
    • Thin film transistor display panel
    • 薄膜晶体管显示面板
    • US08350795B2
    • 2013-01-08
    • US12621415
    • 2009-11-18
    • Dong-Gyu KimHyun-Ho Kang
    • Dong-Gyu KimHyun-Ho Kang
    • G09G3/36
    • G02F1/136286H01L27/12H01L27/124H01L27/13
    • A thin-film transistor display panel according to one or more embodiments is provided. According to an embodiment, a thin-film transistor display panel includes an insulation substrate, a gate line that is formed on the insulation substrate and is extended in a first direction, a first data line and a second data line that cross with the first gate line, and are respectively extended side by side in a second direction, a first switching element that is electrically connected to the gate line and the first data line, a second switching element that is electrically connected to the gate line and the second data line, a first pixel electrode that is connected to the first switching element, and is at least partly overlapped with the gate line of the front end, a second pixel electrode that is connected to the second switching element, and is arranged with the first pixel electrode side by side, and a storage line that is at least partly overlapped with the first pixel electrode and the second pixel electrode by being formed with the gate line side by side and being formed at both sides of the first pixel electrode and the second pixel electrode.
    • 提供了根据一个或多个实施例的薄膜晶体管显示面板。 根据实施例,薄膜晶体管显示面板包括绝缘基板,形成在绝缘基板上并沿第一方向延伸的栅极线,与第一栅极交叉的第一数据线和第二数据线 并且分别在第二方向上并排地延伸,电连接到栅极线和第一数据线的第一开关元件,电连接到栅极线和第二数据线的第二开关元件, 与第一开关元件连接并且与前端的栅极线至少部分重叠的第一像素电极,与第二开关元件连接的第二像素电极,并且配置有第一像素电极侧 以及与第一像素电极和第二像素电极至少部分重叠的存储线,并排地形成有栅极线,并形成为 t第一像素电极和第二像素电极的两侧。
    • 4. 发明授权
    • Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same
    • 非晶硅薄膜晶体管 - 液晶显示装置及其制造方法
    • US08619207B2
    • 2013-12-31
    • US12108337
    • 2008-04-23
    • Dong-Gyu Kim
    • Dong-Gyu Kim
    • G02F1/136G02F1/1345
    • G02F1/13454G02F1/13439G02F1/13458G02F1/136227G02F1/1368G02F2001/136295G02F2201/123G02F2201/50G02F2202/103G09G3/3677G09G2300/0408G11C19/28H01L27/1222H01L27/124H01L27/1248H01L29/66765H01L29/78669
    • In an amorphous silicon thin film transistor-liquid crystal display device and a method of manufacturing the same, gate patterns including a gate line and a gate electrode are formed on an insulation substrate having a display region and a driving circuit region on which a plurality of shift resistors are formed. A gate insulating film, active layer patterns and data patterns including source/drain electrodes are formed successively on the substrate. A passivation layer on the substrate has a first contact hole exposing a drain electrode of the display region and second and third contact holes respectively exposing a gate electrode and source/drain electrode of a first transistor of each of the shift resistors. Electrode patterns on the passivation layer include a first electrode connected to the drain electrode of the display region through the first contact hole and a second electrode connecting the gate electrode to the source/drain electrode of the first transistor through the second and third contact holes. The gate driving circuit including the shift resistors and the wirings are integrated on the insulating substrate without an additional process, thereby simplifying the manufacturing process.
    • 在非晶硅薄膜晶体管 - 液晶显示装置及其制造方法中,包括栅极线和栅电极的栅极图案形成在具有显示区域和驱动电路区域的绝缘基板上,多个 形成移位电阻。 在基板上依次形成栅极绝缘膜,有源层图案和包括源极/漏极的数据图案。 衬底上的钝化层具有暴露显示区域的漏电极的第一接触孔和分别暴露每个移位电阻器的第一晶体管的栅电极和源/漏电极的第二和第三接触孔。 钝化层上的电极图案包括通过第一接触孔连接到显示区域的漏电极的第一电极和通过第二和第三接触孔将栅电极连接到第一晶体管的源极/漏电极的第二电极。 包括移动电阻器和布线的栅极驱动电路集成在绝缘基板上,而不需要额外的工艺,从而简化了制造工艺。