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1. 发明授权

US08637840B2 EUV projection lens and optic system having the same 有权
标题翻译： EUV投影透镜和具有相同的光学系统
公开(公告)号：US08637840B2
公开(公告)日：2014-01-28
申请号：US12805003
申请日：2010-07-07
申请人： Dong-Gun Lee , Seong-Sue Kim , Hwan-Seok Seo
发明人： Dong-Gun Lee , Seong-Sue Kim , Hwan-Seok Seo
IPC分类号： G02B5/18
CPC分类号： G21K1/06 , G02B5/1838 , G02B5/1842 , G02B5/1871 , G02B27/4222 , G21K2201/067
摘要： An EUV projection lens includes a substrate and concentric diffraction patterns on the substrate. The concentric diffraction patterns have an out-of phase height with respect to EUV light and include a material through which the EUV light has a transmittance higher than about 50% at the out-of phase height. The EUV projection lens has a high first order diffraction light efficiency and an optic system having the EUV projection lens has a high resolution.
摘要翻译： EUV投影透镜包括基板和基板上的同心衍射图案。同心衍射图案相对于EUV光具有异相高度，并且包括在异相高度下EUV光透过率高于约50％的材料。 EUV投影透镜具有高的一阶衍射光效率，并且具有EUV投影透镜的光学系统具有高分辨率。

2. 发明申请

US20100216062A1 Reflective photomask and method of fabricating, reflective illumination system and method of process using the same 失效
标题翻译：反光光掩模及其制造方法，反光照明系统及其使用方法
公开(公告)号：US20100216062A1
公开(公告)日：2010-08-26
申请号：US12656668
申请日：2010-02-12
申请人： Dong-Gun Lee , Seong-Sue Kim , Hwan-Seok Seo , In-Sung Kim
发明人： Dong-Gun Lee , Seong-Sue Kim , Hwan-Seok Seo , In-Sung Kim
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/26
摘要： A reflective photomask includes a phase shift object on a substrate, a reflective layer stacked on the substrate and the phase shift object, a capping layer on the reflective layer, the capping layer including at least one surface portion having a bent shape, and a light absorption pattern on the capping layer, the light absorption pattern including at least one slit exposing the surface portion of the capping layer having the bent shape.
摘要翻译：反射光掩模包括在基板上的相移物体，层叠在基板上的反射层和相移物体，反射层上的覆盖层，封盖层包括至少一个具有弯曲形状的表面部分，以及光吸收图案包括使具有弯曲形状的覆盖层的表面部分露出的至少一个狭缝。

3. 发明授权

US09025624B2 Beam generator 有权
标题翻译：梁发电机
公开(公告)号：US09025624B2
公开(公告)日：2015-05-05
申请号：US13545733
申请日：2012-07-10
申请人： Dong-Gun Lee , Seong-Sue Kim , Hwan-Seok Seo
发明人： Dong-Gun Lee , Seong-Sue Kim , Hwan-Seok Seo
IPC分类号： H01S3/30 , H01S3/02 , G03F7/20 , G03F1/84
CPC分类号： G03F7/70025 , G03F1/84 , G03F7/70575
摘要： A beam generator for an aerial image generating apparatus includes a laser source for emitting a laser beam and a short wavelength beam source for generating a short wavelength beam by processing the laser beam such that the short wavelength beam is coherent with and has a wavelength shorter than that of the laser beam. A spectral unit includes a quartz plate and a spectral layer coated on a surface of the quartz plate. The spectral layer has a Brewster's angle greater than 70° with respect to the laser beam such that the short wavelength beam is reflected from the spectral unit without the laser beam, increasing the reflectivity of the shortwave beam while decreasing the reflectivity and absorptivity of the laser beam in the spectral unit.
摘要翻译：用于空间图像生成装置的光束发生器包括用于发射激光束的激光源和用于通过处理激光束来产生短波长光束的短波长光束源，使得短波长光束相干并具有比波长短的波长激光束的。光谱单元包括石英板和涂覆在石英板的表面上的光谱层。光谱层相对于激光束具有大于70°的布鲁斯特角，使得短波长光束不受激光束从光谱单元反射，增加了短波束的反射率，同时降低了激光的反射率和吸收率光束在光谱单位。

4. 发明申请

US20130028273A1 BEAM GENERATOR 有权
标题翻译：光束发生器
公开(公告)号：US20130028273A1
公开(公告)日：2013-01-31
申请号：US13545733
申请日：2012-07-10
申请人： Dong-Gun Lee , Seong-Sue Kim , Hwan-Seok Seo
发明人： Dong-Gun Lee , Seong-Sue Kim , Hwan-Seok Seo
IPC分类号： H01S3/30 , H01S3/02
CPC分类号： G03F7/70025 , G03F1/84 , G03F7/70575
摘要： A beam generator for an aerial image generating apparatus includes a laser source for emitting a laser beam and a short wavelength beam source for generating a short wavelength beam by processing the laser beam such that the short wavelength beam is coherent with and has a wavelength shorter than that of the laser beam. A spectral unit includes a quartz plate and a spectral layer coated on a surface of the quartz plate. The spectral layer has a Brewster's angle greater than 70° with respect to the laser beam such that the short wavelength beam is reflected from the spectral unit without the laser beam, increasing the reflectivity of the shortwave beam while decreasing the reflectivity and absorptivity of the laser beam in the spectral unit.
摘要翻译：用于空间图像生成装置的光束发生器包括用于发射激光束的激光源和用于通过处理激光束来产生短波长光束的短波长光束源，使得短波长光束相干并具有比波长短的波长激光束的。光谱单元包括石英板和涂覆在石英板的表面上的光谱层。光谱层相对于激光束具有大于70°的布鲁斯特角，使得短波长光束不受激光束从光谱单元反射，增加了短波束的反射率，同时降低了激光的反射率和吸收率光束在光谱单位。

5. 发明授权

US08119309B2 Reflective photomask and method of fabricating, reflective illumination system and method of process using the same 失效
标题翻译：反光光掩模及其制造方法，反光照明系统及其使用方法
公开(公告)号：US08119309B2
公开(公告)日：2012-02-21
申请号：US12656668
申请日：2010-02-12
申请人： Dong-Gun Lee , Seong-Sue Kim , Hwan-Seok Seo , In-Sung Kim
发明人： Dong-Gun Lee , Seong-Sue Kim , Hwan-Seok Seo , In-Sung Kim
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/26
摘要： A reflective photomask includes a phase shift object on a substrate, a reflective layer stacked on the substrate and the phase shift object, a capping layer on the reflective layer, the capping layer including at least one surface portion having a bent shape, and a light absorption pattern on the capping layer, the light absorption pattern including at least one slit exposing the surface portion of the capping layer having the bent shape.
摘要翻译：反射光掩模包括在基板上的相移物体，层叠在基板上的反射层和相移物体，反射层上的覆盖层，封盖层包括至少一个具有弯曲形状的表面部分，以及光吸收图案包括使具有弯曲形状的覆盖层的表面部分露出的至少一个狭缝。

6. 发明申请

US20110275013A1 Reflective Extreme Ultraviolet Mask 有权
标题翻译：反光极紫外线面膜
公开(公告)号：US20110275013A1
公开(公告)日：2011-11-10
申请号：US13069758
申请日：2011-03-23
申请人： Dong-Gun Lee , Seong-Sue Kim , Tae-Geun Kim
发明人： Dong-Gun Lee , Seong-Sue Kim , Tae-Geun Kim
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00
摘要： According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure.
摘要翻译：根据示例实施例，反射型EUV掩模可以包括掩模基板，图案化结构和掩模基板上的非图案化结构。图案化结构和非图案化结构中的至少一个可以包括被配置为减少相应的图案化和非图案化结构的反射率的热处理区域。

7. 发明授权

US09239516B2 Method of manufacturing reflective extreme ultraviolet mask 有权
标题翻译：制造反射性极紫外线掩膜的方法
公开(公告)号：US09239516B2
公开(公告)日：2016-01-19
申请号：US14630825
申请日：2015-02-25
申请人： Tae-Geun Kim , Dong-Wan Kim , Dong-Gun Lee , Seong-Sue Kim
发明人： Tae-Geun Kim , Dong-Wan Kim , Dong-Gun Lee , Seong-Sue Kim
IPC分类号： G03F1/24 , G03F1/38 , G03F1/80
CPC分类号： G03F1/24 , G03F1/38 , G03F1/80
摘要： A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.
摘要翻译：反射性极紫外线掩模包括具有曝光区域和周边区域的掩模基板，所述掩模基板在所述周边区域中包括光散射部分，所述掩模基板的上表面上的反射层，所述反射层具有第一打开曝光光散射部分和在反射层上的吸收层图案，吸收层图案具有与第一开口光连通的第二开口。

8. 发明授权

US08968969B2 Reflective extreme ultraviolet mask and method of manufacturing the same 有权
标题翻译：反射极紫外线掩膜及其制造方法
公开(公告)号：US08968969B2
公开(公告)日：2015-03-03
申请号：US13302143
申请日：2011-11-22
申请人： Tae-Geun Kim , Dong-Wan Kim , Dong-Gun Lee , Seong-Sue Kim
发明人： Tae-Geun Kim , Dong-Wan Kim , Dong-Gun Lee , Seong-Sue Kim
IPC分类号： G03F1/24 , G03F1/38
CPC分类号： G03F1/24 , G03F1/38 , G03F1/80
摘要： A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.
摘要翻译：反射性极紫外线掩模包括具有曝光区域和周边区域的掩模基板，所述掩模基板在所述周边区域中包括光散射部分，所述掩模基板的上表面上的反射层，所述反射层具有第一打开曝光光散射部分和在反射层上的吸收层图案，吸收层图案具有与第一开口光连通的第二开口。

9. 发明申请

US20120135339A1 REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：反射极限超紫外线掩模及其制造方法
公开(公告)号：US20120135339A1
公开(公告)日：2012-05-31
申请号：US13302143
申请日：2011-11-22
申请人： Tae-Geun KIM , Dong-Wan Kim , Dong-Gun Lee , Seong-Sue Kim
发明人： Tae-Geun KIM , Dong-Wan Kim , Dong-Gun Lee , Seong-Sue Kim
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , G03F1/38 , G03F1/80
摘要： A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in fluid communication with the first opening.
摘要翻译：反射性极紫外线掩模包括具有曝光区域和周边区域的掩模基板，所述掩模基板在所述周边区域中包括光散射部分，所述掩模基板的上表面上的反射层，所述反射层具有第一打开曝光所述光散射部分，以及在所述反射层上具有吸收层图案，所述吸收层图案具有与所述第一开口流体连通的第二开口。

10. 发明授权

US08138483B2 Method of measuring phase of phase shift mask 有权
标题翻译：测量相移掩模相位的方法
公开(公告)号：US08138483B2
公开(公告)日：2012-03-20
申请号：US12489600
申请日：2009-06-23
申请人： Dong-Gun Lee , Seong-Sue Kim
发明人： Dong-Gun Lee , Seong-Sue Kim
IPC分类号： G01J1/42
CPC分类号： G01J9/02 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84
摘要： In a method of measuring a phase of a phase shift mask, initial extreme ultraviolet (EUV) light is divided into secondary EUV light portions. The secondary EUV light portions are irradiated onto the phase shift mask as incident EUV light portions, and the phase of the phase shift mask is measured from reflected incident EUV light portions.
摘要翻译：在测量相移掩模的相位的方法中，初始极紫外（EUV）光被分成次级EUV光部分。次级EUV光部分作为入射EUV光部分照射到相移掩模上，并且从反射入射的EUV光部分测量相移掩模的相位。

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