专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06403848B1 Preparation of hexafluoropropylene from the pyrolysis of trifluoromethane and tetrafluoroethylene 失效
标题翻译：从三氟甲烷和四氟乙烯的热解制备六氟丙烯
公开(公告)号：US06403848B1
公开(公告)日：2002-06-11
申请号：US09820631
申请日：2001-03-30
申请人： Dong Ju Moon , Hong Gon Kim , Byoung Sung Ahn , Moon Jo Chung , Young Soo Kwon
发明人： Dong Ju Moon , Hong Gon Kim , Byoung Sung Ahn , Moon Jo Chung , Young Soo Kwon
IPC分类号： C07C1702
CPC分类号： C07C17/269 , C07C21/18
摘要： The present invention relates to a process for preparing hexafluoropropylene(CF3CF═CF2, HFP) from the pyrolysis of trifluoromethane(CHF3, R23) and tetrafluoroethylene(C2F4, TFE) and more particularly, to the process for preparing hexafluoropropylene from the pyrolysis of an admixture of R23 and TFE mixed in an appropriate molar ratio at below 900 which is lower than the conventional reaction temperature and longer residence time, after investigating the pyrolysis reaction of R23 and TFE by the computer simulation. The process for preparing HFP is performed by carefully controlling reaction temperature with heat balance resulted from an endothermic pyrolysis of R23 and an exothermic dimerization of TFE to prevent from carbon formation, recycling unreacted R23 and TFE in the product separated and purified from distillation column, adding fresh R23 additionally to keep an appropriate molar ratio of R23 and TFE, to improve a total yield of HFP and to minimize heat supply from outside.
摘要翻译：本发明涉及从三氟甲烷（CHF 3，R 23）和四氟乙烯（C 2 F 4，TFE）的热解制备六氟丙烯（CF 3 CF = CF 2，HFP）的方法，更具体地说，涉及从混合物的热解制备六氟丙烯的方法通过计算机模拟研究R23和TFE的热解反应后，R23和TFE以适合的摩尔比混合在900以下，低于常规反应温度和较长的停留时间。制备HFP的过程是通过仔细控制反应温度和由R23的吸热热解产生的热平衡和TFE的放热二聚反应来防止形成碳，循环未反应的R23和TFE，从蒸馏塔中分离和纯化，加入新鲜的R23另外保持适当的R23和TFE的摩尔比，以提高HFP的总产率并最小化从外部的供热。

2. 发明授权

US06710215B2 Method of a simultaneous preparation of hexafluoropropylene and octafluorocyclobutane 失效
标题翻译：同时制备六氟丙烯和八氟环丁烷的方法
公开(公告)号：US06710215B2
公开(公告)日：2004-03-23
申请号：US10218362
申请日：2002-08-14
申请人： Dong Ju Moon , Moon Jo Chung , Young Soo Kwon , Byoung Sung Ahn
发明人： Dong Ju Moon , Moon Jo Chung , Young Soo Kwon , Byoung Sung Ahn
IPC分类号： C07C1700
CPC分类号： C07C23/06 , C07C17/269 , C07C17/281 , C07C21/185
摘要： A method of simultaneous and selective prepararation of hexafluoropropylene and octafluorocyclebutane comprising the steps of: (a) thermally decomposing difluorochloromethane to obtain tetrafluoroethylene and then supplying the resulting tetrafluoroethylene into a fluidized bed reactor equipped with a distributor for supplying steam; and (b) supplying steam into a flow of tetrafluoroethylene supplied into the fluidized bed reactor, through a distributor for supplying steam at a certain molar ratio of tetrafluoroethylene/stream, and then performing dimerization of tetrafluoroethylene in the fluidized bed reactor under an atmospheric pressure.
摘要翻译：一种同时和选择性制备六氟丙烯和八氟环丁烷的方法，包括以下步骤：（a）热分解二氟氯甲烷以获得四氟乙烯，然后将所得的四氟乙烯供给到装有用于供应蒸汽的分配器的流化床反应器中; 和（b）通过用于以一定摩尔比的四氟乙烯/料流供给蒸汽的分配器供应蒸汽供入到流化床反应器中的四氟乙烯流中，然后在大气压下在流化床反应器中进行四氟乙烯的二聚。

3. 发明授权

US5841007A Process for manufacturing 1,1,1,2-tetrafluoroethane 失效
标题翻译：制备1,1,1,2-四氟乙烷的方法
公开(公告)号：US5841007A
公开(公告)日：1998-11-24
申请号：US630678
申请日：1996-04-12
申请人： Byoung Sung Ahn , Young Soo Kwon , Kun You Park , Moon Jo Chung
发明人： Byoung Sung Ahn , Young Soo Kwon , Kun You Park , Moon Jo Chung
IPC分类号： C07C17/20 , C07C17/21 , C07C19/08 , C07C17/00
CPC分类号： C07C19/08 , C07C17/206 , C07C17/21
摘要： The present invention relates to a process for manufacturing 1,1,1,2-tetrafluoroethane (HFC-134a) from trichloroethylene (TCE) and hydrogen fluoride (HF) by reacting the HCFC-133a with the HF to produce the HFC-134a and reacting the TCE with the HF to produce 1-choro-2,2,2-trifluoroethane (HCFC-133a), characterized by that a part of said HF is mixed with the mixture containing the HFC-134a and the remaining portion of said HF is fed with said TCE in portions to at least two sections of a reactor for producing said HCFC-133a. According the present process, the temperature change in the reactor for producing HCFC-133a is maintained within a narrow range over the whole reaction procedures, and the catalytic activity is well maintained. Further, the formation of by-products is considerably prevented and thus the productivity is remarkably enhanced.
摘要翻译：本发明涉及通过使HCFC-133a与HF反应生成HFC-134a，从三氯乙烯（TCE）和氟化氢（HF）制备1,1,1,2-四氟乙烷（HFC-134a）使TCE与HF反应以产生1-氯-2,2,2-三氟乙烷（HCFC-133a），其特征在于，将所述HF的一部分与含有HFC-134a和所述HF的剩余部分的混合物混合与所述TCE一起供给至用于生产所述HCFC-133a的反应器的至少两个部分。根据本方法，生产HCFC-133a的反应器中的温度变化在整个反应过程中保持在窄范围内，并且催化活性得到很好的维持。此外，可以显着地防止副产物的形成，从而显着提高生产率。

4. 发明授权

US6075167A Method for preparing cycloaliphatic diamines from aromatic diamines 有权
标题翻译：从芳族二胺制备脂环族二胺的方法
公开(公告)号：US6075167A
公开(公告)日：2000-06-13
申请号：US160821
申请日：1998-09-25
申请人： Hoon Sik Kim , Kun Yu Park , Young Soo Kwon , Moon Jo Chung , Byung Gwon Lee
发明人： Hoon Sik Kim , Kun Yu Park , Young Soo Kwon , Moon Jo Chung , Byung Gwon Lee
IPC分类号： C07C211/18 , C07C209/72 , C07C211/36 , C07C209/00
CPC分类号： C07C209/72
摘要： This invention relates to a method for preparing cycloaliphatic diamines by hydrogenating aromatic diamines in the presence of a supported ruthenium catalyst and a metal nitrite as a catalyst promoter to increase the rate of the hydrogenation reaction and decrease the amount of higher boiler by-products.
摘要翻译：本发明涉及一种通过在负载型钌催化剂和亚硝酸金属作为催化剂促进剂的存在下将芳族二胺加氢来制备脂环族二胺的方法，以提高氢化反应速率并减少较高的锅炉副产物的量。

5. 发明授权

US5959166A Method for concurrently producing different hydrofluoro carbons 失效
标题翻译：同时生产不同氢氟碳的方法
公开(公告)号：US5959166A
公开(公告)日：1999-09-28
申请号：US966093
申请日：1997-11-07
申请人： Hoon Sik Kim , Moon Jo Chung , Kun You Park , Young Soo Kwon
发明人： Hoon Sik Kim , Moon Jo Chung , Kun You Park , Young Soo Kwon
IPC分类号： B01J23/26 , B01J27/125 , B01J27/132 , B01J27/138 , C07B61/00 , C07C17/20 , C07C17/21 , C07C19/08 , C07C19/10 , C07C17/08
CPC分类号： C07C17/206 , C07C17/21 , Y02P20/582
摘要： A method for concurrently producing different hydrofluoro carbons, comprising the reaction of halocarbon or hydrohalocarbon with hydrogen fluoride in a reaction system consisting of a series of at least two discrete reactors, in the presence of catalysts, said reactors each being provided with different reactant materials and differing in reaction conditions including the catalysts and/or reaction temperature, thereby flexibly controlling their production rates in accordance with fluctuations in their demand, and eliminating the risk of constructing large scale plants responsible for individual hydrofluorocarbons.
摘要翻译：一种同时生产不同氢氟碳的方法，包括在由一系列至少两个不连续的反应器组成的反应体系中，在催化剂存在下，卤代烃或氢卤化碳与氟化氢的反应，所述反应器各自具有不同的反应物料和包括催化剂和/或反应温度在内的反应条件不同，从而根据其需求的波动灵活地控制其生产率，并消除构建负责单个氢氟碳化物的大型设备的风险。

6. 发明申请

US20110034036A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110034036A1
公开(公告)日：2011-02-10
申请号：US12845481
申请日：2010-07-28
申请人： Young Soo Kwon
发明人： Young Soo Kwon
IPC分类号： H01L21/02
CPC分类号： H01L21/02068 , H01L21/0217 , H01L21/02274 , H01L21/02301 , H01L21/3185 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76849 , H01L21/76867
摘要： Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.
摘要翻译：提供一种制造半导体器件的方法。在该方法中，在形成有下部布线的基板上形成薄衬垫之后，通过硅源和下部布线之间的反应，提供硅源以在衬垫下方形成硅化物层，并且硅化物层被氮化并形成蚀刻停止层。因此，防止下部互连与硅源接触，可以防止下部布线的表面电阻的变化，从而可以制造高速器件。

7. 发明授权

US5723702A Method for removing moisture from chlorodifluoro-methane 失效
标题翻译：从一氯二氟甲烷中除去水分的方法
公开(公告)号：US5723702A
公开(公告)日：1998-03-03
申请号：US615092
申请日：1996-03-13
申请人： Young Soo Kwon , Kun You Park , Sang-Deuk Lee , Honggon Kim
发明人： Young Soo Kwon , Kun You Park , Sang-Deuk Lee , Honggon Kim
IPC分类号： C07C17/38
CPC分类号： C07C17/38
摘要： There is a process for removing moisture from chlorodifluoromethane (CHClF.sub.2) containing moisture in excess in the preparation of chlorodifluoromethane comprising lowering the partial pressure of water in the chlorodifluoromethane gas by contacting the chlorodifluoromethane gas with an aqueous solution of calcium chloride of more than 5% by weight.
摘要翻译：在一氯二氟甲烷的制备中，有一个从含有二氧化碳的氯代二氟甲烷（CHClF 2）中除去水分的方法，包括通过使氯二氟甲烷气体与氯代二氟甲烷气体的氯化钙水溶液接触超过5％的氯化钙水溶液来降低氯二氟甲烷气体的分压重量。

8. 发明授权

US08367549B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08367549B2
公开(公告)日：2013-02-05
申请号：US12845481
申请日：2010-07-28
申请人： Young Soo Kwon
发明人： Young Soo Kwon
IPC分类号： H01L21/44
CPC分类号： H01L21/02068 , H01L21/0217 , H01L21/02274 , H01L21/02301 , H01L21/3185 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76849 , H01L21/76867
摘要： Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.
摘要翻译：提供一种制造半导体器件的方法。在该方法中，在形成有下部布线的基板上形成薄衬垫之后，通过硅源和下部布线之间的反应，提供硅源以在衬垫下方形成硅化物层，并且硅化物层被氮化并形成蚀刻停止层。因此，防止下部互连与硅源接触，可以防止下部布线的表面电阻的变化，从而可以制造高速器件。

9. 发明授权

US07910491B2 Gapfill improvement with low etch rate dielectric liners 有权
标题翻译：利用低蚀刻速率的电介质衬垫进行改进
公开(公告)号：US07910491B2
公开(公告)日：2011-03-22
申请号：US12437256
申请日：2009-05-07
申请人： Young Soo Kwon , Bi Jang , Anchuan Wang , Young S. Lee , Mihaela Balseanu , Li-Qun Xia , Jin Ho Jeon
发明人： Young Soo Kwon , Bi Jang , Anchuan Wang , Young S. Lee , Mihaela Balseanu , Li-Qun Xia , Jin Ho Jeon
IPC分类号： H01L21/302
CPC分类号： H01L21/76224 , H01L21/02112 , H01L21/02247 , H01L21/02304 , H01L21/318
摘要： A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.
摘要翻译：描述了填充沟槽的方法，并且包括在含氟蚀刻化学中沉积具有高比率的氧化硅与介电衬里蚀刻速率的介电衬垫。氧化硅沉积在沟槽内并蚀刻以重新打开或加宽沟槽顶部附近的间隙。电介质衬垫在蚀刻工艺期间保护下面的衬底，从而可以使间隙更宽。氧化硅再次沉积在沟槽内以基本上填充沟槽。

10. 发明授权

US06399536B2 High performance catalyst systems for the synthesis of alkylenecarbonates 失效
标题翻译：用于合成亚烷基碳酸酯的高性能催化剂体系
公开(公告)号：US06399536B2
公开(公告)日：2002-06-04
申请号：US09780236
申请日：2001-02-09
申请人： Hoon Sik Kim , Byung Gwon Lee , Sang Deuk Lee , Young Soo Kwon , Hyun Joo Lee
发明人： Hoon Sik Kim , Byung Gwon Lee , Sang Deuk Lee , Young Soo Kwon , Hyun Joo Lee
IPC分类号： B01J3130
CPC分类号： C07D317/36 , B01J23/06 , B01J23/08 , B01J23/14 , B01J23/34 , B01J23/745 , B01J31/1658 , B01J31/181 , B01J2531/26 , B01J2531/33 , B01J2531/72 , B01J2531/842
摘要： A catalyst of the formula (1) for the synthesis of alkylene carbonate by reacting alkylene oxide and carbon dioxide LmMXn (1) wherein L is selected from a group of pyridines; M is a metal atom selected from Zn, Fe, Mn, Pb and In; X is a halogen atom selected from Cl, Br and I; m is 1 or 2, and n is 2 or 3.
摘要翻译：用于通过使环氧烷和二氧化碳反应合成碳酸亚烷基酯的式（1）的催化剂，其中L选自一组吡啶; M是选自Zn，Fe，Mn，Pb和In的金属原子; X是选自Cl，Br和I的卤素原子; m为1或2，n为2或3。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式