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    • 7. 发明申请
    • Context knowledge modeling method for sharing and reusing context knowledge in context-aware system
    • 上下文知识建模方法,用于在上下文感知系统中共享和重用上下文知识
    • US20070038438A1
    • 2007-02-15
    • US11438855
    • 2006-05-23
    • Joon ChoHyun KimHyoung KimJoo LeeChung HongJin Jung
    • Joon ChoHyun KimHyoung KimJoo LeeChung HongJin Jung
    • G06F17/27
    • G06F16/367
    • A context knowledge modeling method is provided. The context knowledge modeling method includes the steps of: a) defining a context knowledge space as a two-dimensional space based on an abstract level and an application domain of knowledge; b) locating a share ontology as a highest level of the abstract level for defining a common ontology concept at a plurality of applications and services performed in various environment and domains; c) locating at least one of domain ontologies as a lower abstract level than the share ontology by taking over the ontology concept defined at the share ontology and defining a class and an attribute specialized at a corresponding domain and a developing application; and d) locating one or more instance bases expressing knowledge about real objects to have a lower abstract level than the domain ontologies.
    • 提供了上下文知识建模方法。 上下文知识建模方法包括以下步骤:a)基于知识的抽象层次和应用领域,将上下文知识空间定义为二维空间; b)将共享本体定位为在各种环境和域中执行的多个应用和服务中定义共同本体概念的抽象级别的最高级别; c)通过接管共享本体定义的本体概念并定义专门在相应域和开发应用的类和属性,将至少一个域本体定位为比共享本体更低的抽象级别; 以及d)找到一个或多个表示关于真实对象的知识的实例基础具有比领域本体更低的抽象级别。
    • 10. 发明申请
    • Non-volatile memory device and drive method thereof
    • 非易失性存储器件及其驱动方法
    • US20050141272A1
    • 2005-06-30
    • US11024468
    • 2004-12-30
    • Jin Jung
    • Jin Jung
    • G11C11/41G11C11/34G11C14/00G11C16/04
    • G11C14/0063G11C14/00G11C16/0466
    • A non-volatile memory device and drive method thereof uses a voltage bias condition to enable an electronic device to normally operate without employing a specific transistor, e.g., a recall transistor. The non-volatile memory device performs its function normally without the recall transistor, and by which a degree of cell integration can be considerably raised. A SRAM latch is controlled by the logic circuit, a SONOS (silicon-oxide-nitride-oxide-nitride) transistor is electrically connected to a Vcc node of the electronic device to store a high/low state of the SRAM latch according to a turn-on or turn-off state of power, and a pass transistor controls read, program, and erase operations of the SONOS transistor.
    • 非易失性存储器件及其驱动方法使用电压偏置条件使得电子器件能够正常工作,而不使用特定的晶体管,例如调用晶体管。 非易失性存储器件在没有调用晶体管的情况下正常地执行其功能,并且可以显着提高单元集成程度。 SRAM锁存器由逻辑电路控制,SONOS(氧化硅 - 氮化物 - 氧化物 - 氮化物)晶体管电连接到电子设备的Vcc节点,以根据转向存储SRAM锁存器的高/低状态 - 或关断电源状态,并且通过晶体管控制SONOS晶体管的读取,编程和擦除操作。