专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080089442A1 METHOD OF PERFORMING PHASE SHIFT-BASED PRECODING AND AN APPARATUS FOR SUPPORTING THE SAME IN A WIRELESS COMMUNICATION SYSTEM 有权
标题翻译：在无线通信系统中执行基于相位移位的预测方法和支持相机的装置
公开(公告)号：US20080089442A1
公开(公告)日：2008-04-17
申请号：US11858049
申请日：2007-09-19
申请人： Moon Lee , Bin Ihm , Jin-Young Chun , Hyun Ko , Wook Lee , Jin Jung
发明人： Moon Lee , Bin Ihm , Jin-Young Chun , Hyun Ko , Wook Lee , Jin Jung
IPC分类号： H04L27/00
CPC分类号： H04B7/0682 , H04B7/0417 , H04B7/0639 , H04L1/0003 , H04L1/0009 , H04L1/0025 , H04L5/0023 , H04L25/03343 , H04L2025/03802
摘要： A method of transmitting data using a phase shift-based precoding in a multiple antenna system using a plurality of subcarriers is disclosed. More specifically, the method includes determining a diagonal matrix to provide different phase angles to each of the plurality of antennas as a part of a phase shift-based precoding matrix, selecting a unitary matrix from a first codebook as the part of a phase shift-based precoding matrix, and performing precoding to symbols associated with subcarriers based on the diagonal matrix and the unitary matrix.
摘要翻译：公开了使用多个子载波在多天线系统中使用基于相移的预编码来发送数据的方法。更具体地，该方法包括：确定对角矩阵，以作为基于相移的预编码矩阵的一部分来提供与多个天线中的每一个相对应的不同相位角，从第一码本中选择酉矩阵作为相移 - 并且基于对角矩阵和酉矩阵对与子载波相关联的符号执行预编码。

2. 发明申请

US20070248113A1 METHOD FOR ALLOCATING REFERENCE SIGNALS IN MIMO SYSTEM 有权
标题翻译： MIMO系统中分配参考信号的方法
公开(公告)号：US20070248113A1
公开(公告)日：2007-10-25
申请号：US11734710
申请日：2007-04-12
申请人： Hyun Soo Ko , Bin Ihm , Jin Chun , Wook Lee , Jae Chung , Jae Chang , Jin Jung , Moon Lee
发明人： Hyun Soo Ko , Bin Ihm , Jin Chun , Wook Lee , Jae Chung , Jae Chang , Jin Jung , Moon Lee
IPC分类号： H04J4/00 , H04J11/00
CPC分类号： H04B7/0613 , H04B7/0413 , H04B7/0684 , H04L5/0023 , H04L5/0048 , H04L25/0224 , H04L25/0226
摘要： There is provided a method for placing reference signals in a wireless communication system. The method includes preparing a plurality of sub-frames for a plurality of antennas, placing a reference signal for one sub-frame and placing a reference signal for another sub-frame not to overlap with the reference signal for one sub-frame, wherein the reference signal for one sub-frame and the reference signal for another sub-frame are successively placed on contiguous OFDM symbols or on the contiguous sub-carriers. Channel estimation or data demodulation can be prevented from performance degradation.
摘要翻译：提供了一种在无线通信系统中放置参考信号的方法。该方法包括：为多个天线准备多个子帧，为一个子帧放置一个参考信号，并为另一个子帧放置一个不与一个子帧的参考信号重叠的参考信号，其中，一个子帧的参考信号和另一个子帧的参考信号被连续放置在连续的OFDM符号上或连续的子载波上。信道估计或数据解调可以防止性能下降。

3. 发明申请

US20070280373A1 PHASE SHIFT BASED PRECODING METHOD AND TRANSCEIVER FOR SUPPORTING THE SAME 有权
标题翻译：基于相位移位的预测方法和收发器支持它
公开(公告)号：US20070280373A1
公开(公告)日：2007-12-06
申请号：US11754882
申请日：2007-05-29
申请人： Moon Lee , Jae Chang , Bin Ihm , Jin Jung , Jin Chun
发明人： Moon Lee , Jae Chang , Bin Ihm , Jin Jung , Jin Chun
IPC分类号： H04L1/02
CPC分类号： H04L1/02 , H04B5/0081 , H04B7/0456 , H04B7/0465 , H04B7/0639 , H04B7/0671 , H04B7/0682 , H04L25/03343 , H04L25/03898 , H04L27/2626
摘要： A method of transmitting data using a generalized phase shift based proceding or an extended phase shift precoding scheme in a multiple-antenna system using a plurality of subcarrier and a transceiver for supporting the same are disclosed. A phase shift based precoding matrix may be generalized and determined by a product of a diagonal matrix for phase shift and a unitary matrix for maintaining orthogonality in spatial domain. The diagonal matrix may be extended by a product of a proceding matrix for increasing channel power and the diagonal matrix for phase shift. The design of the transceiver can be simplified or communication efficiency can be improved by generalizing and extending the phase shift based proceding.
摘要翻译：公开了一种在多天线系统中使用基于广义相移的过程或扩展相移预编码方案来发送数据的方法，所述多天线系统使用多个子载波和收发器来支持该方法。基于相移的预编码矩阵可以被推广并由用于相移的对角矩阵和用于维持空间域中的正交性的酉矩阵的乘积来确定。可以通过用于增加信道功率的过程矩阵的乘积和用于相移的对角矩阵来扩展对角矩阵。可以简化收发器的设计，通过泛化和扩展基于相移的过程可以提高通信效率。

4. 发明申请

US20070254436A1 Flash memory and methods of fabricating the same 有权
标题翻译：闪存及其制造方法
公开(公告)号：US20070254436A1
公开(公告)日：2007-11-01
申请号：US11823321
申请日：2007-06-26
申请人： Jin Jung
发明人： Jin Jung
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524 , H01L29/42328 , H01L29/42336
摘要： Flash memory and methods of fabricating the same are disclosed. An illustrated example flash memory includes a first source formed within a semiconductor substrate; an epitaxial layer formed on an upper surface of the semiconductor substrate; an opening formed within the epitaxial layer to expose the first source; a floating gate device formed inside the opening; and a select gate device formed on the epitaxial layer at a distance from the floating gate device.
摘要翻译：公开了闪存及其制造方法。所示示例性闪存包括形成在半导体衬底内的第一源; 形成在所述半导体衬底的上表面上的外延层; 形成在所述外延层内以露出所述第一源的开口; 形成在开口内的浮栅装置; 以及在距离浮动栅极器件一定距离的外延层上形成的选择栅极器件。

5. 发明申请

US20070038438A1 Context knowledge modeling method for sharing and reusing context knowledge in context-aware system 审中-公开
标题翻译：上下文知识建模方法，用于在上下文感知系统中共享和重用上下文知识
公开(公告)号：US20070038438A1
公开(公告)日：2007-02-15
申请号：US11438855
申请日：2006-05-23
申请人： Joon Cho , Hyun Kim , Hyoung Kim , Joo Lee , Chung Hong , Jin Jung
发明人： Joon Cho , Hyun Kim , Hyoung Kim , Joo Lee , Chung Hong , Jin Jung
IPC分类号： G06F17/27
CPC分类号： G06F16/367
摘要： A context knowledge modeling method is provided. The context knowledge modeling method includes the steps of: a) defining a context knowledge space as a two-dimensional space based on an abstract level and an application domain of knowledge; b) locating a share ontology as a highest level of the abstract level for defining a common ontology concept at a plurality of applications and services performed in various environment and domains; c) locating at least one of domain ontologies as a lower abstract level than the share ontology by taking over the ontology concept defined at the share ontology and defining a class and an attribute specialized at a corresponding domain and a developing application; and d) locating one or more instance bases expressing knowledge about real objects to have a lower abstract level than the domain ontologies.
摘要翻译：提供了上下文知识建模方法。上下文知识建模方法包括以下步骤：a）基于知识的抽象层次和应用领域，将上下文知识空间定义为二维空间; b）将共享本体定位为在各种环境和域中执行的多个应用和服务中定义共同本体概念的抽象级别的最高级别; c）通过接管共享本体定义的本体概念并定义专门在相应域和开发应用的类和属性，将至少一个域本体定位为比共享本体更低的抽象级别; 以及d）找到一个或多个表示关于真实对象的知识的实例基础具有比领域本体更低的抽象级别。

6. 发明申请

US20060156708A1 Metal fiber yarn, fabric comprising metal fiber yarn, method for manufacturing fabric, and use of fabric 审中-公开
标题翻译：金属纤维纱，包含金属纤维纱的织物，织物的制造方法和织物的使用
公开(公告)号：US20060156708A1
公开(公告)日：2006-07-20
申请号：US11333572
申请日：2006-01-17
申请人： Jin Hyun , Jin Jung , Man Park , Jun Won , Duck Lee
发明人： Jin Hyun , Jin Jung , Man Park , Jun Won , Duck Lee
IPC分类号： D07B1/06
CPC分类号： B23P17/06 , D02G3/12
摘要： Disclosed is a metal fiber yarn, which is used to produce a membrane for a surface combustion burner having a wide combustion range and high porosity, a fabric produced using the metal fiber yarn, a method for manufacturing the fabric, and the membrane for the surface combustion burner using the fabric. Having a length of 0.45-0.6 m/g and a torsion ratio of 1-9 turns/m, the metal fiber yarn comprises 50-100 unidirectionally oriented metal fibers, which are produced by combing randomly oriented metal fibers manufactured by a melt extraction method. The membrane has uniform combustion efficiency, a wide combustion range, and high porosity.
摘要翻译：公开了一种金属纤维丝，其用于制造具有宽燃烧范围和高孔隙率的表面燃烧器的膜，使用金属纤维纱制造的织物，制造织物的方法和用于表面的膜燃烧器使用织物。长度为0.45-0.6m / g，扭转比为1-9匝/ m，金属纤维纱包含50-100个单向取向的金属纤维，它们是通过熔融提取法制造的无规取向的金属纤维。膜具有均匀的燃烧效率，较宽的燃烧范围和高孔隙率。

7. 发明申请

US20050285184A1 Flash memory device and method for programming/erasing the same 审中-公开
标题翻译：闪存器件及其编程/擦除方法
公开(公告)号：US20050285184A1
公开(公告)日：2005-12-29
申请号：US11148982
申请日：2005-06-09
申请人： Jin Jung
发明人： Jin Jung
IPC分类号： H01L27/115 , H01L29/792
CPC分类号： H01L29/513 , H01L29/792
摘要： A flash memory device and a method for programming/erasing a flash memory device are disclosed. An example flash memory device includes a semiconductor substrate, an oxide-nitride-oxide (ONO) layer formed on the semiconductor substrate, a blocking insulating layer having a high dielectric constant and being formed on the ONO layer, first conductive poly-gate formed on the blocking insulating layer, and a source/drain area defined by implanting first conductive impurities into the semiconductor substrate positioned at both sides of the first conductive poly-gate.
摘要翻译：公开了闪速存储器件和用于编程/擦除闪速存储器件的方法。示例性闪存器件包括半导体衬底，形成在半导体衬底上的氧化物 - 氧化物 - 氧化物（ONO）层，具有高介电常数的阻挡绝缘层并形成在ONO层上，第一导电多晶硅形成在所述阻挡绝缘层以及通过将第一导电杂质注入位于所述第一导电多晶硅栅极两侧的所述半导体衬底中而限定的源极/漏极区域。

8. 发明申请

US20050141272A1 Non-volatile memory device and drive method thereof 有权
标题翻译：非易失性存储器件及其驱动方法
公开(公告)号：US20050141272A1
公开(公告)日：2005-06-30
申请号：US11024468
申请日：2004-12-30
申请人： Jin Jung
发明人： Jin Jung
IPC分类号： G11C11/41 , G11C11/34 , G11C14/00 , G11C16/04
CPC分类号： G11C14/0063 , G11C14/00 , G11C16/0466
摘要： A non-volatile memory device and drive method thereof uses a voltage bias condition to enable an electronic device to normally operate without employing a specific transistor, e.g., a recall transistor. The non-volatile memory device performs its function normally without the recall transistor, and by which a degree of cell integration can be considerably raised. A SRAM latch is controlled by the logic circuit, a SONOS (silicon-oxide-nitride-oxide-nitride) transistor is electrically connected to a Vcc node of the electronic device to store a high/low state of the SRAM latch according to a turn-on or turn-off state of power, and a pass transistor controls read, program, and erase operations of the SONOS transistor.
摘要翻译：非易失性存储器件及其驱动方法使用电压偏置条件使得电子器件能够正常工作，而不使用特定的晶体管，例如调用晶体管。非易失性存储器件在没有调用晶体管的情况下正常地执行其功能，并且可以显着提高单元集成程度。 SRAM锁存器由逻辑电路控制，SONOS（氧化硅 - 氮化物 - 氧化物 - 氮化物）晶体管电连接到电子设备的Vcc节点，以根据转向存储SRAM锁存器的高/低状态 - 或关断电源状态，并且通过晶体管控制SONOS晶体管的读取，编程和擦除操作。

9. 发明申请

US20050141266A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050141266A1
公开(公告)日：2005-06-30
申请号：US11022684
申请日：2004-12-28
申请人： Jin Jung
发明人： Jin Jung
IPC分类号： G11C14/00 , G11C11/00 , G11C16/04 , H01L21/8244 , H01L21/8247 , H01L27/105 , H01L27/11 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C14/00 , G11C14/0063 , G11C16/0425 , G11C16/0466
摘要： An nvSRAM having a stacked oxide layer is disclosed. A disclosed device comprises: two NMOS transistors and two PMOS transistors for an SRAM latch; two NMOS pass gates for reading and writing a HIGH condition and a LOW condition that are formed in the SRAM latch; and two floating gate NVM devices of split gate structure for storing the HIGH condition and the LOW condition that are stored in the SRAM latch when the power is off.
摘要翻译：公开了具有堆叠氧化物层的nvSRAM。所公开的器件包括：用于SRAM锁存器的两个NMOS晶体管和两个PMOS晶体管; 两个用于读取和写入在SRAM锁存器中形成的HIGH条件和LOW条件的NMOS通道门; 以及用于存储当电源关闭时存储在SRAM锁存器中的HIGH条件和LOW条件的分离门结构的两个浮动栅极NVM器件。

10. 发明申请

US20050074937A1 Method for fabricating flash memory device 有权
标题翻译：闪存器件制造方法
公开(公告)号：US20050074937A1
公开(公告)日：2005-04-07
申请号：US10747619
申请日：2003-12-30
申请人： Jin Jung
发明人： Jin Jung
IPC分类号： H01L27/115 , H01L21/28 , H01L21/336 , H01L29/423 , H01L29/51
CPC分类号： H01L21/28194 , H01L21/28273 , H01L29/42324 , H01L29/513 , H01L29/517
摘要： A method for fabricating a flash memory includes forming a tunnel oxide layer by depositing a material with a conduction band energy level lower than that of SiO2 on a semiconductor substrate; forming a floating gate by depositing polysilicon on the tunnel oxide layer; forming an intergate dielectric layer on the floating gate; forming a control gate on the intergate dielectric layer; forming a gate electrode by patterning the tunnel oxide layer, the floating gate, the intergate dielectric layer and the control gate; and forming a source/drain region by implanting impurities into the substrate using the gate electrode as a mask.
摘要翻译：一种闪速存储器的制造方法，包括通过在半导体衬底上沉积具有低于SiO 2的导带能级的材料形成隧道氧化层; 通过在隧道氧化物层上沉积多晶硅来形成浮栅; 在浮栅上形成隔间介电层; 在所述隔间介电层上形成控制栅极; 通过图案化隧道氧化物层，浮置栅极，栅间电介质层和控制栅极来形成栅电极; 以及通过使用栅极电极作为掩模将杂质注入到衬底中来形成源极/漏极区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式